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TS914AIN

Datasheet TS914IN, TS914ID, TS914BID, TS914AIN, TS914AID Datasheet (SGS Thomson Microelectronics)

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Page 1
TS914
RAIL TO RAIL
CMOS QUAD OPERATIONALAMPLIFIER
April 1999
.
RAIL TORAIL INPUT AND OUTPUT VOLTAGERANGES
.
.
EXTREMELYLOW INPUTBIAS CURRENT : 1pA TYP
.
LOW INPUT OFFSETVOLTAGE: 5mVmax.
.
SPECIFIEDFOR 600Ω AND 100Ω LOADS
.
LOW SUPPLYCURRENT: 200µA/Ampli
.
SPICEMACROMODEL INCLUDEDIN THIS SPECIFICATION
Invert ing Input 2
Non-inve rting Input 2
Non-inve rting Input 1
CCV
-
CC
V
1
2
3
4
8
5
6
7
9
10
11
12
13
14
+
Output 3
Output 4
Non-inve rting Input 4
Invertin g Input 4
Non-inve rting Input 3
Invertin g Input 3
-
+
-
+
-
+
-
+
Output 1
Inverting Input 1
Output 2
PIN CONNECTIONS (top view)
DESCRIPTION
The TS914 isa RAILTO RAIL quad CMOSopera­tional amplifier designedtooperatewith a singleor dual supply voltage. The input voltage range V
icm
includes the two
supplyrails V
CC
+
and V
CC
-
.
The outputreaches :
•
V
CC
-
+50mV V
CC
+
-50mV with RL= 10kΩ
•
V
CC
-
+350mV V
CC
+
-350mV with RL= 600Ω This product offers a broad supply voltageoperat­ing range from 2.7V to 16V anda supplycurrent of only 200µA/amp.(V
CC
= 3V). Source and sink output current capability is typi­cally 40mA (at V
CC
= 3V), fixed by an internal limitationcircuit. STMicroelectronics is offering a dual op-amp with the same features: TS912.
ORDER CODES
Part Number Temperature Range
Package ND
TS914I/AI -40, +125
o
C ••
N
DIP14
(Plastic Package)
D
SO14
(Plastic Micropackage)
1/13
Page 2
ABSOLUTEMAXIMUMRATINGS
Symbol Parameter Value Unit
V
CC
Supply Voltage - (note 1) 18 V
V
id
Differential Input Voltage - (note 2) ±18 V
V
i
Input Voltage - (note 3) -0.3 to 18 V
I
in
Current on Inputs ±50 mA
I
o
Current on Outputs ±130 mA
T
oper
Operating Free Air Temperature RangeI -40 to +125
o
C
T
stg
Storage Temperature -65 to +150
o
C
Notes : 1. All voltage values, exceptdifferential voltage are with respect to network ground terminal.
2. Differentialvoltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of input and output voltages must never exceed V
CC
+
+0.3V.
OPERATING CONDITIONS
Symbol Parameter Value Unit
V
CC
Supply Voltage 2.7to 16 V
V
icm
Common Mode Input Voltage Range V
CC
-
-0.2 to V
CC
+
+0.2 V
Non-inverting
Input
Inverting
Input
Internal
Vref
Output
V
CC
V
CC
SCHEMATIC DIAGRAM (1/4 TS914)
TS914
2/13
Page 3
ELECTRICAL CHARACTERISTICS
V
CC
+
=3V,V
CC
-
=0V,RL,CLconnectedto VCC/2, T
amb
=25oC (unlessotherwisespecified)
Symbol Parameter
TS914I/AI
Unit
Min. Typ. Max.
V
io
Input Offset Voltage (Vic=Vo=VCC/2) TS914
TS914A
T
min.
≤ T
amb
≤ T
max.
TS914 TS914A
10
5
12
7
mV
DV
io
Input Offset Voltage Drift 5 µV/oC
I
io
Input Offset Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 100
200
pA
I
ib
Input Bias Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 150
300
pA
I
CC
Supply Current (per amplifier, A
VCL
= 1, no load)
T
min.
≤ T
amb
≤ T
max.
200 300
400
µA
CMR Common Mode Rejection Ratio
V
ic
= 0 to 3V, Vo= 1.5V 70
dB
SVR Supply Voltage Rejection Ratio (V
CC
+
= 2.7 to 3.3V, VO=VCC/2) 40 70 dB
A
vd
Large Signal Voltage Gain (RL= 10kΩ,VO= 1.2V to 1.8V)
T
min.
