Datasheet TXDV812, TXDV612, TXDV412 Datasheet (SGS Thomson Microelectronics)

FEATURES

.VERY HIGH COMMUTATION : > 42.5 A/ms

(400Hz)

.INSULATING VOLT AG E = 2500 V

(UL RECOGNIZE D : E 81734)

(RMS)

.dV/dt : 500 V/µs min

TXDV 412 ---> 812

ALTERNISTORS

Non

A1

A2

G

TO220AB

(Plastic)

20 A/µs

100

- 40 to + 125

DESCRIPTION

The TXDV 412 ---> 812 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur­rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)

ABSOLUTE RATINGS (limiting val ues )

Symbol Parameter Value Unit

I

T(RMS)

I

TSM

I2tI

dI/dt Critical rate of rise of on-state current

Tstg

Tj

RMS on-state current
(360° conduction angle)

Non repetitive surge peak on-state current
( Tj initial = 25°C )

2

t value tp = 10 ms 72 A2s

Gate supply : IG = 500mA diG/dt = 1A/µs

Storage and operating junction temperature range - 40 to + 150

Tc = 90 °C12 A

tp = 2.5 ms 170 A
tp = 8.3 ms 125

tp = 10 ms 120

Repetitive
F = 50 Hz

Repetitive

°C
°C

Tl Maximum lead temperature for soldering during 10 s at 4.5 mm

from case

Symbol

V

DRM

V

RRM

March 1995

Parameter

Repetitive peak off-state voltage
Tj = 125 °C

260 °C

TXDV Unit

412 612 812

400 600 800 V

1/5

TXDV 412 - --> 812

THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth (j-a) Junction to ambient 60 °C/W

Rth (j-c) DC Junction to case for DC 2.5 °C/W

Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) 1.9 °C/W

GATE CHARACTERISTICS (maximum values)

P

ELECTRICAL CHARACTERISTICS

= 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs).

G (AV)

Symbol Test Conditions Quadrant Value Unit

I

GT

V

GT

V

GD

tgt VD=V

I

L

IH * IT= 500mA gate open Tj=25°C MAX 100 mA

VTM *ITM= 17A tp= 380µs Tj=25°C MAX 1.95 V

I

DRM

I

RRM

dV/dt * Linear slope up to VD=67%V

(dI/dt)c * (dV/dt)c = 200V/µs Tj=110°C MIN 10 A/ms

* For either polarity of electrode A2 voltage with reference to e lectrode A1.

VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 100 mA
VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 1.5 V
VD=V

dIG/dt = 3A/µs
IG=1.2 I

V

DRM

V

RRM

gate open

(dV/dt)c = 10V/µs42.5

RL=3.3kΩ Tj=110°C I-II-III MIN 0.2 V

DRM

IG = 500mA

DRM

GT

Rated
Rated

DRM

Tj=25°C I-II-III TYP 2.5 µs

Tj=25°C I-III TYP 100 mA

II 200

Tj=25°C MAX 0.01 mA
Tj=110°C MAX 2
Tj=110°C MIN 500 V/µs

2/5

TXDV 412 - --> 812

Fig.1 : Maximum RMS power dissipation versus RMS

on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)

P(W)

20
18
16
14
12
10

8
6

180

=30

O

=60

o

=90

o

=120

o

=180

o

o

4
2
0

0123456789101112

I(A)

T(RMS)

Fig.3 : RMS on-state current versus case temperature.

I(A)

T(RMS)

14

Fig.2 : Correlation between maximum RMS power

dissipation and maximum allowable temperatures (T

and T

) for different thermal resistances heatsink +

case

amb

contact.

o

P(W)

20
18
16
14
12
10

8
6

Tca se ( C)

o

Rth = 0 C/W

o

1C/W

o

2C/W

o

4C/W

-90

-95

-100

-105

-110

-115

4
2
0

0 20 40 60 80 100 120 140

o

Tamb(C)

-120

-125

Fig.4 : Relative variation of thermal impedance versus

pulse duration.

Zth/Rth

1

12

10

8

6

=180

o

4

2

0

0 102030405060708090100110120130

o

Tcase( C)

Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.

Zth(j-c)

0.1

0.01
1E-3 1E-2 1E-1 1E + 0 1 E + 1 1E+ 2 5 E+ 2

Zth(j-a)

tp(s)

Fig.6 : Non Repetitive surge peak on-state current
versus number of cycles.

3/5

375

TXDV 412 - --> 812

Fig.7 : Non repetitive surge peak on-state current for a

sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.

Fig.9 : Safe operating area.

Fig.8 : On-state characteristics (maximum values).

4/5

376

PACKAGE MECHANICAL DATA
TO220AB Plastic

A

I

O

P

N

==

Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.

G

D

F

B

C

J

H

L

M

TXDV 412 - --> 812

REF. DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 10.20 10.50 0.401 0.413
B 14.23 15.87 0.560 0.625
C 12.70 14.70 0.500 0.579
D 5.85 6.85 0.230 0.270
F 4.50 0.178
G 2.54 3.00 0.100 0.119
H 4.48 4.82 0.176 0.190

I 3.55 4.00 0.140 0.158

J 1.15 1.39 0.045 0.055
L 0.35 0.65 0.013 0.026
M 2.10 2.70 0.082 0.107
N 4.58 5.58 0.18 0.22
O 0.80 1.20 0.031 0.048
P 0.64 0.96 0.025 0.038

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is grante d by implication or othe rwise under any patent or p atent rights of SGS-THOMSON Microe lectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.

© 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.

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