Datasheet TS652 Datasheet (SGS Thomson Microelectronics)

DIFFERENTIAL VARIABLE GAIN AMPLIFIER

■ LOW NOISE : 4.6nV/√Hz

■ LOW DISTORTION

■ HIGH SLEW RATE : 90V/µs

■ WIDE BANDWIDTH : 52MHz @ -3dB &

18dB gain

■ GAIN PROGRAMMABLE from -9dB to

+30dB with 3dB STEPS

TS652

■ POWER DOWN FUNCTION

DESCRIPTION

The TS652 is a differential digitally controled vari­able gain amplifier featuring a high slew rate of
90V/µs, a large bandwidth, a very low distortion
and a very low current and voltage noise.

The gaincan be setfrom -9dB to +30dB through a
4bit digital word, with 3dB steps.

The gain monotonicity is guaranteed by design.
This device is particularly intended for applications

such as preamplification in telecommunication
systems using multiple carriers.

APPLICATION

■ Preamplifier and automatic gain control for

Assymetric Digital Subscriber Line (ADSL).

ORDER CODE

Package

Part Number Temperature Range

D

TS652ID -40, +85°C •

D

SO-14

(Plastic Micropackage)

PIN CONNECTIONS (top view)

1

+Vcc1

Input1

2

3

Input 2

4

GC1

5

GC2

6

GC3

Gain Control

Logic Decoder

7

GC4

14

+Vcc2

13

Output 1

Output 2

12

11

Pow erDow n

10

-Vcc

9

AGND

8

DGN D

D=Small Outline Package (SO) - also available in Tape & Reel (DT)

May 2000

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TS652

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

T

T

R

Supply voltage

CC

V

Input Voltage

i

Operating Free Air Temperature Range TS652ID -40 to + 85 °C

oper

Storage Temperature -65 to +150 °C

std

T

Maximum Junction Temperature 150 °C

j

Thermal Resistance Junction to Case 15 °C/W

thjc

Output Short Circuit Duration Infinite

1. All voltages values are with respect to network terminal.

2. The magnitude of input and output voltages must never exceed V

OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V

Supply Voltage 5 to 12 V

CC

Common Mode Input Voltage

icm

1)

2)

+0.3V.

CC

14 V

0to14 V

+ VCC/2

V

2/9

TS652

ELECTRICAL CHARACTERISTICS. VCC= ±6Volts, T

=25°C (unless otherwise specified).

amb

Symbol Parameter Test Condition Min. Typ. Max Unit

DC PERFORMANCE

V

Voltage on the Input Pin 0 V

i

I

TotalSupply Current

CC

∆V

I

ccpdw

Power Down Total Consumption Power Down Mode 150 µA
Differential Input Offset Voltage

OFFSET

SVR Supply Voltage Rejection Ratio

No load, V

V

=0,AV= 30dB

in

= 0dB

A

V

out

=0

28 mA

6mV

50 80 dB

AC PERFORMANCE

Z

Input Impedance 100kΩ//5pF

in

Z

V

V

P

A

A

R

Power Down Output Impedance Power Down Mode 100kΩ 150kΩ//5pF

out

High Level Output Voltage

OH

R

connected to GND

L

Low Level Output Voltage

OL

R

connected to GND

L

Voltage Gain F= 1MHz

A

V

Gain monotonicity guaranteed by design
Precision of the Voltage Gain F= 1MHz -1 1 dB

AV

Step Value F= 1MHz 2.4 3 3.6 dB

vstep

Gain Mismatch between Both

vmin

Channels

Bandwidth @ -3dB

R

B

w

Bandwidth Roll-off

bw

Bandwidth @ -3dB

I

o

R

L

= 500Ω

L

= 15pF

C

L

= 500Ω,CL= 15pF

SR Slew Rate (gain independent)

