Datasheet TT8M11 Datasheet (ROHM)

4V Drive Nch + Pch MOSFET

TT8M11

Data Sheet

 Structure

Silicon N-channel MOSFET/ Silicon P-channel MOSFET

Features

1) Low on-resistance.

2) Low voltage drive(4V drive).

3) Small surface mount package(TSST8).

 Application

Switching

 Packaging specifications

Package Taping

Type

Code TCR Basic ordering unit (pieces) 3000

TT8M11 

 Absolute maximum ratings (Ta = 25C)

Parameter Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current (Body Diode)

Continuous I

Pulsed I Continuous I

Pulsed I

Power dissipation

Symbol

DSS

GSS

D

DP

s

sp

P

D

Tr1 : N-ch Tr2 : P-ch

*1

*2

Channel temperature Tch C Range of storage temperature Tstg C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Limits

30 30 V

20 20 V

3 2.5 A

12 10 A

0.8 0.8 A

12 10 A

1.25

1.0

W / TOTAL

W / ELEMENT

150

55 to 150

Dimensions (Unit : mm)

TSST8

(8) (7) (6) (5)

(1) (2) (3) (4)

Abbreviated symbol : M11

Inner circuit

(8) (7)

(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain

∗2

∗1

(1) (2)

1 ESD PROTECTION DIODE 2 BODY DIODE

(6) (5)

∗2

∗1

(3) (4)

1/10

2011.09 - Rev.A

Data Sheet

TT8M11

 Electrical characteristics (Ta = 25C)

<Tr1(Nch)>

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

oss

d(on)

d(off)

fs

iss

rss

r

f

g

gs

gd

ConditionsParameter

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-5171 I

*

-6794 I

78 109 I

*

l 2.7 - - S VDS=10V, ID=3A

m

D

=3A, VGS=10V

=3A, VGS=4.5V

=3A, VGS=4V

- 140 - pF VDS=10V

- 55 - pF VGS=0V

- 28 - pF f=1MHz

-5-nsV

*

- 13 - ns VGS=4.5V

*

- 20 - ns RL=10

*

-3-nsR

*

- 2.5 - nC VDD 10V, ID=3A

*

- 0.8 - nC VGS=5V

- 0.6 - nC

*

15V, ID=1.5A

DD

=10

G

Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=3A, VGS=0V

2/10

2011.09 - Rev.A

Data Sheet

TT8M11

 Electrical characteristics (Ta = 25C)

<Tr2(Pch)>

Parameter Conditions

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

- 1 AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-6084 I

*

- 95 130 I

- 115 160 I

*

l 1.8 - - S VDS=10V, ID=2.5A

=2.5A, VGS=10V

D

m

=1.2A, VGS=4.5V

D

=1.2A, VGS=4V

D

- 460 - pF VDS=10V

- 65 - pF VGS=0V

- 40 - pF f=1MHz

-7-nsV

*

- 20 - ns VGS=10V

*

- 35 - ns RL=12.5

*

- 14 - ns RG=10

*

- 4.8 - nC VDD 15V, ID=2.5A

*

- 1.8 - nC VGS=5V

*

- 1.2 - nC

*

15V, ID=1.2A

DD

Body diode characteristics (Source-Drain)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

Conditions

--1.2 V Is=2.5A, VGS=0V

3/10

2011.09 - Rev.A

Data Sheet

TT8M11

Electrical characteristic curves (Ta=25C)

〈Tr.1(Nch)〉

0

1

2

3

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=2.5V

T

a

=25°C

pulsed

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=3.0V

0

1

2

3

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=2.5V

Ta=25°C pulsed

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=3.0V

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V

T

a

=25

°C

pulsed

VGS=4.0V

VGS=10V

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

10

100

1000

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

4/10

2011.09 - Rev.A

Data Sheet

TT8M11

0.01

0.1

1

10

100

0.001 0.01 0.1 1 10

Forward Transfer Admittance

Y

fs

[S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0.001

0.01

0.1

1

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.8 Typical Transfer Characteristics

