Datasheet UM5K1N Datasheet (ROHM)

Transistors

2.5V Drive Nch+Nch MOS FET

UM5K1N

zStructure Silicon N-channel MOS FET

zFeatures

1) Tw o 2SK3018 transistors in a single UMT package.

2) Mounting cost and area can be cut in half.

3) Low on-resistance.

4) Low voltage drive (2.5V) makes this device ideal for portable equipment.

5) Drive circuits can be simple.

zApplica tions Interfacing, switching (30V, 100mA)

zPackaging specifications zEquivalent circui

Type

UM5K1N

Package Code Basic ordering unit

(pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for Tr1 and T r2.>

Parameter Drain-source voltage Gate-source voltage

Drain current

Total power dissipation

Channel temperature Storage temperature

1 Pw≤10µs, Duty cycle≤50%

∗

2 With each pin mounted on the recommended lands.

∗

Continuous Pulsed

Symbol

DSS

V V

GSS

D

I

DP

∗

P

D

Tch

Tstg

∗

1

2

Limits Unit

30

±20 ±100 ±400

150

−55 to +150

zThermal resistance

Parameter

Channel to ambient

∗ With each pin mounted on the recommended lands.

Symbol Limits Unit

Rth(ch-a)

∗

zExternal dimensions (Unit : mm)

UMT5

2.0

1.3

0.65

(5)

(4)

(1)

(2)

1pin mark

(3)

0.2

Abbreviated symbol : K1

Tr1 Tr2

(1)

(1) Tr1 Gate (2) Source

V

V mA mA

mW / TOTAL

mW / ELEMENT120

˚C ˚C

(3) Tr2 Gate (4) Tr2 Drain (6) Tr1 Drain

833

1042

°C / W / TOTAL

°C / W / ELEMENT

1.25

Each lead has same dimensions

∗

Gate Protection Diode

UM5K1N

0.9

0.7

2.1

0.15

0.1Min.

(4)(6)

∗

Gate Protection Diode

(2) (3)

A protection diode has been built in between

∗

the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltagesare exceeded.

Rev.A 1/3

Transistors

zElectrical characteristics (Ta=25°C) <It is the same characteristics for Tr1 and T r2.>

Parameter Symbol

Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain curren Gate threshold voltage

Static drain-source on-stage resistance

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time

I

V

(BR)DSS

I

t

V R R

C C t

t

GSS

DSS

GS(th) DS(on) DS(on)

Y

fs

C

iss

oss rss

d(on)

r

t

d(off)

f

t

Min.

−

30

−

0.8

−

− 713

20

−

− 15 − ID=10mA, V

− 35 − V

− 80 − RL=500Ωns

− 80 − RG=10Ωns

zElectrical characteristic curves

0.15

A)

D (

0.1

0.05

DRAIN CURRENT : I

4V

3V

3.5V

2.5V

2V

0

012345

DRAIN-SOURCE VOLTAGE : V

VGS=1.5V

Ta=25˚C Pulsed

DS (

Fig.1 Typical output characteristics

V)

200m

100m

50m

A)

(

D

20m

10m

5m 2m

1m

0.5m

DRAIN CURRENT : I

0.2m

0.1m

Fig.2 Typical transfer characteristics

50

Ta=125˚C

20

(on) (Ω)

DS

10

5

75˚C 25˚C

−25˚C

V

GS=4V

Pulsed

(on) (Ω)

DS

Typ. Max. Unit Test Conditions

µAV

±1

−

1

−

1.5

−

8

5

−

9 4

1

Ta=125˚C

75˚C 25˚C

−25˚C

−

Ta=125˚C

2

75˚C 25˚C

−25˚C

13

V

DS

=3V

Pulsed

04

GATE-SOURCE VOLTAGE : V

50

20

10

5

V

µA

V

Ω

mS

pF pF pF

3

GS

(

V

GS=2.5V

Pulsed

V)

