Datasheet TSL252R, TSL251R, TSL250R Datasheet (TAOS)

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TSL250R, TSL251R, TSL252R
LIGHTTOVOLTAGE OPTICAL SENSORS
TAOS028A – MAY 2001
Monolithic Silicon IC Containing
PACKAGE
(FRONT VIEW)
Feedback Components
Converts Light Intensity to a Voltage High Irradiance Responsivity, Typically 137
mV/(W/cm2) at p = 635 nm (TSL250R)
321
Compact 3-Lead Clear Plastic Package Single Voltage Supply Operation
Low Dark (Offset) Voltage....10mV Max
Low Supply Current......1.1 mA Typical
Wide Supply-Voltage Range.... 2.7 V to 5.5 V
Replacements for TSL250, TSL251, and
TSL252
GND
Description
The TSL250R, TSL251R, and TSL252R are light-to-voltage optical sensors, each combining a photodiode and a transimpedance amplifier (feedback resistor = 16 M, 8 MΩ, and 2.8 M respectively) on a single monolithic IC. Output voltage is directly proportional to the light intensity (irradiance) on the photodiode. These devices have improved amplifier offset-voltage stability and low power consumption and are supplied in a 3-lead clear plastic sidelooker package with an integral lens
DD
OUTV
Functional Block Diagram
– +
Terminal Functions
TERMINAL
NAME NO.
GND 1 Ground (substrate). All voltages are referenced to GND. OUT 3 Output voltage V
DD
2 Supply voltage
Voltage Output
DESCRIPTION
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Texas Advanced Optoelectronic Solutions Inc.
800 Jupiter Road, Suite 205 Plano, TX 75074 (972) 673-0759
Copyright 2001, TAOS Inc.
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TSL250R, TSL251R, TSL252R
TEST
VOOut ut voltage
V
E
e
µW/cm
T
coefficient of
E
e
µW/cm
g
E
e
196 µW/cm
Irradiance
DD
y
LIGHTTOVOLTAGE OPTICAL SENSORS
TAOS028A – MAY 2001
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, VDD (see Note 1) 6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, IO ±10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current at (or below) 25°C (see Note 2) 5 s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, TA –25°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
–25°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 240°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only , and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltages are with respect to GND.
2. Output may be shorted to supply.
Recommended Operating Conditions
MIN NOM MAX UNIT
Supply voltage, V Operating free-air temperature, T
DD
A
2.7 5.5 V 0 70 °C
Electrical Characteristics at VDD = 5 V , TA = 25°C, λp = 635 nm, RL = 10 k (unless otherwise noted) (see Notes 3, 4, and 5)
TEST
PARAMETER
VDDark voltage Ee = 0 0 4 10 0 4 10 0 4 10 mV
Maximum output
V
OM
voltage
VOOutput voltage
p
emperature
coefficient of
α
vo
output voltage (VO)
Irradiance
N
e
responsivity
I
Supply current
DD
NOTES: 3. Measurements are made with RL = 10 k between output and ground.
4. Optical measurements are made using small-angle incident radiation from an LED optical source.
5. The input irradiance Ee is supplied by an AlInGaP LED with peak wavelength λp = 635 nm
6. The input irradiance Ee is supplied by a GaAlAs LED with peak wavelength λp = 880 nm
7. Irradiance responsivity is characterized over the range VO = 0.05 to 2.9 V. The best-fit straight line of Output Voltage VO versus irradiance Ee over this range will typically have a positive extrapolated VO value for Ee = 0.
CONDITIONS
VDD = 4.5 V 3.0 3.3 3.0 3.3 3.0 3.3 V Ee = 14.6 µW/cm
Ee = 38.5 µW/cm Ee = 196 µW/cm
Ee = 14.6 µW/cm2,
= 14.6
TA = 0°C to 70°C Ee = 38.5 µW/cm2,
= 38.5
TA = 0°C to 70°C Ee = 196 µW/cm2,
=
TA = 0°C to 70°C
λp = 635 nm,
See Notes 5 and 7
λp = 880 nm,
See Notes 6 and 7 Ee = 14.6 µW/cm Ee = 38.5 µW/cm Ee = 196 µW/cm
2 2
2
,
,
,
2 2
2
TSL250R TSL251R TSL252R
MIN TYP MAX MIN TYP MAX MIN TYP MAX
1.5 2 2.5
1.5 2 2.5
1.5 2 2.5
1.6 mV/°C
0.08 %/°C
1.6 mV/°C
0.08 %/°C
1.6 mV/°C
0.08 %/°C
137 52 10.2
127 48 9.4
1.1 1.7
1.1 1.7
1.1 1.7
UNIT
V
mV/(µW/cm2)
mA
Copyright 2001, TAOS Inc.
