Datasheet TPS51125A Datasheet (Texas Instruments)

Page 1
TPS51125A
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SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
Dual-Synchronous, Step-Down Controller with Out-of-Audio™ Operation
and 100-mA LDOs for Notebook System Power
Check for Samples: TPS51125A
1

FEATURES

2
Wide Input Voltage Range: 5.5 V to 28 V
Output Voltage Range: 2 V to 5.5 V I/O Supplies
Built-in 100-mA 5-V/3.3-V LDO with Switches System Power Supplies
Built-in 1% 2-V Reference Output
With/Without Out-of-Audio™ Mode Selectable Light Load and PWM only Operation
Internal 1.6-ms Voltage Servo Softstart
Adaptive On-Time Control Architecture with Four Selectable Frequency Setting
4500 ppm/°C R
Built-In Output Discharge
Power Good Output
Built-in OVP/UVP/OCP
Thermal Shutdown (Non-latch)
QFN24 (RGE)
Current Sensing
DS(on)
Notebook Computers

DESCRIPTION

The TPS51125A is a cost effective, dual-synchronous buck controller targeted for notebook system power supply solutions. It provides 5-V and 3.3-V LDOs and requires few external components. The 270-kHz VCLK output can be used to drive an external charge pump, generating gate drive voltage for the load switches without reducing the main converter’s efficiency. The TPS51125A supports high efficiency, fast transient response and provides a combined power-good signal. Out-of-Audio™ mode light-load operation enables low acoustic noise at much higher efficiency than conventional forced PWM operation. Adaptive on-time D-CAP™ control provides convenient and efficient operation. The part operates with supply input voltages ranging from 5.5 V to 28 V and supports output voltages from 2 V to 5.5 V. The TPS51125A is available in a 24-pin QFN package and is specified from -40°C to 85°C ambient temperature range.
Table 1. Differences between the TPS51125 and TPS51125A
LDO Output Capacitance Requirement
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2Out-of-Audio, D-CAP are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
(1 µF acceptable at no load) (1 µF acceptable at no load)
TPS51125 TPS51125A
VREG5: at least 33 µF VREG5: 10 µF or larger (X5R or X7R) VREG3: at most 10 µF VREG3: 10 µF or larger (X5R or X7R)
VREF: 0.22 µF to 1 µF VREF: 0.22 µF to 1 µF (X5R or X7R)
Copyright © 2009–2012, Texas Instruments Incorporated
Page 2
TPS51125A
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
ORDERING INFORMATION
T
A
-40°C to 85°C 24
PACKAGE DEVICE NUMBER PINS OUTPUT SUPPLY ECO PLAN
Plastic Quad Flat Green (RoHS and no
Pack (QFN) Sb/Br)
TPS51125ARGET 250
TPS51125ARGER 3000
(1)(2)
MINIMUM
QUANTITY
Tape and reel
(small)
Tape and reel
(large)
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(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the TI
website at www.ti.com.
(2) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package

ABSOLUTE MAXIMUM RATINGS

(1)
over operating free-air temperature range (unless otherwise noted)
PARAMETER UNIT
VBST1, VBST2 –0.3 36 VIN –0.3 30 LL1, LL2 -2.0 30
Input voltage range
(1)
LL1, LL2, pulse width < 20 ns -5.0 30 VBST1, VBST2
(2)
EN0, ENTRIP1, ENTRIP2, VFB1, VFB2, VO1, VO2, TONSEL, SKIPSEL –0.3 6 DRVH1, DRVH2 -1.0 36
Output voltage range
(1)
DRVH1, DRVH2
(2)
PGOOD, VCLK, VREG3, VREG5, VREF, DRVL1, DRVL2 –0.3 6
Electrostatic discharge kV
T
J
T
stg
Human body model (HBM) QSS 009-105 (JESD22-A114A) 2 Charged device model (CDM) QSS 009-147 (JESD22-C101B.01) 1.5 Junction temperature range –40 125 Storage temperature –55 150
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltage values are with respect to the corresponding LLx terminal.
VALUE
MIN MAX
–0.3 6 V
–0.3 6
°C

