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TSH150
WIDE BANDWIDTHAND BIPOLAR INPUTS
SINGLE OPERATIONAL AMPLIFIER
June 1998
ORDERCODES
Part
Number
Temperature
Range
Package
ND
TSH150C 0
o
C, 70oC ••
TSH150I -40
o
C, 125oC ••
150-01.TBL
1
2
3
4
8
6
5
7
Inverting Input
Non-inverting Input
Output
Offset Null 2Offset Null1
N.C.
V
CC
V
CC
+
150-01.EPS
PINCONNECTIONS (topview)
.LOW DISTORTION
.GAIN BANDWIDTH PRODUCT : 150MHz
.UNITY GAINSTABLE
.SLEWRATE : 190V/µs
.VERY FAST SETTLING TIME: 20ns(0.1%)
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
DESCRIPTION:
The TSH150is a wideband monolithic operational
amplifier, internally compensated for unity-gain
stability.
Low noiseand low distortion, widebandwidthand
high linearitymakethisamplifiersuitablefor RFand
video applications. Short circuit protection is provided by an internalcurrent-limitingcircuit.
The TSH150 has internal electrostatic discharge
(ESD)protection circuits andfulfillsMILSTD883CClass2.
1/7
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3
non inverting
input
2
inverting
input
1
8
Offset N1
Offset N2
7V
CC
+
C
c
6
output
V
CC
-
4
V
Internal
ref
150-02.EPS
SCHEMATICDIAGRAM
ABSOLUTEMAXIMUMRATINGS
Symbol Parameter Value Unit
V
CC
Supply Voltage ±7V
V
id
Differential Input Voltage ±5V
V
i
Input Voltage Range ±5V
I
in
Current On Inputs
Current On Offset Null Pins
±50
±20
mA
T
oper
Operating Free-AirTemperature Range TSH150C
TSH150I
0 to +70
-40 to +125
o
C
T
stg
Storage Temperature Range -65to 150
o
C
150-02.TBL
N1
N2
TSH150
100kΩ
V
CC
150-03.EPS
INPUT OFFSET VOLTAGE NULL CIRCUIT
OPERATINGCONDITIONS
Symbol Parameter Value Unit
V
CC
Supply Voltage ±3to±6V
V
ic
Common Mode Input VoltageRange V
CC
-
+2 to V
CC
+
-1 V
150-03.TBL
TSH150
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Page 3
ELECTRICALCHARACTERISTICS
V
CC
= ± 5V, T
amb
=25oC (unlessotherwisespecified)
Symbol Parameter
TSH150C, I
Unit
Min. Typ. Max.
V
io
Input Offset Voltage
T
min
≤ T
amb
≤ T
max.
0.3 5
7
mV
DV
io
Input Offset Voltage Drift
T
min
≤ T
amb
≤ T
max.
10
µV/
o
C
I
ib
Input Bias Current 5 30 µA
I
io
Input Offset Current 0.1 2 µA
I
CC
Supply Current, no load
V
CC
= ± 5V
V
CC
= ± 3V
V
CC
= ±6V
T
min
≤ T
amb
≤ T
max.
VCC= ± 5V
23
21
25
30
28
40
32
mA
A
vd
Large Signal Voltage Gain
V
o
= ±2.5V
R
L
= ∞
R
L
= 100Ω
R
L
=50Ω
800
300
200
1300
850
650
V/V
V
icm
Input Common Mode VoltageRange -3 to +4 -3.5 to +4.5 V
CMR Common Mode Rejection Ratio V
ic=Vicm min.
60 100 dB
SVR Supply Voltage Rejection Ratio
V
CC
= ± 5V to ± 3V 50 70
dB
V
o
Output Voltage RL= 100Ω
R
L
=50Ω
T
min
≤ T
amb
≤ T
max.
RL= 100Ω
R
L
=50Ω
±3
±2.8
± 2.9
± 2.7
+3.5
-3.7
+3.3
-3.5
V
I
o
Output Short Circuit Current
V
id
= ±1V, Vo=0V ±50 ±100
mA
GBP Gain Bandwidth Product
A
VCL
= 100, RL= 100Ω,CL= 15pF,f = 7.5MHz 150
MHz
SR Slew Rate
V
in
= ± 2V,A
VCL
=1,RL= 100Ω,CL= 15pF 100 190
V/µs
e
n
Equivalent Input Voltage Noise
R
S
=50Ω
fo = 1kHz
fo = 10kHz
fo = 100kHz
fo = 1MHz
7
6.5
6.2
5.5
nV
√Hz
K
ov
Overshoot
V
in
= ± 2V,A
VCL
=1,RL= 100Ω,CL= 15pF 5
%
t
s
Settling Time 0.1% - (note1)
V
in
= ± 1V,A
VCL
=-1 20
ns
t
r,tf
Rise and FallTime - (note1)
V
in
= ±100mV, A
VCL
= 2 3.5
ns
t
d
Delay Time - (note 1)
V
in
= ±100mV, A
VCL
= 2 2.5
ns
∅m Phase Margin
A
VM
=1,RL= 100Ω,CL= 15pF 50
Degrees
THD TotalHarmonic Distortion
A
VCL
= 10, f = 1KHz, Vo= ± 2.5V,no load 0.02
%
FPB Full Power Bandwidth - (note 2)
V
o
= 5Vpp, RL= 100Ω
V
o
= 2Vpp, RL= 100Ω
12
30
MHz
Note 1 : See test waveform figure
Note 2 : Full power bandwidth =
SR
Π V
opp
150-04.TBL
TSH150
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Page 4
V
in
50%
t
d
t
r
90%
t
s
0.1% of edge a mplitude
10%
150-04.EPS
TEST WAVEFORM
Input
50
Ω
1k
Ω
10nF
10µF
C
F
-5V
+5V
10nF
Output
50
Ω
10µF
1k
Ω
150-05.EPS
EVALUATION CIRCUIT
As for any high frequency device, a fewrules must
be observedwhendesigningthe PCBto get the best
performancesfrom this high speedop amp.
