This full-bridge power amplifier is rated for continuous output current of 0.8 Amperes and is intended for use in demanding servo applications such as head
positioning for high-d ensi ty disk drives. The device includes a precision current
sense amplifier that provides accurate control of load current. Current is
sensed with a single resi s tor in seri es with the load. The power amplifier has a
very low output saturation voltage and will operate down to 4V supply levels.
Power output stage protection includes current l imiting and thermal shutdown.
Auxiliary functions on this device include a dual-input under-voltage comparator, which can monitor two independent supply voltages and force a built-in
head park function when either is below minimum. When activated by either the
UV comparator, or a command at the separate PARK input, the park circuitry
will override the amplifier i nputs to convert the power outputs to a programmable constant voltage source which will h old regula tion as th e supply voltage
falls to below 3.0 Volts. Added features include a POWER OK flag output, a
LIMIT input to force the drive output to its maximum level in either polarity, and
a over-riding INHIBIT input to disable al l amplifiers and reduce quiescent supply current.
BLOCK DIAGRAM
This device is packaged in a power PLCC surface mount configuration which
maintains a standard 28-pin outline, but with 7 pins along one edge allocated to
ground for optimum thermal transfer. And is also available in a 24-pin surface
mount SOIC package.
Note: Pin numbers refer to PLCC packag e.
10/94
UDG-92054-1
Page 2
ABSOLUTE MAXIMUM RATINGS
Note 1: Unless other w ise indicat ed, volt age s are
reference d to grou nd and current s are pos itive
into, negat ive out of, the sp ecif ied te rminals.
"Pulsed" is defined as a less than 10% duty cycle
pulse with a maximum dur ation of 500µs.
Note 2: See Unitrode Int egr at ed Circ uits databoo k
for informat ion re gar ding ther ma l specif icat io ns
and limitat io ns of pack ages .
Unless otherwise stated spec ifications apply for 0°C ≤ TA ≤ 70°C, +VIN = 12V, +VC
= +VIN, A+/REF Inp ut = 6V. TA=TJ.
IN Supply CurrentAll Amplifier Outpu ts = 6V3542mA
+V
C Supply CurrentIOUT = 0A1mA
+V
IN UVLO ThresholdLow to High2.83. 0V
UVLO Threshold Hysteresis200mV
2
Page 3
UC3175B
ELECTRICAL
CHARACTERISTICS (cont.)
Unless other wise stat ed sp ecif ic atio ns app ly for 0°C ≤ TA ≤ 70°C, +VIN = 12V, + V C = +VIN,
A+/REF INPUT = 6V. T
A=TJ.
PARAMETERTEST CONDITION SMINTYPMAX UNITS
UNDER VOLTAGE (UV) COM PARATO R
Input Bias Current-1.5-0.5µA
UV ThresholdsLow to High, Other Input = 5V1.481.501.52V
UV Threshold Hyst eresis152540mV
Pwr OK V
Pwr OK LeakageV
SATIOUT = 5mA0.45V
OUT = 20V5µA
POWER AMPLI FI ERS A and B
Input Offset VoltageV
CM = 6V, A Amplifie r8mV
B Amplifier12mV
Input Off set DriftNo te 1, A Amp lifier On ly25µV/°C
Input Bias CurrentV
Input Offset CurrentV
Input Bias Cu rrent at A+/Ref Input(A+/Ref–C/S+)/12k, T
CMRR1V ≤ V
PSRR+V
Large Signal Volta ge G ai nV
CM = 6V, except A+ /REF Input-500-150nA
CM = 6V, B Amplifie r Only200nA
J = 25°C6084105 µA/V
CM≤ 10V7090dB
IN = 4V to 15V, VCM = 1.5V7090dB
OUT = 1V, Sinking 500mA to VOUT = 11V,
Sourcin g 500m A3.015.0V/mV
Slew Rate1 to 13V, 13 to 1V, T
J = 25°C12.1V/µs
Unity Gain Bandwidt hNote 1, A Amplifier2MHz
Note 1, B Am p l ifi er1MHz
High-Side Current Limit0.81.0A
Output Saturation VoltageHigh-Side, I
High-Side, I
Low-Side, I
SOURCE = 250mA0.7V
SOURCE = 800mA0.85V
SINK = 250mA0. 3V
Low-Side, ISINK = 800m A0.4V
Total, I
OUT = 250mA1.01.2V
Total, I
OUT = 800mA1.251.6V
High Side Diode V
Low Side Diode V
FID = 800mA, Inhibit Ac tivated1.0V
FID = 800mA, Inhibit Ac tiva ted1.0V
CURRENT SENSE AMPLIFIER
Input Offset VoltageV
Input Offset Change with Common Mode0V ≤ V
CM = 6V2.0mV
CM≤ 12V
Input1500µV/V
Input Offset DriftNote 18µV/°C
Voltage Gain-1.0V ≤ V
Output Satu ration Volt ageLow-Side, I
High-Side, I
Maximum A+/ Ref InputVo lts Below + V
10mA Output Current, +V
DIFF≤ +1. 0V, VCM = 6V1.952.002.05V
SINK = 1.5mA0.30.5V
SOURCE = 1.5mA0.40.7V
IN, C/S+ & C/S- = BOUTPUT Max @
IN = 4.5V, C/S VIO ≤ 5mV2.63.0V
PARKING FUNCTION
Park Input Threshold0.71.11.7V
Park Input CurrentPark Input = 1.7V60100µA
Park Drive Satura tion Voltag e, PD
Parking Drive LeakageV
VSATISINK = 100mA0.30.5 V
OUT = 20V100µA
Amplifier A Aux Input Bias Current-500- 150nA
3
Page 4
UC3175B
ELECTRICAL
CHARACTERISTICS (cont.)
PARAMETERTEST CONDITION SMINTYPMAX UNITS
PARKING FUNCTIONS (cont .)
Amplifier A Satura tion Voltag e, A
Regulating Volt age at Park Volts1.471.501.53V
Minimum Parking Supply VoltageA
AUXILIARY FUNCTIONS
Limit Input Low VoltageA Output Forced Low0.70.8V
Limit Input High VoltageA O utpu t Forced H igh2.22.3V
Limi t Inactive1.21.8V
Limit Open Circuit Voltage1.451.501.55V
Limit Input Resistance1.2V ≤ Limit Input ≤ 1.8V10kΩ
Inhibit Input Threshol d0.71.11.7V
Inhibit Input CurrentI n hibit Input = 1. 7 V400700µA
Supply Curren t whe n Inhibite dThe sum of +V
Thermal Shutdown Tempe ratur e165°C
Unless other wise stat ed sp ecif ic atio ns app ly for 0°C ≤ TA ≤ 70°C, +VIN = 12V, + V C = +VIN,
A+/REF Input = 6V. T
HVSATISOURCE = 50mA, +V IN = 3V 0.650.8V
HVSAT + PDVSAT≤ 1.3V @ 50mA1.7 1.9V
A=TJ.
IN and +VC current s26mA
Note 1: This specifica tion not teste d in prod uct ion.
UC3175B Series Current Sensing
UDG-92058
G
I
L
O
=
=
V
S
Rfa
Rfb
• 2 •
R
S
4
Page 5
Parking Function
UC3175B
Notes: Parking voltage
RP is optional for current limiting.
Inhibit and Park Input s are active high.
Pwr OK is low on power failure.
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In order to minimize risks associated with the customer’s applications, adequate design and operating
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Copyright 1999, Texas Instruments Incorporated
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