≤ T
amb
≤ T
max.
3 2
10 V/mV
V
OH
High Level Output Voltage (Vid= 1V)
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ R
L
= 600Ω
2.9
2.3
2.8
2.1
2.96
2.6 2
V
V
OL
Low Level Output Voltage (Vid= -1V)
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ R
L
= 600Ω
50 300 900
100 400
150 600
mV
I
o
Output Short Circuit Current (Vid= ±1V) Source (Vo=V
CC
−
)
Sink (V
o=VCC
+
)
40
40
mA
GBP Gain Bandwidth Product
(A
VCL
= 100, RL= 10kΩ,CL= 100pF, f = 100kHz) 0.8
MHz
SR
+
Positive Slew Rate
A
VCL
=1,RL= 10kΩ,Vi=1.3V to 1.7V, CL= 100pF 0.5
V/µs
SR
-
Negative Slew Rate 0.4 V/µs
∅m PhaseMargin 30 Degrees
e
n
Equivalent Input Noise Voltage (Rs= 100Ω, f = 1kHz) 30
nV
√Hz
V
O1/VO2
Channel Separation (f = 1kHz) 120 dB
Note 1 : Maximum values including unavoidable inaccuracies of the industrial test.
TS914
3/13
Page 4
ELECTRICAL CHARACTERISTICS
V
CC
+
=5V,V
CC
-
=0V,RL,CLconnectedto VCC/2, T
amb
=25oC (unlessotherwisespecified)
Symbol Parameter
TS914I/AI
Unit
Min. Typ. Max.
V
io
Input Offset Voltage (Vic=Vo=VCC/2) TS914
TS914A
T
min.
≤ T
amb
≤ T
max.
TS914 TS914A
10
5
12
7
mV
DV
io
Input Offset Voltage Drift 5 µV/oC
I
io
Input Offset Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 100
200
pA
I
ib
Input Bias Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 150
300
pA
I
CC
Supply Current (per amplifier, A
VCL
= 1, no load)
T
min.
≤ T
amb
≤ T
max.
230 350
450
µA
CMR Common Mode Rejection Ratio
V
ic
= 1.5 to 3.5V, Vo= 2.5V 50 75
dB
SVR Supply Voltage Rejection Ratio (V
CC
+
= 3 to 5V, VO=VCC/2) 50 80 dB
A
vd
Large Signal Voltage Gain (RL= 10kΩ,VO= 1.5V to 3.5V)
T
min.
≤ T
amb
≤ T
max.
10
7
30 V/mV
V
OH
High Level Output Voltage (Vid= 1V)
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ R
L
= 600Ω
4.90
4.25
4.8
4.1
4.95
4.65
3.7
V
V
OL
Low Level Output Voltage (Vid= -1V)
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ R
L
= 600Ω
50 350
1400
100 500
150 750
mV
I
o
Output Short Circuit Current (Vid= ±1V) Source (Vo=V
CC
−
)
Sink (V
o=VCC
+
)
45 45
60
60
mA
GBP Gain Bandwidth Product
(A
VCL
= 100, RL= 10kΩ,CL= 100pF, f = 100kHz) 0.9
MHz
SR
+
Positive Slew Rate
A
VCL
=1,RL= 10kΩ,Vi=1V to 4V, CL= 100pF 0.8
V/µs
SR
-
Negative Slew Rate 0.5 V/µs
∅m PhaseMargin 30 Degrees
Note 1 : Maximum values including unavoidable inaccuracies of the industrial test.
TS914
4/13
Page 5
ELECTRICALCHARACTERISTICS
V
CC
+
=10V,V
CC
-
=0V,RL,CLconnectedto VCC/2, T
amb
=25oC (unless otherwise specified)
Symbol Parameter
TS914I/AI
Unit
Min. Typ. Max.
V
io
InputOffset Voltage (Vic=Vo=VCC/2) TS914
TS914A
T
min.
≤ T
amb
≤ T
max.
TS914 TS914A
10
5
12
7
mV
DV
io
InputOffset Voltage Drift 5 µV/oC
I
io
InputOffset Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 100
200
pA
I
ib
InputBias Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 150
300
pA
I
CC
SupplyCurrent (per amplifier, A
VCL
= 1, no load)
T
min.
≤ T
amb
≤ T
max.