From the most to the least important points :
• Each power supply lead has to be bypassed
to ground witha 10nF ceramic capacitor very
close to the deviceand a 10µF tantalum ca-
pacitor.
• Toprovidelowinductanceand low resistance
common return, use a ground plane or common point return for power and signal.
• All leads must be wide and as short as possible especially for op amp inputs. This is in
order to decrease parasitic capacitance and
inductance.
• Use small resistor values to decrease time
constantwithparasiticcapacitance.Beaware
on TSH150 device of the I
io
error and input
noise currentswithhighfeedbackresistorvalues.
• Choose componentsizesassmall aspossible
(SMD).
• On output, decrease capacitor load so as to
avoid circuit stability being degraded which
may cause oscillation. You can also add a
serial resistor in order to minimise its influence.
• One can add in parallelwithfeedbackresistor
a few pF ceramic capacitor C
F
adjusted to
optimizethe settling time.
PRINTEDCIRCUIT LAYOUT
TSH150
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Page 5
.LOW DISTORTION
.GAIN BANDWIDTH PRODUCT : 150MHz
.UNITY GAIN STABLE
.SLEWRATE : 190V/µs
.VERY FAST SETTLING TIME : 20ns (0.1%)
MACROMODEL
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVEPOWER SUPPLY
* 5 NEGATIVEPOWER SUPPLY
.SUBCKT TSH150 1 3 2 4 5 (analog)
**********************************************************
.MODEL MDTH D IS=1E-8 KF=1.568191E-15 CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 1.040000E+02
RIN 15 16 1.040000E+02
RIS 11 15 3.264539E+02
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC -9.162265E-05
VOFN 13 14 DC 0
IPOL 13 5 1.000000E-03
CPS 11 15 5.757255E-12
DINN 17 13 MDTH 400E-12
VIN 17 5 1.5000000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 0.500000E+00
FCP 4 5 VOFP 2.200000E+01
FCN 5 4 VOFN 2.200000E+01
FIBP 2 5 VOFP 1.000000E-02
FIBN 5 1 VOFN 1.000000E-02
* AMPLIFYING STAGE
FIP 5 19 VOFP 4.370000E+02
FIN 5 19 VOFN 4.370000E+02
RG1 19 5 1.124121E+03
RG2 19 4 1.124121E+03
CC 19 29 2.000000E-09
HZTP 30 29 VOFP 5.574976E+01
HZTN 5 30 VOFN 5.574976E+01
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 5.000000E+02
VIPM 28 4 5.000000E+01
HONM 21 27 VOUT 5.000000E+02
VINM 5 27 5.000000E+01
EOUT 26 23 19 5 1
VOUT 23 5 0
ROUT 26 3 2.180423E+01
COUT 3 5 1.000000E-12
DOP 19 25 MDTH 400E-12
VOP 4 25 1.511965E+00
DON 24 19 MDTH 400E-12
VON 24 5 1.511965E+00
.ENDS
Applies to : TSH150C,I
ELECTRICAL CHARACTERISTICS
V
CC
=±5V, T
amb
=25oC (unlessotherwise specified)
Symbol Conditions Value Unit
V
io
0mV
A
vd
RL= 100Ω 1 V/mV
I
CC
No load 21 mA
V
icm
-3.5 to 4.5 V
V
OH
RL= 100Ω +3.6 V
V
OL
RL= 100Ω -3.6 V
I
sink
VO= 0V 108 mA
I
source
VO= 0V 108 mA
GBP R
L
= 100
Ω,
CL= 15pF 147 MHz
SR R
L
= 100
Ω,
CL= 15pF 180 V/µs
∅mR
L
= 100
Ω,
CL= 15pF 42 Degrees
t
s
AV= -1 at 0.1% 22.6 ns
TSH150
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Page 6
PM-DIP8.EPS
PACKAGEMECHANICAL DATA
8 PINS- PLASTICDIP
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 3.32 0.131
a1 0.51 0.020
B 1.15 1.65 0.045 0.065
b 0.356 0.55 0.014 0.022
b1 0.204 0.304 0.008 0.012
D 10.92 0.430
E 7.95 9.75 0.313 0.384
e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300
F 6.6 0260
i 5.08 0.200
L 3.18 3.81 0.125 0.150
Z 1.52 0.060
DIP8.TBL
TSH150
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PM-SO8.EPS
PACKAGEMECHANICAL DATA
8 PINS- PLASTICMICROPACKAGE(SO)
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.026 0.033
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.020
c1 45
o
(typ.)
D 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.150 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024
S8
o
(max.)
SO8.TBL
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied.STMicroelectronics productsarenot authorizedfor useas critical componentsinlife support devicesor systems
without express written approval of STMicroelectronics.
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1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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ORDERCODE :
TSH150
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