DISSIPATION RATINGS

2-oz. trace and copper pad with solder.
PACKAGE TA< 25°C POWER RATING TA= 85°C POWER RATING
24 pin RGE
(1)
1.85 W 18.5 mW/°C 0.74 W
DERATING FACTOR ABOVE T
= 25°C
(1) Enhanced thermal conductance by 3x3 thermal vias beneath thermal pad.
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TPS51125A
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SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012

RECOMMENDED OPERATING CONDITIONS

over operating free-air temperature range (unless otherwise noted)
PARAMETER MIN TYP MAX UNIT
Supply voltage VIN 5.5 28
VBST1, VBST2 -0.1 34
Input voltage range
Output voltage range LL1, LL2 -1.8 28
T
A
VBST1, VBST2 (wrt LLx) -0.1 5.5 EN0, ENTRIP1, ENTRIP2, VFB1, VFB2, VO1, VO2,
TONSEL, SKIPSEL DRVH1, DRVH2 -0.8 34 DRVH1, DRVH2 (wrt LLx) -0.1 5.5
VREF, VREG3, VREG5 -0.1 5.5 PGOOD, VCLK, DRVL1, DRVL2 -0.1 5.5 Operating free-air temperature -40 85 °C
-0.1 5.5 V
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SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012

ELECTRICAL CHARACTERISTICS

over operating free-air temperature range, VIN = 12 V (unless otherwise noted)
PARAMETER CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
I
VIN1
I
VIN2
I
VO1
I
VO2
I
VINSTBY
I
VINSDN
VIN supply current1 = 0 V, EN0=open, ENTRIPx = 5 V, 0.55 1 mA
VIN supply current2 3.3 V, EN0=open, ENTRIPx = 5 V, 4 6.5 μA
VO1 current = 3.3 V, EN0=open, ENTRIPx = 5 V, 0.8 1.5 mA
VO2 current = 3.3 V, EN0=open, ENTRIPx = 5 V, 12 100
VIN standby current 95 150
VIN shutdown current 10 25
VREF OUTPUT
V
VREF
VREF output voltage V
VREG5 OUTPUT
V
VREG5
I
VREG5
V
TH5VSW
R
5VSW
VREG5 output voltage VO1 = 0 V, I
VREG5 output current VO1 = 0 V, VREG5 = 4.5 V 100 175 250 mA
Switch over threshold V
5 V SW R
ON
VREG3 OUTPUT
V
VREG3
I
VREG3
V
TH3VSW
R
3VSW
VREG3 output voltage VO2 = 0 V, I
VREG3 output current VO2 = 0 V, VREG3 = 3 V 100 175 250 mA
Switch over threshold V
3 V SW R
ON
INTERNAL REFERENCE VOLTAGE
V
V
I
IREF
VFB
VFB
Internal reference voltage I
VFB regulation voltage FB voltage, I
VFB input current VFBx = 2.0 V, TA= 25°C -20 20 nA
(1) Ensured by design. Not production tested.
VIN current, TA= 25°C, no load, VO1 = 0 V, VO2 VFB1 = VFB2 = 2.05 V
VIN current, TA= 25°C, no load, VO1 = 5 V, VO2 = VFB1 = VFB2 = 2.05 V
VO1 current, TA= 25°C, no load, VO1 = 5 V, VO2 VFB1 = VFB2 = 2.05 V