= 500Ω

R

L

R

L

= 500Ω

4 4.5 V

-4.5 -4 V

-9 30 dB

F= 1MHz 1 dB

= -9dB

A

V

= 0dB

A

V

= +18dB

A

V

= +30dB

A

V

A

= +30dB, F = 1MHz

V

55 110 200
32 69 132
26 52 100
10 18 36

0.08 dB
|Source| 17 28
Sink 17 22

= 2Vpeak

V

o

50 100 V/µs

NOISE AND DISTORTION

in Equivalent Input Noise Current F = 100kHz 1.5 pA/√Hz

en Equivalent Input Noise Voltage

THD30 Harmonic Distorsion

Third Order Intermodulation

IM3

Product
F1 = 180kHz, F2 = 280kHz

Third Order Intermodulation

IM3

Product
F1 = 70kHz, F2 = 80kHz

F = 100kHz
A

= 30dB

V

1Vpeak, F = 150kHz,

= +30dB, RL= 500Ω//15pF

A

V

H2 -70
H3 -93
H4 -98
H5 -99

V

= 1Vpeak, AV= +30dB

out

= 500Ω//15pF

R

L

@ 80kHz -77
@ 380kHz -85
@640kHz -86
@740kHz -87

V

= 1Vpeak, AV= +30dB

out

= 500Ω//15pF

R

L

@ 60kHz -77
@ 90kHz -79
@220kHz -83
@230kHz -84

4.6 nV/√Hz

MHz

mA

dBc

dBc

dBc

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TS652

DIGITAL INPUTS

Symbol Parameter Min. Typ. Max. Unit

GC1, GC2,GC3

and GC4

SIMPLIFIED SCHEMATIC

The TS652 consists of two independent channels.
Each channel has twostages. The first is a very low noise digitally controlled variable gain amplifier(range

0 to 18dB).
The TS652 features a high input impedance and a lownoise current. To minimize the overall noise figure,

the source impedance must be less than 3kΩ.
This value gives an equal contribution of voltage and current noises.
The second stage is a gain/attenuation stage (+12dB to -9dB) featuring a low output impedance.
This output stage can drive loads as low as 500Ω.

Low Level 0 0.8
High Level 2 3.3

v

_

Input1

+

+

_

_

v

v

_

+

+

Ouput1

+Vcc1

-Vcc

Analog GND
(AGND)

V

Input2

POWER DOWN MODE POSITION

Input Output

+Vcc

-Vcc

+
_

+
_

v

v

v

GAIN CONTROL

LOGIC DECODER

+Vcc

-Vcc

Ouput2

+Vcc2

GC1
GC2

GC3
GC4

Digital GND
(DGND)

Power Down

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TS652

BANDWIDTH

The small signal bandwidth is almost constant for gains between +18dB to 0dB and is in the order of
52MHz to 70MHz respectively. For 30dB gain the bandwidth is around 18MHz.

The power bandwidth is typically equal to 30MHz for 2V peak to peak signals.

MAXIMUM INPUT LEVEL

The input level must not exceed the following values :
negative peak value: must be greater than -VCC+ 1.5V
positive peak value: must be less than +VCC- 1.5V
For example, if a +/-6V power supply is used, the input signal can swing between -4.5V and +4.5V.
These values are due to common mode input range limitations of the input stage of the first amplifier.
Some other limitations may occur, due to the slew rate of the first operational amplifier (typically in the or-

der of 300V/µs). This means that the maximum input signal decreases at high frequency.

SINGLE SUPPLY OPERATION

The incoming signal is AC coupled to the inputs.
The TS652 can be used either with a dual or a single supply. If a single supply is used, the inputs are bi-

ased to the mid supply voltage (+V
any noise present on the supply rail.

The AGNDpin (9)must be connected to +V
is 8µA for both amplifiers. A resistor divider structure can be used. Two resistances should be chosen by
considering 8µA as the 1% of the total current through these resistances. For a single +12V supply volt­age, two resistances of 7.5kΩ can be used. The differential input consists of a high pass circuit, formed by
the 1µF capacitor and a 1kΩ resistance and gives a break frequency of 160Hz.

). This bias network must be carefully designed, in order to reject

CC/2

. The bias current of the second stage (inverting structure)

CC/2

SINGLE +12V SUPPLY OF THE TS652

1µF

IN+

12V

47k

47k

5/9

IN-

1k

1k

10nF 1µF

1µF

10nF

+Vcc1

Input 1

Input 2

GC1

GC2

GC3

GC4

100nF

1

2

3

4

5

6

7

TS652

Gain Control

Logic Decoder

+Vcc2

14

Output 1

13

Output 2

12

Power Down

11

-Vcc

10

AGND

9

DGND

8

10nF

100nF 10µF

12V

7.5k

10nF 1µF

7.5k

12V

TS652

GAIN CONTROL

The gain and the power down mode is programmed with a 4 bit digital word :

Digital

Control

Total Gain

(dB)

