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TSTA7300
Vishay Telefunken
GaAlAs IR Emitting Diode in Hermetically Sealed TO18
Case
Description
TSTA7300 is a high efficiency infrared emitting diode
in GaAlAs on GaAlAs technology in a hermetically
sealed TO–18 package. Its glass lens provides a high
radiant intensity without external optics.
Features
D
High radiant power and radiant intensity
D
Suitable for pulse operation
D
Angle of half intensity ϕ = ± 12
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 875 nm
°
94 8642
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current
Surge Forward Current
Power Dissipation P
Junction Temperature T
Storage Temperature Range T
Thermal Resistance Junction/Ambient R
Thermal Resistance Junction/Case R
tp/T = 0.5, tp x 100 ms
tp x 100 ms
T
x 25 °C
case
I
FM
I
FSM
P
thJA
thJC
F
stg
R
V
V
j
5 V
100 mA
200 mA
2.5 A
180 mW
500 mW
100
–55...+100
450 K/W
150 K/W
°
C
°
C
Document Number 81045
Rev. 2, 20-May-99
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TSTA7300
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage
IF = 100 mA, tp x 20 ms
Breakdown Voltage IR = 100 mA V
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity
Radiant Power
Temp. Coefficient of
f
e
IF = 100 mA, tp x 20 ms
IF = 100 mA, tp x 20 ms
IF = 100 mA TK
Angle of Half Intensity ϕ ±12 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Rise Time IF = 1.5 A, tp/T = 0.01,
tp x 10 ms
Fall Time IF = 1.5 A, tp/T = 0.01,
tp x 10 ms
V
F
(BR)
I
e
f
e
f
l
p
Dl
t
r
t
f
1.4 1.8 V
5 V
j
20 pF
10 20 mW/sr
10 mW
e
–0.7 %/K
875 nm
80 nm
300 ns
300 ns
Typical Characteristics (T
600
R
thJC
500
400
300
200
R
V
P – Power Dissipation ( mW )
12790
Figure 1. Power Dissipation vs. Ambient Temperature
thJA
100
0
0 25 50 75 100
T
– Ambient Temperature ( °C )
amb
= 25_C unless otherwise specified)
amb
125
125
100
R
thJC
75
50
R
F
I – Forward Current ( mA )
25
0
020406080
T
94 7971 e
Figure 2. Forward Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
thJA
100
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Document Number 81045
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TSTA7300
Vishay Telefunken
1
10
I
= 2.5 A ( Single Pulse )
FSM
tp/T=0.01
0
10
0.05
0.1
F
I – Forward Current ( A )
0.2
0.5
–1
10
–2
10
–1
10
0
10
1
10
2
10
tp – Pulse Duration ( ms )94 8003 e
Figure 3. Pulse Forward Current vs. Pulse Duration
4
10
tp = 100 ms
t
/T = 0.001
3
10
p
1000
100
10
1
e
I – Radiant Intensity ( mW/sr )
0.1
0
10
1
10
2
10
3
10
10
IF – Forward Current ( mA )94 7974 e
Figure 6. Radiant Intensity vs. Forward Current
1000
100
10
4
2
10
F
I – Forward Current ( mA )
1
10
0123
V
94 8005 e
– Forward Voltage ( V )
F
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
IF = 10 mA
1.0
0.9
Frel
0.8
V – Relative Forward Voltage
0.7
020406080
T
94 7990 e
– Ambient Temperature ( °C )
amb
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
100
– Radiant Power ( mW )
1
e
F
4
0.1
0
10
1
10
2
10
3
10
4
10
IF – Forward Current ( mA )94 7972 e
Figure 7. Radiant Power vs. Forward Current
1.6
1.2
IF = 20 mA
F
0.8
e rel e rel
I ;
0.4
0
–10 10 500 100
T
94 8020 e
– Ambient Temperature ( °C )
amb
140
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
Document Number 81045
Rev. 2, 20-May-99
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Page 4
TSTA7300
Vishay Telefunken
1.25
1.0
0.75
0.5
– Relative Radiant Power
e
F
0.25
0
780 880
94 8000 e
IF = 100 mA
F
(l)
=
e
Fe(l)/
rel
l
– Wavelength ( nm )
Fe(
lp)
980
1.0
0.9
0.8
e rel
0.7
I – Relative Radiant Intensity
0.4 0.2 0 0.2 0.4
0.6
94 8021 e
0°
10°20
°
30°
40°
50°
60°
70°
80°
0.6
Figure 9. Relative Radiant Power vs. Wavelength
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
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Document Number 81045
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Dimensions in mm
TSTA7300
Vishay Telefunken
96 12179
Document Number 81045
Rev. 2, 20-May-99
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TSTA7300
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
6 (6) Rev. 2, 20-May-99
Document Number 81045
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