VO2 current, TA= 25°C, no load, VO1 = 5 V, VO2 VFB1 = VFB2 = 2.05 V
VIN current, TA= 25°C, no load, μA EN0 = 1.2 V, ENTRIPx = 0 V
VIN current, TA= 25°C, no load, EN0 = ENTRIPx = 0 V
I
= 0 A 1.98 2.00 2.02
VREF
-5 μA < I
VO1 = 0 V, I
VO1 = 0 V, I
< 100 μA 1.97 2.00 2.03
VREF
< 100 mA, TA= 25°C 4.8 5 5.2
VREG5
< 100 mA, 6.5 V < VIN < 28 V 4.75 5 5.25 V
VREG5
< 50 mA, 5.5 V < VIN < 28 V 4. 75 5 5.25
VREG5
Turns on 4.55 4.7 4.85 Hysteresis 0.15 0.25 0.3 VO1 = 5 V, I
VO2 = 0 V, I
VO2 = 0 V, I
= 100 mA 1 3
VREG5
< 100 mA, TA= 25°C 3.2 3.33 3.46
VREG3
< 100 mA, 6.5 V < VIN < 28 V 3.13 3.33 3.5 V
VREG3
< 50 mA, 5.5 V < VIN < 28 V 3.13 3.33 3.5
VREG3
Turns on 3.05 3.15 3.25 Hysteresis 0.1 0.2 0.25 VO2 = 3.3 V, I
= 0 A, beginning of ON state 1.95 1.98 2.01
VREF
FB voltage, I
FB voltage, I
= 100 mA 1.5 4
VREG3
= 0 A, skip mode 1.98 2.01 2.04
VREF
= 0 A, OOA mode
VREF
= 0 A, continuous conduction
VREF
(1)
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2.00 2.035 2.07
(1)
2.00
V
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SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range, VIN = 12 V (unless otherwise noted)
PARAMETER CONDITIONS MIN TYP MAX UNIT
V
DISCHARGE
OUT
I
Dischg
OUTPUT DRIVERS
R
DRVH
R
DRVL
t
D
CLOCK OUTPUT
V
CLKH
V
CLKL
f
CLK
INTERNAL BST DIODE
V
FBST
I
VBSTLK
DUTY AND FREQUENCY CONTROL
t
ON11
t
ON12
t
ON13
t
ON14
t
ON21
t
ON22
t
ON23
t
ON24
t
ON(min)
t
OFF(min)
SOFT-START
t
SS
POWERGOOD
V
THPG
I
PGMAX
t
PGDEL
VOUT discharge current ENTRIPx = 0 V, VOx = 0.5 V 10 60 mA
DRVH resistance
DRVL resistance
Dead time ns
High level voltage I Low level voltage I
Source, V Sink, V Source, V Sink, V DRVHx-off to DRVLx-on 10 DRVLx-off to DRVHx-on 30
VCLK VCLK
BSTx - DRVHx
DRVHx - LLx
VREG5 - DRVLx
= 100 mV 1.5 4
DRVLx
= -10 mA, VO1 = 5 V, TA= 25 °C 4.84 4.92 = 10 mA, VO1 = 5 V, TA= 25 °C 0.06 0.12
= 100 mV 4 8
= 100 mV 1.5 4
= 100 mV 4 8
Clock frequency TA= 25 °C 175 270 325 kHz
Forward voltage V
VREG5-VBSTx
, IF= 10 mA, TA= 25 °C 0.7 0.8 0.9 V
VBST leakage current VBSTx = 34 V, LLx = 28 V, TA= 25 °C 0.1 1 μA
CH1 on time 1 VIN= 12 V, VO1 = 5 V, 200 kHz setting 2080 CH1 on time 2 VIN= 12 V, VO1 = 5 V, 245 kHz setting 1700 CH1 on time 3 VIN= 12 V, VO1 = 5 V, 300 kHz setting 1390 CH1 on time 4 VIN= 12 V, VO1 = 5 V, 365 kHz setting 1140 CH2 on time 1 VIN= 12 V, VO2 = 3.3 V, 250 kHz setting 1100 CH2 on time 2 VIN= 12 V, VO2 = 3.3 V, 305 kHz setting 900 CH2 on time 3 VIN= 12 V, VO2 = 3.3 V, 375 kHz setting 730 CH2 on time 4 VIN= 12 V, VO2 = 3.3 V, 460 kHz setting 600 Minimum on time TA= 25 °C 80 Minimum off time TA= 25 °C 300
