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TSFF5200
Vishay Telefunken
High Speed IR Emitting Diode in ø5 mm (T–1¾)
Package
Description
TSFF5200 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded in a clear, untinted plastic package.
The new technology combines the high speed of DH–
GaAlAs with the efficiency of standard GaAlAs and the
low forward voltage of the standard GaAs technology .
Features
D
High modulation bandwidth (35 MHz)
D
Extra high radiant power and radiant intensity
D
Low forward voltage
D
Suitable for high pulse current operation
D
Standard T–1¾ (ø 5 mm) package
D
Angle of half intensity ϕ = ± 10
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 870 nm
°
94 8390
Applications
IInfrared video data transmission between Camcorder and TV set.
Free air data transmission systems with high modulation frequencies or
high data transmission rate requirements.
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature t x 5sec, 2 mm from case T
Thermal Resistance Junction/Ambient R
R
F
FM
FSM
V
amb
stg
sd
thJA
5 V
100 mA
300 mA
1 A
250 mW
j
100
–25...+85
–25...+85
260
300 K/W
°
C
°
C
°
C
°
C
Document Number 81060
Rev. 2, 29-Jun-99
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TSFF5200
g
y
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 1 A, tp = 100 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I
IF = 1 A, tp = 100 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of
f
e
IF = 100 mA TK
F
F
VF
R
j
e
e
f
e
80 160 mW/sr
800 1600 mW/sr
f
e
Angle of Half Intensity ϕ ±10 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
Fall Time IF = 100 mA t
Cut–Off Frequency IDC = 70 mA, IAC = 30 mA pp f
l
Dl
p
l
p
r
f
c
1.45 1.6 V
2.5 3.0 V
–2.4 mV/K
10
m
160 pF
40 mW
–0.5 %/K
870 nm
40 nm
0.2 nm/K
10 ns
10 ns
35 MHz
A
Typical Characteristics (T
250
200
150
R
thJA
100
V
50
P – Power Dissipation ( mW )
0
020406080
T
16111
Figure 1. Power Dissipation vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
= 25_C unless otherwise specified)
amb
100
250
200
150
100
R
F
I – Forward Current ( mA )
50
0
020406080
T
16112
Figure 2. Forward Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
thJA
100
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TSFF5200
Vishay Telefunken
1000
tp/T=0.01
T
amb < 50
°
0.02
0.05
0.1
F
I – Forward Current ( A )
0.2
0.5
100
0.01 0.10 1.00 10.00 100.00
tp – Pulse Duration ( ms )16031
Figure 3. Pulse Forward Current vs. Pulse Duration
1000.0
100.0
10.0
1000.0
100.0
10.0
1.0
e
I – Radiant Intensity ( mW/sr )
0.1
1 10 100 1000
16032
IF – Forward Current ( mA )
Figure 6. Radiant Intensity vs. Forward Current
1000.0
100.0
10.0
1.0
F
I – Forward Current ( mA )
0.1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VF – Forward Voltage ( V )16030
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
IF = 10 mA
1.0
0.9
Frel
0.8
V – Relative Forward Voltage
0.7
020406080
T
94 7990 e
– Ambient Temperature ( °C )
amb
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
100
– Radiant Power ( mW )
1.0
e
F
0.1
1 10 100 1000
16033 I
– Forward Current ( mA )
F
Figure 7. Radiant Power vs. Forward Current
1.4
1.3
IF = 20 mA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Frel
V – Relative Forward Voltage
0.5
0.4
0 102030405060708090100
T
– Ambient Temperature ( °C )16034
amb
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
Document Number 81060
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TSFF5200
Vishay Telefunken
1.25
1.0
0.75
0.5
– Radiant Power ( mW )
e
F
0.25
0
780 880
95 9886
l
– Wavelength ( nm )
980
Figure 9. Relative Radiant Power vs. Wavelength
0°
10°20
°
1.0
0.9
30°
40°
50°
1
0
–1
–2
–3
Attenuation ( dB )
I
=70mA
FDC
–4
I
=30mA pp
FAC
–5
10 100 1000 10000 100000
f – Frequency ( kHz )14256
Figure 11. Attenuation vs. Frequency
0.8
e rel
I – Relative Radiant Intensity
0.7
0.4 0.2 0 0.2 0.4
0.6
15989
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
60°
70°
80°
0.6
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Document Number 81060
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Dimensions in mm
TSFF5200
Vishay Telefunken
15909
Document Number 81060
Rev. 2, 29-Jun-99
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TSFF5200
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 81060
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