Page 1
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an AMP company
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RF MOSFET Power Transistor, 4OW, 28V
100 -
500 MHz
Features
l N-Channel Enhancement Mode Device
l DMOS Structure
l Lower Capacitances for Broadband Operation
l High Saturated Output Power
l Lower Noise Figure Than Competitive Devices
Absolute Maximum Ratings at 25°C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source&rent
Power Dissipation
1 JunctionTemperature 1 T, (
Storage Temperature
Thermal Resistance
Symbol Rating
V
V
T
8
OS
GS
‘OS
P,
ST0
JC
65
20
4’
116
200
-55 to +150 “C
1.52 “C/w
UF2840G
v2.00
Units
V
V
A
w
I “C I
1 F I 6.22 I 6.48 1 a245 I .2X5 I
Electrical Characteristics at 25°C
* Per Side
Specificatms Subject to Change Without Notice.
M/A-COM, Inc.
1 K I l.18 I 203 I .070 I x180 I
Page 2
RF MOSFET Power Transistor, 4OW, 28V
Typical Broadband Performance Curves
U F2840G
v2.00
25
100
GAIN vs FREQUENCY
V,,=28 V I,,=500 mA P,,,=40 W
200
FREQUENCY (MHz)
300 400
65 .
" 3
6
$ 60
.
0
ii
::
55 -
500
100 200
POWER OUTPUT vs POWER INPUT
V,,=28 V I,,=500 mA
EFFICIENCY vs FREQUENCY
V,,=28 V I,,=500 mA P,,,~40 W
300
FREQUENCY (%)
400 500
Specifications Subject to Change Without Notice.
0.25 0.5
POWER INPUT (W)
1 2
2.5
M/A-COM, Inc.
Page 3
RF MOSFET Power Transistor, 4OW, 28V
Typical Device Impedance
U F2840G
v2.00
Frequency (MHz)
100
200
300
I 400
I 500
Z,, (OHMS)
6.0 - j
20.0
3.5 -j
11.5
2.5 - j
5.5
1 3.0 + j 0.0
( 4.0 + j 3.0
Z
LOAD (OHMS)
25.0 + j 27.0
16.5 + j 19.5
13.0 + j 13.0
1 12.O+j9.0
1 12.O+j5.0
V,,=28 V, I,,=500 mA, P,,,=40.0 Watts
Z,, is the series equivalent input impedance of the device from gate to gate.
Z LOAD is the optimum series equivalent load impedance as measured from drain to ground.
RF Test
Fixture
VGS
33
0
I
cgIL
- -
Ll
VDS - 28 VOLTS
IDQ = 500r'A
Cl0
- - -
- - -
I
1,
+VDD
MIA-COM, Inc.
Rf+$yFg
-
Specifications Subject to Change Without Notice.
I
-
Cl,C3
CZ
C4,C5,C6,
c7
C8
c9, CL?
Cl0
Cl1
Cl3
Cl4
Ll
LZ,L3
L4
Rl,RZ
R3
Tl
T2
T3
Ql
BOARD
QlB
PARTS LIST
CAPACITOR 1SpF
CAPACITOR 7pF
CHIP CAPACITOR 62.0pF ATC
CHIP CAPACITOR 9.lpF ATC
CAPACITOR 1000pF
TRIWER CAPACITOR t-500pF
CAPACITOR ATC 5BopF
MONOLITHIC CERAMIC CAPACITOR 0.luF
ELECTROLYTIC CAPACITOR 50uF 50 V.
4 TURNS OF NO. 22 AWG ON '0.35"
6 TURNS OF NO. 22 AWG ON '0.35"
8 TURNS OF NO. 22 AWG ON R3
RESISTOR 12K OHMS 0.25 WATT
RESISTOR 33 OHMS 3 WA-ITS
50 OHM SEMI-RIGID COAX 2.1" X '0.085"
25 OHM SEMI-RIGID COAX 2X 2.3" X '0.070"
25 OHM SEMI-RIGID COAX 3.3" X '0.070"
UF2840G
FR4 0.062"
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