1280 × 1 Sensor-Element Organization
400 Dot-Per-Inch (DPI) Sensor Pitch
High Linearity and Uniformity
Wide Dynamic Range...4000:1 (72 dB)
Output Referenced to Ground
Low Image Lag ... 0.5% Typ
Operation to 8 MHz
Single 3-V to 5-V Supply
Rail-to-Rail Output Swing (AO)
No External Load Resistor Required
Replacement for TSL1410
Description
The TSL1410R linear sensor array consists of t w o
sections of 640 photodiodes, each with
associated charge amplifier circuitry, aligned to
form a contiguous 1280 × 1 pixel array. The device
incorporates a pixel data-hold function that
provides simultaneous-integration start and stop
times for all pixels. The pixels measure 63.5 µm by
55.5 µm with 63.5-µm center-to-center spacing
and 8-µm spacing between pixels. Operation is
simplified by internal logic that requires only a
serial-input (SI) pulse and a clock.
The device is intended for use in a wide variety of applications including mark and code reading, OCR and
contact imaging, edge detection and positioning, and optical encoding.
Functional Block Diagram (each section)
Pixel 1 (641)
3, 9
Hold
4,10
CLK640-Bit Shift Register (2 each)
2,8
SI
Integrator
Reset
_
+
Sample/
Output
Switch Control Logic
Pixel
2
(642)
Pixel
3
(643)
Q3Q2Q1Hold
Pixel
640
(1280)
Q640 (Q1280)
Analog
Bus
Output
Buffer
Gain
Trim
13
6, 12
7, 11
V
DD
AO
5
GND
SO
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Texas Advanced Optoelectronic Solutions Inc.
800 Jupiter Road, Suite 205 Plano, TX 75074 (972) 673-0759
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TSL1410R
1280 × 1 LINEAR SENSOR ARRAY WITH HOLD
TAOS043 – AUGUST 2002
Terminal Functions
TERMINAL
NAMENO.
AO16OAnalog output, section 1.
AO212OAnalog output, section 2.
CLK14IClock, section 1. CLK1 controls charge transfer, pixel output, and reset.
CLK210IClock, section 2. CLK2 controls charge transfer, pixel output, and reset.
GND5Ground (substrate). All voltages are referenced to GND.
HOLD13I
HOLD29IHold signal. HOLD2 shifts pixel data to parallel buffer. HOLD2 is normally connected to SI2 in parallel mode.
SI12ISerial input (section 1). SI1 defines the start of the data-out sequence.
SI28ISerial input (section 2). SI2 defines the start of the data-out sequence.
SO17OSerial output (section 1). SO1 provides a signal to drive the SI2 input in serial mode.
SO211O
V
DD
V
PP
I/ODESCRIPTION
Hold signal. HOLD1 shifts pixel data to parallel buffer. HOLD1 is normally connected to SI1 and HOLD2 in
serial mode and to SI1 in parallel mode.
Serial output (section 2). SO2 provides a signal to drive the SI input of another device for cascading or as an
end-of-data indication.
13Supply voltage for both analog and digital circuitry.
1Normally grounded.
Detailed Description
The sensor consists of 1280 photodiodes, called pixels, arranged in a linear array. Light energy impinging on a pixel
generates photocurrent that is then integrated by the active integration circuitry associated with that pixel.
During the integration period, a sampling capacitor connects to the output of the integrator through an analog switch. The
amount of charge accumulated at each pixel is directly proportional to the light intensity on that pixel and the integration time.
The output and reset of the integrators are controlled by a 640-bit shift register and reset logic. An output cycle is initiated
by clocking in a logic 1 on SI. Another signal, called HOLD, is generated from the rising edge of SI1 when SI1 and HOLD1
are connected together. This causes all 640 sampling capacitors to be disconnected from their respective integrators and
starts an integrator reset period. As the SI pulse is clocked through the shift register, the charge stored on the sampling
capacitors is sequentially connected to a charge-coupled output amplifier that generates a voltage on analog output AO.
The integrator reset period ends 18 clock cycles after the SI pulse is clocked in. Then the next integration period begins.
On the 640th clock rising edge, the SI pulse is clocked out on the SO1 pin (section 1) and becomes the SI pulse for section
2 (when SO1 is connected to SI2). The rising edge of the 641st clock cycle terminates the SO1 pulse, and returns the analog
output AO of section 1 to high-impedance state. Similarly, SO2 is clocked out on the 1280th clock pulse. Note that a 1281st
clock pulse is needed to terminate the SO2 pulse and return AO of Section 2 to the high-impedance state. Sections 1 and
2 may be operated in parallel or in serial fashion.
AO is an op amp-type output that does not require an external pull-down resistor. This design allows a rail-to-rail
output voltage swing. With V
for saturation light level. When the device is not in the output phase, AO is in a high-impedance state.
