Page 1
e-5 -
*
an AMP company
-,--5 3
-a==
.--
---
=
- = =
=- - -
RF MOSFET Power Transistor, IOOW, 28V
100 - 500 MHz
Features
l N-Channel Enhancement &lode Device
l DMOS Structure
l Lower Capacitances for Broadband Operation
l High Saturated Output Power
l Lower Noise Figure Than Competitive Devices
Absolute Maximum Ratings at 25°C
I Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
JunctionTemperature
Storage Temperature
Thermal Resistance
( Symbol 1 Rating (
T
V
V
‘DS
PD
TJ
8
DS
GS
sic
IP
65
20
12
250
200
-55 to +150
0.7
UF281 OOV
v2.00
Units
V
V
A
W
“C
“C
“crw
Electrical Characteristics at 25°C
_____.._~~
Parameter
Drain-Source Breakdown Voltage
Drain-Source LeakageCurrent
Gate-Source Leakage Current
Gate Threshold Voltage
ForwardTransconductance
input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
.
Drain Efficiency
Load Mismatch Tolerance
- Per Side
Specifications Subject to Change Wiihout Notice.
M/A-COM, Inc.
Symbol
Min Max
BV,,, 65 -
I
DSS
‘GSS
V
GSIW
GM
c -
15s
C
ass
C
RSS
GP
2.0
1.5 -
10 -
50 -
VSWR-T -
Units
V,.=O.O V. I& 5.0 mA
V
3.0 mA
,
) 3.0 ] fl 1 v,,=2ov, vDs=o.o v
I
6.0 V
135 pF
90
24 pF
3O:l -
V,,=28.0 V, V,,=O.O V’
,
I
V,,=lO.O V, 1,,=300.0 mA‘
V,,=10.0 V, 1,,=3000.0 mA, AV,,=l .O V, 80 us Pulse’
S
V,,=28.0 V, F=l .O MHz’
V,,=28.0 V, F=l .O MHz’
PF
V,,=28.0 V, F=l .O MHz’
V,,=28.0 V, 1,,=600.0 mA, P,,$OO.O W, F=SOO MHz
dB
V,,=28.0 V, 1,,=600.0 mA, P,,,=lOO.O W. F=500 MHZ
%
V,,=28.0 V, lDD=800.0 mA,
lest Conditions
PbbylOO.0 W, F=500 MHz
Page 2
RF MOSFET Power Transistor, lOOW, 28V
Typical Broadband Performance Curves
UF281 OOV
v2.00
POWER OUTPUT vs SUPPLY VOLTAGE
120
P&O W I,,=600 mA F&O0 MHz
80
EFFICIENCY vs FREQUENCY
P,,=lO W I,,=600 mA (Push-Pull Device)
loo
100 200 300 400 500 14 16 20 24 26 22
FREQUENCY (MHz)
0
SUPPLY VOLTAGE(V)
POWER OUTPUT vs POWER INPUT
V,,=28 V I,,=600 mA (Push-Pull Device)
Specifications Subject to Change Without Notice.
2 4 6 8 10 12
POWER INPUT(W)
M/A-COM, Inc.
Page 3
RF MOSFET Power Transistor, IOOW, 28V
Typical Device Impedance
Frequency (MHz)
100
300
500
Z,, is the series equivalent input impedance of the device from gate to gate.
LOAD is.tQe optimum series equivalent load impedance as measured from drain to drain.
Z
5, (OHMS)
4.5 - j 6.0
2.25 - j 1.75
1.5 + j 5.5
V,,=28 V, I,,=690 mA, P,,,=lOO.O Watts
RF Test Fixture
UF281 OOV
v2.00
7
Z,,,, (OHMS)
14.5+j 0.5
7.5 + j 1 .O
3.5 - j 3.5
,I
0
Cl.c6
c2.Q
c4
C5
c6.c7
c%ClO
Cl1
Cl2
Rl .R4
rum
Ll
K
Tl
72
T3
14
91
BOARD
JlJ2
J3J4JS
HEATSINK
0
PARTS LlS.1
CHlP CAPACITOR. 2.OpF ATC B
CHIP CAPACITOR. 5OOCPF
CHIP CAPAC~OF!. 37pF ATC B
CHIP CAPACITOR. 25OpF ATC B
CHIP CAPACTTOR. .015uF
CHIP CAPACTTOR. 5KvF ATC B
CHIP CAPAClTOR. O.BpF ATC B
ELECTROLtllC CAPACITCR, 5ouF 50 VOLTS
RESISTOR. 27 OHM 25 WA-i-f
RESISTOR 22K OHM 25 WATT
INDUCTOR. 5 TURNS OF NO. 18 AWG ON ‘.lO
INDUCTOR. 10 TURNS OF NC. 22 AWG ON R4
,:, BALUN TRANSFORMER 50 0”M SEMI-RIGID COAX
‘.OBS X 3’ LONG
,:I BALUN TRANSFORMER. 25 C+iM SEMI-RIGID COAX
‘.070’ X 2.5’ LONG
13 BALUN TRANSFORMER. 10 OHM SEMI-RIGIG COAX
‘.070.X 2.5’ LONG
,:, BALUN TRANSFORMER. 50 OHM SEMI-RIGID COAX
‘.OW X 4’ LONG
uF261oov
ROGERS 5870. .Ml’lliICK
CONNECTOR TYPE-N
BANANA JACK
FINNED ALUMINUM, DIN 7305OlB2-03
0
WA-COM, Inc.
Specifications Subject to Change Without Notice.
9-295
Loading...