Page 1
RF MOSFET Power Transistor, 2OW, 28V
100 - 500 MHz
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices
. .
Absolute Maximum Ratings at 25°C
Parameter
Drain-SourceVoltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
StorageTemperature
Thermal Resistance
1 Symbol 1 Rating Units
T
V
V
I
OS
PO
T
ST0
8
JC
OS
GS
6.5
20
4
61
200 “C
-55 to +150
2.66 “C/W
UF2820R
V
V
A
w
“C
Electrical Characteristics at 25°C
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
Specifications Subject to Change Without Notice.
C
ass
C
Rss
GP
00
VSWR-T - 2O:l -
10 50 -
30
8
V,,=28.0 V, F=l .O MHz
V,,=28.0 V, F=l .O MHz
PF
V,,=28.0 V, F=l .O MHz
PF
V,,=28.0 V, 1,,=100.0 mA, P,fl20.0 W, F=500 MHz
dB
V,,=28.0 V, I,,=1 00.0 mA, P,s20.0 W, F=500 MHz
%
V,,=28.0 V, l,,=lOO.O mA, P,e20.0 W, F=500 MHz
MIA-COM, Inc.
Page 2
RF MOSFET Power Transistor, 2OW, 28V
Typical Broadband Performance Curves
UF2820R
v2.00
GAIN vs FREQUENCY
VD,=28 V I,,=1 00 mA PO,,,=20 W
.T
10 I
100 200 300 400 5w
FREQUENCY (MHz)
POWER OUTPUT vs POWER INPUT
25
V,,=28 V I,,=100 mA
EFFICIENCY vs FREQUENCY
I’,,=28 V IDD=l 00 mA PO,=20 W
‘OF
100
200
FREQUENCY (MHz)
300
POWER OUTPUT vs POWER INPUT
25
V,,=28 V I,,=1 00 mA
500
0
0.1 0.2 0.3 0.5 1.0 1.5 2.0
POWER INPUT (W)
Specifications Subject to Change Without Notice.
IWA-COM, Inc.
01
0.1 02 0.3 0.5 1.0 1.5 2.0
POWER INPUT(W)
NOISE FIGURE vs FREQUENCY
VDo=28 V I,,=1 00 mA
Page 3
RF MOSFET Power Transistor, 2OW, 28V
Typical Device Impedance
U F2820R
v2.00
Frequency (MHz)
100
200
300
400
500
z,, (OHMS)
8.0-j 16.0
5.5 - j 8.0
4.0 - j 3.8
3.0 - j 2.0
2.0 + J 1 .O
z
LoAD (OHMS)
12.O+j6.0
9.3 + j 6.0
6.8 + j 5.5
4.5 + J 4.5
3.0 + j 3.0
V,,=28 V, I,,=100 mA, P,,,=20.0 Watts
Z,, is the series equivalent input impedance of the device from gate to source.
Z LOAD is the optimum series equivalent load impedance as measured from drain to source.
VDD
RF Test Fixture
A
P
VGG VGG
J3 J3
0
Q
- -
RF IN RF IN
.Jl
c1,c&c10
c7
cz.c5
M
w
ca
c9
Cl1
Cl.2
L1
L2
L3
L4
ls
L6
Rl
07
BOARD
Specifications Subject to Change Without Notice.
PARTS LlS7
CAPACITOR 1ooOpF
CAPACITOR 1QF
CAPACITOR 2DpF
CAPACiTOR 25pF
CAPACVOR S4OpF
FEEDTHROUGH CAPA’XOR SOOPF
MONOLITHIC CERAMIC CAPACITOR 0.1 uF
ELEcTROLYnC CAPACTOR 5OuF 50 VOLTS
0.25.X 0.63 HAIRPIN. NO. 22 AWG
0.25’ X 0.20’ MICROSTRIP LINE
0.2SX 0.40’ MICROSTRIP UNE
0.30 X 0.06’ HAIRPIN. NO. 16 AWG
6 TURNS OF NC. 20 AWG ON ‘0.30’. CLOSE WOUND
12 NRNS OF NO. 20 AWG ON ‘OLW. CLOSE WOUND
RESISTOR 72K OWS 025 WAlT
UF262DR
FPd o.oe
M/A-COM, Inc.
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