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UFL200FA60P
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 200 A
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(V
= 2500 VAC)
ISOL
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
SOT-227
• Optimized for power conversion: Welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
DESCRIPTION
PRODUCT SUMMARY
t
rr
I
at TC = 105 °C 200 A
F(AV)
V
R
102 ns
600 V
The UFL200FA60P insulated modules integrate two state of
the art Vishay Semiconductors ultrafast recovery rectifiers in
the compact, industry standard SOT-227 package. The
planar structure of the diodes, and the platinum doping
life-time control, provide a ultrasoft recovery current shape,
together with the best overall performance, ruggedness and
reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current per diode I
Single pulse forward current per diode I
Maximum power dissipation per module P
Isolation voltage V
Operating junction and storage temperatures T
J
FSM
ISOL
, T
R
F
D
Stg
TC = 85 °C 144
TC = 25 °C 1000
TC = 85 °C 360 W
Any terminal to case, t = 1 min 2500 V
600 V
A
- 55 to 175 °C
Document Number: 94551 For technical questions within your region, please contact one of the following: www.vishay.com
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UFL200FA60P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 200 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
Forward voltage V
Reverse leakage current I
BR
FM
RM
Junction capacitance C
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
IR = 100 μA 600 - -
IF = 100 A - 1.28 1.44
I
= 200 A - 1.48 1.66
F
I
= 100 A, TJ = 125 °C - 1.13 1.24
F
= 200 A - 1.37 1.55
I
F
VR = VR rated - 5 100 μA
T
= 175 °C, VR = VR rated - 0.2 1 mA
J
VR = 600 V - 80 - pF
T
TJ = 25 °C
T
= 125 °C - 210 293
J
TJ = 25 °C - 9 12
T
= 125 °C - 21 25
J
TJ = 25 °C - 443 744
rr
T
= 125 °C - 2086 3355
J
I
= 50 A
F
= 200 V
V
R
/dt = 200 A/μs
dI
F
- 102 141
V
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case,
single leg conducting
Junction to case,
R
thJC
both leg conducting
Case to heatsink R
thCS
Flat, greased surface - 0.05 -
Weight -30- g
Mounting torque -1.3-Nm
--0.5°C/W
- - 0.25
K/W
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Page 3
Forward Voltage Drop - VF (V)
Instantaneous Forward Current - I
F
(A)
0.0 0.5 1.0 1.5 2.0 2.5
1
10
100
1000
Tj = 25°C
Tj = 125°C
Tj = 175°C
Reverse Voltage - VR (V)
Reverse Current - I
R
(μA)
100 200 300 400 500 600
0.001
0.01
0.1
1
10
100
1000
25°C
175°C
125°C
UFL200FA60P
Insulated Ultrafast
Rectifier Module, 200 A
10000
(pF)
T
Vishay Semiconductors
Fig. 1 - Typical Values of Reverse Current vs.
