Page 1
TSTS710.
Vishay Telefunken
GaAs IR Emitting Diodes in Hermetically Sealed TO18
Case
Description
TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18
package. Their glass lenses provide a very high radiant intensity without external optics.
Features
D
Very high radiant intensity
D
Suitable for pulse operation
D
Narrow angle of half intensity ϕ = ± 5
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 950 nm
°
94 8483
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation P
Junction Temperature T
Storage Temperature Range T
Thermal Resistance Junction/Ambient R
Thermal Resistance Junction/Case R
T
x 25 °C
case
tp/T = 0.5, tp x 100 ms,
T
x 25 °C
case
tp x 100 ms
T
x 25 °C
case
I
I
FM
I
FSM
P
thJA
thJC
F
stg
R
V
V
j
5 V
250 mA
500 mA
2.5 A
170 mW
500 mW
100
–55...+100
450 K/W
150 K/W
°
C
°
C
Document Number 81047
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
Page 2
TSTS710.
y
F
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage
IF = 100 mA, tp x 20 ms
Breakdown Voltage IR = 100 mA V
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Power
Temp. Coefficient of
f
e
IF = 100 mA, tp x 20 ms
IF = 100 mA TK
Angle of Half Intensity ϕ ±5 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Rise Time IF = 1.5 A, tp/T = 0.01,
tp x 10 ms
Fall Time IF = 1.5 A, tp/T = 0.01,
tp x 10 ms
V
F
(BR)
f
e
f
l
p
Dl
t
r
t
f
1.3 1.7 V
5 V
j
30 pF
7 mW
e
–0.8 %/K
950 nm
50 nm
400 ns
400 ns
Type Dedicated Characteristics
T
= 25_C
amb
Parameter Test Conditions Type Symbol Min Typ Max Unit
Radiant Intensity IF=100mA, tp=20ms TSTS7100 I
TSTS7101 I
TSTS7102 I
TSTS7103 I
Typical Characteristics (T
600
R
thJC
500
400
300
200
R
V
P – Power Dissipation ( mW )
thJA
100
= 25_C unless otherwise specified)
amb
300
250
200
150
100
F
I – Forward Current ( mA )
50
e
e
e
e
R
thJA
10 mW/sr
12.5 25 mW/sr
20 40 mW/sr
32 64 mW/sr
R
thJC
0
0 25 50 75 100
T
94 8017 e
Figure 1. Power Dissipation vs. Ambient Temperature
www.vishay.de • FaxBack +1-408-970-5600
2 (5) Rev. 2, 20-May-99
– Ambient Temperature ( °C )
amb
125
0
020406080
T
94 8018 e
Figure 2. Forward Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
Document Number 81047
100
Page 3
TSTS710.
Vishay Telefunken
1
10
I
= 2.5 A ( Single Pulse )
FSM
tp/T=0.01
0
10
0.05
0.1
F
I – Forward Current ( A )
0.2
0.5
–1
10
–2
10
–1
10
0
10
1
10
2
10
tp – Pulse Duration ( ms )94 8003 e
Figure 3. Pulse Forward Current vs. Pulse Duration
4
10
3
10
2
10
1
10
F
0
I – Forward Current ( mA )
10
1000
TSTS 7102
100
TSTS 7103
10
TSTS 7101
1
e
I – Radiant Intensity ( mW/sr )
tp/T = 0.01 , tp = 20 ms
0.1
3
10
94 8001 e
0
10
1
10
I
– Forward Current ( mA )
F
2
10
Figure 6. Radiant Intensity vs. Forward Current
1000
100
10
– Radiant Power ( mW )
1
e
F
4
10
–1
10
0123
V
94 7996 e
– Forward Voltage ( V )
F
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
IF = 10 mA
1.0
0.9
Frel
0.8
V – Relative Forward Voltage
0.7
020406080
T
94 7990 e
– Ambient Temperature ( °C )
amb
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
100
4
0.1
0
10
1
10
2
10
3
10
4
10
IF – Forward Current ( mA )94 7977 e
Figure 7. Radiant Power vs. Forward Current
1.6
1.2
IF = 20 mA
F
0.8
e rel e rel
I ;
0.4
0
–10 10 500 100
T
94 7993 e
– Ambient Temperature ( °C )
amb
140
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
Document Number 81047
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
3 (5)
Page 4
TSTS710.
Vishay Telefunken
1.25
1.0
0.75
0.5
– Relative Radiant Power
e rel
0.25
F
IF = 100 mA
0
900 950
94 7994 e
l
– Wavelength ( nm )
1000
1.0
0.9
0.8
e rel
0.7
I – Relative Radiant Intensity
0.4 0.2 0 0.2 0.4
0.6
94 8019 e
0°
10°20
°
30°
40°
50°
60°
70°
80°
0.6
Figure 9. Relative Radiant Power vs. Wavelength
Dimensions in mm
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
14486
www.vishay.de • FaxBack +1-408-970-5600
4 (5) Rev. 2, 20-May-99
Document Number 81047
Page 5
TSTS710.
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 81047
Rev. 2, 20-May-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
5 (5)
Loading...