400 600
700
µA
CMR Common Mode Rejection Ratio V
ic
= 3 to 7V, Vo=5V
V
ic
= 0 to 10V, Vo=5V
50 75
70
dB
SVR SupplyVoltage Rejection Ratio (V
CC
+
= 5 to 10V, VO=VCC/2) 50 80 dB
A
vd
LargeSignal Voltage Gain (RL= 10kΩ,VO= 2.5V to 7.5V)
T
min.
≤ T
amb
≤ T
max.
20 15
60 V/mV
V
OH
High Level Output Voltage (Vid= 1V)
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ R
L
= 600Ω
9.85
9.2
9.8 9
9.95
9.35
7.8
V
V
OL
Low Level Output Voltage (Vid= -1V)
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ R
L
= 600Ω
50
650
2300
150 800
150 900
mV
I
o
Output Short Circuit Current (Vid= ±1V) Source (Vo=V
CC
−
)
Sink (V
o=VCC
+
)
45 45
60 60
mA
GBP GainBandwidth Product
(A
VCL
= 100, RL= 10kΩ,CL= 100pF, f = 100kHz) 1.3
MHz
SR
+
Positive Slew Rate
A
VCL
=1,RL= 10kΩ,Vi= 2.5V to 7.5V, CL= 100pF 1.3
V/µs
SR
-
NegativeSlew Rate 0.8 V/µs
∅m Phase Margin 40 Degrees
e
n
Equivalent Input Noise Voltage (Rs= 100Ω, f = 1kHz) 30
nV
√Hz
THD TotalHarmonic Distortion
(A
VCL
=1,RL= 10kΩ,CL= 100pF, VO= 4.75V to 5.25V, f = 1kHz) 0.024
%
C
in
InputCapacitance 1.5 pF
V
O1/VO2
ChannelSeparation (f = 1kHz) 120 dB
Note 1 : Maximum values including unavoidable inaccuracies of the industrial test.
TS914
5/13
Page 6
TYPICALCHARACTERISTICS
CC
SUPP LY VOLTAGE, V (V)
0481216
T=25 C A=1 V=V /2
amb
VCL
OCC
CC
µ
SUPPLY CURRENT, I (
A)
600
500
400
300
200
100
Figure 1 : SupplyCurrent (each amplifier)
vs Supply Voltage
25 50 75 100 125
INPUT BIAS CURRENT, I (pA)
ib
V = 10V V=5V No load
CC
i
100
10
1
amb
TEMPERATURE, T ( C)
Figure2 : Input Bias Current vs Temperature
1
OUTPUT VOLTAGE, V (V)
OL
amb
id
T=25C V = -100mV
V = +5V
CC
V = +3V
CC
030507090
OL
OUTPUT CURRENT, I (mA)
2
3
4
5
Figure 4a : Low Level OutputVoltage vs Low
Level Output Current
2
OUTPUT VOLTAGE, V (V)
OL
amb id
T=25C V = -100mV
0
V = 10V
CC
V = 16V
CC
OL
OUTPUT CURRENT, I (mA)
4
6
8
10
30 50 70 90
Figure4b : Low Level Output Voltage vs Low
Level Output Current
5
-70 -40 -20 0
OUTPUT VOLTAGE, V (V)
OH
amb id
T=25C V = 100mV
V = +5V
CC
V=+3V
CC
4
3
2
1
0
OH
OUTPUT CURRENT, I (mA)
Figure 3a : High Level Output Voltage vs High
Level Output Current
4
0
OUTPUT VOLTAGE, V (V)
OH
V =+16V
CC
V = +10V
CC
OH
OUTPUT CURRENT, I (mA)
12
8
20
16
-70 -40 -20 0
amb id
T=25C V = 100mV
Figure3b : High Level Output Voltage vs High
Level Output Current
TS914
6/13
Page 7
50 40 30 20
10
0
-10
GAIN (dB)
PHASE (Degrees)
0 45 90 135 180
FREQUENCY, f (Hz)
PHASE
GAIN
Phase Margin
Gain Bandwidth Product
6
10
10
23
10
4
10510
7
10
T=25 C V = 10V R = 10k
Ω
C = 100pF A = 100
amb
CC
L L
VCL
Figure 5a : Gain and Phase vs Frequecy
50 40 30
20 10
0
-
10
GAIN (dB)
PHASE (Degrees)
0 45 90 135 180
FREQUENCY, f (Hz)
PHASE
GAIN
Phase Margin
Gain Bandwidth Product
6
10
10
23
10
4
10
5
10
7
10
T=25 C V=10V R = 600
Ω
C = 100pF A = 100
