Page 1
TS3V914
3V RAIL TO RAIL
CMOS QUAD OPERATIONALAMPLIFIER
October 1997
.
DEDICATEDTO 3.3V APPLICATIONSAND
BATTERY-SUPPLIED(fully specified at
V
CC
= 3V and 5V)
.
RAIL TORAIL INPUTAND OUTPUT
VOLTAGERANGES
.
SINGLE(OR DUAL) SUPPLYOPERATION
FROM 2.7V TO16V
.
EXTREMELYLOW INPUTBIAS CURRENT :
1pA TYP
.
LOW INPUTOFFSETVOLTAGE: 5mVmax.
.
SPECIFIEDFOR 600Ω AND 100Ω LOADS
.
LOW SUPPLYCURRENT: 200µA/Ampli
.
SPICEMACROMODEL INCLUDED IN THIS
SPECIFICATION
Invert ing Input 2
Non-inve rting Input 2
Non-inve rting Input 1
CCV
-
CC
V
1
2
3
4
8
5
6
7
9
10
11
12
13
14
+
Output 3
Output 4
Non-inve rting Input 4
Invertin g Input 4
Non-inve rting Input 3
Invertin g Input 3
-
+
-
+
-
+
-
+
Output 1
Inverting Input 1
Output 2
PIN CONNECTIONS (top view)
DESCRIPTION
The TS3V914 is a RAIL TO RAIL quad CMOS
operational amplifier designed to operate with a
single 3V supply voltage.
The input voltage range V
icm
includes the two
supplyrails V
CC
+
and V
CC
-
.
The output reaches:
•
V
CC
-
+50mV V
CC
+
-50mV with RL= 10kΩ
•
V
CC
-
+350mV V
CC
+
-350mV with RL= 600Ω
This product offersa broad supply voltageoperating rangefrom 2.7V to16V anda supply current of
only 200µA/amp.(V
CC
= 3V).
Source and sink output current capability is typically 40mA (at V
CC
= 3V), fixed by an internal
limitationcircuit.
SGS-THOMSONis offeringa dualop-ampwith the
same features: TS3V912.
ORDER CODES
Part Number Temperature Range
Package
ND
TS3V914I/AI -40, +125
o
C ••
N
DIP14
(Plastic Package)
D
SO14
(Plastic Micropackage)
1/12
Page 2
ABSOLUTEMAXIMUMRATINGS
Symbol Parameter Value Unit
V
CC
Supply Voltage - (note 1) 18 V
V
id
Differential Input Voltage - (note 2) ±18 V
V
i
Input Voltage - (note 3) -0.3 to 18 V
I
in
Current on Inputs ±50 mA
I
o
Current on Outputs ±130 mA
T
oper
Operating Free AirTemperature RangeI -40 to +125
o
C
T
stg
Storage Temperature -65 to +150
o
C
Notes : 1. All voltage values, exceptdifferential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to theinverting input terminal.
3. The magnitudeof input and output voltages must never exceed V
CC
+
+0.3V.
OPERATINGCONDITIONS
Symbol Parameter Value Unit
V
CC
Supply Voltage 2.7to 16 V
V
icm
Common Mode Input Voltage Range V
CC
-
-0.2 to V
CC
+
+0.2 V
Non-inverting
Input
Inverting
Input
Internal
Vref
Output
V
CC
V
CC
SCHEMATICDIAGRAM (1/4TS3V914)
TS3V914
2/12
Page 3
ELECTRICAL CHARACTERISTICS
V
CC
+
=3V,V
CC
-
=0V,RL,CLconnectedto VCC/2, T
amb
=25oC (unlessotherwise specified)
Symbol Parameter
TS3V914I/AI
Unit
Min. Typ. Max.
V
io
Input Offset Voltage(Vic=Vo=VCC/2) TS3V914
TS3V914A
T
min.
≤ T
amb
≤ T
max.
TS3V914
TS3V914A
10
5
12
7
mV
DV
io
Input Offset VoltageDrift 5 µV/oC
I
io
Input Offset Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 100
200
pA
I
ib
Input Bias Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 150
300
pA
I
CC
Supply Current (per amplifier, A
VCL
= 1, no load)
T
min.
