Page 1
Silicon Epitaxial Planar Z–Diodes
Features
D
Very sharp reverse characteristic
D
Low reverse current level
D
Available with tighter tolerances
D
Very high stability
D
Low noise
Applications
Voltage stabilization
TZQ5221B...TZQ5267B
Vishay Telefunken
96 12009
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Power dissipation R
Z–current I
Junction temperature T
Storage temperature range T
x
300K/W P
thJA
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mmx50mmx1.6mm R
thJA
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=200mA V
F
Z
stg
V
j
500 mW
PV/V
Z
175
–65...+175
500 K/W
1.5 V
mA
°
C
°
C
Document Number 85612
Rev. 3, 01-Apr-99 1 (6)
www.vishay.de • FaxBack +1-408-970-5600
Page 2
TZQ5221B...TZQ5267B
Vishay Telefunken
Type
TZQ5221B 2.4 20 < 30 < 1200 0.25 < 100 1.0 < –0.085
TZQ5222B 2.5 20 < 30 < 1250 0.25 < 100 1.0 < –0.085
TZQ5223B 2.7 20 < 30 < 1300 0.25 < 75 1.0 < –0.080
TZQ5224B 2.8 20 < 30 < 1400 0.25 < 75 1.0 < –0.080
TZQ5225B 3.0 20 < 29 < 1600 0.25 < 50 1.0 < –0.075
TZQ5226B 3.3 20 < 28 < 1600 0.25 < 25 1.0 < –0.070
TZQ5227B 3.6 20 < 24 < 1700 0.25 < 15 1.0 < –0.065
TZQ5228B 3.9 20 < 23 < 1900 0.25 < 10 1.0 < –0.060
TZQ5229B 4.3 20 < 22 < 2000 0.25 < 5 1.0 < ±0.055
TZQ5230B 4.7 20 < 19 < 1900 0.25 < 5 2.0 < ±0.030
TZQ5231B 5.1 20 < 17 < 1600 0.25 < 5 2.0 < ±0.030
TZQ5232B 5.6 20 < 11 < 1600 0.25 < 5 3.0 < +0.038
TZQ5233B 6.0 20 < 7 < 1600 0.25 < 5 3.5 < +0.038
TZQ5234B 6.2 20 < 7 < 1000 0.25 < 5 4.0 < +0.045
TZQ5235B 6.8 20 < 5 < 750 0.25 < 3 5.0 < +0.050
TZQ5236B 7.5 20 < 6 < 500 0.25 < 3 6.0 < +0.058
TZQ5237B 8.2 20 < 8 < 500 0.25 < 3 6.5 < +0.062
TZQ5238B 8.7 20 < 8 < 600 0.25 < 3 6.5 < +0.065
TZQ5239B 9.1 20 < 10 < 600 0.25 < 3 7.0 < +0.068
TZQ5240B 10 20 < 17 < 600 0.25 < 3 8.0 < +0.075
TZQ5241B 11 20 < 22 < 600 0.25 < 2 8.4 < +0.076
TZQ5242B 12 20 < 30 < 600 0.25 < 1 9.1 < +0.077
TZQ5243B 13 9.5 < 13 < 600 0.25 < 0.5 9.9 < +0.079
TZQ5244B 14 9.0 < 15 < 600 0.25 < 0.1 10 < +0.082
TZQ5245B 15 8.5 < 16 < 600 0.25 < 0.1 11 < +0.082
TZQ5246B 16 7.8 < 17 < 600 0.25 < 0.1 12 < +0.083
TZQ5247B 17 7.4 < 19 < 600 0.25 < 0.1 13 < +0.084
TZQ5248B 18 7.0 < 21 < 600 0.25 < 0.1 14 < +0.085
TZQ5249B 19 6.6 < 23 < 600 0.25 < 0.1 14 < +0.086
TZQ5250B 20 6.2 < 25 < 600 0.25 < 0.1 15 < +0.086
TZQ5251B 22 5.6 < 29 < 600 0.25 < 0.1 17 < +0.087
TZQ5252B 24 5.2 < 33 < 600 0.25 < 0.1 18 < +0.088
TZQ5253B 25 5.0 < 35 < 600 0.25 < 0.1 19 < +0.089
TZQ5254B 27 4.6 < 41 < 600 0.25 < 0.1 21 < +0.090
TZQ5255B 28 4.5 < 44 < 600 0.25 < 0.1 21 < +0.091
TZQ5256B 30 4.2 < 49 < 600 0.25 < 0.1 23 < +0.091
TZQ5257B 33 3.8 < 58 < 700 0.25 < 0.1 25 < +0.092
TZQ5258B 36 3.4 < 70 < 700 0.25 < 0.1 27 < +0.093
TZQ5259B 39 3.2 < 80 < 800 0.25 < 0.1 30 < +0.094
TZQ5260B 43 3.0 < 93 < 900 0.25 < 0.1 33 < +0.095
TZQ5261B 47 2.7 < 105 < 1000 0.25 < 0.1 36 < +0.095
TZQ5262B 51 2.5 < 125 < 1100 0.25 < 0.1 39 < +0.096
TZQ5263B 56 2.2 < 150 < 1300 0.25 < 0.1 43 < +0.096
TZQ5264B 60 2.1 < 170 < 1400 0.25 < 0.1 46 < +0.097
TZQ5265B 62 2.0 < 185 < 1400 0.25 < 0.1 47 < +0.097
TZQ5266B 68 1.8 < 230 < 1600 0.25 < 0.1 52 < +0.097
TZQ5267B 75 1.7 < 270 < 1700 0.25 < 0.1 56 < +0.098
1.)Based on dc measurement at thermal equilibrium; case temperature maintained at 30°C ± 2°C.
