Page 1
General purpose transistors (dual transistors)
UMF5N
FEATURES
z
2SA2018 and DTC144E are housed independently in a package.
z Mounting possible with SOT-363 automatic mounting machines.
z Transistor elements are independent, eliminating interference.
z Mounting cost and area be cut in half.
SOT-363
1
Marking: F5
(1)(2)(3)
Equivalent circuit
DTr2 Tr1
1
R
2
R
(4) (5) (6)
Tr1 Absolute maximum ratings (Ta=25℃)
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage -15
Collector-Emitter Voltage -12
Emitter-Base Voltage -6
Collector Current -500 mA
Collector Power Dissipation 150 mW
Junction Temperature 150
Storage Temperature -55-150
V
V
V
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
1
JinYu
semiconductor
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE
V
CE(sat)
VCE=-2V, IE=-10mA, f=100MHz 260 MHz
f
T
C
ob
www.htsemi.com
=-10μA, IE=0 -15 V
=-1mA, IB=0 -12 V
=-10μA, IC=0 -6 V
VCB=-15V, IE=0 -0.1 μA
VEB=-6V, IC=0 -0.1 μA
VCE=-2V, IC=-10mA 270 680
IC=-200mA, IB=-10mA -0.25 V
VCB=-10V, IE=0, f=1MHz 6.5 pF
Date:2011/ 05
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Tr2 Absolute maximum ratings(T a=25℃)
Parameter Symbol Limits Unit
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25℃)
Parameter Symbol Min. Typ Max. Unit Conditions
Input voltage
Output voltage V
Input current I
Output current I
DC current gain G
Input resistance R
Resistance ratio R
Transition frequency f
50 V
V
CC
-10~+40 V
V
IN
IO 30
I
100
C(MAX)
Pd 150 mW
Tj 150
Tstg -55~150
V
0.5 VCC=5V, IO=100μA
I(off)
V
3.0
I(on)
0.1 0.3 V IO/II=10mA/0.5mA
O(on)
0.18 mA VI=5V
I
0.5 μA VCC=50V, VI=0
O(off)
68 VO=5V, IO=5mA
I
32.9 47 61.1 KΩ -
1
0.8 1 1.2 -
2/R1
250 MHz VCE=10V, IE=-5mA, f=100MHz
T
UMF5N
V
VO=0.3V, IO=2mA
mA
℃
℃
2
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
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