Datasheet TSP160B, TSP140B, TSP220B, TSP190B, TSP065B Datasheet (PANJIT)

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Page 1
PRELIMINARY
TSP058B - TSP320B
AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE
FEATURES
• Designed for telecommunications applications such as line cards, modems, PBX, FAX, LAN,VHDSL
• Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68
• Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life
DO-15
SUMMARY ELECTRICAL CHARACTERISTICS
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rebmuNtraP
B850PST 85 77 5 5 008 051 07 001 42 92 B560PST56885 5 00805176092282 B570PST 57 89 5 5 008 051 76 87 32 72 B090PST0903155 00805175169112 B021PST 021 061 5 5 008 051 05 85 71 02 B041PST04108155 00805194456191 B061PST 061 022 5 5 008 051 64 35 51 81 B091PST09106255 00805154354181 B022PST 022 003 5 5 008 051 44 25 31 81 B572PST57205355 00805144153181 B023PST 023 004 5 5 008 051 34 05 31 71
seton)3,1()6,5,3()3()3()3()3,2()3()3()3()3(
.xaM .xaM .xaM .xaM .xaM .niM .pyT .xaM .pyT .xaM
V
DRM
V V V
V
revokaerB
egatloV
BOI@BOVT
etatS-nO
egatloV
A1@ I
DRM
µA
THYRISTOR
evititepeR
etatS-ffOkaeP
tnerruC
revokaerB
tnerruC
I
BO
Am Am Fp Fp
gnidloH
tenrruC
I
H
C
O
V0@
cd
C
ecnaticapaCetatS-ffO
Vm51=caV,zHM1=f(
RMS
)
O
V05@
cd
TSP058B - TSP320B
NOTES:
1. Specific V
2. Specific IH values are available by request.
3. All ratings and characteristics are at 25 °C unless otherwise specified.
4. V
applies for the life of the device. I
DRM
5. V
is at 100V/msec, ISC =10Apk, VOC=1KVpk, 10/1000 Waveform
BO1
6. V
is at f = 60 Hz, ISC = 1 A
BO2
Ver: June 2001
values are available by request.
DRM
, Vac = 1KV
(RMS)
will be in spec during and following operation of the device.
DRM
, RL = 1 K, 1/2 AC cycle
(RMS)
PAGE 1
Page 2
PRELIMINARY
TSP058B - TSP320B
SELECTION GUIDE
Follow these steps to select the proper Thyristor surge protector for your application:
1. Define the operating parameters for the circuit:
• Ambient operating temperature range
• Maximum telephone line operating current (highest battery and shortest copper loop)
• Maximum operating voltage: (Maximum DC bias + peak ringing voltage)
• Maximum surge current
• System voltage damage threshold
• Select device with an off-state voltage rating (V
3. Select surge current ratings (I
4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the system.
5. Verify that the maximum breakover voltage of the device is below the system damage threshold.
6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range.
7. Verify that the device's dimensions fit the application's space considerations.
8. Independently evaluate and test the suitability and performance of the device in the application
PPS
and I
) those which the application must withstand.
TSM
) above the maximum operating voltage at the minimum operating temperature.
DRM
THYRISTOR
MAXIMUM SURGE RATINGS (TJ = 25 ºC UNLESS OTHERWISE NOTED)
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lobmyS I
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evaWegatloVtiucriC-nepO 01/2 µs 05/2.1 µs 061/01 µs 007/01 µs 065/01 µs 0001/01 µs
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setoN )6,5,4,2,1( )4,3,2,1(
Notes:
1. Thermal accumulation between successive surge tests is not allowed.
2. The device under test initially must be in thermal equilibrium with TJ = 25 °C.
3. Test at 1 cycle, 60 Hz.
4. Surge ratings are non-repetitive because instantaneous junction temperatures may exceed the maximum rated TJ. Nevertheless, devices will survive many surge applications without degradation. Surge capability will not degrade over a device's typical operating life.
5. Adjust the surge generator for optimum current-wave accuracy when both voltage and current wave specifications cannot be exactly met. The current wave is more important than the voltage wave for accurate surge evaluation.