≤ T
amb
≤ T
max.
200 300
400
µA
CMR Common Mode Rejection Ratio
V
ic
= 0 to 3V, Vo= 1.5V 70
dB
SVR Supply Voltage Rejection Ratio (V
CC
+
= 2.7 to 3.3V, VO=VCC/2) 40 70 dB
A
vd
Large Signal Voltage Gain (RL= 10kΩ,VO= 1.2V to 1.8V)
T
min.
≤ T
amb
≤ T
max.
3
2
10 V/mV
V
OH
High Level Output Voltage(Vid= 1V)
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ
R
L
= 600Ω
2.9
2.3
2.8
2.1
2.96
2.6
2
V
V
OL
Low Level Output Voltage(Vid= -1V)
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ
R
L
= 600Ω
50
300
900
100
400
150
600
mV
I
o
Output Short Circuit Current (Vid= ±1V) Source (Vo=V
CC
−
)
Sink (V
o=VCC
+
)
40
40
mA
GBP Gain Bandwidth Product
(A
VCL
= 100, RL= 10kΩ,CL= 100pF, f = 100kHz) 0.8
MHz
SR
+
Positive Slew Rate
A
VCL
=1,RL= 10kΩ,Vi=1.3V to 1.7V, CL= 100pF 0.5
V/µs
SR
-
Negative Slew Rate 0.4 V/µs
∅m PhaseMargin 30 Degrees
e
n
Equivalent Input Noise Voltage (Rs= 100Ω, f = 1kHz) 30
nV
√Hz
V
O1/VO2
Channel Separation (f = 1kHz) 120 dB
Note 1: Maximum values including unavoidable inaccuracies of theindustrial test.
TS3V914
3/12
Page 4
ELECTRICAL CHARACTERISTICS
V
CC
+
=5V,V
CC
-
=0V,RL,CLconnectedto VCC/2, T
amb
=25oC (unlessotherwise specified)
Symbol Parameter
TS3V914I/AI
Unit
Min. Typ. Max.
V
io
Input Offset Voltage(Vic=Vo=VCC/2) TS3V914
TS3V914A
T
min.
≤ T
amb
≤ T
max.
TS3V914
TS3V914A
10
5
12
7
mV
DV
io
Input Offset VoltageDrift 5 µV/oC
I
io
Input Offset Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 100
200
pA
I
ib
Input Bias Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 150
300
pA
I
CC
Supply Current (per amplifier, A
VCL
= 1, no load)
T
min.
≤ T
amb
≤ T
max.
230 350
450
µA
CMR Common Mode Rejection Ratio
V
ic
= 1.5 to 3.5V, Vo= 2.5V 50 75
dB
SVR Supply Voltage Rejection Ratio (V
CC
+
= 3 to 5V,VO=VCC/2) 50 80 dB
A
vd
Large Signal Voltage Gain (RL= 10kΩ,VO= 1.5V to 3.5V)
T
min.
≤ T
amb
≤ T
max.
10
7
30 V/mV
V
OH
High Level Output Voltage(Vid= 1V)
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ
R
L
= 600Ω
4.90
4.25
4.8
4.1
4.95
4.65
3.7
V
V
OL
Low Level Output Voltage(Vid= -1V)
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
RL= 10kΩ
R
L
= 600Ω
50
350
1400
100
500
150
750
mV
I
o
Output Short Circuit Current (Vid= ±1V) Source (Vo=V
CC
−
)
Sink (V
o=VCC
+
)
45
45
60
60
mA
GBP Gain Bandwidth Product
(A
VCL
= 100, RL= 10kΩ,CL= 100pF, f = 100kHz) 0.9
MHz
SR
+
Positive Slew Rate
A
VCL
=1,RL= 10kΩ,Vi=1V to 4V, CL= 100pF 0.8
V/µs
SR
-
Negative Slew Rate 0.5 V/µs
∅m PhaseMargin 30 Degrees
Note 1: Maximum values including unavoidable inaccuracies of theindustrial test.