VDS=10V pulsed

Ta=125°C

Ta=75°C Ta=25°C

Ta=-25°C

0.01

0.1

1

10

0.0 0.5 1.0 1.5

Source Current : Is [A]

Source-Drain Voltage : VSD [V]

Fig.9 Source Current vs. Source-Drain Voltage

VGS=0V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0

50

100

150

0 2 4 6 8 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Gate-Source Voltage : VGS [V]

Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

Ta=25°C pulsed

ID=3.0A

ID=1.5A

1

10

100

1000

0.01 0.1 1 10

Switching Time : t [ns]

Drain Current : ID [A]

Fig.11 Switching Characteristics

t

d(on) tr

t

d(off) tf

V

DD

≒15V

V

GS

=4.5V

R

G

=10Ω

T

a

=25°C

Pulsed

0

2

4

6

8

10

0 1 2 3 4 5

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.12 Dynamic Input Characteristics

Ta=25°C VDD=15V I

D

=3A

Pulsed

5/10

2011.09 - Rev.A

Data Sheet

TT8M11

10

100

1000

0.01 0.1 1 10 100

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.13 Typical Capacitance vs. Drain-Source Voltage

T

a

=25°C

f=1MHz VGS=0V

C

iss

C

oss

C

rss

0.01

0.1

1

10

100

0.1 1 10 100

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.14 Maximum Safe Operating Area

T

a

=25°C

Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm)

Operation in this area

is limited by R

DS(on)

(VGS = 10V)

PW = 100μs

PW = 1ms

PW = 10ms

DC Operation

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width

T

a

=25°C

Single Pulse : 1Unit

Mounted on a ceramic board. (30mm

× 30mm × 0.8mm)

Rth

(ch-a)

=125°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

6/10

2011.09 - Rev.A

Data Sheet

TT8M11

〈Tr.2(Pch)〉

0

2

4

6

8

10

0 0.2 0.4 0.6 0.8 1

VGS=-3.0V

V

GS

=-

10V

V

GS

=-

6.0V

V

GS

=-

4.5V

V

GS

=-

4.0V

VGS=-3.4V

Ta=25°C Pulsed

Fig.1 Typical Output Characteristics(Ⅰ)

DRAIN CURRENT : -I

D

[A]

DRAIN-SOURCE VOLTAGE : -VDS[V]

0

2

4

6

8

10

0 2 4 6 8 10

VGS=-3.4V

Ta=25°C Pulsed

V

GS

=-10V

V

GS

=-4.5V

V

GS

=-4.0V

VGS=-3.0V

VGS=-2.6V

Fig.2 Typical Output Characteristics(Ⅱ)

DRAIN-SOURCE VOLTAGE : -VDS[V]

DRAIN CURRENT : -I

D

[A]

0.001

0.01

0.1

1

10

0 1 2 3 4

V

DS

=-

10V

Pulsed

Ta=125°

C

Ta=75°

C

Ta=25°

C

Ta=-25

°C

Fig.3 Typical Transfer Characteristics

DRAIN CURRENT : -I

D

[A]

GATE-SOURCE VOLTAGE : -VGS[V]

10

100

1000

0.1 1 10

V

GS

=-

4.0V

V

GS

=-

4.5V

V

GS

=-10V

Ta=25

°C

Pulsed

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ)

DRAIN-CURRENT : -ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(ON)[mW]

10

100

1000

0.1 1 10

V

GS

=-

10V

Pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ)

DRAIN-CURRENT : -ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(ON)[mW]

10

100

1000

0.1 1 10

V

GS

=-4.5V

Pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)

DRAIN-CURRENT : -ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(ON)[mW]

7/10

2011.09 - Rev.A

Data Sheet

TT8M11

10

100

1000

0.1 1 10

V

GS

=-4.0V

Pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ)

DRAIN-CURRENT : -ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(ON)[mW]

