Page 1
TSUS540.
Vishay Telefunken
GaAs Infrared Emitting Diodes in ø 5 mm (T–1¾)
Package
Description
TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear,
blue–grey tinted plastic package. The devices are
spectrally matched to silicon photodiodes and phototransistors.
94 8390
Features
D
Low cost emitter
D
Low forward voltage
D
High radiant power and radiant intensity
D
Suitable for DC and high pulse current operation
D
Standard T–1¾ (ø 5 mm) package
D
Comfortable angle of half intensity ϕ = ± 22
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 950 nm
°
Applications
Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation
angle requirements in combination with PIN photodiodes or phototransistors.
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
Document Number 81056
Rev. 2, 20-May-99
t x 5sec, 2 mm from case
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R
F
FM
FSM
V
amb
stg
T
sd
thJA
5 V
150 mA
300 mA
2.5 A
210 mW
j
100
–55...+100
–55...+100
260
375 K/W
°
°
°
°
C
C
C
C
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Page 2
TSUS540.
gFm
F
Radiant Intensity
F
m
F
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Temp. Coefficient of
f
e
IF = 20 mA TK
F
VF
R
j
f
e
Angle of Half Intensity ϕ ±22 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
IF = 1.5 A t
Fall Time IF = 100 mA t
IF = 1.5 A t
l
Dl
p
l
p
r
r
f
f
1.3 1.7 V
–1.3 mV/K
100
m
30 pF
–0.8 %/K
950 nm
50 nm
0.2 nm/K
800 ns
400 ns
800 ns
400 ns
A
Type Dedicated Characteristics
T
= 25_C
amb
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward Voltage IF=1.5A, tp=100ms TSUS5400/5401 V
TSUS5402 V
IF=100mA, TSUS5400 I
tp=20ms
TSUS5401 I
TSUS5402 I
IF=1.5A, tp=100ms TSUS5400 I
TSUS5401 I
TSUS5402 I
Radiant Power IF=100mA, TSUS5400
tp=20ms
TSUS5401
TSUS5402
F
F
e
e
e
e
e
e
f
e
f
e
f
e
7 14 mW/sr
10 17 mW/sr
15 20 mW/sr
60 140 mW/sr
85 160 mW/sr
120 190 mW/sr
2.2 3.4 V
2.2 2.7 V
13 mW
14 mW
15 mW
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Document Number 81056
Page 3
TSUS540.
Vishay Telefunken
Typical Characteristics (T
= 25_C unless otherwise specified)
amb
250
200
150
R
thJA
100
V
50
P – Power Dissipation ( mW )
94 7957 e
0
020406080
T
– Ambient Temperature ( °C )
amb
100
Figure 1. Power Dissipation vs. Ambient Temperature
250
200
150
4
10
3
10
2
10
1
10
F
0
I – Forward Current ( mA )
10
–1
10
0123
V
94 7996 e
– Forward Voltage ( V )
F
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
IF = 10 mA
1.0
4
100
R
thJA
F
I – Forward Current ( mA )
50
94 7988 e
0
020406080
T
– Ambient Temperature ( °C )
amb
100
Figure 2. Forward Current vs. Ambient Temperature
1
10
I
= 2.5 A ( Single Pulse )
FSM
tp/T=0.01
0
10
0.05
0.1
F
I – Forward Current ( A )
0.5
1.0
–1
10
–2
10
–1
10
0
10
1
10
2
10
tp – Pulse Duration ( ms )94 7989 e
0.9
Frel
0.8
V – Relative Forward Voltage
0.7
020406080
T
94 7990 e
– Ambient Temperature ( °C )
amb
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
1000
100
10
e
I – Radiant Intensity ( mW/sr )
1
0
10
10
IF – Forward Current ( mA )94 7997 e
TSUS 5402
1
2
10
TSUS 5401
TSUS 5400
10
100
3
4
10
Figure 3. Pulse Forward Current vs. Pulse Duration
Document Number 81056
Rev. 2, 20-May-99
Figure 6. Radiant Intensity vs. Forward Current
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3 (6)
Page 4
TSUS540.
Vishay Telefunken
1000
TSUS 5402
100
TSUS 5400
10
– Radiant Power ( mW )
1
e
F
0.1
0
10
1
10
2
10
3
10
IF – Forward Current ( mA )94 7998 e
Figure 7. Radiant Power vs. Forward Current
1.6
1.2
IF = 20 mA
F
0.8
e rel e rel
I ;
0.4
0
–10 10 500 100
T
94 7993 e
– Ambient Temperature ( °C )
amb
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
10
140
1.25
1.0
0.75
0.5
– Relative Radiant Power
e rel
0.25
F
IF = 100 mA
0
4
900 950
94 7994 e
l
– Wavelength ( nm )
1000
Figure 9. Relative Radiant Power vs. Wavelength
0°
10°20
°
30°
40°
1.0
0.9
0.8
e rel
0.7
I – Relative Radiant Intensity
0.4 0.2 0 0.2 0.4
0.6
94 7999 e
50°
60°
70°
80°
0.6
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
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Document Number 81056
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Page 5
Dimensions in mm
TSUS540.
Vishay Telefunken
96 12119
Document Number 81056
Rev. 2, 20-May-99
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Page 6
TSUS540.
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
6 (6) Rev. 2, 20-May-99
Document Number 81056
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