6. The waveform is defined as A/B ms where: A: (Virtual front time) = 1.25 X Rise time = 1.25 X (Tb - Ta) B (Duration time to 50% level of Ipps) = T1 - T
A003A522A051A511A001A08
0
PPS
% Ipps
100%
80%
60%
40%
20%
0%
TbTa T1To
Time
TSP058B - TSP320B
kaePevititepeR-noN
tnerruCegruSetatS-nO
I
TSM
A03
Ver: June 2001
PAGE 2
Page 3
PRELIMINARY
TSP058B - TSP320B
MAXIMUM THERMAL RATINGS
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Notes:
PCB board mounted on minimum foot print.
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egnaRerutarepmeTnoitcnuJgnitarepOT egnaRerutarepmeTtneibmAgnitarepO Ta 56ot04-
J 051ot04-
tinU
O
C
O
C
O
C
THERMAL CHARACTERISTICS
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TsdaeLotnoitcnuJecnatsiseRlamrehT
L
Notes:
The junction to lead thermal resistance represents a minimum limiting value with both leads soldered to a large near-infinite heatsink. The
junction to ambient thermal resistance depends strongly on board mounting conditions and typically is 3 to 6 times higher than the junction
to lead resistance. The data shown is to be used as guideline values for preliminary engineering.
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.sezisdaplacitnediotderedlossdaelhtoB.citsalp
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θ LJ
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O
W/C
THYRISTOR
TSP058B - TSP320B
ELECTRICAL CHARACTERISTICS (TC = 25°C UNLESS OTHERWISE NOTED)
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kaePevititepeR
tnerruCetatS-ffO
1tnerruCgnidloH0001/01 µ I,mrofevaws egatloVetatS-nO I
Notes: Specific IH values are available by request.
tnerruCrevokaerB I,zH06=f
D Vdetar=
V
T
DRM
SC
V,smrA1= ca R,smrVK1=
CS V,A01= CO R,V26=
003=wT,A1= µ eslup1,s VT 5 V
L
K1= elcycCA2/1, I OB 008 Am
L
004= IH 051Am
I
DRM
5
µA
Ver: June 2001
PAGE 3
Page 4
PRELIMINARY
TSP058B - TSP320B
+I
IPPS
ITSM IT
IBO
IH
IBR
_
V
VT
_
I
citsiretcarahC lobmyS eulaV
V
IDRM
BO
I
BO
H
I
egatloVrevokaerB
tnerruCrevokaerB V(egatlovrevokaerbehttagniwolftnerrucsuoenatnatsnI
tnerruCgnidloH etats-noehtniecivedehtniatniamotderiuqertnerrucmuminiM
VDRM
VBO
VBR
+V
THYRISTOR
TSP058B - TSP320B
esirfoetartnerrucdnaegatlovdeificepsarednu
derusaemnwodkaerbtaroniecivedehtssorcaegatlovmumixaM
BO
)
I
T
V
V
DRM
I
DRM
I
PPS
Ver: June 2001
T
td/idtnerrucetats-nofoesirfoetarlacitirC
td/vd egatloVetatS-ffOfoesiRfoetaRlacitirC
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tnerruceslupkaePevititepeR-noN
Vfo
DRM
T
)
(tnerrucI
segatlov
tsetrednu
deificepsatanoitidnocetats-noehtniecivedehtssorcaegatloV
llagnidulcni,egatlovetats-ffoehtfoeulavsuoenatnatsnitsehgihehT
tneisnartevititepernonllagnidulcxetubsegatlovtneisnartevititeper
noitacilppaehtmorfstlusertahttnerrucfoeulav)kaep(mumixamehT
edutilpmadeificepsfotnerruceslupmikaepfoeulavmumixamdetaR
ecivedehtotegamadtuohtiwdeilppaebyamtahtepahsevawdna
.egamadtuohtiw
Vwoleb(egatlovfoesirfoetarmumixamehT
DRM
.etats-noehtotetats-ffoehtmorfgnihctiws
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esuactonlliwtaht)
PAGE 4
Page 5
PRELIMINARY
TSP058B - TSP320B
CAPACITANCE CHARACTERISTICS
F = 1 MHz, Vac = 15 mV
B850PST 07 001 95 47 35 86 54 95 42 92 B560PST76098596253634652282 B570PST 76 87 65 46 94 85 24 94 32 72 B090PST75168405246453839112 B021PST 05 85 24 54 83 05 13 33 71 02 B041PST94450434633403236191 B061PST 64 35 83 04 43 63 82 03 51 81 B091PST54358393335382034181 B022PST 44 25 73 93 23 53 72 03 31 81 B572PST44157393234372923181 B023PST 34 05 73 83 23 43 72 92 31 71
rms
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MECHANICAL DATA
C
O
Fp
cdV0 cdV1 cdV2 cdV5 cdV05
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ecnaticapaCetatS-ffO
THYRISTOR
TSP058B - TSP320B
• Case: JEDEC DO-15 molded plastic
• Terminals: Plated Axial leads, solderable per MIL-STD-750, Method 2026
• Polarity: Bi-directional
• Weight: 0.015 ounce, 0.4 gram
DO-15
1.0(25.4) MIN.
