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Insulated Ultrafast Rectifier Module, 200 A
SOT-227
PRODUCT SUMMARY
V
R
(1)
I
at TC = 87 °C per module 200 A
F(AV)
t
rr
Note
(1)
Maximum I
maximum termperature of terminals
current admitted 100 A to do not exceed the
RMS
400 V
60 ns
UFB200FA40P
Vishay Semiconductors
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(V
= 2500 VAC)
ISOL
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
• Optimized for power conversion: welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The UFB200FA40P insulated modules integrate two state of
the art ultrafast recovery rectifiers in the compact, industry
standard SOT-227 package. The planar structure of the
diodes, and the platinum doping life time control, provide a
ultrasoft recovery current shape, together with the
best overall performance, ruggedness and reliability
characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current per diode I
Single pulse forward current per diode I
Maximum power dissipation per module P
RMS isolation voltage V
Operating junction and storage temperatures T
Note
(1)
Maximum I
Document Number: 94088 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Jul-10 DiodesAmericas@vishay.com
current admitted 100 A to do not exceed the maximum termperature of terminals
RMS
R
TC = 25 °C 202
= 90 °C 117
C
TC = 25 °C 1300
TC = 90 °C 240 W
Any terminal to case, t = 1 minute 2500 V
Stg
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J
F
FSM
ISOL
, T
(1)
D
400 V
AT
- 55 to 150 °C
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UFB200FA40P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 200 A
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
Forward voltage V
Reverse leakage current I
BR
FM
RM
Junction capacitance C
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
IR = 100 μA 400 - -
IF = 100 A - 1.04 1.24
I
= 100 A, TJ = 150 °C - 0.94 1.00
F
VR = VR rated - - 50 μA
T
= 150 °C, VR = VR rated - - 4 mA
J
VR = 400 V - 100 - pF
T
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - - 60
= 25 °C
J
= 125 °C - 172 -
T
J
TJ = 25 °C - 10.5 -
T
= 125 °C - 20.2 -
J
= 150 A
I
F
dI
/dt = 200 A/μs
F
V
= 200 V
R
-93-
TJ = 25 °C - 490 -
rr
T
= 125 °C - 1740 -
J
V
nsT
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
Case to heatsink R
R
thJC
thCS
Flat, greased surface - 0.05 -
Weight -30- g
Mounting torque -1.3-Nm
--0.5
°C/WJunction to case, both leg conducting - - 0.25
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Page 3
0.01
0.1
1
10
100
0 200 300
VR - Reverse Voltage (V)
I
R
- Reverse Current (µA)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
400100
0.001
1000
1000
10
100 1000
10
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
10 000
100
UFB200FA40P
1000
100
TJ = 150 °C
= 125 °C
T
10
1
- Instantaneous Forward Current (A)
F
I
0
0.4 0.8 1.2 1.6
J
= 25 °C
T
J
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
Insulated Ultrafast
Rectifier Module, 200 A
Vishay Semiconductors
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Document Number: 94088 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Jul-10 DiodesAmericas@vishay.com
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
Single pulse
(thermal resistance)
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.0001 0.001 0.01 0.1 1
Fig. 4 - Maximum Thermal Impedance Z
t1 - Rectangular Pulse Duration (s)
Characteristics (Per Diode)
thJC
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P
DM
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1/t2
t
1
thJC
t
2
.
+ T
C
.
10
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UFB200FA40P
0
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
140
160
80
DC
60
40 120
240
20
40
80 160
100
120
200
0
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
040
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
20 80
60
120
160
120
160
80
40
60
100
140
20
100
140
RMS limit
Vishay Semiconductors
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Insulated Ultrafast
Rectifier Module, 200 A
250
200
150
(ns)
rr
t
100
50
100 1000
Fig. 7 - Typical Reverse Recovery Time vs. dI
5000
4500
4000
3500
3000
2500
(nC)
rr
Q
2000
1500
1000
500
0
100 1000
VR = 200 V
= 125 °C
T
J
= 25 °C
T
J
IF = 150 A
= 75 A
I
F
dIF/dt (A/µs)
VR = 200 V
= 125 °C
T
J
= 25 °C
T
J
IF = 150 A
= 75 A
I
F
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
/dt
F
/dt
F
Note
(1)
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Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
REV
x VFM at (I
F(AV)
) x R
;
thJC
/D) (see fig. 6);
F(AV)
R
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Page 5
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dIF/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
trr x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
UFB200FA40P
Insulated Ultrafast
Rectifier Module, 200 A
= 200 V
V
R
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
G
Fig. 9 - Reverse Recovery Parameter Test Circuit
D
IRFP250
S
Vishay Semiconductors
Document Number: 94088 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Jul-10 DiodesAmericas@vishay.com
Fig. 10 - Reverse Recovery Waveform and Definitions
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UFB200FA40P
1 - Ultrafast rectifier
2 - Ultrafast Pt diffused
3 - Current rating (200 = 200 A)
4 - Circuit configuration (2 separate diodes, parallel pin-out)
5 - Package indicator (SOT-227 standard isolated base)
6 - Voltage rating (40 = 400 V)
7 - None = Standard production
P = Lead (Pb)-free
Quantity per tube is 10, M4 screw and washer included
Device code
51324
67
UF B 200 F A 40 P
1
4
2
3
Vishay Semiconductors
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
Insulated Ultrafast
Rectifier Module, 200 A
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95036
Packaging information www.vishay.com/doc?95037
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Page 7
PACKAGING INFORMATION
Packaging Information
Vishay High Power Products
SOT-227
Tube
Quantities per tube is 10
M4 screw and washer included
Document Number: 95037 For technical questions concerning discrete products, contact: diodestech@vishay.com
Revision: 04-Jul-07 For technical questions concerning module products, contact: indmodules@vishay.com
www.vishay.com
1
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DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Ø 4.40 (0.173)
Ø 4.20 (0.165)
4 x M4 nuts
-A-
Outline Dimensions
Vishay High Power Products
SOT-227
Chamfer
2.00 (0.079) x 45°
4
12.50 (0.492)
12
7.50 (0.295)
30.20 (1.189)
29.80 (1.173)
2.10 (0.082)
1.90 (0.075)
8.10 (0.319)
4 x
7.70 (0.303)
Notes
• Dimensioning and tolerancing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
3
6.25 (0.246)
15.00 (0.590)
2.10 (0.082)
1.90 (0.075)
25.70 (1.012)
25.20 (0.992)
R full
0.25 (0.010)
-C-
0.12 (0.005)
-B-
MMM
CA B
12.30 (0.484)
11.80 (0.464)
Document Number: 95036 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
Revision: 28-Aug-07 For technical questions concerning module products, contact: ind-modules@vishay.com
www.vishay.com
1
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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