TS3V914
4/12
Page 5
TYPICALCHARACTERISTICS
CC
SUPP LY VOLTAGE, V (V)
0481216
T=25 C
A=1
V=V /2
amb
VCL
OCC
CC
µ
SUPPLY CURRENT, I (
A)
600
500
400
300
200
100
Figure 1 : Supply Current (each amplifier)
versusSupply Voltage
25 50 75 100 125
INPUT BIAS CURRENT, I (pA)
ib
V = 10V
V=5V
No load
CC
i
100
10
1
amb
TEMPERATURE, T ( C)
Figure2 : Input BiasCurrent versus Temperature
1
OUTPUT VOLTAGE, V (V)
OL
amb
id
T=25C
V = -100mV
V = +5V
CC
V = +3V
CC
030507090
OL
OUTPUT CURRENT, I (mA)
2
3
4
5
Figure 4a : Low Level OutputVoltage versus
Low LevelOutput Current
2
OUTPUT VOLTAGE, V (V)
OL
amb
id
T=25C
V = -100mV
0
V = 10V
CC
V = 16V
CC
OL
OUTPUT CURRENT, I (mA)
4
6
8
10
30 50 70 90
Figure4b :Low Level Output Voltage versus
Low Level OutputCurrent
5
-70 -40 -20 0
OUTPUT VOLTAGE, V (V)
OH
amb
id
T=25C
V = 100m V
V = +5V
CC
V=+3V
CC
4
3
2
1
0
OH
OUTPUT CURRENT, I (mA)
Figure 3a : HighLevel OutputVoltage versus
HighLevel OutputCurrent
4
0
OUTPUT VOLTAGE, V (V)
OH
V = +16V
CC
V = +10V
CC
OH
OUTPUT CURRENT, I (mA)
12
8
20
16
-70 -40 -20 0
amb
id
T=25C
V = 100m V
Figure3b :High Level OutputVoltage versus
High Level OutputCurrent
TS3V914
5/12
Page 6
50
40
30
20
10
0
-10
GAIN (dB)
PHASE (Degrees)
0
45
90
135
180
FREQUENCY, f (Hz)
PHASE
GAIN
Phase
Margin
Gain
Bandwidth
Product
6
10
10
23
10
4
10510
7
10
T=25 C
V = 10V
R = 10k
Ω
C = 100pF
A =100
amb
CC
L
L
VCL
Figure 5a : Open Loop FrequencyResponse
and PhaseShift
50
40
30
20
10
0
-
10
GAIN (dB)
PHASE (Degrees)
0
45
90
135
180
FREQUENCY, f (Hz)
PHASE
GAIN
Phase
Margin
Gain
Bandwidth
Product
6
10
10
23
10
4
10
5
10
7
10
T=25 C
V=10V
R = 600
Ω
C = 100pF
A = 100
amb
CC
L
L
VCL
Figure5b :Open Loop FrequencyResponse
and PhaseShift
SUPPLYVOLTAGE, V (V)
CC
0481216
1800
GAINBANDW. PROD., GBP (kHz)
T=25 C
R = 10k
Ω
C = 100pF
amb
L
L
1400
1000
600
200
Figure 6a : Gain BandwidthProduct versus
SupplyVoltage
SUPPLYVOLTAGE, V (V)
CC
0481216
GAIN BANDW. PROD., GBP (kHz)
T=25 C
R = 600
Ω
C = 100pF
amb
L
L
1800
1400
1000
600
200
Figure6b :Gain bandwidthProduct versus
SupplyVoltage
SUPPLY VOLTAGE, V (V)
CC
0481216
60
50
40
30
20
PHASE MARGIN, m (Degrees)
T=25 C
R = 10k
Ω
C = 100pF
amb
L
L
φ
Figure 7a : PhaseMargin versus SupplyVoltage
SUPPLY VOLTAGE, V (V)
CC
0481216
60
50
40
30
20
PHASE MARGIN, m (Degrees)φ
T=25 C
R=600
Ω
C = 100pF
amb
L
L
Figure7b :Phase Marginversus Supply Voltage
TS3V914
6/12
Page 7
TEMPERATURE
RANG E
3 V
19
A
I
N
RAIL TO RAIL
OP AMPs
4
-40 Cto +125 C
OFFSET VOLTAGE
SELECTION
”Nothing”
A
10mV ma x.