.300(7.6)
.230(5.8)
1.0(25.4) MIN.
Unit: inch ( mm )
.034(.86) .028(.71)
.140(3.6) .104(2.6)
Ver: June 2001
PAGE 5
Page 6
PRELIMINARY
TSP058B - TSP320B
DEVICE MARKING CODE
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B850PST B850PST B560PSTB560PST B570PST B570PST B090PSTB090PST B021PST B021PST B041PSTB041PST B061PST B061PST B091PSTB091PST B022PST B022PST B572PSTB572PST B023PST B023PST
ORDER & PACKING INFORMATION
eciveD gnikcaP yt'QredrO.niM sAredrO krameR
leeR&epaT"31 scp000,4 BxxxPST gnikcaPdradnatS
BxxxPST
kluBscp000,1B-BxxxPST
noitinummA scp000,3 B/T-BxxxPST
TSPP058B
YWWWP
PEC
1st line:
Marking code
2nd line:
PanJit logo
PEC
Last digit of calendar year
Y
Weekly
WW
Production line
P
THYRISTOR
TSP058B - TSP320B
Ver: June 2001
PAGE 6
Page 7
PRELIMINARY
TSP058B - TSP320B
RATING AND CHARACTERISTIC CURVES
90
80
Cseriesdevice
70
60
50
Capacitance (pF)
40
30
20
50 100 150 200 250 300 350
f=1 MHZ
Bseriesdevice
V =0VoltsDC
D
Aseriesdevice
V (V)
DRM
v =15mV AC
dRMS
O
T=25 C
J
TYPICAL CAPACITANCE V.S. RATED REPETITIVE OFF-STATE VOLTAGE
100
10
TSP220SC
m
1
Capacitance (pF)
70
60
50
40
30
20
10
0.1
f=1 MHZ
TSP075SC
TSP120SC
1
V Off-state Voltage (V)
D
v =15mV AC
dRMS
10 100
T=25 C
J
TSP140SC
TSP190SC
O
TYPICAL CAPACITANCE V.S. OFF-STATE VOLTAGE
THYRISTOR
TSP058B - TSP320B
0.1
0.01
D,
I Off-State Current ( A)
0.001
0.0001 0 20 40 60 80 100 120 140
TSP220SB
T(C)
TSP220SB
150
O
J
TYPICAL OFF-STATE CURRENT V.S JUNCTION TEMPERATURE
IMPORTANT NOTICE
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the
application. It will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices
made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information
herein are subject to change without notice. New products and improvements in products and their characterization are constantly in
process. This provides a superior performing and the highest value product. The factory should be consulted for the most recent informa-
tion and for any special characteristics not described or specified.
© Copyright PanjIt International Inc. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
PanJit Internatioal Inc.
http://www.panjit.com.tw email: sales@panjit.com.tw
Ver: June 2001
PAGE 7
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