Datasheet TSP160A, TSP140A, TSP220A, TSP065A, TSP058A Datasheet (PANJIT)

DATA SHEET

TSP058A~TSP320A

AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

FEATURES

• Protects by limiting voltages and shunting surge currents away from sensitive circuits

• Designed for telecommunications applications such as line cards, modems, PBX, FAX,

LAN,VHDSL

• Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68

• Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life

MECHANICAL DATA

• Case: JEDEC DO-15 molded plastic

• Terminals: Plated Axial leads, solderable per
MIL-STD-750, Method 2026

• Polarity: Bi-directional

• Weight: 0.015 ounce, 0.4 gram

SUMMARY ELECTRICAL CHARACTERISTICS

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V V V

A850PST 85 77 5 5 008 051 44 66 61 42

A560PST56885 5 00805193465132

A570PST 57 89 5 5 008 051 73 75 31 02

A090PST0903155 00805143452181

A021PST 021 061 5 5 008 051 23 84 21 71

A041PST04108155 0080519274961

A061PST 061 022 5 5 008 051 82 34 9 51

A091PST09106255 0080518204841

A022PST 022 003 5 5 008 051 72 04 8 41

A572PST57205355 0080517283831

A023PST 023 004 5 5 008 051 72 83 8 31

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µA

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DO-15

.034(.86)
.028(.71)

1.0(25.4) MIN.

.300(7.6)

.230(5.8)

.140(3.6)
.104(2.6)

1.0(25.4) MIN.

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Unit: inch ( mm )

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NOTES:

1. Specific V

values are available by request.

DRM

2. Specific IH values are available by request.

3. All ratings and characteristics are at 25 °C unless otherwise specified.

4. V

applies for the life of the device. I

DRM

5. V

is at 100V/msec, ISC =10Apk, VOC=1KVpk, 10/1000 Waveform

BO1

6. V

is at f = 60 Hz, ISC = 1 A

BO2

, Vac = 1KV

(RMS)

will be in spec during and following operation of the device.

DRM

, RL = 1 KW, 1/2 AC cycle

(RMS)

DATE : SEP.02.2002

PAGE . 1

CAPACITANCE CHARACTERISTICS

F = 1 MHz, Vac = 15 mV

A850PST 44 66 04 15 63 94 33 44 61 42

A560PST93465394137482245132

A570PST 73 75 33 24 92 04 62 53 31 02

A090PST43450393627332232181

A021PST 23 84 82 33 42 13 12 62 21 71

A041PST9274522312038152961

A061PST 82 34 52 72 12 42 81 02 9 51

A091PST8204425202327181841

A022PST 72 04 32 52 91 32 61 81 8 41

A572PST7283324291226171831

A023PST 72 83 32 42 91 22 61 71 8 31

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RATING AND CHARACTERISTIC CURVES

C

O

Fp

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f=1 M

HZ

v =15mV AC

dRMS

O

T=25 C

J

60

50

40

V =0VoltsDC

D

30

20

Capacitance (pF)

V =50 Volts DC

D

10

0
50 100 150 200 250

V

DRM

300 350

Typical Capacitance v.s. Rated Repetitive Off-state Voltage

100

10

TSP220SC

m

1

f=1 M

HZ

v =15mV AC

dRMS

O

T=25 C

J

30

25

TSP220SA

20

15

Capacitance (pF)

10

5

0.1 1 10 100

V Off-state Voltage (V)

D

Typical Capacitance v.s. Off-state Voltage

10A, 10/1000 microseconds

300

250

0.1

0.01

D,

I Off-State Current ( A)

0.001

TSP220SA

TSP220SB

0.0001
0 20 40 60 80 100 120 140

O

T(C)

J

Typical Off-state Current v.s Junction Temperature

DATE : SEP.02.2002

150

200

150

H

I , Holding Current (mA)

100

25 0 25 50 75 100 125

T , Junction Temperature ( C)

