Page 1
®
FEATURES
I
= 12A
T(RMS)
V
DRM/VRRM
= 600V
IGT < 200µA
HIGH I
= 110A (tp = 10ms)
TSM
DESCRIPTION
TS1220-600B
SENSITIVE SCR
A
A
G
K
The TS1220-600B is us ing a high performance
TOPGLASS PNPN technology and is intended for
DPAK
(Plastic)
applications requiring high surge capability (like
power tools, crowbar protection, capacitive discharge ignition...).
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
DRM
V
RRM
I
T(RMS)
Repetitive peak off-state voltage
= 125°C RGK = 220
T
j
RMS on-state current
600 V
Ω
Tc= 105°C12 A
(180° conduction angle)
I
T(AV)
Average on-state current
Tc= 105°C8 A
(180° conduction angle)
I
TSM
Non repetitive surge peak on-state current
(T
initial = 25°C )
j
tp = 10 m s 110 A
tp = 8.3 ms 115
2
I
t
2
I
t Value for fusing
tp = 10 m s 40 A
2
s
dI/dt Critical rate of rise of on-state current
= 10 mA dIG /dt = 0.1 A/µs.
I
G
T
stg
T
j
T
May 1998 - Ed: A3
Storage junction temperature range
Operating junction temperature range
Maximum temperature for soldering dur ing 10s
50 A/µs
- 40 to + 150
- 40 to + 125
260
°
C
°
C
1/5
Page 2
TS1220-600B
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-c)
Rth(j-a) Junction to ambient (S = 0.5 cm
GATE CHARACTE RIST ICS
P
= 0.2W PGM = 3 W (tp = 20 µs) IGM = 1.2 A (tp = 20 µs)
G (AV)
Junction to case for D.C
(maximum values)
1.5
2
)70
ELECTRICAL CHARACTERI STICS
Symbol Test Conditions Type Value Unit
I
GT
V
GT
V
GD
V
RG
I
H
V
TM
I
DRM
VD=12V RL=140
VD=12V RL=140
VD=12V(DC) RL=33
IRG = 10µA Tj= 25°C MIN 8 V
IT=50mA IG=5mA RGK = 1k
ITM= 24A tp= 380µs Tj= 25°CMAX 1.6 V
VD= V
DRM RGK
Ω
Ω
Ω
= 220
Tj= 25°C MAX 200
Tj= 25°C MAX 0.8 V
Tj= 25°C MAX 0.1 V
Ω
Ω
Tj= 25°C MAX 5 mA
Tj= 25°C MAX 10
°
C/W
°
C/W
µ
A
µ
A
I
RRM
dV/dt V
VR= V
=67%V
D
RGK = 220
RRM
RGK = 220
DRM
ORDERING INFORMATION
TS 12 20 - 600 B
THYRISTOR
SENSITIVE
CURRENT
Ω
Ω
Tj= 125°C MAX 2 mA
Tj= 125°CMIN 5 V/µs
Add "-TR" suffix for Tape and Reel shipment
VOLTAGE
S ENSITIVITY
PACKAGE
B = DPAK
2/5
Page 3
TS1220-600B
Fig 1:
Maximum average power dissipation versus
average on-state current.
P(W)
14
12
10
8
α
α
α
α
α
6
4
2
I (A)
0
0123456789101112
Fig 3-1:
Average and D.C. on-state current versus
T(AV)
180°
α
α
case temperature.
I (A)
T(AV)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125
D.C.
α
Tcase(°C)
Fig 2:
Correlation between maximum average
power dissipation and maximum allowable temperatures (Tamb and Tcase).
Note: Rth=0°C/W is infinite heatsink.
Rth=0°C/W
Tcase (°C)
105
110
115
120
125
P(W)
14
α
13
12
11
10
9
8
7
6
5
Rth(j-a)=37°C/W
4
3
2
1
0
0 25 50 75 100 125
Fig 3-2:
Average and D.C. on-state current versus
Rth(j-a)=80°C/W
Tamb(°C)
ambient temperature (device mounted on FR4 with
recommended pad layout).
I (A)
T(AV)
2.0
1.8
1.6
1.4
α
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 25 50 75 100 125
T amb(°C)
Fig 4:
Relative variation of thermal impedance
junction to case versus pulse duration.
K=[Zth(j-c)/Rth(j-c)]
1.0
0.5
0.2
0.1
1E-3 1E-2 1E-1 1E+0
tp(s)
Fig 4-2:
Relative variation of thermal impedance
junction to ambient versus pulse duration (recomended pad layout).
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
tp(s)
0.01
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
3/5
Page 4
TS1220-600B
Fig 5:
Relative variation of gate trigger current and
holding current versus junction temperature.
I ,I [Tj]/I ,I [Tj=25°C]
GT H GT H
2.0
1.8
1.6
I
GT
1.4
1.2
I
H
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20 0 20 40 60 80 100 120 140
Fig 7:
Non repetitive surge peak on-state current
Tj(°C)
versus number of cycles.
IA)
TSM(
120
110
100
90
80
70
60
50
40
30
20
10
0
1 10 100 1000
Number of cycles
Tj initial=25°C
F=50Hz
Fig 6:
Relative variation of holding current versus
gate-cathode resistance (typical values).
I [R ] / I [R =1k ]
HGK H GK
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E+1 1E+2 1E+3 1E+4
Fig 8:
Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor responding value of I
I (A),I²t(A²s)
TSM
500
100
10
12 510
Ω
R ( )
GK
Ω
2
t.
I²t
tp(ms)
I
Tj=25°C
Tj initial=25°C
TSM
Fig 9:
On-state characteristics (maximum values).
I (A)
10.0
TM
Tj max.:
Vto=0.85V
Rt=31m
Tj=Tj max.
Ω
Tj=25°C
100.0
1.0
V (V)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
TM
4/5
Fig 10:
Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
100
80
60
40
20
S(Cu) (cm²)
0
0 2 4 6 8 101214161820
Page 5
PACKAGE ME CHANICAL D AT A
DPAK (P last ic)
TS1220-600B
DIMENSIONS
REF.
A 2.20 2.40 0.086 0. 094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212
C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.251 0.259
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.397
L2 0.80 0.031
L4 0.60 1.00 0.023 0.039
V2 0° 8° 0° 8°
Millimeters Inches
Min. Typ. Max Min. Typ. Max.
MARKING
FOOT PRINT DIMENSIONS
(in millimeters)
6.7
TYPE MARKING
TS1220-600B
TS
1220
6.7
6.7
3
1.61.6
2.32.3
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