0.1

1

10

0.01 0.1 1 10

V

DS

=-10V

Pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

Fig.8 Forward Transfer Admittance vs. Drain Current

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : -ID[A]

0.01

0.1

1

10

0 0.5 1 1.5

V

GS

=0V

Pulsed

Ta=125°C

Ta=75°C Ta=25°C

Ta=-25°C

Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage

REVERSE DRAIN CURRENT : -Is [A]

SOURCE-DRAIN VOLTAGE : -VSD [V]

0

100

200

300

400

500

0 5 10 15

Ta=25

°C

Pulsed

ID=-2.5A

ID=-1.2A

Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(ON)[mW]

GATE-SOURCE VOLTAGE : -VGS[V]

1

10

100

1000

0.01 0.1 1 10

t

r

t

f

td(on)

td(off)

Ta=25°

C

V

DD

=-15V

V

GS

=-10V

R

G

=10Ω

Pulsed

Fig.11 Switching Characteristics

SWITCHING TIME : t [ns]

DRAIN-CURRENT : -ID[A]

0

2

4

6

8

10

0 2 4 6 8 10

Ta=25°

C

V

DD

=-15V

I

D

=-2.5A

R

G

=10Ω

Pulsed

Fig.12 Dynamic Input Characteristics

GATE-SOURCE VOLTAGE : -V

GS

[V]

TOTAL GATE CHARGE : Qg [nC]

8/10

2011.09 - Rev.A

Data Sheet

TT8M11

10

100

1000

10000

0.01 0.1 1 10 100

Ciss

Coss

Crss

Ta=25°C f=1MHz

VGS=0V

Fig.13 Typical Capacitance vs. Drain-Source Voltage

DRAIN-SOURCE VOLTAGE : -VDS[V]

CAPACITANCE : C [pF]

0.01

0.1

1

10

100

0.1 1 10 100

Drain Current : -I

D

[ A ]

Drain-Source Voltage : -VDS [ V ]

Fig.14 Maximum Safe Operating Area

T

a

=25°C

Single Pulse

： 1Unit

Mounted on a ceramic board. (30mm × 30mm × 0.8mm)

Operation in this area

is limited by R

DS(on)

(VGS = -10V)

PW = 100μs

PW = 1ms

PW = 10ms

DC Operation

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width ： Pw (s)

Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width

T

a

=25°C

Single Pulse : 1Unit

Mounted on a ceramic board. (30mm

× 30mm × 0.8mm)

Rth

(ch-a)

=125°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

9/10

2011.09 - Rev.A

Data Sheet

TT8M11

F

it

%

V V

F

S

V

F

it

%

V

F

S

V

 Measurement circuits

<Tr1(Nch)>

V

GS

D.U.T.

R

G

Pulse width

D

I

V

DS

R

L

V

DD

50%

10%

GS DS

10% 10%

t

d(on)

t

on

90%

50%

90% 90

t

d(off)

t

r

t

off

t

f

ig.1-1 Switching Time Measurement Circu

V

I

G(Const.)

GS

I

D.U.T.

ig.2-1 Gate Charge Measurement Circuit

<Tr2(Pch)>

D

I

VGS

D.U.T.

RG

Fig.1-2 Switching Waveforms

V

G

D

V

D

R

L

GS

QgsQ

V

DD

Q

g

gd

Charge

Fig.2-2 Gate Charge Waveform

Pulse width

GS

VDS

RL

VDD

10%

50%

90%

50%

10% 10

DS

90% 90%

t

d(on)

t

r

t

on

t

d(off)

t

f

t

off

ig.1-1 Switching Time Measurement Circu

D

VGS

IG(Const.)

I

RL

D.U.T.

VD

Fig.1-2 Switching Waveforms

V

G

Q

g

GS

QgsQ

gd

VDD

Charge

ig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

 Notice

Please consider to design ESD protection circuit.

This product might cause chip aging and breakdown under the large electrified environment.

10/10

2011.09 - Rev.A

Notes

Notice

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http://www.rohm.com/contact/

R1120A