Datasheet TSP140C, TSP190C, TSP160C, TSP058C, TSP320C Datasheet (PANJIT)

PAGE 1

Ver: June 2001

PRELIMINARY

TSP058SC - TSP320SC

THYRISTOR

TSP058SC - TSP320SC

SURF ACE MOUNT BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

FEATURES

• Protects by limiting voltages and shunting surge currents away from sensitive circuits

• Designed for telecommunications applications such as line cards, modems, PBX, FAX,
LAN,VHDSL

• Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68

• Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life

SUMMARY ELECTRICAL CHARACTERISTICS

SMB/DO-214AA

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etatS-ffOkaeP

egatloV

revokaerB

egatloV

etatS-nO

egatloV

evititepeR

etatS-ffOkaeP

tnerruC

revokaerB

tnerruC

gnidloH

tenrruC

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Vm51=caV,zHM1=f( RMS)

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VDRM VBO I@ BO VT A1@ IDRM I BO IH CO V0@

cd

CO V05@

cd

V V V

µA

Am Am Fp Fp
CS850PST 85 77 5 5 008 051 58 501 53 34
CS560PST56885 5 008051081014304
CS570PST 57 89 5 5 008 051 87 59 03 73
CS090PST0903155 00805107083243
CS021PST 021 061 5 5 008 051 36 97 02 92
CS041PST04108155 00805116879182
CS061PST 061 022 5 5 008 051 85 57 91 72
CS091PST09106255 00805175179162
CS022PST 022 003 5 5 008 051 75 17 81 62
CS572PST57205355 00805165078152
CS023PST 023 004 5 5 008 051 65 07 71 42

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NOTES:

1. Specific V

DRM

values are available by request.

2. Specific IH values are available by request.

3. All ratings and characteristics are at 25 °C unless otherwise specified.

4. V

DRM

applies for the life of the device. I

DRM

will be in spec during and following operation of the device.

5. V

BO1

is at 100V/msec, ISC =10Apk, VOC=1KVpk, 10/1000 Waveform

6. V

BO2

is at f = 60 Hz, ISC = 1 A

(RMS)

, Vac = 1KV

(RMS)

, RL = 1 KΩ, 1/2 AC cycle

PAGE 2

Ver: June 2001

PRELIMINARY

TSP058SC - TSP320SC

THYRISTOR

TSP058SC - TSP320SC

SELECTION GUIDE

Follow these steps to select the proper Thyristor surge protector for your application:

1. Define the operating parameters for the circuit:

• Ambient operating temperature range

• Maximum telephone line operating current (highest battery and shortest copper loop)

• Maximum operating voltage: (Maximum DC bias + peak ringing voltage)

• Maximum surge current

• System voltage damage threshold

• Select device with an off-state voltage rating (V

DRM

) above the maximum operating voltage at the minimum operating temperature.

3. Select surge current ratings (I

PPS

and I

TSM

) ≥ those which the application must withstand.

4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the
system.

5. Verify that the maximum breakover voltage of the device is below the system damage threshold.

6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range.

7. Verify that the device's dimensions fit the application's space considerations.

8. Independently evaluate and test the suitability and performance of the device in the application

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tnerruCegruSetatS-nO

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PPS

I

TSM

evaWtnerruCtiucriC-trohS01/2 µs02/8 µs061/01 µs013/5 µs065/01 µs0001/01 µs

A06

evaWegatloVtiucriC-nepO 01/2 µs 05/2.1 µs 061/01 µs 007/01 µs 065/01 µs 0001/01 µs

eulaV

A005A053A002A051A521A001

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MAXIMUM SURGE RATINGS (TJ = 25 ºC UNLESS OTHERWISE NOTED)

Notes:

1. Thermal accumulation between successive surge tests is
not allowed.

2. The device under test initially must be in thermal
equilibrium with TJ = 25 °C.

3. Test at 1 cycle, 60 Hz.

4. Surge ratings are non-repetitive because instantaneous
junction temperatures may exceed the maximum rated TJ.
Nevertheless, devices will survive many surge applications
without degradation. Surge capability will not degrade over
a device's typical operating life.

5. Adjust the surge generator for optimum current-wave
accuracy when both voltage and current wave
specifications cannot be exactly met. The current wave is
more important than the voltage wave for accurate surge
evaluation.

6. The waveform is defined as A/B ms where:
A: (Virtual front time) = 1.25 X Rise time = 1.25 X (Tb - Ta)
B (Duration time to 50% level of Ipps) = T1 - T

0

0%

20%

40%

60%

80%

100%

Time

% Ipps

TbTa T1To

PAGE 3

Ver: June 2001

PRELIMINARY

TSP058SC - TSP320SC

THYRISTOR

TSP058SC - TSP320SC

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C

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C

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O

C

Notes:

PCB board mounted on minimum foot print.

MAXIMUM THERMAL RATINGS

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O

W/C

THERMAL CHARACTERISTICS

Notes:

The junction to lead thermal resistance represents a minimum limiting value with both leads soldered to a large near-infinite heatsink. The

junction to ambient thermal resistance depends strongly on board mounting conditions and typically is 3 to 6 times higher than the junction

to lead resistance. The data shown is to be used as guideline values for preliminary engineering.