2
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TSL250R, TSL251R, TSL252R
LIGHTTOVOLTAGE OPTICAL SENSORS
TAOS028A – MAY 2001
Dynamic Characteristics at TA = 25°C (see Figure 1)
PARAMETER TEST CONDITIONS
trOutput pulse rise time VDD = 5 V, λp = 635 nm 260 70 7 µs tfOutput pulse fall time VDD = 5 V, λp = 635 nm 260 70 7 µs
VnOutput noise voltage
VDD = 5 V, f = 1000 Hz
Ee = 0,
PARAMETER MEASUREMENT INFORMATION
V
DD
Pulse
Generator
(see Note A)
NOTES: A. The input irradiance is supplied by a pulsed AlInGaP light-emitting diode with the following characteristics: λp = 635 nm,
LED
TSL25xR
TEST CIRCUIT
tr < 1 µs, tf < 1 µs.
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi 1 M, Ci 20 pF.
2
– +
1
TSL250R TSL251R TSL252R
MIN TYP MAX MIN TYP MAX MIN TYP MAX
0.8 0.7 0.6 µV/Hz
E
e
Input
90%
t
r
90%
10%
3
R
Output
L
Output
(see Note B)
10%
VOLTAGE WAVEFORM
UNIT
t
f
Figure 1. Switching Times
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TSL250R, TSL251R, TSL252R LIGHTTOVOLTAGE OPTICAL SENSORS
TAOS028A – MAY 2001
TYPICAL CHARACTERISTICS
OUTPUT VOLTAGE
vs
IRRADIANCE
10
VDD = 5 V
λp = 635 nm
RL = 10 k TA = 25°C
TSL251R
PHOTODIODE SPECTRAL RESPONSIVITY
1.2 TA = 25°C
Normalized to
1
635 nm
1
– Output Voltage – V
O
V
0.01
TSL250R
0.1
0.1 1 10 100 E
– Irradiance – µW/cm
e
2
Figure 2
MAXIMUM OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
5
RL = 10 k TA = 25°C
4
TSL252R
0.8
0.6
0.4
Relative Responsivity
0.2
0
300 500 700 900
λ – Wavelength – nm
Figure 3
SUPPLY CURRENT
vs
OUTPUT VOLTAGE
1.6 VDD = 5 V
RL = 10 k TA = 25°C
1.4
1100
3
2
– Maximum Output Voltage – V
1
OM
V
0
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4 4.5 5
VDD – Supply Voltage – V
Figure 4
1.2
1
– Supply Current – mA
DD
I
0.8
5.52.5 3 3.5
0.6
012 3
VO – Output Voltage – V
4
Figure 5
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TYPICAL CHARACTERISTICS
NORMALIZED OUTPUT VOLTAGE
vs
ANGULAR DISPLACEMENT
1
TSL250R, TSL251R, TSL252R
LIGHTTOVOLTAGE OPTICAL SENSORS
TAOS028A – MAY 2001
0.8
0.6
0.4
Normalized Output Voltage
0.2
O
V –
0
80° 60° 40° 20° 0° 80°60°40°20°
θ – Angular Displacement
TSL251R
Optical Axis
Figure 6
TSL252R
TSL250R
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TSL250R, TSL251R, TSL252R LIGHTTOVOLTAGE OPTICAL SENSORS
TAOS028A – MAY 2001
MECHANICAL INFORMATION
The device is supplied in a clear plastic three-lead package. The integrated photodiode active area is typically 1,0 mm2 (0.0016 in2) for TSL250R, 0,5 mm2 (0.00078 in2) for the TSL251R, and 0,26 mm2 (0.0004 in2) for the TSL252R.
0.072 (1,84)
0.189 (4,80)
0.173 (4,40)
0.165 (4,20)
0.150 (3,80)
0.071 (1,80)
0.110 (2,80)
0.016 (0,40)
0.071 (1,8)
0.189 (4,80)
0.173 (4,40)
0.057 (1,44)
0.032 (0,80)
0.016 (0,40)
R 0.035 (0,90)
0.079 (2,00)
0.039 (1,00)
0.027 (0,70)
0.079 (2,00)
0.026 (0,65)
0.018 (0,45)
0.079 (2,00)
Figure 7. Package Configuration
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice. C. All dimensions apply before solder dip. D. Package body is a clear nonfilled optically transparent material E. Index of refraction of clear plastic is 1.55.
0.029 (0,75)
0.102 (2,6)
0.630 (16,00)
0.531 (13,50)
0.018 (0,45)
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TSL250R, TSL251R, TSL252R
LIGHTTOVOLTAGE OPTICAL SENSORS
TAOS028A – MAY 2001
PRODUCTION DATA — information in this document is current at publication date. Products conform to specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard warranty. Production processing does not necessarily include testing of all parameters.
NOTICE
Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems.
TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages.
TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY RESUL T I N PERSONAL INJURY OR DEATH. USE OF T AOS PRODUCTS IN LIFE SUPPOR T SYSTEMS IS EXPRESSLY UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK.
TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are trademarks of Texas Advanced Optoelectronic Solutions Incorporated.
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TSL250R, TSL251R, TSL252R LIGHTTOVOLTAGE OPTICAL SENSORS
TAOS028A – MAY 2001
Copyright 2001, TAOS Inc.
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