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UNISONIC TECHNOLOGIES CO., LTD
UFZ24N
Power MOSFET
17A, 55V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UFZ24N is N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with a minimum on-state resistance and superior switching
performance. The UTC UFZ24N is suitable for high efficiency
synchronous rectification in SMPS, primary side switch and telecom
bricks.
FEATURES
* R
* High switching speed
* Low gate charge
SYMBOL
≤ 0.07 Ω @ VGS=10V, ID=10A
DS(ON)
1
TO-220
1
SOT-223
1
TO-251
1
TO-252
ORDERING INFORMATION
Ordering Number
Lead Free Halogen Free 1 2 3
UFZ24NL-AA3-R UFZ24NG-AA3-R SOT-223 G D S Tape Reel
UFZ24NL-TA3-T UFZ24NG-TA3-T TO-220 G D S Tube
UFZ24NL-TM3-T UFZ24NG-TM3-T TO-251 G D S Tube
UFZ24NL-TN3-T UFZ24NG-TN3-T TO-252 G D S Tube
UFZ24NL-TN3-R UFZ24NG-TN3-R TO-252 G D S Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
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Package
Pin Assignment
Packing
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UFZ24N Power MOSFET
MARKING
SOT-223 TO-220 / TO-251 / TO-252
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UFZ24N Power MOSFET
ABSOLUTE MAXIMUM RATINGS (T
=25°С, unless otherwise specified)
C
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
=25°C
C
TC=100°C 10 A
Drain Current
Continuous
55 V
DSS
±20 V
GSS
I
D
17 A
Pulsed (Note 1) IDM 40 A
Avalanche Current (Note 1) IAR 10 A
Avalanche Energy Single Pulsed (Note 2) EAS 135 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 16 V/ns
Power Dissipation
(T
=25°C)
C
SOT-223
P
TO-220 45 W
D
TO-251/TO-252 30 W
3 W
Junction Temperature TJ -55 ~ +175 °C
Storage Temperature Range T
-55 ~ +175 °C
STG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=1.0mH, I
4. I
≤10A, di/dt≤200A/µs, VDD≤BV
SD
=16A, VDD=25V, RG=25Ω, Starting TJ=25°C.
AS
, Starting TJ≤175°C.
DSS
THERMAL DATA
PARAMETER SYMBOL RATING UNIT
SOT-223
Junction to Ambient
TO-220 62.5 °C/W
θJA
TO-251/TO-252 100 °C/W
SOT-223
Junction to Case
TO-220 2.77 °C/W
θJC
TO-251/TO-252 4.16 (Note) °C/W
Note: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
150 °C/W
41.6 (Note) °C/W
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UFZ24N Power MOSFET
)
)
)
)
r
r
ELECTRICAL CHARACTERISTICS (T
=25°C, unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
Drain-Source Leakage Current I
Gate-Source Leakage Current
Forward
Reverse VGS=-20V, VDS=0V -100 nA
ID=250µA, VGS=0V 55 V
DSS
VDS=55V, VGS=0V 25 µA
DSS
=+20V, VDS=0V +100 nA
V
I
GSS
GS
ON CHARACTERISTICS
Gate Threshold Voltage V
Static Drain-Source On-State Resistance R
VDS=VGS, ID=250µA 2.0 4.0 V
GS(TH
VGS=10V, ID=10A 0.07 Ω
DS(ON
DYNAMIC PARAMETERS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
ISS
VDS=25V, VGS=0V, f=1.0MHz
175 pF
OSS
27 pF
RSS
770 pF
SWITCHING PARAMETERS
Total Gate Charge (Note 1) QG
Gate to Source Charge QGS 8 nC
Gate to Drain Charge QGD 7 nC
Turn-ON Delay Time (Note 1) t
D(ON
Rise Time tR 20 ns
Turn-OFF Delay Time t
D(OFF
V
=44V, VGS=10V, ID=17A ,
DS
(Note 1, 2)
VDD=27V, VGS=10V, ID=17A,
R
=25Ω (Note 1, 2)
60 ns
G
28 nC
9 ns
Fall-Time tF 24 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current IS
Maximum Body-Diode Pulsed Current ISM 40A
17A
Drain-Source Diode Forward Voltage (Note 1) VSD IS=10A, VGS=0V 1.3 V
Reverse Recovery Time (Note 1) t
Reverse Recovery Charge Q
IS=10A, VGS=0V,
r
dI
93 180 nC
r
/dt =100A/µs
F
63 83 ns
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
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UFZ24N Power MOSFET
TEST CIRCUITS AND WAVEFORMS
10V
R
G
V
V
GS
DS
R
Resistive Switching Test Circuit
D
DUT
V
DS
90%
10%
V
GS
t
t
d(ON)
R
t
ON
Resistive Switching Waveforms
t
d(OFF)
t
OFF
t
F
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UFZ24N Power MOSFET
TEST CIRCUITS AND WAVEFORMS
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
ISD controlled by pulse period
V
GS
(Driver)
I
SD
(DUT)
V
DS
(DUT)
Gate Pulse Width
D=
Gate Pulse Period
I
, Body Diode Forward Current
FM
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
10V
V
DD
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UFZ24N Power MOSFET
TYPICAL CHARACTERISTICS
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UFZ24N Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
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UFZ24N Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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