Page 1
EMX2 / UMX2N / IMX2
Transistors
General purpose (dual transistors)
EMX2 / UMX2N / IMX2
zFeatures
1) Two 2SC2412AK chips in a EMT or UMT or SMT
package.
zEquivalent c ircuits
EMX2 / UMX2N
2
Tr
(5) (6)
(4)
IMX2
(1)(2)(3)
Tr
1
Tr
2
(3)
(2) (1)
(6)(5)(4)
Tr
1
zAbsolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Parameter Symbol
EMX2 / UMX2N
IMX2
CBO
V
V
CEO
V
EBO
I
P
Tj
Tstg
C
C
Limits
60
50
7
150
150(TOTAL)
300(TOTAL)
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
zPackage, marking, and packaging specifications
X2
TR
IMX2
SMT6
X2
T108
3000
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMX2
EMT6
X2
T2R
8000
UMX2N
UMT6
3000
Rev.A 1/3
zExternal dimensions (Unit : mm)
EMX2
(4)
0.22
(6)
1.2
1.6
0.13
ROHM : EMT6
UMX2N
)
4
(
)
5
(
0.2
)
6
(
∗1
∗2
1.25
0.15
0.1Min.
ROHM : UMT6
EIAJ : SC-88
IMX2
)(
6
(
0.3
)(
5
)
4
1.6
2.8
0.15
0.3Min.
ROHM : SMT6
EIAJ : SC-74
(3)
0.5
1.0
(2)(5)
(1)
Each lead has same dimensions
2.1
0~0.1
Each lead has same dimensions
0~0.1
Each lead has same dimensions
1.6
0.5
0.5
)
3
(
)
2
(
1.3
0.65 0.65
0.7
0.95
0.95
0.8
2.0
0.9
2.9
1.9
1.1
)
1
(
)
1
(
)
2
(
)
3
(
Page 2
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗Transition frequency of the device.
zElectrical characteristics curves
50
20
(mA)
C
10
5
2
1
0.5
COLLECTOR CURRENT : I
0.2
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
C
C
°
C
°
25
55
100°
−
=
Ta
Fig.1 Grounded emitter propagation
characteristics
500
Ta=25°C
FE
200
100
50
VCE=5V
V
CE
=6V
BE
(V)
3V
1V
EMX2 / UMX2N / IMX2
Conditions
=60V
=7V
=50mA/5mA
=6V, IC=1mA
=12V, IE= −2mA, f=100MHz
∗
=12V, IE=0mA, f=1MHz
IC/IB=50
30µA
27µA
24µA
21µA
18µA
15µA
12µA
9µA
6µA
3µA
IB=0A
Ta=25°C
20
10
Ta=25°C
4 8 12 16
0
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
CE
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
100
80
(mA)
C
60
40
20
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : V
Ta=25°C
60
50
120
0.4 0.8 1.2 1.6 2.00
7
−
−
−
180
−
−
−
−
−
−
−
−
−
2 3.5 pF
Fig.2 Grounded emitter output
characteristics ( Ι )
500
FE
200
100
50
Ta=100°C
25°C
−55°C
−
−
−
0.1
0.1
0.4
560
−
VCE=
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB=0A
CE
5V
Unit
V
I
V
I
V
I
V
µA
V
µA
V
I
V
−
MHz
V
V
(mA)
C
COLLECTOR CURRENT : I
(V)
COLLECTOR TO EMITTER VOLTAGE : V
0.5
(V)
CE(sat)
0.2
0.1
0.05
C
=50µA
C
=1mA
E
=50µA
CB
EB
C/IB
CE
CE
CB
10
8
6
4
2
0
20
(V)
DC CURRENT GAIN : h
20
10
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
Fig.4 DC current gain vs.
collector current ( Ι )
C
(mA)
DC CURRENT GAIN : h
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
Fig.5 DC current gain vs.
collector current ( ΙΙ )
C
(mA)
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
C
(mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
Rev.A 2/3
Page 3
(V)
CE(sat)
0.05
EMX2 / UMX2N / IMX2
Transistors
Ta=100°C
25°C
−55°C
IC/IB=50
500
(MHz)
T
200
Ta=25°C
V
CE
=6V
0.5
0.2
Ta=100°C
0.1
25°C
−55°C
IC/IB=10
(V)
CE(sat)
0.05
0.5
0.2
0.1
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( Ι )
20
pF)
pF)
10
5
2
EMITTER INPUT CAPACITANCE : Cib (
1
COLLECTOR OUTPUT CAPACITANCE : Cob (
0.2 0.5 1 2 5 10 20 50
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
Cib
Ta=25°C
f=1MHz
I
I
Cob
E
C
=0A
=0A
CB
EB
Fig.10 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
0.5 1 2 5 10 20 50 100
0.2
COLLECTOR CURRENT : I
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
(ps)
bb'
200
100
50
20
10
−0.2 −0.5 −1 −2 −5 −10
BASE COLLECTOR TIME CONSTANT : Cc·r
(V)
(V)
Fig.11 Base-collector time constant
EMITTER CURRENT : I
vs. emitter current
C
(mA)
E
(mA)
Ta=25°C
f=32MH
VCB=6V
100
TRANSITION FREQUENCY : f
50
−0.5 −1 −2 −5 −10 −20 −50 −100
EMITTER CURRENT : I
Fig.9 Gain bandwidth product vs.
emitter current
Z
E
(mA)
Rev.A 3/3
Page 4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Page 5
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