Page 1
Power management (dual transistors)
UMF21N
DESCRIPTION
Silicon epitaxial planar transistor
FEATURES
2SA2018 and DTC114E are housed independently
z
in a package.
z
Power switching circuit in a single package.
z Mounting cost and area can be cut in half.
SOT-363
1
APPLICATION
Power management circuit, mobile telephone quiver circuit
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Equivalent Circuit
DTr2 Tr1
TR1 MAXIMUM RATINGS T
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
P
C
TJ
T
stg
DTR2 Absolute maximum ratings(Ta=25 )
Supply voltage
Output current
Power dissipation
Junction temperature
Storage temperature
R
2
(4) (5) (6)
Parameter Symbol Limits Unit
Input voltage
(1)(2)(3)
R
1
a
=25℃ unless otherwise noted
Collector- Base Voltage -15 V
Collector-Emitter Voltage -12 V
Emitter-Base Voltage -6 V
Collector Current -Continuous -0.5 A
Collector Dissipation
Junction Temperature 150
Storage Temperature -55-150
V
I
C(MAX)
Tstg -55~150
℃
50 V
CC
-10~40 V
V
IN
IO 50
100
Pd 150 mW
Tj 150
MARKING:F21
F21
0.15 W
℃
℃
1
JinYu
semiconductor
www.htsemi.com
mA
℃
℃
Date:2011/ 05
Page 2
EMF23
TR1 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
DTR2 Electrical characteristics (Ta=25 )
Parameter Symbol
V
0.5 VCC=5V ,IO=100μA
Input voltage
Output voltage
Input current
I(off)
V
3
I(on)
V
O(on)
0.88 mA VI=5V
I
I
℃
0.3 V IO/II=10mA/0.5mA
V
(BR)CBO
V
(BR)CEOIC
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min. Typ Max.
IC=-10μA, IE=0
=-1mA, IB=0 -12 V
IE=-10μA, IC=0
VCB= -15 V, IE=0 -0.1
VEB=- 6V, IC=0 -0.1
VCE=-2V, IC=-10mA 270 680
IC=-200mA,IB=-10mA -0.25 V
VCE=-2V,IC=-10mA, f=
=-10V,IE=0,f=1MHz
V
CB
100
MHz
Unit
V
-15 V
-6 V
260 MHz
6.5 pF
Conditions
VO=0.3V ,IO=10 mA
A
μ
A
μ
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
2
JinYu
semiconductor
0.5 μA VCC=50V, VI=0
I
O(off)
30 VO=5V ,IO=5mA
G
I
7 10 13 KΩ
R
1
0.8 1 1.2
R
2/R1
250 MHz VCE=10V ,IE=-5mA,f=100MHz
f
T
www.htsemi.com
Date:2011/ 05
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