ELECTRICAL CHARACTERISTICS (TC = 25°C UNLESS OTHERWISE NOTED)

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V

D Vdetar=

DRM

I

DRM

5

µA

tnerruCrevokaerB I,zH06=f

SC

V,smrA1= ca R,smrVK1=

L

K1= Ω elcycCA2/1, I OB 008 Am

1tnerruCgnidloH0001/01 µ I,mrofevaws

CS V,A01= CO R,V26=

L

004= Ω IH 051Am

egatloVetatS-nO I

T

003=wT,A1= µ eslup1,s VT 5 V

Notes:
Specific IH values are available by request.

PAGE 4

Ver: June 2001

PRELIMINARY

TSP058SC - TSP320SC

THYRISTOR

TSP058SC - TSP320SC

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V

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I

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(tnerrucI

T)

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segatlov

IDRM tnerruCetatS-ffOkaePevititepeR

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Vfo

DRM

IPPS tnerruceslupkaePevititepeR-noN

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Vwoleb(egatlovfoesirfoetarmumixamehT DRM esuactonlliwtaht)

.etats-noehtotetats-ffoehtmorfgnihctiws

VBO

VBR

VDRM

VT

IPPS

ITSM
IT

IBO

IH

IBR

IDRM

_

V

+V

_

I

+I

PAGE 5

Ver: June 2001

PRELIMINARY

TSP058SC - TSP320SC

THYRISTOR

TSP058SC - TSP320SC

CAPACITANCE CHARACTERISTICS

F = 1 MHz, Vac = 15 mV

rms

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C

O

Fp

cdV0 cdV1 cdV2 cdV5 cdV05

.pyT .xaM .pyT .xaM .pyT .xaM .pyT .xaM .pyT .xaM
CS850PST 58 501 57 09 96 38 06 07 53 34
CS560PST081011768569765664304
CS570PST 87 59 56 08 95 37 05 06 03 73
CS090PST07088566257534053243
CS021PST 36 97 25 06 74 85 93 54 02 92
CS041PST16870585546563449182
CS061PST 85 57 84 65 34 35 43 34 91 72
CS091PST75177455249433249162
CS022PST 75 17 74 55 24 94 33 24 81 62
CS572PST65076455249423248152
CS023PST 65 07 64 55 14 94 23 24 71 42

MECHANICAL DATA

SMB / DO-214AA

Unit: inch ( mm )

.075 (1.91)

.083 (2.11)

.130 (3.30)

.155 (3.94)

.160 (4.06)

.185 (4.70)

.006 (.152)

.012 (.305)

.002(.051)

.008(.203)

.200 (5.08)

.220 (5.59)

.030 (0.76)

.050 (1.27)

.083 (2.13)

.096 (2.44)

• Case: JEDEC DO-214AA molded plastic

• Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026

• Polarity: Bi-directional Standard packaging: 12mm tape
(EIA-481)

• Weight: 0.003 ounce, 0.093 gram

PAGE 6

Ver: June 2001

PRELIMINARY

TSP058SC - TSP320SC

THYRISTOR

TSP058SC - TSP320SC

PanJit logo
Last digit of calendar year

Y-

Month

M-

1st Line:

PJ YM
058C

PJ-

2nd line:

Marking code

DEVICE MARKING CODE

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CS850PST C850
CS560PSTC560
CS570PST C570
CS090PSTC090
CS021PST C021
CS041PSTC041
CS061PST C061
CS091PSTC091
CS022PST C022
CS572PSTC572
CS023PST C023

ORDER & PACKING INFORMATION

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PAGE 7

Ver: June 2001

PRELIMINARY

TSP058SC - TSP320SC

THYRISTOR

TSP058SC - TSP320SC

© Copyright PanjIt International Inc. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may changed without notice. No liability will be
accepted by the publisher for any consequence of its use.
Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

PanJit Internatioal Inc.

http://www.panjit.com.tw email: [e-mail]

TYPICAL CAPACITANCE V.S. OFF-STATE VOLTAGE

f=1 MHZ

v =15mV AC

dRMS

T=25 C

J

O

0.1

1

10 100

10

20

30

40

50

60

70

Capacitance (pF)

V Off-state Voltage (V)

D

TSP075SC

TSP120SC

TSP140SC

TSP190SC

TYPICAL CAPACITANCE V.S. RATED REPETITIVE OFF-STATE VOLTAGE

f=1 MHZ

V =0VoltsDC

D

T=25 C

J

O

v =15mV AC

dRMS

50 100 150 200 250 300 350

20

30

40

50

60

70

80

90

Cseriesdevice

Bseriesdevice

Aseriesdevice

Capacitance (pF)

V (V)

DRM

0 20 40 60 80 100 120 140

0.01

0.1

1

10

100

150

0.001

0.0001

I Off-State Current ( A)

D,

m

T(C)

J

O

TYPICAL OFF-STATE CURRENT V.S JUNCTION TEMPERATURE

TSP220SB

TSP220SB

TSP220SC

RATING AND CHARACTERISTIC CURVES

IMPORTANT NOTICE

This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the

application. It will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices

made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information

herein are subject to change without notice. New products and improvements in products and their characterization are constantly in

process. This provides a superior performing and the highest value product. The factory should be consulted for the most recent informa-

tion and for any special characteristics not described or specified.