GS=±

I

D=

10µA, V

V

DS=

30V, V

V

DS=

3V, ID=100µA

I

D=

10mA, V

D=

1mA, V

I I

D=

10mA, V

V

DS=

5V

GS=

0V

V f

=

1MHz

GS=

5Vns

20V, V

DS=

0V

GS=

0V

GS=

0V

GS=

4V

GS=

2.5V

DS=

3V

DD

5Vns

2

(th) (V)

GS

1.5

1

0.5

GATE THRESHOLD VOLTAGE : V

0

−50 0

−25 25 50 75 100 125 150

CHANNEL TEMPERATURE : Tch (˚C)

Fig.3 Gate threshold voltage vs. channel temperature

15

(on) (Ω)

DS

10

UM5K1N

V

DS

=3V

D

=0.1mA

I Pulsed

Ta=25˚C Pulsed

2

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.5

0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5

0.001 DRAIN CURRENT : ID (A)

Fig.4 Static drain-source on-state

resistance vs. drain current ( I )

2

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.5

0.001

0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 DRAIN CURRENT : ID (A)

Fig.5 Static drain-source on-state

resistance vs. drain current ( II )

5

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0

0 5 10 15 20

GATE-SOURCE VOLTAGE : V

Fig.6 Static drain-source on-state

resistance vs. gate-source voltage

ID=0.1A

ID=0.05A

GS

(

V)

Rev.A 2/3

Transistors

9

8

(on) (Ω)

7

DS

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

Fig.7 Static drain-source on-state

ID=100mA

6

5 4

3

2 1

0

−25 50 75 100 125

−50 0 25 150

CHANNEL TEMPERATURE : Tch (˚C)

resistance vs. channel temperature

ID=50mA

200m

A)

(

100m

DR

50m 20m

10m

V

GS

=4V

5m 2m

1m

0.5m

REVERSE DRAIN CURRENT : I

0.2m

0.1m

SOURCE-DRAIN VOLTAGE : V

Fig.10 Reverse drain current vs.

source-drain voltage ( II )

0V

10.50

VGS=4V Pulsed

Ta=25˚C Pulsed

SD

(V)

CAPACITANCE : C (pF)

1.5

0.5

0.2

Ta=−25˚C

0.1

25˚C

0.05

0.02

0.01

0.005

FORWARD TRANSFER

ADMITTANCE : Yfs (S)

0.002

0.001

Fig.8 Forward transfer

50

20

10

5

2

1

0.5

0.1

Fig.11 Typical capacitance vs.

75˚C

125˚C

0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05

0.0001 DRAIN CURRENT : I

D

admittance vs. drain current

Ta

f=1MH VGS=0V

0.2 0.5 1 2 5 10 20 50

DRAIN-SOURCE VOLTAGE : V

DS

drain-source voltage

V

Pulsed

0.1 0.2 0.5

(

A)

=25˚C

Ciss

Coss

Crss

(V)

UM5K1N

200m

DS

=3V

Z

(A)

100m

DR

50m

20m 10m

5m 2m

1m

0.5m

REVERSE DRAIN CURRENT : I

0.2m

0.1m

SOURCE-DRAIN VOLTAGE : V

Fig.9 Reverse drain current vs.

source-drain voltage ( I )

1000

500

200 100

50

20 10

SWITCHING TIME : t (ns)

5

2

0.1

Fig.12 Switching characteristics (See Figures 13 and 14 for the measurment circuit and resultant waveforms)

t

f

t

d (off)

t

r

t

d (on)

0.2 0.5 1 2 5 10 20 50

DRAIN CURRENT : I

Ta=125˚C

75˚C 25˚C

−25˚C

10.50

D

(

mA)

Ta

V V R Pulsed

V

GS

Pulsed

SD

=25˚C

DD

=5V

GS

=5V

G

=10Ω

(V)

=0V

1.5

100

zSwitching characteristics measurement circuit

Pulse width

VGS

RG

D.U.T.

D

I

VDS

RL

VDD

Fig.13 Switching time measurement circuit

t

d (on)

50%

10%

t

on

10%

t

r

90%

V

GS

V

DS

Fig.14 Switching time waveforms

90%

t

d (off)

50%

10%

90%

t

f

t

off

Rev.A 3/3

Appendix

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1