80C186EB/80C188EB, 80L186EB/80L188EB
ICCVERSUS FREQUENCY AND VOLTAGE
The current (ICC) consumption of the processor is
essentially composed of two components; I
PD
and
I
CCS
.
I
PD
is the quiescent current that represents internal
device leakage, and is measured with all inputs or
floating outputs at GND or V
CC
(no clock applied to
the device). I
PD
is equal to the Powerdown current
and is typically less than 50 mA.
I
CCS
is the switching current used to charge and
discharge parasitic device capacitance when changing logic levels. Since I
CCS
is typically much greater
than I
PD,IPD
can often be ignored when calculating
I
CC
.
I
CCS
is related to the voltage and frequency at which
the device is operating. It is given by the formula:
PowereVcIeV
2
c
C
DEV
c
f
... I
e
I
CC
e
I
CCS
e
VcC
DEV
c
f
Where: VeDevice operating voltage (VCC)
C
DEV
e
Device capacitance
f
e
Device operating frequency
I
CCS
e
I
CC
e
Device current
Measuring C
DEV
on a device like the 80C186EB
would be difficult. Instead, C
DEV
is calculated using
the above formula by measuring I
CC
at a known V
CC
and frequency (see Table 11). Using this C
DEV
val-
ue, I
CC
can be calculated at any voltage and fre-
quency within the specified operating range.
EXAMPLE: Calculate the typical I
CC
when operating
at 10 MHz, 4.8V.
I
CC
e
I
CCS
e
4.8c0.583c10&28 mA
PDTMR PIN DELAY CALCULATION
The PDTMR pin provides a delay between the assertion of NMI and the enabling of the internal
clocks when exiting Powerdown. A delay is required
only when using the on-chip oscillator to allow the
crystal or resonator circuit time to stabilize.
NOTE:
The PDTMR pin function does not apply when
RESIN
is asserted (i.e., a device reset during Pow-
erdown is similar to a cold reset and RESIN
must
remain active until after the oscillator has stabilized).
To calculate the value of capacitor required to provide a desired delay, use the equation:
440cteCPD(5V, 25§C)
Where: tedesired delay in seconds
C
PD
e
capacitive load on PDTMR in microfarads
EXAMPLE: To get a delay of 300 ms, a capacitor
value of C
PD
e
440c(300c10
b
6
)e0.132 mFis
required. Round up to standard (available) capacitive values.
NOTE:
The above equation applies to delay times greater
than 10 ms and will compute the TYPICAL capacitance needed to achieve the desired delay. A delay
variance of
a
50% orb25% can occur due to
temperature, voltage, and device process extremes. In general, higher V
CC
and/or lower tem-
perature will decrease delay time, while lower V
CC
and/or higher temperature will increase delay time.
Table 11. Device Capacitance (C
DEV
) Values
Parameter Typ Max Units Notes
C
DEV
(Device in Reset) 0.583 1.02 mA/V*MHz 1, 2
C
DEV
(Device in Idle) 0.408 0.682 mA/V*MHz 1, 2
1. Max C
DEV
is calculated atb40§C, all floating outputs driven to VCCor GND, and all
outputs loaded to 50 pF (including CLKOUT and OSCOUT).
2. Typical C
DEV
is calculated at 25§C with all outputs loaded to 50 pF except CLKOUT and
OSCOUT, which are not loaded.
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