5mV ma x.
I
ST
3V
FAMILY
PACKAGES
DIP
S0
S0 Tape &Re el
N
D
DT
14
QUAD - 200µA/amp - 0.8MHz
QUAD - 200µA/amp - 0.8MHz
+ STANDBYpos ition with
High Impedance Outputs
04
ORDERING INFORMATION
150
100
50
0
10 100
1000
10000
FREQUENCY (Hz)
=10V
=25 CT
amb
V
CC
=100
Ω
R
S
EQUIVALENTINPUT
VOLTAGE NOISE (nV/VHz)
Figure 8: Input Voltage Noiseversus Frequency
TS3V914
7/12
Page 8
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVEPOWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
.SUBCKT TS3V914_3 1 3 2 4 5(analog)
**********************************************************
.MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 6.500000E+00
RIN 15 16 6.500000E+00
RIS 11 15 1.271505E+01
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0.000000E+00
VOFN 13 14 DC 0
IPOL 13 5 4.000000E-05
CPS 11 15 2.125860E-08
DINN 17 13 MDTH 400E-12
VIN 17 5 0.000000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 0.000000E+00
FCP 4 5 VOFP 5.000000E+00
FCN 5 4 VOFN 5.000000E+00
* AMPLIFYINGSTAGE
FIP 5 19 VOFP 2.750000E+02
FIN 5 19 VOFN 2.750000E+02
RG1 19 5 1.916825E+05
RG2 19 4 1.916825E+05
CC 19 29 2.200000E-08
HZTP 30 29 VOFP 1.3E+03
HZTN 5 30 VOFN 1.3E+03
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 3800
VIPM 28 4 150
HONM 21 27 VOUT 3800
VINM 5 27 150
EOUT 26 23 19 5 1
VOUT 23 5 0
ROUT 26 3 75
COUT 3 5 1.000000E-12
DOP 19 68 MDTH 400E-12
VOP 4 25 1.724
HSCP 68 25 VSCP1 0.8E8
DON 69 19 MDTH 400E-12
VON 24 5 1.7419107
HSCN 24 69 VSCN1 0.8E+08
VSCTHP 60 61 0.0875
** VSCTHP = le seuil au dessus de vio
* 500
** c.a.d 275U-000U dus a l’offset
DSCP1 61 63 MDTH 400E-12
VSCP1 63 64 0
ISCP 64 0 1.000000E-8
DSCP2 0 64 MDTH 400E-12
DSCN2 0 74 MDTH 400E-12
ISCN 74 0 1.000000E-8
VSCN1 73 74 0
DSCN1 71 73 MDTH 400E-12
VSCTHN 71 70 -0.55
** VSCTHN = le seuil au dessous devio
* 2000
** c.a.d -375U-000U dus a l’offset
ESCP 60 0 2 1 500
ESCN 70 0 2 1 -2000
.ENDS
Applies to : TS3V914I,AI,BI
.
RAIL TORAIL INPUTAND OUTPUT
VOLTAGERANGES
.
STANDBY POSITION: REDUCED CONSUMPTION(1µA) ANDHIGH IMPEDANCE
OUTPUTS
.
SINGLE(OR DUAL) SUPPLYOPERATION
FROM 2.7V TO16V (±1.35V to ±8V)
.
EXTREMELYLOW INPUT BIASCURRENT :
1pA TYP
.
LOW INPUTOFFSETVOLTAGE:
1.5mVmax.
.
SPECIFIEDFOR 600Ω AND 100Ω LOADS
.
LOW SUPPLYCURRENT : 400µA/Ampli
.
