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APPLICATIONS
■ Induction Heating
■ A.C. Motor Drives
■ Snubber Diode
■ Welding
■ High Frequency Rectification
■ UPS
FEATURES
■ Thermal Fatigue Free Pressure Contact
■ High Surge Capability
■ Low Recovery Charge
VOLTAGE RATINGS
KEY PARAMETERS
V
RRM
2500V
I
F(AV)
200A
I
FSM
3500A
Q
r
240µC
t
rr
2.0µs
2500
2400
2200
2000
TV18 25F M or K
TV18 24F M or K
TV18 22F M or K
TV18 20F M or K
Conditions
V
RSM
= V
RRM
+ 100V
For 3/4" 16 UNF thread, add suffix K, e.g. TV18 25FK.
For M16 thread, add suffix M, e.g. TV18 25FM.
For stud anode add 'R' to type number, e.g. TV18 25FMR.
Type Number Repetitive Peak
Reverse Voltage
V
RRM
V
Outline type codes: DO9.
See Package Details for further information.
CURRENT RATINGS
Symbol Parameter Conditions UnitsMax.
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
Half wave resistive load, T
case
= 65oC 200 A
T
case
= 65oC 320 A
TV18..F
Fast Recovery Diode
Replaces March 1998 version, DS4211-2.2 DS4211-3.0 January 2000
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SURGE RATINGS
Conditions
Max. Units
3.5 kA
61 x 10
3
A2sI2t for fusingI2t
Surge (non-repetitive) forward currentI
FSM
ParameterSymbol
10ms half sine; with 0% V
RRM, Tj
= 150oC
2.8 kA
39.2x 10
3
A2sI2t for fusingI2t
Surge (non-repetitive) forward currentI
FSM
10ms half sine; with 50% V
RRM, Tj
= 150oC
THERMAL AND MECHANICAL DATA
dc
Conditions Max. Units
o
C/W- 0.06
Thermal resistance - case to heatsinkR
th(c-h)
Thermal resistance - junction to caseR
th(j-c)
Mounting torque 35.0Nm
with mounting compound
Symbol
Parameter
- 0.16
o
C/W
Min.
t
rr
50
Symbol Typ. Units
Parameter
V
FM
Forward voltage
I
RRM
Peak reverse current
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
I
RM
Reverse recovery current
K
Soft factor
V
TO
Threshold voltage
r
T
Slope resistance
V
FRM
Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC - 120 V
At Tvj = 150oC - 1.54 mΩ
At Tvj = 150oC - 1.64 V
1.3 - -
- 160 A
- 240 µC
- 3.2
µs
At V
RRM
, T
case
= 150oC-mA
At 1000A peak, T
case
= 25oC - 3.1 V
Conditions Max.
I
F
= 1000A, diRR/dt = 100A/µs
T
case
= 150oC, VR = 100V
CHARACTERISTICS
T
stg
Storage temperature range
-55 175
o
C
Nm
35.030.0Mounting torque-
T
vj
Virtual junction temperature
On-state (conducting) - 150
o
C
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DEFINITION OF K FACTOR AND Q
RA1
0.5x I
RR
I
RR
dIR/dt
t
1
t
2
τ
Q
RA1
= 0.5x IRR(t1 + t2)
k = t
1/t2
CURVES
500
750
1000
1250
1500
1750
2000
Instantaneous forward current I
F
- (A)
1.0 2.0 3.0 4.0 5.0
Instantaneous forward voltage V
F
- (V)
Measured under pulse
conditions
Tj = 150˚C
Tj = 25˚C
Fig.1 Maximum (limit) forward characteristics
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Fig.2 Maximum (limit) forward characteristics
0
100
200
300
400
500
Instantaneous forward current I
F
- (A)
1.0 1.5 2.0 2.5 3.0
Instantaneous forward voltage V
F
- (V)
Measured under
pulse conditions
Tj = 150˚C
Tj = 25˚C
0
50
100
150
200
250
Transient forward votage V
FP
- (V)
0 500 1000 1500 2000
Rate of rise of forward current dI
F
/dt - (A/µs)
Tj = 100˚C limit
Tj = 25˚C limit
Current
waveform
Voltage
waveform
V
FR
δy
δx
di = δy
dt δx
Fig.3 Transient forward voltage vs rate of rise of forward current
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1 10 100 1000
Rate of rise of reverse current dI
R
/dt - (A/µs)
100
10
1000
10000
Reverse recovered charge Q
S
- (µC)
I
RR
Q
S
tp = 1ms
I
F
dIR/dt
QS =
∫
Conditions:
T
j
= 150˚C,
V
R
= 100V
50µs
0
IF = 1000A
I
F
= 750A
I
F
= 500A
IF = 200A
IF = 100A
Fig.4 Recovered charge
1 10 100 1000
Rate of rise of reverse current dI
R
/dt - (A/µs)
10
1
100
10000
Reverse recovery current I
RR
- (A)
Conditions:
T
j
= 150˚C,
V
R
= 100V
IF = 1000A
I
F
= 750A
I
F
= 500A
IF = 200A
IF = 100A
Fig.5 Typical reverse recovery current vs rate of rise of reverse current
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0.100
0.010
0.001
Thermal impedance - (˚C/W)
0.01
0.1 1 10 100
Time - (s)
d.c.
Fig.6 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)
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PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.
K Thread 3/4" 16 UNF
M Thread M16
230 ± 10
No type + K - 27 ± 0.5
No type + M - 18 ± 0.5
12 min
10 min
3.17 max
Ø12.5 ± 0.5
230 ± 10
20 ± 2
Hex. 32AF
Ø4
ASSOCIATED PUBLICATIONS
Title Application Note
Number
Calculating the junction temperature or power semiconductors AN4506
Thyristor and diode measurement with a multi-meter AN4853
Use of V
TO
, rT on-state characteristic AN5001
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of W orld Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4211-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: [email protected]
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
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No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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