The voltage developed at analog output (AO) is given by:
where:
V
out
V
drk
R
E
e
t
int
is the analog output voltage for white condition
is the analog output voltage for dark condition
is the device responsivity for a given wavelength of light given in V/(µJ/cm2)
e
is the incident irradiance in µW/cm
is integration time in seconds
= 5 V, the output is nominally 0 V for no light input, 2 V for normal white level, and 4.8 V
DD
V
out
= V
+ (Re) (Ee)(t
drk
2
int
)
A 0.1 µF bypass capacitor should be connected between VDD and ground as close as possible to the device.
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TSL1410R
1280 × 1 LINEAR SENSOR ARRAY WITH HOLD
TAOS043 – AUGUST 2002
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Recommended Operating Conditions
MINNOMMAXUNIT
Supply voltage, V
Input voltage, V
High-level input voltage, V
Low-level input voltage, V
Wavelength of light source, λ4001100nm
Clock frequency, f
Sensor integration time, Serial, t
Sensor integration time, Parallel, t
Setup time, serial input, t
Hold time, serial input, t
Operating free-air temperature, T
Load capacitance, C
Load resistance, R
NOTE 1: SI must go low before the rising edge of the next clock pulse.
DD
I
IH
IL
clock
int
int
su(SI)
(see Note 1)0ns
h(SI)
A
L
L
355.5V
0V
VDD × 0.7V
0VDD × 0.3V
58000kHz
0.162100ms
0.082100ms
20ns
070°C
300Ω
DD
DD
330pF
V
V
†
2
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TSL1410R
1280 × 1 LINEAR SENSOR ARRAY WITH HOLD
TAOS043 – AUGUST 2002
Electrical Characteristics at f
= 330 Ω, Ee = 12.5 µW/cm2 (unless otherwise noted) (see Note 2)
R
L
= 1 MHz, VDD = 5 V, TA = 25°C, λp = 640 nm, t
clock
= 5 ms,
int
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
V
V
Analog output voltage (white, average over 1280 pixels)See Note 31.622.4V
out
Analog output voltage (dark, average over 1280 pixels)Ee = 000.10.3V
drk
PRNU Pixel response nonuniformitySee Note 4±20%
Nonlinearity of analog output voltageSee Note 5±0.4%
Output noise voltageSee Note 61mVrms
R
V
SESaturation exposure
DSNU Dark signal nonuniformityAll pixels, E
NOTES: 2. All measurements made with a 0.1 µF capacitor connected between VDD and ground.
3. The array is uniformly illuminated with a diffused LED source having a peak wavelength of 640 nm.
4. PRNU is the maximum difference between the voltage from any single pixel and the average output voltage from all pixels of the
device under test when the array is uniformly illuminated at the white irradiance level. PRNU includes DSNU.
5. Nonlinearity is defined as the maximum deviation from a best-fit straight line over the dark-to-white irradiance levels, as a percent
of analog output voltage (white).
6. RMS noise is the standard deviation of a single-pixel output under constant illumination as observed over a 5-second period.
7. R
8. SE(min) = [V
e(min)
= [V
out(min)
sat(min)
– V
– V
drk(max)
drk(min)
] ÷ (Ee × t
] ×〈Ee × t
int
)
int
) ÷[V
out(max)
– V
drk(min)
]
9. DSNU is the difference between the maximum and minimum output voltage for all pixels in the absence of illumination.
10. Image lag is a residual signal left in a pixel from a previous exposure. It is defined as a percent of white-level signal remaining after
a pixel is exposed to a white condition followed by a dark condition:
IL
V
V
out (white)
out (IL)
V
V
drk
100
drk
V/
(µJ/cm2)
nJ/cm
mA
10µA
V
2
Timing Requirements (see Figure 1 and Figure 2)
t
t
t
t
tr, t
NOTES: 11. Input pulses have the following characteristics: tr = 6 ns, tf = 6 ns.
Copyright 2002, TAOS Inc.
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Setup time, serial input (see Note 11)20ns
su(SI)
Hold time, serial input (see Note 11 and Note 12)0ns
h(SI)
Propagation delay time, SO50ns
pd(SO)
