Page 1
TSDF52424
Vishay Telefunken
Dual - MOSMIC– two AGC Amplifiers for TV–Tuner
Prestage with 5 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
Typical Application
Amplifier 1
AGC
RF in
C block
C block
G2
G1
RFC
D
S
C block
V
DD
RF out
94 9296
Amplifier 2
AGC
RF in
C block
C block
G2
G1
RFC
D
S
C block
V
DD
RF out
94 9296
Features
D
D
Two AGC amplifiers in a single package
D
Integrated gate protection diodes
D
Low noise figure
D
High gain, high forward transadmittance
(24 mS typ.)
645
TY
WD2
CW
132
16020
TSDF52424 Marking: WD2
Plastic case (SOT 363)
1 = Gate 1 (amplifier 1), 2 = Gate 2, 3 = Drain (amplifier 1),
4 = Drain (amplifier 2), 5 = Source, 6 = Gate1 (amplifier 2)
T = Telefunken
Y = Year, is variable for digit from 0 to 9 (e.g. 9 = 1999, 0 = 2000)
CW = Calendar Week, is variable for number from 01 to 52
Number of Calendar Week is always indicating place of pin 1
Biasing network on chip
D
Improved cross modulation at gain reduction
D
High AGC-range
D
SMD package
16 015–2
Document Number 85069
Rev. 3, 05-Mar-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
Page 2
TSDF52424
Vishay Telefunken
All of following data and characteristics are valid for operating either
amplifier 1 (pin 1, 3, 2, 5) or amplifier 2 (pin 6, 4, 2, 5)
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Drain - source voltage V
Drain current I
Gate 1/Gate 2 - source peak current ±I
Gate 1/Gate 2 - source voltage ±V
Total power dissipation T
≤ 78 °C P
amb
Channel temperature T
Storage temperature range T
DS
D
G1/G2SM
G1/G2SM
tot
Ch
stg
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
3
R
thChA
8 V
20 mA
10 mA
6 V
160 mW
150
–55 to +150
450 K/W
°
C
°
C
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source +V
leakage current
Gate 2 - source
leakage current
Drain current VDS = 5 V, V
Self-biased
operating current
Gate 2 - source
cut-off voltage
±I
= 10 mA, V
G1S
±I
= 10 mA, V
G2S
= 5 V, V
G1S
–V
= 5 V, V
G1S
±V
= 5 V, V
G2S
VDS = 5 V, V
VDS = 5 V, V
= VDS = 0 ±V
G2S
= VDS = 0 ±V
G1S
= VDS = 0 +I
G2S
= VDS = 0 –I
G2S
= VDS = 0 ±I
G1S
= 0, V
G1S
= nc, V
G1S
= nc, ID = 20 mA V
G1S
= 4 V I
G2S
= 4 V I
G2S
(BR)G1SS
(BR)G2SS
G1SS
G1SS
G2SS
DSS
DSP
G2S(OFF)
7 10 V
7 10 V
50 500mA
7 10 14 mA
1.0 V
50
m
100mA
20 nA
A
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Document Number 85069
Rev. 3, 05-Mar-99
Page 3
Electrical AC Characteristics
g
g
TSDF52424
Vishay Telefunken
VDS = 5 V, V
= 4 V, f = 1 MHz , T
G2S
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward transadmittance y
Gate 1 input capacitance C
Feedback capacitance C
Output capacitance C
Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz G
GS = 3,3 mS, GL = 1 mS, f = 800 MHz G
AGC range VDS = 5 V, V
= 1 to 4 V, f = 800 MHz
G2S
20 24 28 mS
21s
2.1 2.5 pF
20 fF
0.9 pF
26 dB
45 dB
D
issg1
rss
oss
ps
ps
G
ps
16.5 20 dB
Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F 1 dB
GS = 3,3 mS, GL = 1 mS, f = 800 MHz F 1.3 dB
Cross modulation Input level for k = 1 % @ 0 dB AGC
fw = 50 MHz, f
= 60 MHz
unw
Input level for k = 1 % @ 40 dB AGC
fw = 50 MHz, f
= 60 MHz
unw
X
X
mod
mod
85 dBmV
100 dBmV
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with V
Using open collector switching transistor (inside of PLL), insert 10 kW collector resistor.
< 0.7 V is feasible.
G1S
Document Number 85069
Rev. 3, 05-Mar-99
www.vishay.de • FaxBack +1-408-970-5600
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Page 4
TSDF52424
Vishay Telefunken
Dimensions of TSDF52424 in mm
14280
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Document Number 85069
Rev. 3, 05-Mar-99
Page 5
TSDF52424
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 85069
Rev. 3, 05-Mar-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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