Page 1
an AMP company
RF MOSFET Power Transistor, lOOW, 28V
100 - 500 MHz UF281 OOM
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices
Absolute Maximum Ratings at 25°C
pi
Power Dissipation
JunctionTemperature
Storage Temperature T
Thermal Resistance El
PD
T,
STG
JO
-55 to +150
Electrical Characteristics at 25°C
I Parameter
Drain-Source Breakdown Voltage
Drain-Source LeakageCurrent
Gate-Source Leakage Current
Gate Threshold Voltage
ForwardTransconductance
input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Return Loss
Load Mismatch Tolerance
* Per Side
( Symbol 1 Min 1 Max 1 Units 1
BVDSS
‘OS5
‘GSS
V
GSCTHI
GM
C
ISS
C
OS.5
C
RSS
%
VSWR-T -
250 W
200
0.7 “Ciw
“C
“C
65 -
2.0
1.5 -
10 50 10 -
I4
&w t.74
II
505
P
V
V,,=O.O V, I,,=150 mA’
3.0 mA v,,=2a.o v. vo,=o.o v
3.0 pA v,,=20 v, v,,=o.o V’
6.0 V V,,=lO.O V, 1,,=300.0 mA‘
135 pF
90 pF
24 pF v,,=2a.ov, F=I .OMHZ*
3O:l -
I
S V,,=lO.O V, 1,,=3000.0 mA, ~v,,=l .O V, 80 ps Pulse’
v,=2a.o v, F=l .o MHz’
V,s=28.0 V, F=l .O MHz’
dB
V,,=28.0 V, 1,,=600.0 mA, P,,=lOO.O W. F=500 MHz
--
%
v,,=%.O V, 1,,=600.0 mA, P,,=lOO.O W, F=500 MHz
dB
V,,=28.0 V, 1,,=600.0 mA, PO,,=1 00.0 W, F=500 MHz
v,,=28.0 V. 1,,=600.0 mA, P,,,.=100.0 W, F=500 MHz
m a¶
a&b,
Test Conditions
.m4 1 ale
am 1 a?4
ooc 1 ace
1
I
Specifications Subject to Change Without Notice.
M/A-COM, inc.
Page 2
RF MOSFET Power Transistor, IOOW, 28V
Typical Broadband Performance Curves
UF281OOM
v2.00
EFFICIENCY vs FREQUENCY
80.
P,=lO W I,,=600 mA (Push-Pull Device)
100 200 300 400 so0 14 16 20 24 28 32
FREQUENCY (MHz)
POWER OUTPUT vs SUPPLY VOLTAGE
P,,,=lO W I,,=600 mA F=500 MHz
loo
80
60
20
t
SUPPLY VOLTAGE (V)
POWER OUTPUT vs POWER INPUT
V,,=28 V I,,=600 mA (Push-Pull Device)
s 80
e
i3 60
fs 5 40
0
20
M/A-COM, Inc.
0
0 1 2 4 6 8 10 12
POWER INPUT(W)
Specifications Subject to Change Without Notice.
Page 3
RF MOSFET Power Transistor, IOOW, 28v
Typical Device Impedance
UF28100M
v2.00
Frequency (MHz)
100
( 300
500 1.5 + j 5.5
Z,, (OHMS)
4.5 - j 6.0
1 2.25 - j 1.75
Z,,,D (OHMS)
14.5+jO.5
1 7.5+j 1.0
3.5 - j 3.5
V,,=28 V, I,=600 mA, P,,,=lOO.O Watts
Z,, is the series equivalent input impedance of the device from gate to gate.
Z LcAD is the pptimum series equivalent load impedance as measured from drain to drain.
RF Test Fixture
I
I
Specifications Subject tD Change !ffiiDut Notice.
Cl .c8
c2m
c4
c.5
c&c7
CS.ClO
Cl1
Cl2
Rl.lU
RR3
Ll
I2
11
72
l3
74
01
BOARD
JlJ2
J3.JdJ5
HEATSMK
PARTS LIST
CHIP CAPACITOR. 2.OpF ATC B
CHIP CAPACITOR. EOXPF
CHIP CAPACTTOR. S7pF ATC B
CHIP CAPACITOR. 2WpF ATC B
CHIP CAPACXTOR. .OlSuF
CHIP CAPACTOR. 5BOpF ATC B
CHIP CAPACITOR. O.BpF ATC 8
ELECTROLYI-IC CAPACTTOR. SOuF 54 VOLTS
RESISTOR. 27 OHM 25 WAH
RBSI.TOR. 22K OHM 25 WATT
INDUCTOR. S TURNS OF NO. 18 AWG ON ‘.lO
INDUCTOR. 1ONRNS OF NO. 27 AWG ON R4
,:l BALUN TRANSFORMER 50 OIIM SEMI-RIGID WAX
‘.cesX3-LONG
61 BALUN TRANSFORMER. 25 OHM SEMI-RIGID COAX
‘370’ X 2.3 LONG
1:s BALUN TR*NsFoRMER 10 OHM SEMI-RIGIG COAX
‘370 X 25’ LONG
1:l BALUN TRAMFORMER. 50 OHM SEMI-RIGID COAX
‘.oBs x 4. LONG
uF2s1ooM
ROGERS 5870. .m?’ THICK
CONNECIOR. TYPE ‘N
BANANAJACK
FINNED ALUMINUM. DiN 73XD1B2-03
M/A-COM, Inc.
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