Pulse duration, clock high or low50ns
w
Input transition (rise and fall) time0500ns
f
12. SI must go low before the rising edge of the next clock pulse.
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TSL1410R
1280 × 1 LINEAR SENSOR ARRAY WITH HOLD
TAOS043 – AUGUST 2002
Dynamic Characteristics over recommended ranges of supply voltage and operating free-air
temperature (see Figures 7 and 8)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
t
t
Analog output settling time to ±1%RL = 330 Ω, CL = 50 pF120ns
s
Propagation delay time, SO1, SO250ns
pd(SO)
TYPICAL CHARACTERISTICS
CLK
SI1
Internal
Reset
18 Clock Cycles
tint
Integration
CLK
t
SI
SO
Not IntegratingIntegrating
1281 Clock Cycles
AO
Hi-ZHi-Z
Figure 1. Timing Waveforms (serial connection)
t
w
12640641
su(SI)
50%
t
h(SI)
t
s
t
pd(SO)
t
pd(SO)
2.5 V
5 V
0 V
5 V
0 V
AO
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Pixel 1
Pixel 640
Figure 2. Operational Waveforms (Each Section)
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TSL1410R
1280 × 1 LINEAR SENSOR ARRAY WITH HOLD
TAOS043 – AUGUST 2002
TYPICAL CHARACTERISTICS
PHOTODIODE SPECTRAL RESPONSIVITY
1
TA = 25°C
0.8
0.6
0.4
NORMALIZED IDLE SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
2
1.5
1
Normalized Responsivity
0.2
0
300500700900
λ – Wavelength – nm
Figure 3
WHITE OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
2
VDD = 5 V
t
= 0.5 ms to 15 ms
int
1.5
1
— Output Voltage — V
out
V
0.5
0.5
— Normalized Idle Supply Current
DD
I
11004006008001000
0
01030407060
20
TA – Free-Air Temperature – °C
50
Figure 4
DARK OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
0.10
t
= 0.5 ms
int
t
int
t
= 15 ms
int
t
int
t
= 2.5 ms
int
= 1 ms
= 5 ms
0.09
0.08
— Output Voltage
out
V
0.07
VDD = 5 V
0
0103040706020
TA – Free-Air Temperature – °C
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Figure 5
50
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0.06
0103040706020
50
TA – Free-Air Temperature – °C
Figure 6
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1280 × 1 LINEAR SENSOR ARRAY WITH HOLD
TYPICAL CHARACTERISTICS
TSL1410R
TAOS043 – AUGUST 2002
SETTLING TIME
vs.
LOAD
600
500
400
300
200
Settling Time to 1% — ns
100
VDD = 3 V
V
= 1 V
out
0
02004006008001000
RL — Load Resistance –
Figure 7
470 pF
220 pF
100 pF
10 pF
SETTLING TIME
vs.
LOAD
600
500
400
300
200
Settling Time to 1% — ns
100
VDD = 5 V
V
= 1 V
out
0
02004006008001000
RL — Load Resistance –
Figure 8
470 pF
220 pF
100 pF
10 pF
APPLICATION INFORMATION
1
2
3
4
5
6
7
8
9
10
11
12
13
SERIALPARALLEL
V
DD
SI1/HOLD1/HOLD2
CLK1 and CLK2
SO1
SI2
SO2
AO1/AO2
Figure 9. Operational Connections
1
2
3
4
5
6
7
8
9
10
11
12
13
SI1/HOLD1
CLK1 and CLK2
AO1
SO1
SI2/HOLD2
SO2
AO2
V
DD
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TSL1410R
1280 × 1 LINEAR SENSOR ARRAY WITH HOLD
TAOS043 – AUGUST 2002
MECHANICAL DATA
TOP VIEW
0.100 (2,54) x 12 = 1.2 (30,48))
(Tolerance Noncumulative)
0.270 (0,69)
0.158 (4,01)
0.150 (3,81)
To Pixel 1
0.242 (6,15)
0.222 (5,64)
0.090 (2,28)
DIA (2 Places)
0.121 (0,53)
13 Places
DETAIL A
0.100 (2,54)
BSC
113
3.535(89,79)
3.525 (89,54)
3.705 (94,11)
3.695 (93,85)
0.075 (0,191)
Centerline of Pixels is on the
Centerline of Mounting Holes
1.170 (29,72)
1.160 (29,46)
0.510 (12,95)
0.490 (12,45)
0.130 (3,30)
0.120 (3,05)
(Index of Refraction = 1.52)
Linear Array
0.048 (1,22)
0.038 (0,97)
Bonded Chip
Bypass Cap
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Pixel centers are in line with center line of mounting holes.
Cover Glass
Cover Glass
DETAIL A
Figure 10. TSL1410R Mechanical Specifications
0.015 (0,38) Typical Free Area
0.027 (0,690)
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TSL1410R
1280 × 1 LINEAR SENSOR ARRAY WITH HOLD
TAOS043 – AUGUST 2002
PRODUCTION DATA — information in this document is current at publication date. Products conform to
specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard
warranty. Production processing does not necessarily include testing of all parameters.
NOTICE
Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this
document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised
to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems.
TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product
design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that
the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular
purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any
and all liability, including without limitation consequential or incidental damages.
TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR
USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY
RESUL T I N PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY
UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK.
LUMENOLOGY is a registered trademark, and TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are trademarks of
Texas Advanced Optoelectronic Solutions Incorporated.
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1280 × 1 LINEAR SENSOR ARRAY WITH HOLD
TAOS043 – AUGUST 2002
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