Internal SS time Internal soft start 1.1 1.6 2.1 ms
PG in from lower 92.50% 95% 97.50%
PG threshold PG in from higher 105%
PG hysteresis 2.50% 5% 7.50% PG sink current PGOOD = 0.5 V 5 12 mA PG delay Delay for PG in 350 510 670 μs
V
ns
102.50 107.50 % %
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TPS51125A
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range, VIN = 12 V (unless otherwise noted)
PARAMETER CONDITIONS MIN TYP MAX UNIT
LOGIC THRESHOLD AND SETTING CONDITIONS
Shutdown 0.4
V
EN0
I
EN0
V
EN
V
TONSEL
V
SKIPSEL
PROTECTION: CURRENT SENSE
I
ENTRIP
TC
IENTRIP
V
OCLoff
V
OCL(max)
V
ZC
V
ENTRIP
PROTECTION: UVP AND OVP
V
OVP
T
OVPDEL
V
UVP
t
UVPDEL
t
UVPEN
UVLO
V
UVVREG5
V
UVVREG3
THERMAL SHUTDOWN
T
SDN
(2) Ensured by design. Not production tested.
EN0 setting voltage Enable, VCLK = off 0.8 1.6 V
Enable, VCLK = on 2.4 V
= 0.2 V 2 3.5 5
EN0 current μA
ENTRIP1, ENTRIP2 threshold
EN0
V
= 1.5 V 1 1.75 2.5
EN0
Shutdown 350 400 450 Hysteresis 10 30 60 200 kHz/250 kHz 1.5
TONSEL setting voltage
245 kHz/305 kHz 1.9 2.1 300 kHz/375 kHz 2.7 3.6 365 kHz/460 kHz 4.7 V PWM only 1.5
SKIPSEL setting voltage Auto skip 1.9 2.1
OOA auto skip 2.7
ENTRIPx source current V ENTRIPx current temperature
coefficient OCP comparator offset -8 0 8
On the basis of 25°C ((V
V Maximum OCL setting V Zero cross detection
comparator offset
V Current limit threshold V
= 920 mV, TA= 25°C 9.4 10 10.6 μA
ENTRIPx
(2)
ENTRIPx-GND
ENTRIPx-GND ENTRIPx
GND-LLx
ENTRIPx-GND
/9)-24 mV -V
= 920 mV
= 5 V 185 205 225 mV voltage -5 0 5
voltage,
(2)
GND-LLx
) voltage,
OVP trip threshold OVP detect 110% 115% 120% OVP prop delay 2 μs
Output UVP trip threshold
UVP detect 55% 60% 65%
Hysteresis 10% Output UVP prop delay 20 32 40 μs Output UVP enable delay 1.4 2 2.6 ms
VREG5 UVLO threshold
VREG3 UVLO threshold Shutdown
Thermal shutdown threshold °C
Wake up 4.1 4.2 4.3
Hysteresis 0.38 0.43 0.48 V
(2)
Shutdown temperature
Hysteresis
(2)
(2)
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mV
4500 ppm/°C
0.515 2 V
VO2-1
150
10
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SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012