1000
Reverse Voltage
T = 25˚C
J
Fig. 1 - Typical Forward Voltage Drop Characteristics
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Revision: 21-Jul-10 DiodesAmericas@vishay.com
100
Junction Capacitance - C
10
10 100 1000
Reverse Voltage - VR (V)
(Per Diode)
Fig. 2 - Typical Junction Capacitance vs. Reverse Voltage
1
(°C/W)
thJC
P
DM
0.1
Thermal Impedance Z
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
t
1
0.01
0.0001 0.001 0.01 0.1 1 10
t1, Rectangular Pulse Duration (Seconds)
Fig. 3 - Maximum Thermal Impedance Z
Characteristics (Per Diode)
thJC
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t
2
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UFL200FA60P
Vishay Semiconductors
200
150
100
50
Square wave (D=0.50)
80% rated Vr applied
Allowable Case Temperature (°C)
see note (1)
0
0 50 100 150 200 250
Average Forward Current - I
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
DC
Insulated Ultrafast
Rectifier Module, 200 A
(A)
F(AV)
250
Vr = 200V
200
150
If = 50A, 125°C
trr ( ns )
100
50
If = 50A, 25°C
diF/dt (A/μs )
Fig. 6 - Typical Reverse Recovery Time vs. dI
0001001
/dt
F
180
150
120
RMS Limit
90
60
30
Average Power Loss ( W )
0
0 255075100125150
Average Forward Current - I
Fig. 5 - Forward Power Loss Characteristics (Per Leg)
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
x VFM at (I
F(AV)
DC
REV
) x R
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
F(AV)
;
thJC
/D) (see fig. 6);
F(AV)
(A)
3500
Vr = 200V
3000
2500
2000
1500
Qrr ( nC )
1000
500
If = 50A, 125°C
If = 50A, 25°C
0
0001001
diF/dt (A/μs )
Fig. 7 - Typical Stored Charge vs. dI
R
/dt
F
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0001001
0
10
20
30
40
50
If = 50A, 125°C
If = 50A, 25°C
Vr = 200V
Irr ( A )
diF/dt (A/μs )
UFL200FA60P
Insulated Ultrafast
Rectifier Module, 200 A
Fig. 9 - Typical Stored Current vs. dIF/dt
Vishay Semiconductors
= 200 V
V
R
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
Fig. 10 - Reverse Recovery Parameter Test Circuit
G
D
IRFP250
S
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Page 6
UFL200FA60P
1 - Ultrafast rectifier
2 - Ultrafast Pt low V
F
3 - Current rating (200 = 200 A)
4 - Circuit configuration (2 separate diodes, parallel pin-out)
5 - Package indicator (SOT-227 standard isolated base)
6 - Voltage rating (60 = 600 V)
7
- P = Lead (Pb)-free
Device code
51324
67
UF L 200 F A 60 P
Vishay Semiconductors
I
F
0
(1) dI
/dt - rate of change of current
F
through zero crossing
- peak reverse recovery current
(2) I
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
Insulated Ultrafast
Rectifier Module, 200 A
(3)
t
rr
t
a
(2)
I
RRM
dIF/dt
(1)
to point where a line passing
F
and 0.50 I
RRM
RRM
Fig. 11 - Reverse Recovery Waveform and Definitions
t
b
0.5 I
dI
(rec)M
0.75 I
RRM
(4) Q
- area under curve dened by t
rr
and I
RRM
(5) dI
current during t
Q
rr
/dt - peak rate of change of
(rec)M
(4)
Q
rr
RRM
(5)
/dt
trr x I
=
portion of t
b
rr
RRM
2
rr
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
1
2
4
3
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95036
Packaging information www.vishay.com/doc?95037
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Page 7
PACKAGING INFORMATION
Packaging Information
Vishay High Power Products
SOT-227
Tube
Quantities per tube is 10
M4 screw and washer included
Document Number: 95037 For technical questions concerning discrete products, contact: diodestech@vishay.com
Revision: 04-Jul-07 For technical questions concerning module products, contact: indmodules@vishay.com
www.vishay.com
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DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Ø 4.40 (0.173)
Ø 4.20 (0.165)
4 x M4 nuts
-A-
Outline Dimensions
Vishay High Power Products
SOT-227
Chamfer
2.00 (0.079) x 45°
4
12.50 (0.492)
12
7.50 (0.295)
30.20 (1.189)
29.80 (1.173)
2.10 (0.082)
1.90 (0.075)
8.10 (0.319)
4 x
7.70 (0.303)
Notes
• Dimensioning and tolerancing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
3
6.25 (0.246)
15.00 (0.590)
2.10 (0.082)
1.90 (0.075)
25.70 (1.012)
25.20 (0.992)
R full
0.25 (0.010)
-C-
0.12 (0.005)
-B-
MMM
CA B
12.30 (0.484)
11.80 (0.464)
Document Number: 95036 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
Revision: 28-Aug-07 For technical questions concerning module products, contact: ind-modules@vishay.com
www.vishay.com
1
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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