Page 1
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and small signal low power amplifiers.
This transistor has superior noise figure and
associated gain performance at UHF, VHF and microwave frequencies.
Features
D
Low power applications
D
Very low noise figure
D
High transition frequency fT = 12 GHz
Vishay Telefunken
21
94 9279
13 579
43
TSDF1205 Marking: F05
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
1
2
13 653
4
3
TSDF1205W Marking: WF0
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
13 566
43
TSDF1205R Marking: 05F
Plastic case (SOT 143R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
1
TSDF1205RW Marking: W0F
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
21
94 9278
2
34
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 132 °C P
amb
CBO
CEO
EBO
C
tot
j
stg
95 10831
13 56613 654
9 V
4 V
2 V
12 mA
40 mW
150
–65 to +150
°
C
°
C
Document Number 85065
Rev. 5, 30-Jun-00
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Page 2
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 12 V, VBE = 0 I
Collector-base cut-off current VCB = 10 V, IE = 0 I
Emitter-base cut-off current VEB = 1 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 5 mA, IB = 0.5 mA V
DC forward current transfer ratio VCE = 2 V, IC = 2 mA h
Electrical AC Characteristics
3
R
thJA
CES
CBO
EBO
(BR)CEO
CEsat
FE
450 K/W
4 V
0.1 0.5 V
50 120 250
100mA
100 nA
2
m
A
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 2 V, IC = 5 mA, f = 1 GHz f
Collector-base capacitance VCB = 1 V, f = 1 MHz C
Collector-emitter capacitance VCE = 1 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 2 V, IC = 2 mA, ZS = Z
Sopt
,
ZL = 50 W, f = 2 GHz
Power gain VCE = 2 V, IC = 2 mA,
f = 2 GHz (@F
VCE = 2 V, IC = 5 mA, ZS = Z
Z
= 50 W f = 2 GHz
L
Transducer gain VCE = 2 V, IC = 5 mA, Z0 = 50 W,
opt
)
,
Sopt
S
f = 2 GHz
T
cb
ce
eb
12 GHz
0.2 pF
0.35 pF
0.15 pF
F 1.3 dB
G
G
pe
pe
21e
2
13 dB
11.5 dB
12.5 dB
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Document Number 85065
Rev. 5, 30-Jun-00
Page 3
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Typical Characteristics (T
100
80
60
40
20
tot
P – Total Power Dissipation ( mW )
0
0 20 40 60 80 100 120 140 160
T
– Ambient Temperature ( °C )14284
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
16
f=1GHz
14
12
10
VCE=3V
= 25_C unless otherwise specified)
amb
0.5
0.4
0.3
0.2
0.1
cb
C – Collector Base Capacitance ( pF )
0
012345
VCB – Collector Base Voltage ( V )14286
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
3.0
VCE=2V
f=2GHz
2.5
Z
=50
W
S
2.0
f=1MHz
8
6
4
2
T
f – Transition Frequency ( GHz )
0
02468101214
IC – Collector Current ( mA )14285
VCE=2V
Figure 2. Transition Frequency vs. Collector Current
1.5
1.0
F – Noise Figure ( dB )
0.5
0
0123456
IC – Collector Current ( mA )14287
Figure 4. Noise Figure vs. Collector Current
Document Number 85065
Rev. 5, 30-Jun-00
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Page 4
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Dimensions of TSDF1205 in mm
Dimensions of TSDF1205R in mm
96 12240
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4 (6)
96 12239
Document Number 85065
Rev. 5, 30-Jun-00
Page 5
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Dimensions of TSDF1205W in mm
Vishay Telefunken
Dimensions of TSDF1205RW in mm
96 12237
Document Number 85065
Rev. 5, 30-Jun-00
96 12238
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Page 6
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 85065
Rev. 5, 30-Jun-00
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