DEVICE INFORMATION

Table 2. TERMINAL FUNCTIONS TABLE
TERMINAL
NAME NO.
VIN 16 I High voltage power supply input for 5-V/3.3-V LDO. GND 15 - Ground.
VREG3 8 O
VREG5 17 O
VREF 3 O
EN0 13 I/O
ENTRIP1 1 Channel 1 and Channel 2 enable and OCL trip setting pins.Connect resistor from this pin to GND to ENTRIP2 6 VO1 24 Output connection to SMPS. These terminals work as fixed voltage inputs and output discharge VO2 7 VFB1 2 SMPS feedback inputs. Connect with feedback resistor divider. VFB2 5 PGOOD 23 O Power Good window comparator output for channel 1 and 2. (Logical AND)
SKIPSEL 14 I
TONSEL 4 I 300 kHz/375 kHz setting : connect to VREG3
DRVL1 19 Low-side N-channel MOSFET driver outputs. GND referenced drivers. DRVL2 12 VBST1 22 Supply input for high-side N-channel MOSFET driver (boost terminal). VBST2 9 DRVH1 21 High-side N-channel MOSFET driver outputs. LL referenced drivers. DRVH2 10 LL1 20 Switch node connections for high-side drivers, current limit and control circuitry. LL2 11 VCLK 18 O 270-kHz clock output for 15-V charge pump.
I/O DESCRIPTION
3.3-V power supply output. Connect 10-μF or larger, high-quality X5R or X7R ceramic capacitor to Power GND near the device. A 1-μF ceramic capacitor is acceptable when not loaded.
5-V power supply output. Connect 10-μF or larger, high-quality X5R or X7R ceramic capacitor to Power GND near the device.
2-V reference voltage output. Connect 220-nF to 1-μF, high-quality X5R or X7R ceramic capacitor to Signal GND near the device.
Master enable input. Open : LDOs on, and ready to turn on VCLK and switcher channels. 620 kto GND : enable both LDOs, VCLK off and ready to turn on switcher channels. Power
consumption is almost the same as the case of VCLK = ON. GND : disable all circuit
I/O
I/O
set threshold for synchronous R
inputs. VO1 and VO2 also work as 5 V and 3.3 V switch over return power input respectively.
I
Selection pin for operation mode: OOA auto skip : Connect to VREG3 or VREG5 Auto skip : Connect to VREF PWM only : Connect to GND On-time adjustment pin. 365 kHz/460 kHz setting : connect to VREG5
245 kHz/305 kHz setting : connect to VREF 200 kHz/250 kHz setting : connect to GND
O
I
O
I
sense. Short to ground to shutdown a switcher channel.
DS(on)
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7
8
9
10
24
23
22
21
VO1
PGOOD
VBST1
DRVH1
VO2
VREG3
VBST2
DRVH2
TPS51125ARGE
11
12
20
19
LL1
DRVL1
LL2
DRVL2
13 14 15 16 17 18
EN0
SKIPSEL
GND
VIN
VREG5
VCLK
6 5 4 3 2 1
ENTRIP2
VFB2
TONSEL
VREF
VFB1
ENTRIP1
PowerPAD
220 nF
20 kW 20 kW 30 kW
100 kW
VREG5
10 mF
5.1 W
0.1 mF
130 kW130 kW
3.3 mF
330 mF
VO1
5 V
VIN
VREG5
VIN
10 mF x 2
VIN
5.5 V to
28 V
EN0
5.1 W
0.1 mF
3.3 mF
330 mF
VO2
3.3 V
10 mF x 2
10 mF
13 kW
VIN
100 nF 1 mF
15 V
100 nF
100 nF
100 nF
620 kW
VO1VREF
TPS51125ARGE
VO1
PGOOD
VO2
VREG3
VBST1
DRVL1
LL1
DRVH1
VBST2
DRVH2
LL2
DRVL2
EN0
ENTRIP2
VFB2
VREF
TONSEL
VFB1
ENTRIP1
SKIPSEL
GND
VIN
VCLK
VREG5
2
3
4
5
6
7 8
9 10
11
1
12
13
14
15
16
17
18
24 23
22 21
20 19
TPS51125A
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
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QFN PACKAGE
24 PINS
(TOP VIEW)
Typical Application Diagram
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SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
Functional Block Diagram
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TPS51125A
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
Switcher Controller Block
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VIN SUPPLY CURRENT2
vs
JUNCTION TEMPERATURE
0
1
2
3
4
5
6
7
8
9
-50 0 50 100 150
TJ- Junction Temperature - °C
I
VIN2
- VIN Supply Current2 - mA
VIN SUPPLY CURRENT2
vs
INPUT VOLTAGE
0
1
2
3
4
5
6
7
8
9
5 10 15 20 25
VIN- Input Voltage - V
I
VIN2
- VIN Supply Current2 - mA
VIN SUPPLY CURRENT1
vs
INPUT VOLTAGE
0
100
200
300
400
500
600
700
800
5 10 15 20 25
VIN- Input Voltage - V
I
VIN1
- VIN Supply Current1 - mA
VIN SUPPLY CURRENT1
vs
JUNCTION TEMPERATURE
0
100
200
300
400
500
600
700
800
-50 0 50 100 150
TJ- Junction Temperature - °C
I
VIN1
- VIN Supply Current1 - m A
TPS51125A
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TYPICAL CHARACTERISTICS