amb
CC
L L
VCL
Figure5b : Gain and Phase vs Frequecy
SUPPLY VOLTAGE, V (V)
CC
0481216
1800
GAINBANDW. PROD., GBP (kHz)
T=25 C R = 10k
Ω
C = 100pF
amb
L L
1400
1000
600
200
Figure 6a : Gain BandwidthProduct vs
SupplyVoltage
SUPPLYVOLTAGE, V (V)
CC
0481216
GAIN BANDW. PROD., GBP (kHz)
T=25 C R = 600
Ω
C = 100pF
amb
L L
1800
1400
1000
600
200
Figure6b : Gain bandwidthProduct vs
SupplyVoltage
SUPPLY VOLTAGE, V (V)
CC
0481216
60
50
40
30
20
PHASE MARGIN, m (Degrees)
T=25 C R = 10k
Ω
C = 100pF
amb
L L
φ
Figure 7a : Phase Margin vs Supply Voltage
SUPPLY VOLTAGE, V (V)
CC
0481216
60
50
40
30
20
PHASE MARGIN, m (Degrees)φ
T=25 C R=600
Ω
C = 100pF
amb
L L
Figure7b : Phase Marginvs Supply Voltage
TS914
7/13
Page 8
150
100
50
0
10 100
1000
10000
FREQUENCY (Hz)
=10V
=25 CT
amb
V
CC
=100
Ω
R
S
EQUIVALENTINPUT
VOLTAGE NOISE (nV/VHz)
Figure 8 : InputVoltage Noise vs Frequency
TS914
8/13
Page 9
** Standard Linear Ics Macromodels, 1993. ** CONNECTIONS : * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIVEPOWER SUPPLY * 5 NEGATIVEPOWER SUPPLY .SUBCKT TS914_3 1 3 2 4 5 (analog)
********************************************************** .MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F * INPUT STAGE
CIP 2 5 1.000000E-12 CIN 1 5 1.000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 5 1 RIP 10 11 6.500000E+00 RIN 15 16 6.500000E+00 RIS 11 15 1.271505E+01 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 0.000000E+00 VOFN 13 14 DC 0
IPOL 13 5 4.000000E-05 CPS 11 15 2.125860E-08 DINN 1713 MDTH 400E-12 VIN 17 5 0.000000e+00 DINR 1518 MDTH 400E-12 VIP 4 18 0.000000E+00 FCP 4 5 VOFP 5.000000E+00 FCN 5 4 VOFN 5.000000E+00 * AMPLIFYING STAGE FIP 5 19 VOFP 2.750000E+02 FIN 5 19 VOFN 2.750000E+02 RG1 19 5 1.916825E+05 RG2 19 4 1.916825E+05 CC 1929 2.200000E-08 HZTP 30 29 VOFP 1.3E+03
HZTN 5 30 VOFN 1.3E+03 DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 3800 VIPM 28 4 150 HONM 21 27 VOUT 3800 VINM 5 27 150 EOUT 26 23 19 5 1 VOUT 23 5 0 ROUT 26 3 75 COUT 3 5 1.000000E-12 DOP 19 68 MDTH 400E-12 VOP 4 25 1.724 HSCP 68 25 VSCP1 0.8E8 DON 69 19 MDTH 400E-12 VON 24 5 1.7419107 HSCN 24 69 VSCN1 0.8E+08 VSCTHP 60 61 0.0875 ** VSCTHP = le seuil au dessus de vio * 500 ** c.a.d 275U-000U dus a l’offset DSCP1 61 63 MDTH 400E-12 VSCP1 63 64 0 ISCP 64 0 1.000000E-8 DSCP2 0 64 MDTH 400E-12 DSCN2 0 74 MDTH 400E-12 ISCN 74 0 1.000000E-8 VSCN1 73 74 0 DSCN1 71 73 MDTH 400E-12 VSCTHN 71 70 -0.55 ** VSCTHN = le seuil au dessous de vio * 2000 ** c.a.d -375U-000U dus a l’offset ESCP 60 0 2 1 500 ESCN 70 0 2 1 -2000 .ENDS
Applies to : TS914I,AI,BI
.
RAIL TO RAIL INPUTAND OUTPUT VOLTAGERANGES
.
STANDBY POSITION: REDUCED CON­SUMPTION(1µA) AND HIGH IMPEDANCE OUTPUTS
.
.
EXTREMELYLOWINPUT BIASCURRENT :
1pA TYP
.
LOW INPUT OFFSETVOLTAGE:
1.5mVmax.
