Page 1
UMA4NT1, UMA6NT1
Preferred Devices
Dual Common Emitter Bias
Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the UMC2NT1 series, two
BRT devices are housed in the SOT−353 package which is ideal for
low power surface mount applications where board space is at a
premium.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb−Free Packages are Available
http://onsemi.com
312
R1
Q1 Q2
4
R1
5
MARKING
DIAGRAM
MAXIMUM RATINGS (T
and Q2, − minus sign for Q1 (PNP) omitted)
Rating
Collector-Base Voltage V
Collector-Emitter Voltage V
Collector Current I
= 25°C unless otherwise noted, common for Q
A
Symbol Value Unit
CBO
CEO
C
50 Vdc
50 Vdc
100 mAdc
1
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
(Surface Mounted)
Operating and Storage Temperature Range TJ, T
Total Package Dissipation @ TA = 25°C
(Note 1)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
R
q
JA
stg
P
D
833 °C/W
−65 to +150 °C
*150 mW
DEVICE RESISTOR VALUES
Device R1 (K) R2 (K)
UMA4NT1
UMA6NT1
10
47
∞
∞
Ux M G
SC−88A/SOT−353
CASE 419A
STYLE 7
Ux = Device Code
x = 0 or 1
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
G
ORDERING INFORMATION
Device Package Shipping
UMA4NT1 SOT−353 3000/Tape & Reel
UMA4NT1G SOT−353
(Pb−Free)
UMA6NT1 SOT−353 3000/Tape & Reel
UMA6NT1G SOT−353
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
3000/Tape & Reel
3000/Tape & Reel
†
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 4
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
UMA4NT1/D
Page 2
UMA4NT1, UMA6NT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
= 50 V, IE = 0)
CB
Collector-Emitter Cutoff Current
(V
= 50 V, IB = 0)
CB
Emitter-Base Cutoff Current UMA4NT1
(V
= 6.0, IC = 5.0 mA) UMA6NT1
EB
ON CHARACTERISTICS
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
DC Current Gain UMA4NT1
(V
= 10 V, IC = 5.0 mA) UMA6NT1
CE
Collector−Emitter Saturation Voltage
(I
= 10 mA, IB = 0.3 mA)
C
Output Voltage (on)
(V
CC
= 5.0 V, V
= 2.5 V, RL = 1.0 kW)
B
Output Voltage (off)
(V
CC
= 5.0 V, V
= 0.5 V, RL = 1.0 kW)
B
Input Resistor UMA4NT1
UMA6NT1
Symbol Min Typ Max Unit
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
h
FE
V
CE(SAT)
V
OL
V
OH
R1 7.0
− − 100 nAdc
− − 500 nAdc
−
−
−
−
0.9
0.2
mAdc
50 − − Vdc
50 − − Vdc
160
160
250
250
−
−
− − 0.25 Vdc
− − 0.2 Vdc
4.9 − − Vdc
33
10
47
13
61
kW
250
200
150
100
50
, POWER DISSIPATION (MILLIWATTS)
D
P
0
−50 0 50 100 150
R
= 833°C/W
q
JA
T
, AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
http://onsemi.com
2
Page 3
UMA4NT1, UMA6NT1
0
e
6
V
, MAXIMUM COLLECTOR VOLTAGE (VOL TS)
C
, CAPACITANCE (pF)
TYPICAL ELECTRICAL CHARACTERISTICS − UMA4NT1
10
1
0.1
0.01
CE(sat)
12
10
8
6
4
ob
2
0
IC/IB = 10
TA = 75°C
IC, COLLECTOR CURRENT (mA)
Figure 2. V
VR, REVERSE BIAS VOLTAGE (VOLTS)
CE(sat)
versus I
25°C
−25°C
C
f = 1 MHz
I
= 0 mA
E
= 25°C
T
A
35
1000
TA = 75°C
100
25°C
10
, DC CURRENT GAIN
FE
h
80706050403020100
VCE = 10 V
1
IC, COLLECTOR CURRENT (mA)
−25°C
100101
100
Figure 3. DC Current Gain
100
10
75°C
1
0.1
, COLLECTOR CURRENT (mA)
C
I
4540302520151050
0.01
TA = −25°C
25°C
VO = 5 V
543210
VIN, INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
http://onsemi.com
3
Figure 5. Output Current versus Input Voltag
Page 4
UMA4NT1, UMA6NT1
0
5
V
, MAXIMUM COLLECTOR VOLTAGE (VOL TS)
C
, CAPACITANCE (pF)
TYPICAL ELECTRICAL CHARACTERISTICS − UMA6NT1
10
1
0.1
0.01
CE(sat)
12
10
8
6
4
ob
2
0
IC/IB = 10
25°C
IC, COLLECTOR CURRENT (mA)
Figure 6. V
VR, REVERSE BIAS VOLTAGE (VOLTS)
CE(sat)
−25°C
versus I
TA = 75°C
C
f = 1 MHz
I
= 0 mA
E
= 25°C
T
A
35
1000
, DC CURRENT GAIN
FE
h
6050403020100
0.01
, COLLECTOR CURRENT (mA)
C
I
0.001
4540302520151050
100
10
100
10
0.1
1
VCE = 10 V
IC, COLLECTOR CURRENT (mA)
25°C
101
Figure 7. DC Current Gain
TA = −25°C
25°C
VIN, INPUT VOLTAGE (VOLTS)
TA = 75°C
−25°C
10
75°C
VO = 5 V
43210
Figure 8. Output Capacitance
http://onsemi.com
4
Figure 9. Output Current versus Input Voltage
Page 5
UMA4NT1, UMA6NT1
PACKAGE DIMENSIONS
SC−88A / SOT−353 / SC−70
CASE 419A−02
ISSUE J
A
G
45
D 5 PL
−B−
MM
B0.2 (0.008)
S
12 3
N
J
C
H
K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
INCHES
DIMAMIN MAX MIN MAX
B 1.15 1.350.045 0.053
C 0.80 1.100.031 0.043
D 0.10 0.300.004 0.012
G 0.65 BSC0.026 BSC
H −−− 0.10−−−0.004
J 0.10 0.250.004 0.010
K 0.10 0.300.004 0.012
N 0.20 REF0.008 REF
S 2.00 2.200.079 0.087
STYLE 7:
PIN 1. BASE
2. EMITTER
3. BASE
4. COLLECTOR
5. COLLECTOR
MILLIMETERS
1.80 2.200.071 0.087
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
ǒ
inches
mm
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
UMA4NT1/D
5
Loading...