Datasheet UNA0206 Datasheet (Panasonic)

Small Signal Transistor Arrays

6°

12°

45°

0 to 0.1

0.5

7.7±0.3

0.5±0.2

1

56

10

6.5±0.3
10–0.4±0.1

1.5±0.1

0.8

12° 6°

8–0.9±0.1

5.5±0.3

0.2

+0.1

–0.05

1
2
3
4
5

10

9
8
7
6

UN206

Transistor array to drive the small motor

Features

■

●

Small and lightweight

●

Low power consumption (low V

●

Protective diode incorporated (C-E monolithic)

●

Low-voltage drive

Applications

■

●

Video cameras

●

Cameras

●

Portable CD players

●

Small motor drive circuits in general for electronic equipment.

Absolute Maximum Ratings (Ta=25±2˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage
Emitter to base voltage V
Collector current I
Total power dissipation PT* 0.5 W
Junction temperature T
Storage temperature T

Note: ± marks used above: +: NPN part, –: PNP part
* TC = 25˚C only when the elements are active

CBO

V

CEO

EBO

C

j

stg

transistor used)

CE(sat)

±20 V
±18 V

±5V
±1A

150 ˚C

–55 to +150 ˚C

Unit: mm

SO–10C Package

Internal Connection

1

Small Signal Transistor Arrays UN206

Electrical Characteristics (Ta=25±2˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector cutoff current I

Collector cutoff current I

Collector to base voltage V

Collector to emitter voltage V

Emitter to base voltage V

Forward voltage (DC) V

Forward current transfer ratio h

Forward current transfer ratio h

Collector to emitter saturation voltage

Collector to emitter saturation voltage

Transition frequency f

Collector output capacitance C

*Pulse measurement

CBO

CER

CBO

CEO

EBO

F

FE1

FE2

V

CE(sat)1

V

CE(sat)2

T

ob

(NPN) VCB = 20V, IE = 0 1
(PNP) VCB = –20V, IE = 0 –1
(NPN) VCE = 18V, RBE = 100kΩ 10
(PNP) VCE = –18V, RBE = 100kΩ –10
(NPN) IC = 10µA, IE = 0 20
(PNP) IC = –10µA, IE = 0 –20
(NPN) IC = 1mA, IB = 0 18
(PNP) IC = –1mA, IB = 0 –18
(NPN) IE = 10µA, IC = 0 5
(PNP) IE = –10µA, IC = 0 –5
IF = 1A 1.5 V
(NPN) VCE = 2V, IC = 0.5A* 90 360
(PNP) VCE = –2V, IC = – 0.5A* 90 360
(NPN) VCE = 2V, IC = 1.5A* 50
(PNP) VCE = –2V, IC = – 1.5A* 50
(NPN) IC = 0.3A, IB = 10mA 0.2
(PNP) IC = – 0.3A, IB = –10mA – 0.2
(NPN) IC = 0.7A, IB = 10mA 0.6
(PNP) IC = – 0.7A, IB = –10mA – 0.6
(NPN) VCB = 6V, IE = 50mA, f = 200MHz
(PNP) VCB = –6V, IE = –50mA, f = 200MHz

150
200

MHz

(NPN) VCB = 6V, IE = 0, f = 1MHz 20
(PNP) VCB = –6V, IE = 0, f = 1MHz 40

µA

µA

V

V

V

V

V

pF

Characteristics charts of PNP transistor block

— Ta IC — V

P

T

0.6

)

0.5

W

(

T

0.4

0.3

0.2

0.1

Total power dissipation P

0

0 16020 60 100 14040 12080

Ambient temperature Ta (˚C

)

2

–3.0

–2.5

)
A

(

–2.0

C

–1.5

–1.0

Collector current I

–0.5

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

CE

Ta=25˚C

IB=–14mA

–12mA
–10mA

–8mA
–6mA

–4mA

–2mA

IC — V

BE

–3.0

–2.5

)
A

(

–2.0

C

–1.5

–1.0

Collector current I

–0.5

0

0–2.4–0.4 –2.0–0.8 –1.6–1.2

)

Base to emitter voltage VBE (V

25˚C

Ta=75˚C –25˚C

VCE=–2V

)

Small Signal Transistor Arrays UN206

V

–10

)

V

(

CE(sat)

–0.3

–0.1

— I

CE(sat)

–3

–1

25˚C

Ta=75˚C

C

–25˚C

IC/IB=30

300

FE

250

200

150

hFE — I

Ta=75˚C

25˚C

–25˚C

C

VCE=–2V

Cob — V

120

)

pF

(

100

ob

80

60

CB

f=1MHz
I

=0

E

Ta=25˚C

–0.03

–0.01

–0.003

Collector to emitter saturation voltage V

–0.001

–0.01 –0.03

–0.1 –0.3 –1 –3 –10

Collector current IC (A

)

100

50

Forward current transfer ratio h

Characteristics charts of NPN transistor block

— Ta IC — V

P

T

0.6

)

0.5

W

(

T

0.4

0.3

0.2

0.1

Total power dissipation P

0

0 16020 60 100 14040 12080

Ambient temperature Ta (˚C

)

3.0

2.5

)
A

(

2.0

C

1.5

1.0

Collector current I

0.5

0

–0.01 –0.03

–0.1 –0.3 –1 –3 –10

Collector current IC (A

CE

0

012210486

Collector to emitter voltage VCE (V

)

Ta=25˚C

IB=14mA

12mA
10mA

8mA
6mA
4mA

2mA

40

20

Collector output capacitance C

0

–3 –10 –30 –100

–1

Collector to base voltage VCB (V

IC — V

3.0

2.5

)
A

(

2.0

C

1.5

1.0

25˚C

Ta=75˚C –25˚C

BE

)

VCE=2V

Collector current I

0.5

0

02.40.4 2.00.8 1.61.2

)

Base to emitter voltage VBE (V

)

V

— I

CE(sat)

10

)

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

Collector to emitter saturation voltage V

0.001

0.01 0.03

25˚C

0.1 0.3 1 3 10

Collector current IC (A

C

IC/IB=30

Ta=75˚C

–25˚C

)

hFE — I

C

300

FE

250

200

150

100

50

Forward current transfer ratio h

0

0.01 0.03

Ta=75˚C

25˚C

–25˚C

0.1 0.3 1 3 10

Collector current IC (A

VCE=2V

)

Cob — V

60

)

pF

(

50

ob

40

30

20

10

CB

Collector output capacitance C

0

3 10 30 100

1

Collector to base voltage VCB (V

f=1MHz

=0

I

E

Ta=25˚C

)

3