1)
V
Znom
V mA
IZT for r
zjT
W W
r
zjk
at I
ZK
mA
IR at V
R
m
A V %/K
TK
VZ
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Rev. 3, 01-Apr-992 (6)
Page 3
TZQ5221B...TZQ5267B
)
Characteristics (Tj = 25_C unless otherwise specified)
Vishay Telefunken
tot
P – Total Power Dissipation ( mW )
95 9602
Z
V – Voltage Change ( mV )
D
600
500
400
300
200
100
0
0 40 80 120 160
T
– Ambient Temperature ( °C )
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
1000
Tj=25°C
100
IZ=5mA
10
200
15
–4
Z
10
5
IZ=5mA
0
VZ
–5
TK – Temperature Coefficient of V ( 10 /K
0102030
95 9600
VZ – Z-Voltage ( V )
Figure 4. Temperature Coefficient of Vz vs.
Z–Voltage
200
150
VR=2V
100
50
D
C – Diode Capacitance ( pF )
Tj=25°C
40
50
1
25
95 9598
0 5 10 15 20
VZ – Z-Voltage ( V )
Figure 2. Typical Change of Working Voltage under
Operating Conditions at T
1.3
V
Ztn=VZt/VZ
1.2
1.1
1.0
Ztn
0.9
V – Relative Voltage Change
0.8
–60 0 60 120 180
95 9599
(25°C)
TKVZ=10 10–4/K
Tj – Junction Temperature ( °C )
amb
=25°C
8 10
6 10–4/K
4 10–4/K
2 10
0
–2 10
–4 10–4/K
–4
/K
–4
/K
–4
/K
240
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
95 9601
F
I – Forward Current ( mA )
95 9605
0
0 5 10 15
VZ – Z-Voltage ( V )
Figure 5. Diode Capacitance vs.
Z–Voltage
100
10
Tj=25°C
1
0.1
0.01
0.001
0 0.2 0.4 0.6 0.8
VF – Forward Voltage ( V )
Figure 6. Forward Current vs.
Forward Voltage
20
25
1.0
Document Number 85612
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Rev. 3, 01-Apr-99 3 (6)
Page 4
TZQ5221B...TZQ5267B
Vishay Telefunken
Z
I – Z-Current ( mA )
95 9604
Z
I – Z-Current ( mA )
100
80
P
tot
T
amb
60
40
20
0
04 81216
VZ – Z-Voltage ( V )
Figure 7. Z–Current vs. Z–Voltage
50
P
=500mW
40
30
20
10
tot
T
=25°C
amb
=500mW
=25°C
1000
W
IZ=1mA
100
5mA
10mA
10
Z
r – Differential Z-Resistance ( )
20
95 9606
0 5 10 15 20
VZ – Z-Voltage ( V )
1
Tj=25°C
25
Figure 9. Differential Z–Resistance vs. Z–Voltage
0
15 20 25 30
95 9607
VZ – Z-Voltage ( V )
Figure 8. Z–Current vs. Z–Voltage
1000
tp/T=0.5
100
tp/T=0.2
10
tp/T=0.1
tp/T=0.02
tp/T=0.05
1
thp
Z – Thermal Resistance for Pulse Cond. (K/W)
–1
10
Figure 10. Thermal Response
10
0
tp/T=0.01
35
Single Pulse
1
10
iZM=(–VZ+(V
2
+4rzjDT/Z
Z
R
=300K/W
thJA
D
T=T
jmax–Tamb
1/2
)
)/(2rzj)
thp
2
10
tp – Pulse Length ( ms )95 9603
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Rev. 3, 01-Apr-994 (6)
Page 5
Dimensions in mm
TZQ5221B...TZQ5267B
Vishay Telefunken
96 12071
Document Number 85612
Rev. 3, 01-Apr-99 5 (6)
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Page 6
TZQ5221B...TZQ5267B
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Rev. 3, 01-Apr-996 (6)
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