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Figure 1. Figure 2.
Figure 3. Figure 4.
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VIN SHUTDOWN CURRENT
vs
INPUT VOLTAGE
0
5
10
15
20
25
5 10 15 20 25
VIN- Input Voltage - V
I
VINSDN
- VIN Shutdown Current - mA
VIN SHUTDOWN CURRENT
vs
JUNCTION TEMPERATURE
0
5
10
15
20
25
-50 0 50 100 150
TJ- Junction Temperature - °C
I
VINS DN
- VIN Shutdown Current - mA
VIN STANDBY CURRENT
vs
JUNCTION TEMPERATURE
0
50
100
150
200
250
-
50
0 50 100 150
TJ- Junction Temperature - °C
I
VINST BY
- VIN Standby Cu rrent - mA
VINSTANDBY CURRENT
vs
INPUTVOLTAGE
0
50
100
150
200
250
5 10 15 20 25
VIN-InputVoltage-V
I – VINStandbyCurrent – A
VINSTBY
m
TPS51125A
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
TYPICAL CHARACTERISTICS (continued)
Figure 5. Figure 6.
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Figure 7. Figure 8.
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SWITCHINGFREQUENCY
vs
INPUTVOLTAGE
0
100
200
300
400
500
6 8 10 12 14 16 18 20 22 24 26
VIN-InputVoltage-V
f
SW
- Swithching Frequency - kHz
TONSEL =GND
CH1
CH2
SWITCHINGFREQUENCY
vs
INPUTVOLTAGE
0
100
200
300
400
500
6 8 10 12 14 16 18 20 22 24 26
VIN-InputVoltage-V
f
SW
- Swithching Frequency - kHz
TONSEL =2V
CH1
CH2
CURRENT SENSE CURRENT
vs
JUNCTION TEMPERATURE
6
7
8
9
10
11
12
13
14
-50 0 50 100 150
TJ- Junction Temperature - °C
I
ENT RIP
- Current Sense Cu rrent - mA
VCLK FREQUENCY
vs
JUNCTION TEMPERATURE
175
200
225
250
275
300
325
-50 0 50 100 150
TJ- Junction Temperature - °C
f
CL K
- VCLK Frequency - kHz
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SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
TYPICAL CHARACTERISTICS (continued)
Figure 9. Figure 10.
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Figure 11. Figure 12.
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SWITCHINGFREQUENCY
vs
OUTPUTCURRENT
0
100
200
300
400
500
0.001 0.01 0.1 1 10
I
OUT
-OutputCurrent- A
f
SW
- Swithching Frequency - kHz
TONSEL =2V
CH2 Auto-skip
CH2OOA
CH2PWMOnly
CH1PWMOnly
CH1 Auto-skip
CH1OOA
SWITCHINGFREQUENCY
vs
OUTPUTCURRENT
0
100
200
300
400
500
0.001 0.01 0.1 1 10
I
OUT
-OutputCurrent- A
f
SW
- Swithching Frequency - kHz
TONSEL =GND
CH2 Auto-skip
CH2OOA
CH2PWMOnly
CH1PWMOnly
CH1 Auto-skip