.
SPECIFIEDFOR 600Ω AND 100Ω LOADS
.
LOW SUPPLYCURRENT : 400µA/Ampli
.
SPEED: 1.3MHz- 1.3V/µs
MACROMODEL
TS914
9/13
Page 10
** Standard Linear Ics Macromodels, 1993. ** CONNECTIONS : * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIVEPOWER SUPPLY * 5 NEGATIVEPOWER SUPPLY * 6 STANDBY .SUBCKT TS914_5 1 3 2 4 5 (analog)
********************************************************** .MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F * INPUT STAGE
CIP 2 5 1.000000E-12 CIN 1 5 1.000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 5 1 RIP 10 11 6.500000E+00 RIN 15 16 6.500000E+00 RIS 11 15 7.322092E+00 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 0.000000E+00 VOFN 13 14 DC 0 IPOL 13 5 4.000000E-05 CPS 11 15 2.498970E-08 DINN 1713 MDTH 400E-12 VIN 17 5 0.000000e+00 DINR 1518 MDTH 400E-12 VIP 4 18 0.000000E+00 FCP 4 5 VOFP 5.750000E+00 FCN 5 4 VOFN 5.750000E+00 ISTB0 5 4 500N * AMPLIFYING STAGE FIP 5 19 VOFP 4.400000E+02 FIN 5 19 VOFN 4.400000E+02 RG1 19 5 4.904961E+05 RG2 19 4 4.904961E+05 CC 1929 2.200000E-08 HZTP 30 29 VOFP 1.8E+03
HZTN 5 30 VOFN 1.8E+03 DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 3800 VIPM 28 4 230 HONM 21 27 VOUT 3800 VINM 5 27 230 EOUT 26 23 19 5 1 VOUT 23 5 0 ROUT 26 3 82 COUT 3 5 1.000000E-12 DOP 19 68 MDTH 400E-12 VOP 4 25 1.724 HSCP 68 25 VSCP1 0.8E+08 DON 69 19 MDTH 400E-12 VON 24 5 1.7419107 HSCN 24 69 VSCN1 0.8E+08 VSCTHP 60 61 0.0875 ** VSCTHP = le seuil au dessus de vio * 500 ** c.a.d 275U-000U dus a l’offset DSCP1 61 63 MDTH 400E-12 VSCP1 63 64 0 ISCP 64 0 1.000000E-8 DSCP2 0 64 MDTH 400E-12 DSCN2 0 74 MDTH 400E-12 ISCN 74 0 1.000000E-8 VSCN1 73 74 0 DSCN1 71 73 MDTH 400E-12 VSCTHN 71 70 -0.55 ** VSCTHN = le seuil au dessous de vio * 2000 ** c.a.d -375U-000U dus a l’offset ESCP 60 0 2 1 500 ESCN 70 0 2 1 -2000 .ENDS
Applies to : TS914I,AI,BI
TS914
10/13
Page 11
ELECTRICALCHARACTERISTICS
V
CC
+
= 3V, V
CC
-
= 0V, RL,CLconnectedto VCC/2, T
amb
=25oC
(unlessotherwise specified)
Symbol Conditions Value Unit
V
io
0mV
A
vd
RL= 10kΩ 10 V/mV
I
CC
No load, per operator 100 µA
V
icm
-0.2 to 3.2 V
V
OH
RL= 600Ω 2.6 V
V
OL
RL= 600Ω 300 mV
I
sink
VO=3V 40 mA
I
source
VO=0V 40 mA
GBP R
L
= 10k
Ω,
CL= 100pF, F = 100kHz 0.8 MHz
SR RL= 10k
Ω,
CL= 100pF 0.5 V/µs
∅m 30 Degrees
TS914
11/13
Page 12
PACKAGE MECHANICALDATA
14 PINS - PLASTICDIP
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787 E 8.5 0.335
e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
i 5.1 0.201 L 3.3 0.130 Z 1.27 2.54 0.050 0.100
TS914
12/13
Page 13
PACKAGE MECHANICALDATA
14 PINS - PLASTICMICROPACKAGE(so)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.STMicroelectronics productsarenot authorized foruse as criticalcomponents inlife support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.75 0.069 a1 0.1 0.2 0.004 0.008 a2 1.6 0.063
b 0.35 0.46 0.014 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.020
c1 45
o
(typ.) D 8.55 8.75 0.336 0.334 E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.150 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.020 0.050
M 0.68 0.027
S8
o
(max.)
TS914
13/13
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