Page 1
1
TPV8100BMOTOROLA RF DEVICE DATA
The RF Line
The TPV8100B is designed for output stages in band IV and V TV transmitter
amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
Including d ouble i nput and output matching networks, t he TPV8100B
features high impedances. It can easily operate in a full 470 MHz to 860 MHz
bandwidth in a single and simple circuit.
• To be used class AB for TV band IV and V.
• Specified 28 Volts, 860 MHz Characteristics
Output Power = 125 Watts (peak sync.)
Output Power = 100 Watts (CW)
Minimum Gain = 8.5 dB
• Specified 32 Volts, 860 MHz Characteristics
Output Power = 150 Watts (peak sync.)
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CER
40 Vdc
Collector–Base Voltage V
CBO
65 Vdc
Emitter–Base Voltage V
EBO
4 Vdc
Collector–Current — Continuous I
C
12 Adc
Total Device Dissipation @ 25°C Case
Derate above 25°C
P
D
215
1.25
Watts
W/°C
Operating Junction Temperature T
J
200 °C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (1) R
θJC
0.8 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, Rbe = 75 Ω)
V
(BR)CER
30 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc)
V
(BR)EBO
4 — — Vdc
Collector–Base Breakdown Voltage
(IE = 20 mAdc)
V
(BR)CBO
65 — — Vdc
Collector–Emitter Leakage
(VCE = 28 V, Rbe = 75 Ω)
I
CER
— — 10 mA
NOTE: (continued)
1. Thermal resistance is determined under specified RF operating condition.
Order this document
by TPV8100B/D
SEMICONDUCTOR TECHNICAL DATA
150 W, 470–860 MHz
NPN SILICON
RF POWER TRANSISTOR
CASE 398–03, STYLE 1
Motorola, Inc. 1994
REV 6
Page 2
Figure 1. Series Equivalent Input/Output Impedances
Input and Output impedances with circuit tuned for maximum linearity @ VCC = 28 V / ICQ = 2 x 50 mA / P
out
= 100 W
0.0
8
470
860665
f = 470 MHz
f = 860 MHz
ZOL*
665
Zo = 10
Ω
Z
in
TPV8100B
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 2 Adc, VCE = 10 Vdc)
h
FE
30 — 120 —
DYNAMIC CHARACTERISTICS
Output Capacitance (each side) (2)
(VCB = 28 V, IE = 0, f = 1 MHz)
C
ob
— 44 — pF
FUNCTIONAL TESTS IN CW (SOUND)
Common–Emitter Amplifier Power Gain
(VCC = 28 V, P
out
= 100 W, ICQ = 2 x 50 mA, f = 860 MHz)
G
p
8.5 9.5 — dB
Collector Efficiency
(VCC = 28 V, P
out
= 100 W, IQ = 2 x 50 mA, f = 860 MHz)
η 55 58 — %
Output Power @ 1 dB Compression (P
ref
= 25 W)
(VCC = 28 V, ICQ = 2 x 50 mA, f = 860 MHz)
P
out
100 110 — W
FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL)
Peak Output Power (synch.)
(VCC = 28 V, ICQ = 2 x 50 mA, f = 860 MHz)
P
out
125 135 — W
Peak Output Power (synch.)
(VCC = 32 V, ICQ = 2 x 25 mA, f = 860 MHz)
P
out
150 160 — W
Recommended Quiescent Current I
CQ
— — 2 x 0.3 A
NOTE:
2. Value of “Cob” is that of die only. It is not measurable in TPV8100B because of internal matching network.
f
(MHz)
Z
in
(Ohms)
ZOL*
(Ohms)
470 1.95 + j3.67 10.0 + j9.50
665 3.65 + j6.82 9.23 + j1.30
860 6.66 + j13.8 4.45 + j5.22
ZOL* = Conjugate of optimum load impedance into which
ZOL* = the device operates at a given output power,
ZOL* = voltage, current and frequency.
NOTE: Zin & ZOL* are given from base–to–base and
NOTE: collector–to–collector respectively.