First Stage

Gain

(dB)

Second Stage

Gain

(dB)

Maximum

Input Level

Bandwidth

Small Signal

Eq. Input

Noise

(nV/√Hz)

$0000 -9 0 -9 2.8Vrms 110mHZ 29
$0001 -6 0 -6 2.8Vrms 100MHz 26
$0010 -3 0 -3 2.8Vrms 85MHz 23
$0011 0 0 0 2.8Vrms 69MHz 22
$0100 3 3 0 2Vrms 63MHz 16
$0101 6 6 0 1.4Vrms 58MHz 12
$0110 9 9 0 1Vrms 56MHz 9

$0111 12 12 0 0.7Vrms 55MHz 7
$1000 15 15 0 0.5Vrms 54MHz 6
$1001 18 18 0 0.35Vrms 52MHz 4.8
$1010 21 21 3 0.25Vrms 42MHz 4.7
$1011 24 24 6 175mVrms 30MHz 4.7
$1100 27 27 9 125mVrms 24MHz 4.6
$1101 30 30 12 88mVrms 18MHz 4.6

$1110 30 30 12 88mVrms 18MHz 4.6

$1111 30 30 12 88mVrms 18MHz 4.6

The gain is the same for both channels.
The digital inputs are CMOS compatible. The supply voltage of the logic decoder used to transcode the digital word can be either 3.3V or 5V or V

CC

.

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TS652

Closed Loop Gain vs. Frequency

40

30
20

10

0

-10

Gain (dB)

-20

-30

-40

10kHz 100kHz 1MHz 10MHz 100MHz

Frequency

Negative & Positive Slew Rate vs. Gain

110

105

SR-

100

95

SR+

90
85
80

SLEW RATE (V/µs)

75
70

-9 -6 -3 0 3 6 9 12 15 18 21 24 27 30

GAIN (dB)

Bandwidth vs. Gain

100

90
80
70
60
50
40
30

BANDWIDTH (MHz)

20
10

-9 -6 -3 0 3 6 9 12 15 18 21 24 27 30

GAIN (dB)

Equivalent Input Voltage Noise vs. Gain

30
28
26
24
22
20
18
16
14
12
10

8
6
4

VOLTAGENOISE (nV/VHz)

2
0

-9 -6 -3 0 3 6 9 12 15 18 21 24 27 30

GAIN (dB)

Gain Switching (+15dB to -9dB)

6

GC4 command

5
4
3
2

1

0

-1

Ouput Signal (V)

-2

-3

-4

0

measurement conditions: Vcc=±6V, Rload=500

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Ouput Signal

5µs

10µs15µs

Time

20µs

Ω,

Tamb=25°C

Gain Switching (+30dB to +9dB)

6

GC1 command

5
4
3
2

1

0

-1

OuputSignal (V)

-2

-3

-4

05µs10µs

Time

Ouput Signal

15µs

20µs

TS652

Output/InputIsolation in PowerDown Mode vs.
Frequency

-50

-60

-70

-80

-90

Isolation (dB)

-100

-110

10kHz

100kHz 1MHz 10MHz

Frequency

3rd Order Intermodulation

(2 tones : 180kHz and 280kHz)

-70

3rd Order Intermodulation

(2 tones : 180kHz and 280kHz)

-70

-75

60kHZ
90kHZ

-80

IM3 (dBc)

220kHZ

-85

230kHZ

-90
012345

Voutpeak (V)

-75

80kHZ

-80

IM3 (dBc)

380kHZ

-85

640kHZ

740kHZ

-90
012345

Voutpeak (V)

measurement conditions: Vcc=±6V, Rload=500

Ω,

Tamb=25°C

8/9

PACKAGE MECHANICAL DATA

14 PINS - PLASTIC MICROPACKAGE (SO)

TS652

Dim.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 1.75 0.069
a1 0.1 0.2 0.004 0.008
a2 1.6 0.063

b 0.35 0.46 0.014 0.018
b1 0.19 0.25 0.007 0.010

C 0.5 0.020
c1 45° (typ.)

D (1) 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 7.62 0.300

F (1) 3.8 4.0 0.150 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.020 0.050

M 0.68 0.027

S8°(max.)

Note : (1) D and F do not include mold flash or protrusions - Mold flash or protrusions shall not exceed 0.15mm (.066 inc) ONLY FOR DATA BOOK.

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