Page 1
Small Signal Transistor Arrays
0.8
0.2
+0.1
–0.05
12˚
6˚
7.7±0.3
0.5
0 to 0.1
45˚
14-0.4±0.1
6.5±0.3
5.5±0.3
1.5±0.1
1
78
14
12˚
0.5±0.2
12-0.9±0.1
6˚
1
6
7
4
5
2
3
14
13
12
11
10
9
8
UN222
Transistor array to drive the small motor
Features
■
●
Small and lightweight
●
Low power consumption (low V
●
Low-voltage drive
●
Transistors with built-in resistor with 6 elements (SO–14)
Applications
■
●
Video cameras
●
Cameras
●
Portable CD players
●
Small motor drive circuits in general for electronic equipment.
Absolute Maximum Ratings (Ta=25±2˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation PT* 0.5 W
Junction temperature T
Storage temperature T
Note: ± marks used above: +: NPN part, –: PNP part
* TC = 25˚C only when the elements are active
CBO
V
CEO
C
j
stg
transistor used)
CE(sat)
±10 V
±10 V
±3A
150 ˚C
–55 to +150 ˚C
Unit: mm
SO–14 Package
Internal Connection
1
Page 2
Small Signal Transistor Arrays
Electrical Characteristics (Ta=25±2˚C)
■
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
Forward voltage (DC) V
Bias resistance R
*Pulse measurement
CBO
V
T
CBO
CEO
FE
CE(sat)
ob
F
EB
(NPN) VCB = 6V 1
(PNP) VCB = –6V –1
(NPN) IC = 10µA10
(PNP) IC = –10µA –10
(NPN) IC = 1mA 10
(PNP) IC = –1mA –10
(NPN) VCE = 1V, IC = 0.5A* 200 700
(PNP) VCE = –1V, IC = – 0.5A* 200 700
(NPN) IC = 2A, IB = 50mA* 0.25
(PNP) IC = –2A, IB = –50mA* – 0.45
(NPN) VCB = 6V, IE = –50mA, f = 200MHz
(PNP) VCB = –6V, IE = 50mA, f = 200MHz
150
150
(NPN) VCB = 6V, IE = 0, f = 1MHz 50
(PNP) VCB = –6V, IE = 0, f = 1MHz 70
(NPN) IF = 1A 1.5
(PNP) IF = –1A 1.5
–30% 10 +30% kΩ
UN222
µA
V
V
V
MHz
pF
V
Characteristics charts of PNP transistor block
— Ta IC — V
P
T
0.6
)
0.5
W
(
T
0.4
0.3
0.2
0.1
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
)
2
–6
–5
)
A
(
–4
C
–3
–2
Collector current I
–1
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
CE
Ta=25˚C
–8mA–10mAIB=–12mA
–6mA
–4mA
–2mA
V
— I
CE(sat)
–10
)
V
(
–3
CE(sat)
–1
–0.3
–0.1
–0.03
–0.01
–0.003
Collector to emitter saturation voltage V
–0.001
–0.01 –0.03
)
25˚C
–0.1 –0.3 –1 –3 –10
Collector current IC (A
C
IC/IB=40
Ta=75˚C
–25˚C
)
Page 3
Small Signal Transistor Arrays UN222
hFE — I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
Ta=75˚C
25˚C
–25˚C
VCE=1V
)
pF
(
240
200
ob
160
120
80
40
Collector output capacitance C
0
–0.01 –0.03
–0.1 –0.3 –1 –3 –10
Collector current IC (A
)
Characteristics charts of NPN transistor block
— Ta IC — V
P
T
0.6
)
0.5
W
(
T
0.4
0.3
0.2
0.1
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
)
)
A
(
C
Collector current I
Cob — V
0
–3 –10 –30 –100
–1
CB
Collector to base voltage VCB (V
CE
6
5
4
3
2
1
0
012210486
IB=12mA
Collector to emitter voltage VCE (V
f=1MHz
I
=0
E
Ta=25˚C
Ta=25˚C
10mA
8mA
6mA
4mA
2mA
)
V
— I
CE(sat)
10
)
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
0.003
Collector to emitter saturation voltage V
0.001
0.01 0.03
)
0.1 0.3 1 3 10
Collector current IC (A
Ta=75˚C
25˚C
C
IC/IB=40
–25˚C
)
hFE — I
C
600
FE
500
Ta=75˚C
400
300
200
100
Forward current transfer ratio h
0
0.01 0.03
25˚C
–25˚C
0.1 0.3 1 3 10
Collector current IC (A
VCE=1V
)
)
pF
(
Cob — V
240
200
ob
160
120
80
40
CB
Collector output capacitance C
0
3 10 30 100
1
Collector to base voltage VCB (V
f=1MHz
I
=0
E
Ta=25˚C
)
3
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