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TSPF5400
Vishay Telefunken
High Speed IR Emitting Diode in ø 5 mm (T–1¾)
Package
Description
TSPF5400 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package.
The new technology combines the high speed of DH–
GaAlAs with the efficiency of standard GaAlAs and the
low forward voltage of the standard GaAs technology .
94 8390
Features
D
High modulation bandwidth (10 MHz)
D
Extra high radiant power and radiant intensity
D
Low forward voltage
D
Standard T–1¾ (ø 5 mm) package
D
Angle of half intensity ϕ = ± 24
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 870 nm
°
Applications
Infrared high speed remote control and free air data transmission systems with high modulation frequencies or
high data transmission rate requirements.
TSPF5400 is ideal for the design of transmission systems and for carrier frequency based systems (e.g. ASK
/ FSK – coded, 450 kHz or 1.3 MHz).
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
Document Number 81038
Rev. 2, 20-May-99
t x 5sec, 2 mm from case
www.vishay.de • FaxBack +1-408-970-5600
R
F
FSM
V
amb
stg
T
sd
thJA
5 V
100 mA
200 mA
210 mW
j
100
–40...+100
–40...+100
260
350 K/W
°
°
°
°
C
C
C
C
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TSPF5400
g
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 200 mA, tp = 100 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of
f
e
IF = 100 mA TK
F
F
VF
R
j
e
f
e
30 45 mW/sr
f
e
Angle of Half Intensity ϕ ±24 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
Fall Time IF = 100 mA t
Dl
l
p
½
l
p
r
f
1.5 1.8 V
1.8 2.1 V
–1.7 mV/K
10
m
160 pF
40 mW
–0.7 %/K
870 nm
50 nm
0.2 nm/K
30 ns
30 ns
A
Typical Characteristics (T
250
200
150
R
thJA
100
V
50
P – Power Dissipation ( mW )
0
020406080
T
94 7957 e
Figure 1. Power Dissipation vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
= 25_C unless otherwise specified)
amb
100
250
200
150
100
R
F
I – Forward Current ( mA )
50
0
020406080
T
94 8879
Figure 2. Forward Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
thJA
100
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2 (6) Rev. 2, 20-May-99
Document Number 81038
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TSPF5400
Vishay Telefunken
4
10
1000
3
10
2
10
1
10
F
I – Forward Current ( mA )
0
10
0123
V
96 12169
– Forward Voltage ( V )
F
Figure 3. Forward Current vs. Forward Voltage
1.2
1.1
IF = 10 mA
1.0
0.9
Frel
0.8
V – Relative Forward Voltage
100
10
– Radiant Power ( mW )
1
e
F
4
0.1
0
10
1
10
2
10
3
10
4
10
IF – Forward Current ( mA )96 12171
Figure 6. Radiant Power vs. Forward Current
1.6
1.2
F
0.8
e rel e rel
I /
0.4
0.7
020406080
T
94 7990 e
– Ambient Temperature ( °C )
amb
Figure 4. Relative Forward Voltage vs.
Ambient Temperature
1000
100
10
1
e
I – Radiant Intensity ( mW/sr )
0.1
3
10
96 12170
0
10
1
10
I
– Forward Current ( mA )
F
2
10
Figure 5. Radiant Intensity vs. Forward Current
100
10
0
–10 10 500 100
T
94 8882
– Ambient Temperature ( °C )
amb
140
Figure 7. Rel. Radiant Intensity\Power vs.
Ambient Temperature
1.25
1.0
0.75
0.5
– Radiant Power ( mW )
e
F
0.25
0
4
780 880
95 9886
l
– Wavelength ( nm )
980
Figure 8. Relative Radiant Power vs. Wavelength
Document Number 81038
Rev. 2, 20-May-99
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3 (6)
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TSPF5400
Vishay Telefunken
0°
10°20
°
30°
1.0
0.9
0.8
e rel
0.7
I – Relative Radiant Intensity
0.4 0.2 0 0.2 0.4
0.6
94 8883
Figure 9. Relative Radiant Intensity vs.
Angular Displacement
40°
50°
60°
70°
80°
0.6
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4 (6) Rev. 2, 20-May-99
Document Number 81038
Page 5
Dimensions in mm
TSPF5400
Vishay Telefunken
Document Number 81038
Rev. 2, 20-May-99
12791
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5 (6)
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TSPF5400
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
6 (6) Rev. 2, 20-May-99
Document Number 81038
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