Page 1
an AMP company
RF MOSFET Power Transistor, 5W, 28V
100 - 500 MHz
Features
l N-Channel Enhancement Mode Device
l DUOS Structure
l Lower Capacitances for Broadband Operation
0 Common Source Configuration
l Lower Noise Floor
l 100 MHz to 500 MHz Operation
.* 9
Absolute Maximum Ratings at 25°C
B
UF2805B
v2.00
A
E
Electrical
Characteristics at 25°C
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RF MOSFET Power Transistor, 5W, 28V UF2805B
v2.00
Typical Broadband Performance Curves
7
xi=
CAPACITANCES vs VOLTAGE
F=l .O MHz
a7
5
10 15
v,, (W
20 25
30
5 10
GAIN vs FREQUENCY
V,,=28 V Po,+O W I,,=50 mA
POWER OUTPUT vs VOLTAGE
P,,=O.3 W I,,=50 mA F&O0 MHz
15 20
v,, (V)
25 30 35
EFFICIENCY vs FREQUENCY
V,,=28 V I,,=50 mA P,,=5.0 W
1
100 200
FREQUENCY (MHz)
w
0
ii :: 50 -
500
POWER OUTPUT vs POWER INPUT
7
Y
0.025 0.05
V,,=28 V I,,=50 mA
0.1 0.15
POWER INPUT(W)
loo 200
0.2 0.25
300
FREQUENCY (MHz)
0.3
400 500
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RF MOSFET Power Transistor, 5W, 28V
Typical Device impedance
U F2805B
Frequency (MHz)
100
300
500
z;, (OHMS)
15.0 - j 80.0
8.0 - j 43.0
4.0 - j 29.0
Z
LOAD (OHMS)
35.0
29.0
28.0
v,,=28 V, I,=50 mA, PouT=5.0 Watts
Z,, is the series equivalent input impedance of the device from gate to source.
Z LoAD i&the optimum series equivalent load impedance as measured from drain to drain.
RF Test Fixture
+ j
+ j
+ j
55.0
40.0
29.0
d
C8
c9
c4, to, 11
c2
c3
CS
CQ 7, 13, 16
CL 12
Cl5
Cl4
Rl
Pi
Ll
L2
L3
L4
L5
Lb
L7
PARTS
l.opf
3.9pf
4.7pf
S&f
8.m
1Spf
68Dpf
82Opf
.Oluf
souf sov.
10K OHM
UF2805B
9 TURNS OF ND. 24 A’JG
7 TURNS OF NO. 22 AVG
3 TURNS OF No. 24 AWG DN FERRITE BEhD
L30’ Df 50 OHM TRANSMISSION LINE
.7U’ DF SO OHM TRANSHISSIlYN LINE
.2p OF SO OHM TRAN!ZMISSION LINE
1.85’ OF 50 OHM TRANSMISSION LINE
LIST
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