Page 1
EML6 / UML6N
Transistors
General purpose transistor
(isolated transistor and diode)
EML6 / UML6N
2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package.
zApplications
DC / DC converter
Motor driver
zFeatures
1) Tr : Low V
Di : Low V
CE(sat)
F
2) Small package
zStructure
Silicon epitaxial planar transistor
Schottky barrier diode
The following characteristics apply to both Di1 and T r2.
zEquivalent circuit (EML6 / UML6N)
(4)(5)
Tr2Di1
(1) (2) (3)
zPackaging specifications
Type EML6
Package
Marking
Code
Basic ordering unit (pieces)
EMT5
T2R
8000
L6
UML6N
UMT5
L6
TR
3000
Rev.C 1/4
zDimensions (Unit : mm)
EMT5
1.6
1.0
0.5
0.5
(4)
(5)
(3)
(2)
(1)
0.22
1pin mark
Each lead has same dimensions
Abbreviated symbol : L6
ROHM : EMT5
UMT5
1pin mark
ROHM : UMT5
EIAJ : SC-88A
2.0
1.3
0.65
0.65
(5)
(4)
(1)
(2)
(3)
0.2
Each lead has same dimensions
Abbreviated symbol : L6
0.5
1.2
1.6
0.13
0.9
0.7
2.1
1.25
0.15
0.1Min.
Page 2
EML6 / UML6N
Transistors
zAbsolute maximum ratings (Ta=25°C)
Di1
Parameter Symbol
Average revtified forward current
Forward current surge peak (60Hz, 1∞)
Reverse voltage (DC)
Junction temperature
Tr2
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
∗1 Each terminal mounted on a recommended.
CBO
V
V
CEO
V
EBO
I
C
I
CP
P
d
Tj
Di1 / Tr2
Parameter Symbol
P
Power dissipation
Storage temperature
∗ Each terminal mounted on a recommended.
d
Tstg
zElectrical characteristics (T a=25°C)
Di1
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
Tr2
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
O
I
I
FSM
V
R
Tj
Limits
−55 to +125
V
I
R
BV
CEO
CBO
BV
EBO
BV
CBO
I
EBO
I
CE(sat)
V
FE
h
f
T
Cob − 7.5 −
Limits
200
125
Limits
15
12
6
500
1
120
150
150
F
12
15
6
−−
−−
− 90
270 − 680
−
1
30
Unit
V
V
V
mA
A
∗1
mW
°C
Unit
∗
mW
°C
0.40 0.50 V
−
4.0 30
−
−−
−−
−−
320
Unit
mA
A
V
°C
100
100
250 mV
−
IF=200mA
µAVR=10V
V
I
C
=1mA
V
I
C
=10µA
V
I
E
=10µA
nA VCB=15V
nA VEB=6V
IC=200mA, IB=10mA
− V
CE
=2V, IC=10mA
MHz
VCE=2V, IE=−10mA, f=100MHz
CB
=10V, IE=0mA, f=1MHz
V
pF
Rev.C 2/4
Page 3
EML6 / UML6N
Transistors
zElectrical characteristic curves
Di1
1000
100
10
Ta=125℃
Ta=75℃
1
0.1
0.01
FORWARDCURRENT:IF(mA)
0.001
0 100 200 300 400 500
FORWARDVOLTAGE：VF(mV)
VF-IFCHARACTERISTICS
Ta=25℃
Tr2
1000
VCE=2V
Pulsed
(mA)
C
100
Ta=-25℃
100000
10000
1000
100
10
1
REVERSECURRENT:IR(uA)
0.1
0.01
0102030
REVERSEVOLTAGE：VR(V)
VR-IRCHARACTERISTICS
1000
FE
100
Ta=125°C
Ta=25°C
Ta=−40°C
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
VCE=2V
Pulsed
100
f=1MHz
10
TERMINALS:Ct(pF)
CAPACITANCEBETWEEN
1
0 5 10 15 20
REVERSEVOLTAGE:VR(V)
VR-CtCHARACTERISTICS
1000
Ta=25°C
(mV)
Pulsed
CE(sat)
100
IC/IB=50
10
COLLECTOR CURRENT : I
1
0
Ta=125°C
Ta=25°C
Ta= −40°C
BASE TO EMITTER VOLTAGE : V
BE
Fig.3 Grounded emitter propagation
characteristics
1.41.0 1.20.4 0.6 0.80.2
(V)
10
DC CURRENT GAIN : h
1
1 10 100 1000
COLLECTOR CURRENT : I
C
Fig.4 DC current gain vs.
collector current
(mA)
10
IC/IB=20
IC/IB=10
1
1 10 100 1000
C
COLLECTOR CURRENT : I
COLLECTOR SATURATION VOLTAGE : V
(mA)
Fig.5 Collector-emitter saturation voltage
vs. collector current ( Ι )
1000
IC/IB=20
(mV)
Pulsed
CE (sat)
100
Ta=125
°C
25
°C
−40
10
1
1 10 100 1000
COLLECTOR SATURATION VOLTAGE : V
°C
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
10000
(mV)
BE (sat)
1000
100
10
1 10 100 1000
BASER SATURATION VOLTAGE : V
Ta=25°C
COLLECTOR CURRENT : I
Ta=−40°C
Ta=125°C
Fig.7 Base-emitter saturation voltage
vs. collector current
IC/IB=20
Pulsed
C
(mA)
1000
VCE=2V
Ta=25°C
Pulsed
(MHz)
T
100
10
TRANSITION FREQUENCY : f
1
1 10 100 1000
EMITTER CURRENT : I
Fig.8 Gain bandwidth product
vs. emitter current
E
(mA)
Rev.C 2/4
Page 4
EML6 / UML6N
Transistors
1000
100
Cib
I
E
=
0A
f=1MHz
Ta=25°C
10
(A)
C
1
0.1
Ta=25°C
Single Pulsed
1ms
10ms
100ms
DC
10
1
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.9 Collector output capacitance
Cob
1 10 1000.1
EMITTER TO BASE VOLTAGE : V
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
0.01
TRANSITION FREQUENCY : I
0.001
0.01 0.1 1 10 100
EB
V)
(
EMITTER CURRENT : V
CE
(V)
Fig.10 Safe operation area
Rev.C 3/4
Page 5
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0
Page 6
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