Datasheet tsm2302_a07 Datasheet

TSM2302

20V N-Channel MOSFET

1/6 Version: A07

SOT-23

Features

● Advance Trench Process Technology

● High Density Cell Design for Ultra Low On-resistance

Application

● Load Switch

● PA Switch

Ordering Information

Part No.

Package

Packing

TSM2302CX RF

SOT-23

3Kpcs / 7” Reel

Absolute Maximum Rating (Ta = 25

o

C unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

±8

V

Continuous Drain Current, VGS @4.5V.

ID

2.8

A

Pulsed Drain Current, VGS @4.5V

IDM 8 A

Continuous Source Current (Diode Conduction)

a,b

IS

1.0

A

Ta = 25oC

0.9

Maximum Power Dissipation

Ta = 75oC

PD

0.57

W

Operating Junction Temperature

TJ

+150

o

C

Operating Junction and Storage Temperature Range

TJ, T

STG

-55 to +150

o

C

Thermal Performance

Parameter

Symbol

Limit

Unit

Junction to Case Thermal Resistance

RӨJF

75

o

C/W

Junction to Ambient Thermal Resistance (PCB mounted)

RӨJA

250

o

C/W

Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec.

PRODUCT SUMMARY

VDS (V)

R

DS(on)

(mΩ)

ID (A)

65 @ V

GS

= 4.5V

2.8 20

95 @ V

GS

= 2.5V

2.0

Block Diagram

N-Channel MOSFET

Pin Definition:

1. Gate

2. Source

3. Drain

TSM2302

20V N-Channel MOSFET

2/6 Version: A07

Electrical Specifications

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V

GS

= 0V, ID = 250µA

BV

DSS

20

--

V

Gate Threshold Voltage

V

DS

= VGS, ID = 250µA

V

GS(TH)

0.65

0.95

1.2

V

Gate Body Leakage

VGS = ±8V, VDS = 0V

I

GSS

--

±100

nA

Zero Gate Voltage Drain Current

V

DS

= 16V, VGS = 0V

I

DSS

--

1.0

µA

On-State Drain Current

V

DS

 5V, V

GS

= 4.5V

I

D(ON)

6

--

A

V

GS

= 4.5V, ID = 2.8A

--

40

65 Drain-Source On-State Resistance V

GS

= 2.5V, ID = 2.0A

R

DS(ON)

--

50

95

mΩ

Forward Transconductance

V

DS

= 5V, ID = 2.8A

gfs

--

6.5

--

S

Diode Forward Voltage

IS = 1.6A, VGS = 0V

VSD

--

0.76

1.2

V

Dynamicb

Total Gate Charge

Qg

--

3.69

--

Gate-Source Charge

Qgs

--

0.7

--

Gate-Drain Charge

V

DS

= 6V, ID = 2.8A,

V

GS

= 4.5V

Qgd

--

1.06

--

nC

Input Capacitance

C

iss

--

427.12

--

Output Capacitance

C

oss

--

80.56

--

Reverse Transfer Capacitance

V

DS

= 6V, VGS = 0V,

f = 1.0MHz

C

rss

--

57

--

pF

Switchingc

Turn-On Delay Time

t

d(on)

--

6.16

--

Turn-On Rise Time

tr

--

7.56

--

Turn-Off Delay Time

t

d(off)

--

16.61

--

Turn-Off Fall Time

V

DD

= 6V, RL = 10Ω,

ID = 1A, V

GEN

= 4.5V,

RG = 6Ω

tf

--

4.07

--

nS

Notes: a. pulse test: PW 300µS, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature.

TSM2302

20V N-Channel MOSFET

3/6 Version: A07

Electrical Characteristics Curve (Ta = 25

o

C, unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

TSM2302

20V N-Channel MOSFET

4/6 Version: A07

Electrical Characteristics Curve (Ta = 25

o

C, unless otherwise noted)

On-Resistance vs. Gate-Source Voltage

Threshold Voltage

Single Pulse Power

Normalized Thermal Transient Impedance, Junction-to-Ambient

TSM2302

20V N-Channel MOSFET

5/6 Version: A07

SOT-23 Mechanical Drawing

Marking Diagram

02

= Device Code

Y

= Year Code

M

= Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec)

L

= Lot Code

SOT-23 DIMENSION

MILLIMETERS

INCHES

DIM

MIN

MAX

MIN

MAX.

A

0.95 BSC

0.037 BSC

A1

1.9 BSC

0.074 BSC

B

2.60

3.00

0.102

0.118

C

1.40

1.70

0.055

0.067

D

2.80

3.10

0.110

0.122

E

1.00

1.30

0.039

0.051

F

0.00

0.10

0.000

0.004

G

0.35

0.50

0.014

0.020

H

0.10

0.20

0.004

0.008

I

0.30

0.60

0.012

0.024

J

5º

10º

5º

10º

TSM2302

20V N-Channel MOSFET

6/6 Version: A07

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