J

O

Typical Holding Current

PAGE . 2

RATING AND CHARACTERISTIC CURVES

10A, 10/1000 microseconds

-0.1

o

-1.0

-1.5

-2.0

-2.5

Temperature Coefficient (mA/ C)

-3.0

-25

0 25 50 75 100 125

T , Junction Temperature ( C)

J

O

Typical Holding Current Temperature Coefficient

10A, 10/1000 microseconds

-1.0

o

-1.5

-2.0

-2.5

-3.0

Temperature Coefficient (mA/ C)

-3.5

150 200 250 300 350

T , Junction Temperature ( C)

J

O

Typical Holding Current Temperature Coefficient

.16

o

0.14

DRM

0.12

0.1

0.08

Temperature Coefficient of V ,%/ C

50 100 150 200 250 300 350

Rated V at T =25 C (V)

DRM J

Temperature Coefficient of V

o

DRM

IMPORTANT NOTICE

This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in

the application. It will help the customer's technical experts determine that the device is compatible and interchangeable with similar

devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and

information herein are subject to change without notice. New products and improvements in products and their characterization are

constantly in process. This provides a superior performing and the highest value product. The factory should be consulted for the

most recent information and for any special characteristics not described or specified.

© Copyright PanjIt International Inc. 2001

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and

may changed without notice. No liability will be accepted by the publisher for any consequence of its use.

Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

PanJit Internatioal Inc.

http://www.panjit.com.tw email: [e-mail]

DATE : SEP.02.2002

PAGE . 3

SELECTION GUIDE

Follow these steps to select the proper Thyristor surge protector for your application:

1. Define the operating parameters for the circuit:

• Ambient operating temperature range

• Maximum telephone line operating current (highest battery and shortest copper loop)

• Maximum operating voltage: (Maximum DC bias + peak ringing voltage)

• Maximum surge current

• System voltage damage threshold

• Select device with an off-state voltage rating (V

3. Select surge current ratings (I

PPS

and I

TSM

) ³ those which the application must withstand.

) above the maximum operating voltage at the minimum operating temperature.

DRM

4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the

system.

5. Verify that the maximum breakover voltage of the device is below the system damage threshold.

6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range.

7. Verify that the device's dimensions fit the application's space considerations.

8. Independently evaluate and test the suitability and performance of the device in the application

MAXIMUM SURGE RATINGS (TJ = 25 °C UNLESS OTHERWISE NOTED)

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Notes:

1. Thermal accumulation between successive surge tests is

not allowed.

2. The device under test initially must be in thermal

equilibrium with T

= 25 °C.

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3. Test at 1 cycle, 60 Hz.

4. Surge ratings are non-repetitive because instantaneous

junction temperatures may exceed the maximum rated T

Nevertheless, devices will survive many surge applications

without degradation. Surge capability will not degrade over

a device's typical operating life.

5. Adjust the surge generator for optimum current-wave

accuracy when both voltage and current wave

specifications cannot be exactly met. The current wave is

more important than the voltage wave for accurate surge

evaluation.

6. The waveform is defined as A/B ms where:

A: (Virtual front time) = 1.25 X Rise time = 1.25 X (T

B (Duration time to 50% level of Ipps) = T

1

- T

- Ta)

b

0

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100%

80%

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40%

20%

0%

TbTa T1To

Time

DATE : SEP.02.2002

PAGE . 4

MAXIMUM THERMAL RATINGS

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Notes:

PCB board mounted on minimum foot print.

THERMAL CHARACTERISTICS

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Notes:

The junction to lead thermal resistance represents a minimum limiting value with both leads soldered to a large near-infinite heatsink. The

junction to ambient thermal resistance depends strongly on board mounting conditions and typically is 3 to 6 times higher than the junction

to lead resistance. The data shown is to be used as guideline values for preliminary engineering.

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ELECTRICAL CHARACTERISTICS (TC = 25°C UNLESS OTHERWISE NOTED)

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Notes:

Specific I

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values are available by request.

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V

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DATE : SEP.02.2002

PAGE . 5

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DATE : SEP.02.2002

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PAGE . 6