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TSML3700
Vishay Telefunken
GaAs/GaAlAs Infrared Emitting Diode in SMT Package
Description
TSML3700 is an infrared emitting diode in GaAlAs on
GaAs technology in a miniature PL–CC–2 SMD package.
It has been designed to meet the increasing demand
on optoelectronic devices for surface mounting.
The package consists of a lead frame which is surrounded with a white thermoplast. The reflector inside
the package is filled up with clear epoxy.
This new package achieves an improvement of 100%
in radiant intensity, compared with the old SOT–23
package.
94 8553
Features
D
SMT IRED with extra high radiant power
D
Low forward voltage
D
Compatible with automatic placement equipment
D
EIA and ICE standard package
D
Suitable for infrared, vapor phase and wavesolder process
D
Available in 8 mm tape
D
Suitable for pulse current operation
D
Extra wide angle of half intensity ϕ = ± 60
D
Peak wavelength
D
High reliability
D
Matching to TEMT3700 phototransistor
l
= 925 nm
p
°
Applications
Infrared source in tactile keyboards
IR diode in low space applications
Matching with phototransistor TEMT3700 in reflective sensors
High performance PCB mounted infrared sensors
High power infrared emitter for miniature light barriers
Document Number 81034
Rev. 3, 20-May-99
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1 (6)
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TSML3700
g
y
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature t x10sec T
Thermal Resistance Junction/Ambient R
R
F
FM
FSM
V
j
amb
stg
sd
thJA
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 1 A, tp = 100 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I
IF = 1 A, tp = 100 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of
f
e
IF = 100 mA TK
F
F
VF
R
j
e
e
f
2.5 7 mW/sr
e
f
e
Angle of Half Intensity ϕ ±60 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 20 mA t
IF = 1 A t
Fall Time IF = 20 mA t
IF = 1 A t
l
Dl
p
l
p
r
r
f
f
1.3 1.7 V
2.2 V
–1.3 mV/K
20 pF
60 mW/sr
32 mW
–0.8 %/K
925 nm
50 nm
0.2 nm/K
800 ns
500 ns
800 ns
500 ns
5 V
100 mA
200 mA
1 A
170 mW
100
–55...+100
–55...+100
260
450 K/W
100
°
°
°
°
m
C
C
C
C
A
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2 (6) Rev. 3, 20-May-99
Document Number 81034
Page 3
TSML3700
Vishay Telefunken
Typical Characteristics (T
= 25_C unless otherwise specified)
amb
250
200
150
R
thJA
100
V
50
P – Power Dissipation ( mW )
94 8029 e
0
020406080
T
– Ambient Temperature ( °C )
amb
100
Figure 1. Power Dissipation vs. Ambient Temperature
125
100
75
R
thJA
4
10
3
10
2
10
tp = 100 ms
t
/T = 0.001
p
1
10
F
I – Forward Current ( mA )
0
10
0123
V
94 7952 e
– Forward Voltage ( V )
F
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
IF = 10 mA
1.0
4
50
F
I – Forward Current ( mA )
25
94 7916 e
0
020406080
T
– Ambient Temperature ( °C )
amb
100
Figure 2. Forward Current vs. Ambient Temperature
10000
T
v
60°C
amb
0.02
1000
tp/T=0.005
0.01
0.05
100
0.2
0.5
DC
10
F
I – Forward Current ( mA )
0.1
1
0.01 0.1 1 10
t
95 9985
– Pulse Length ( ms )
p
100
Figure 3. Pulse Forward Current vs. Pulse Duration
0.9
Frel
0.8
V – Relative Forward Voltage
0.7
020406080
T
94 7990 e
– Ambient Temperature ( °C )
amb
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
100
10
1
e
I – Radiant Intensity ( mW/sr )
0.1
0
10
1
10
2
10
3
10
IF – Forward Current ( mA )15903
Figure 6. Radiant Intensity vs. Forward Current
100
10
4
Document Number 81034
Rev. 3, 20-May-99
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TSML3700
Vishay Telefunken
1000
100
10
– Radiant Power ( mW )
1
e
F
0.1
0
10
1
10
2
10
3
10
IF – Forward Current ( mA )94 8740
Figure 7. Radiant Power vs. Forward Current
1.6
1.2
IF = 20 mA
F
0.8
e rel e rel
I ;
0.4
0
–10 10 500 100
T
94 7993 e
– Ambient Temperature ( °C )
amb
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
10
140
1.25
1.0
0.75
0.5
– Relative Radiant Power
e rel
0.25
F
IF = 100 mA
0
4
875 925
12757
l
– Wavelength ( nm )
975
Figure 9. Relative Radiant Power vs. Wavelength
0°
10°20
°
30°
40°
1.0
0.9
0.8
e rel
0.7
I – Relative Radiant Intensity
0.4 0.2 0 0.2 0.4
0.6
94 8013 e
50°
60°
70°
80°
0.6
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
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Document Number 81034
4 (6) Rev. 3, 20-May-99
Page 5
Dimensions in mm
TSML3700
Vishay Telefunken
95 11314
Document Number 81034
Rev. 3, 20-May-99
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5 (6)
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TSML3700
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
6 (6) Rev. 3, 20-May-99
Document Number 81034
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