Datasheet SST5546NL, SST5547NL, U5545NL, U5546NL, U5547NL Datasheet (Vishay) [ru]

SST/U5545NL Series

New Product

Vishay Siliconix

Monolithic N-Channel JFET Duals

PRODUCT SUMMARY

Part Number V

U5545NL -0.5 to -4.5 -50 1.5 -50 5
SST/U5546NL -0.5 to -4.5 -50 1.5 -50 10
SST/U5547NL -0.5 to -4.5 -50 1.5 -50 15

FEATURES BENEFITS APPLICATIONS

D Anti Latchup Capability
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 3 pA
D Low Noise
D High CMRR: 100 dB

GS(off)

(V) V

(BR)GSS

Min (V) gfs Min (mS) IG Max (pA) jV

D External Substrate Bias—Avoids Latchup
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time

Accuracy

D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal

GS1

- V

j Max (mV)

GS2

D Wideband Differential Amps
D High-Speed, Temp-Compensated,

Single-Ended Input Amps

D High-Speed Comparators
D Impedance Converters

DESCRIPTION

The SST/U5545NL Series are monolithic dual n-channel
JFETs designed to provide high input impedance (I
for general purpose differential amplifiers. The U5545NL
features minimum system error and calibration (5-mV offset
maximum).

Pins 4 and 8 on the SST series and pin 4 on the U series part
numbers enable the substrate to be connected to a positive,
external bias (VDD) to avoid latchup.

Narrow Body SOIC

S

1

1

D

2

1

G

3

1

SUBSTRATE S

4

Top View

Marking Codes:

SST5546NL - (5546NL)
SST5547NL - (5547NL)

8
7
6
5

SUBSTRATE
G

2

D

2

2

< 50 pA)

G

The SST5546NL/47NL in the SO-8 package provide ease of
manufacturing. The symmetrical pinout prevents improper
orientation. These part number are available with
tape-and-reel options for compatibility with automatic
assembly methods.

The hermetically sealed TO-78 package is available with full
military processing.

TO-78

S

1

1

D

1

2

3

G

1

4

CASE, SUBSTRATE
Top View
U5545NL
U5546NL
U5547NL

G

2

7

D

2

6

5

S

2

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage -50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate Current 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Temperature (

Storage Temperature -65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature -55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .

Document Number: 72119
S-03162—Rev. A, 14-Feb-03

1

/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .

Power Dissipation : Per Side

Notes
a. Derate 2 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C

Total

b

a

250 mW. . . . . . . . . . . . . . . . . . . . . . . .

500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .

www.vishay.com

7-1

SST/U5545NL Series

9
3

VDS = 15 V, VGS = 0 V

VDS = 15 V, VGS = 0 V

Differential

|

|

Vishay Siliconix

New Product

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit

Static

Gate-Source
Breakdown Voltage

Gate-Source
Cutoff Voltage

Saturation Drain Current

Gate Reverse Current I

Gate Operating Current I
Gate-Source

Forward Voltage

b

Dynamic

Common-Source Forward
Transconductance

Common-Source
Output Conductance

Common-Source
Input Capacitance

Common-Source Reverse
Transfer Capacitance

Equivalent Input
Noise Voltage

Noise Figure NF

b

b

Matching

Differential
Gate-Source Voltage

Gate-Source Voltage
Differential Change
with Temperature

Saturation Drain
Current Ratio

Transconductance Ratio

c

c

V

V

V

GS1

|

D

V

GS1–VGS2

(BR)GSS

GS(off)