Page 3
3
TPV8100BMOTOROLA RF DEVICE DATA
IN
50
Ω
C4
R1
R2
V
B
C1 C2 C3
+
L2
L1
C5 C6 C7
L3
L4
C9 C10 C11
+
OUT
50
Ω
C8
V
C
C1, C9 — Chip Capacitor 15 nF
C2, C10 — Chip Capacitor 100 nF
C3, C11 — Chip Capacitor 100 µF/40 V
C4 — Chip Capacitor 15 pF ATC 100A
C5 — Chip Capacitor 5.6 pF ATC 100A
C6 — Trimmer Capacitor 1–4 pF
C7 — Chip Capacitor 12 pF ATC 100B
C8 — Chip Capacitor 15 pF ATC 100A
C12 — Chip Capacitor 12 pF ATC 100A
L1, L3 — Coaxial Wire 25 Ω/85 Mils/40 mm
L2, L4 — Printed Board Inductance
R1, R2 — Chip Resistor 1 Ω 0805 5%
Figure 2. Test Circuit
10
9
8
900450
f, FREQUENCY (MHz)
, POWER GAIN (dB)
Figure 3. Power Gain versus Frequency
60
50
40
900450
f, FREQUENCY (MHz)
Figure 4. Collector Efficiency versus Frequency
, EFFICIENCY (%)
C12
D.U.T.
TYPICAL CHARACTERISTICS
CW — WIDEBAND
G
P
η
P
out
= 100 W
VCE = 28 V
ICQ = 2 x 50 mA
P
out
= 100 W
VCE = 28 V
ICQ = 2 x 50 mA
Page 4
TPV8100B
4
MOTOROLA RF DEVICE DATA
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
P
out
= 100 W P
out
= 130 W P
out
= 100 W P
out
= 130 W P
out
= 100 W P
out
= 110 W
ICQ = 2 x 50 mA ICQ = 2 x 150 mA ICQ = 2 x 300 mA
TEST CONDITIONS:
DIFF. Gain, 10 Steps
Channel 61
VCE = 28 V
100
0
40
150
100
50
20
161412108642
Pin, INPUT POWER (WATTS)
P
o
, OUTPUT POWER (WATTS)
150
100
50
20
161412108642
Pin, INPUT POWER (WATTS)
P
o
, OUTPUT POWER (WATTS)
TYPICAL VIDEO CHARACTERISTICS @ f = 800 MHz
VCE = 28 V
IRE
Black
VIDEO SIGNAL
TEST CONDITIONS:
STANDARD BLACK LEVEL
CHANNEL 61
ICQ = 2 x 50 mA
VCE = 28 V
TEST CONDITIONS:
STANDARD BLACK LEVEL
CHANNEL 61
ICQ = 2 x 300 mA
VCE = 28 V
100
0
40
IRE
VIDEO SIGNAL
% %
Figure 5. Peak Output Power versus Peak
Input Power
Figure 6. Peak Output Power versus Peak
Input Power
Figure 7. Gain versus Output Power
Page 5
5
TPV8100BMOTOROLA RF DEVICE DATA
P
out
= 100 W P
out
= 130 W P
out
= 150 W
TEST CONDITIONS:
DIFF. Gain, 10 Steps
Channel 61
VCE = 32 V
ICQ = 2 x 25 mA
100
0
40
VCE = 32 V, ICQ = 2 x 25 mA
P
out
Gain
25 W
50 W
100 W
120 W
130 W
140 W
150 W
160 W
10.6 dB
11.1 dB
11.3 dB
11.1 dB
11.0 dB
10.7 dB
10.5 dB
10.2 dB
150
100
50
20
161412108642
Pin, INPUT POWER (WATTS)
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
P
o
, OUTPUT POWER (WATTS)
(see curve on left)
TYPICAL VIDEO CHARACTERISTICS @ f = 800 MHz
VCE = 32 V
IRE
Black
VIDEO SIGNAL
TEST CONDITIONS:
STANDARD BLACK LEVEL
CHANNEL 61
ICQ = 2 x 25 mA
VCE = 32 V
% %
100
0
40
IRE
VIDEO SIGNAL
Figure 8. Peak Output Power versus Peak
Input Power
Figure 9. Differential Gain
Page 6
TPV8100B
6
MOTOROLA RF DEVICE DATA
Figure 10. Components View
C4
R1
R2
C1 C2
C5 C6 C7
C9 C10
C3 C11
C8
Vb Vc
PACKAGE DIMENSIONS
CASE 398–03
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. BASE
5. EMITTER
–A–
U
K
N
G
D
E
J
H
C
1 2
3 4
SEATING
PLANE
Q
–B–
–T–
M
A
M
0.025 (0.010) B
M
T
5
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.094 1.110 27.79 28.19
B 0.457 0.465 11.61 11.81
C 0.165 0.182 4.25 4.62
D 0.121 0.131 3.08 3.32
E 0.055 0.065 1.40 1.65
G 0.177 0.185 4.50 4.69
H 0.081 0.091 2.06 2.31
J 0.002 0.004 0.06 0.10
K 0.142 0.163 3.60 4.14
N 0.510 0.520 12.95 13.21
Q 0.125 0.135 3.18 3.42
U 0.844 BSC 21.44 BSC
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
TPV8100B/D
*TPV8100B/D*
◊
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