SPEED: 1.3MHz - 1.3V/µs
MACROMODEL
TS3V914
8/12
Page 9
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVEPOWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
* 6 STANDBY
.SUBCKT TS3V914_5 1 3 2 4 5(analog)
**********************************************************
.MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 6.500000E+00
RIN 15 16 6.500000E+00
RIS 11 15 7.322092E+00
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0.000000E+00
VOFN 13 14 DC 0
IPOL 13 5 4.000000E-05
CPS 11 15 2.498970E-08
DINN 17 13 MDTH 400E-12
VIN 17 5 0.000000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 0.000000E+00
FCP 4 5 VOFP 5.750000E+00
FCN 5 4 VOFN 5.750000E+00
ISTB0 5 4 500N
* AMPLIFYINGSTAGE
FIP 5 19 VOFP 4.400000E+02
FIN 5 19 VOFN 4.400000E+02
RG1 19 5 4.904961E+05
RG2 19 4 4.904961E+05
CC 19 29 2.200000E-08
HZTP 30 29 VOFP 1.8E+03
HZTN 5 30 VOFN 1.8E+03
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 3800
VIPM 28 4 230
HONM 21 27 VOUT 3800
VINM 5 27 230
EOUT 26 23 19 5 1
VOUT 23 5 0
ROUT 26 3 82
COUT 3 5 1.000000E-12
DOP 19 68 MDTH 400E-12
VOP 4 25 1.724
HSCP 68 25
VSCP1 0.8E+08
DON 69 19 MDTH 400E-12
VON 24 5 1.7419107
HSCN 24 69
VSCN1 0.8E+08
VSCTHP 60 61 0.0875
** VSCTHP = le seuil au dessus de vio
* 500
** c.a.d 275U-000U dus a l’offset
DSCP1 61 63 MDTH 400E-12
VSCP1 63 64 0
ISCP 64 0 1.000000E-8
DSCP2 0 64 MDTH 400E-12
DSCN2 0 74 MDTH 400E-12
ISCN 74 0 1.000000E-8
VSCN1 73 74 0
DSCN1 71 73 MDTH 400E-12
VSCTHN 71 70 -0.55
** VSCTHN = le seuil au dessous devio
* 2000
** c.a.d -375U-000U dus a l’offset
ESCP 60 0 2 1 500
ESCN 70 0 2 1 -2000
.ENDS
Applies to : TS3V914I,AI,BI
TS3V914
9/12
Page 10
ELECTRICALCHARACTERISTICS
V
CC
+
= 3V, V
CC
-
= 0V, RL,CLconnectedto VCC/2, T
amb
=25oC
(unlessotherwise specified)
Symbol Conditions Value Unit
V
io
0mV
A
vd
RL= 10kΩ 10 V/mV
I
CC
No load, peroperator 100 µA
V
icm
-0.2 to 3.2 V
V
OH
RL= 600Ω 2.6 V
V
OL
RL= 600Ω 300 mV
I
sink
VO=3V 40 mA
I
source
VO=0V 40 mA
GBP R
L
= 10k
Ω,
CL= 100pF, F = 100kHz 0.8 MHz
SR RL= 10k
Ω,
CL= 100pF 0.5 V/µs
∅m 30 Degrees
TS3V914
10/12
Page 11
PM-DIP14.EPS
PACKAGEMECHANICAL DATA
14 PINS - PLASTICDIP
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
i 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100
DIP14.TBL
TS3V914
11/12
Page 12
PM-SO14.EPS
PACKAGEMECHANICAL DATA
14 PINS- PLASTICMICROPACKAGE(so)
Information furnished is believed tobe accurate and reliable. However,SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of suchinformation nor for any infringement of patents or other rights of third partieswhich may result
from its use. No license isgranted by implication or otherwise under anypatent or patent rights ofSGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are notauthorized for useas critical components in life
support devicesor systems without express written approval of SGS-THOMSON Microelectronics.
1997 SGS-THOMSON Microelectronics – Printed in Italy– AllRights Reserved
SGS-THOMSON Microelectronics GROUPOF COMPANIES
Australia - Brazil - Canada - China - France - Germany -Hong Kong - Italy -Japan - Korea - Malaysia - Malta - Morocco
The Netherlands - Singapore - Spain- Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
ORDER CODE:
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.75 0.069
a1 0.1 0.2 0.004 0.008
a2 1.6 0.063
b 0.35 0.46 0.014 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.020
c1 45
o
(typ.)
D 8.55 8.75 0.336 0.334
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.150 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.020 0.050
M 0.68 0.027
S8
o
(max.)
SO14.TBL
TS3V914
12/12
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