I

DSS

GSS

G

V

GS(F)

g

fs

g

os

C

iss

C

rss

e

n

* V

DT

I

DSS1

I

DSS2

g

fs1

g

fs2

GS2

IG = -1 mA, VDS = 0 V

VDS = 15 V, ID = 0.5 nA -2 -0.5 -4.5 -0.5 -4.5 -0.5 -4.5

VDS = 15 V, VGS = 0 V 3 0.5 8 0.5 8 0.5 8 mA

VGS = -30 V, VDS = 0 V -10 -100 -100 -100 pA

TA = 150_C

VDG = 15 V, ID = 200 mA

IG = 1 mA , VDS = 0 V 0.7 V

VDS = 15 V, VGS = 0 V

f = 1 kHz

VDS = 15 V, VGS = 0 V

f = 1 MHz

VDS = 15 V, ID = 200 mA

f = 10 Hz

RG = 1 MW

VDG = 15 V, ID = 50 mA

VDG = 15 V, ID = 200 mA

|

VDG = 15 V, ID = 200 mA

T

= -55 to 125_C

A

VDS = 15 V, VGS = 0 V 0.98c0.95 1 0.9 1 0.9 1

VDS = 15 V, ID = 200 mA

f = 1 kHz

-57 -50 -50 -50

-20 -150 -150 -150 nA

-3 -50 -50 -50 pA

2.5 1.5 6.0 1.5 6.0 1.5 6.0 mS

2 25 25 25

3.5 6 6 6

1.3 2 2 2

20 180

0.1 3.5 dB

0.99c0.97 1 0.95 1 0.9 1

Limits

U5545NL SST/U5546NL SST/U5547NL

5 10 15
5 10 15

10 20 40

V

mS

pF

nV⁄

√Hz

mV

mV/

_C

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NQP
b. Pulse test: PW v300 ms duty cycle v3%.
c. Assumes smaller value in the numerator.

Document Number: 7211

www.vishay.com

7-2

S-03162—Rev. A, 14-Feb-0

SST/U5545NL Series

New Product

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance

vs. Gate-Source Cutoff Voltage

5

4

g

fs

3

2

- Saturation Drain Current (mA)
1

DSS

I

I

DSS

g

fs

f = 1 kHz

0

0-5-4-3-2-1

V

- Gate-Source Cutoff Voltage (V) VDG - Drain-Gate Voltage (V)

GS(off)

Output Characteristics Output Characteristics

5

V

= -2 V

GS(off)

4

I

DSS

@ VDS = 15 V, VGS = 0 V

@ VDG = 15 V, VGS = 0 V

3

g

fs

- Forward Transconductance (mS)

2.6

2.2

1.8

1.4

1

100 nA

10 nA

1 nA

100 pA

- Gate Leakage

G

I

10 pA

1 pA

0.1 pA
0302010 40 50

5

4

TA = 25_C

Gate Leakage Current

TA = 125_C

I

@ 125_C

GSS

200 mA

V

= -3 V

GS(off)

Vishay Siliconix

IG @ ID = 200 mA

50 mA

50 mA

I

@ 25_C

GSS

VGS = 0 V

-0.3 V

3

VGS = 0 V

-0.2 V

2

- Drain Current (mA)I

D

I

1

-0.4 V

-0.6 V

-1.0 V

-0.8 V

- Drain Current (mA)

D

I

-1.2 V

0

-1.4 V

012168420

VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V)

Output Characteristics Output Characteristics

2

V

= -2 V

GS(off)

1.6

VGS = 0 V

1.2

0.8

- Drain Current (mA)

D

0.4

0

0 0.6 0.80.40.2 1

VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V)

-0.2 V

-0.4 V

-0.6 V

-0.8 V

-1.0 V

-1.2 V

-1.4 V

-1.6 V

2.5

2.0

1.5

1.0

- Drain Current (mA)

D

I

0.5

-0.6 V

3

-0.9 V

2

-1.2 V

-1.5 V

1

-1.8 V

-2.1 V

0

-2.4 V

012168420

V

GS(off)

= -3 V

VGS = 0 V

-0.3 V

-0.6 V

-0.9 V

-1.2 V

-1.5 V

-1.8 V

-2.1 V

-2.4 V

0

0 0.6 0.80.40.2 1

Document Number: 72119
S-03162—Rev. A, 14-Feb-03

www.vishay.com

7-3

SST/U5545NL Series

9
3

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Gate-Source Differential Voltage

VDG = 15 V
T

= 25_C

A

0.01 0.1 1

Common Mode Rejection Ratio

CMRR = 20 log

DVDG = 10 - 20 V

5 - 10 V

5

V

4

3

2

- Drain Current (mA)

D

I

125_C

1

0

0 -1.5-1.0-0.5 -2.0 -2.5

100

V/ _C

m

()

GS2

10

V

-

t

D

GS1

V

D

Transfer Characteristics

100

= -2 V

GS(off)

TA = -55_C

25_C

VGS - Gate-Source Voltage (V) ID - Drain Current (mA)

VDS = 10 V

(mV)

GS2

V

-

GS1

V

10

1

Voltage Differential with Temperature

vs. Drain Current

130

VDG = 15 V
DT

= 25 to 125_C

A

DT

= -55 to 25_C

A

SST/U5547NL

U5545NL

120

110

CMRR (dB)

100

90

vs. Drain Current

SST/U5547NL

U5545NL

vs. Drain Current

DV

DG

D

V

-

GS1 VGS2

1

0.01 0.1 1

100

80

60

40

- Voltage Gain

V

A

20

0

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7-4

ID - Drain Current (mA) ID - Drain Current (mA)

Circuit Voltage Gain vs. Drain Current

V

= -3 V

GS(off)

V

GS(off)

g

+

V

L

1 ) RLg

10 V

+

I

fsRL

os

D

0.1 10.01

I

- Drain Current (mA)

D

A

Assume VDD = 15 V, VDS = 5 V

R

= -2 V

80

0.01 0.1 1

On-Resistance vs. Drain Current

V

= -2 V

GS(off)

V

0.01 0.1 1
ID - Drain Current (mA)

Document Number: 7211

S-03162—Rev. A, 14-Feb-0

- Drain-Source On-Resistance ( Ω )

DS(on)

r

1 k

800

600

400

200

0

GS(off)

= -3 V

SST/U5545NL Series

New Product

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Common-Source Input Capacitance

10

8

6

4

- Input Capacitance (pF)C
iss

2

0

0 -12 -16 -20-8-4

Equivalent Input Noise Voltage vs. Frequency

20

16

vs. Gate-Source Voltage

f = 1 MHz

VDS = 0 V

5 V

15 V

- Gate-Source Voltage (V)

V

GS

- Reverse Feedback Capacitance (pF)C
rss

2.5

VDS = 10 V

2.0

Common-Source Reverse Feedback

Capacitance vs. Gate-Source Voltage

5

f = 1 MHz

4

VDS = 0 V

3

5 V

2

1

0

15 V

0 -12 -20-16-8-4

VGS - Gate-Source Voltage (V)

Output Conductance vs. Drain Current

V

= -2 V VDS = 15 V

GS(off)

Vishay Siliconix

f = 1 kHz

ID @ 200 mA

12

8

en - Noise Voltage nV / Hz

4

0

10 100 1 k 100 k10 k

VGS = 0 V

f - Frequency (Hz)

Common-Source Forward Transconductance

2.5
V

GS(off)

2.0

1.5

1.0

0.5

- Forward Transconductance (mS)

fs

g

0

0.01 0.1 1

vs. Drain Current

= -2 V VDS = 15 V

TA = -55_C

25_C

125_C

ID - Drain Current (mA)

f = 1 kHz

1.5

1.0

- Output Conductance (µS)

0.5

os

g

0

0.01 0.1 1
ID - Drain Current (mA)

TA = -55_C

25_C

125_C

On-Resistance and Output Conductance

vs. Gate-Source Cutoff Voltage

rDS @ ID = 100 mA, VGS = 0 V

@ VDS = 15 V, VGS = 0 V, f = 1 kHz

g

os

0

V

- Gate-Source Cutoff Voltage (V)

GS(off)

g

os

r

DS

-3 -5-4-2-1

- Drain-Source On-Resistance ( Ω )

DS(on)

r

1 k

800

600

400

200

0

10

8

os

- Output Conductance ( m

6

4

S)g

2

0

Document Number: 72119
S-03162—Rev. A, 14-Feb-03

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7-5