CH1OOA
SWITCHINGFREQUENCY
vs
INPUTVOLTAGE
0
100
200
300
400
500
6 8 10 12 14 16 18 20 22 24 26
VIN-InputVoltage-V
f
SW
- Swithching Frequency - kHz
TONSEL =3.3V
CH1
CH2
SWITCHINGFREQUENCY
vs
INPUTVOLTAGE
0
100
200
300
400
500
6 8 10 12 14 16 18 20 22 24 26
VIN-InputVoltage-V
f
SW
- Swithching Frequency - kHz
TONSEL =5V
CH1
CH2
TPS51125A
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
TYPICAL CHARACTERISTICS (continued)
Figure 13. Figure 14.
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14 Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated
Figure 15. Figure 16.
Product Folder Links: TPS51125A
Page 15
VREG5 OUTPUT VOLTAGE
vs
OUTPUT CURRENT
4.90
4.95
5.00
5.05
0 20 40 60 80 100
I
VREG5
- VREG5 Output Curr ent - m A
V
VREG5
- VREG5 Outp ut Voltage - V
OVP/UVP THRESHOLD VOLTAGE
vs
JUNCTION TEMPERATURE
40
50
60
70
80
90
100
110
120
130
140
150
-50 0 50 100 150
TJ- Junction Temperature - °C
V
OVP/VUV P
- OVP/UVP Threshold - %
SWITCHINGFREQUENCY
vs
OUTPUTCURRENT
0
100
200
300
400
500
0.001 0.01 0.1 1 10
I
OUT
-OutputCurrent- A
f
SW
- Swithching Frequency - kHz
TONSEL =5V
CH2 Auto-skip
CH2OOA
CH2PWMOnly
CH1PWMOnly
CH1 Auto-skip
CH1OOA
SWITCHINGFREQUENCY
vs
OUTPUTCURRENT
0
100
200
300
400
500
0.001 0.01 0.1 1 10
I
OUT
-OutputCurrent- A
f
SW
- Swithching Frequency - kHz
TONSEL =3.3V
CH2 Auto-skip
CH2OOA
CH2PWMOnly
CH1PWMOnly
CH1 Auto-skip
CH1OOA
TPS51125A
www.ti.com
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
TYPICAL CHARACTERISTICS (continued)
Figure 17. Figure 18.
Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback 15
Figure 19. Figure 20.
Product Folder Links: TPS51125A
Page 16
3.3-VOUTPUTVOLTAGE vs
OUTPUTCURRENT
3.240
3.270
3.300
3.330
3.360
0.001 0.01 0.1 1 10
I
OUT2
-3.3-VOutputCurrent- A
V
OUT2
- 3.3-V Outp ut Voltage - V
PWMOnly
Auto-skip
OOA
5-VOUTPUTVOLTAGE
vs
OUTPUTCURRENT
4.950
4.975
5.000
5.025
5.050
5.075
0.001 0.01 0.1 1 10
I
OUT1
-5-VOutputCurrent- A
V
OUT1
- 5-V Out put Voltag e - V
PWMOnly
Auto-skip
OOA
VREG3 OUTPUT VOLTAGE
vs
OUTPUT CURRENT
3.2
3.25
3.3
3.35
0 20 40 60 80 100
I
VREG3
- VREG3 Output Curr ent - m A
VVR EG3 - VREG3 Output Voltage - V
VREF OUTPUT VOLTAGE
vs
OUTPUT CURRENT
1.980
1.985
1.990
1.995
2.000
2.005
2.010
2.015
2.020
0 20 40 60 80 100
I
VREF
- VREF Output Current - mA
V
VREF
- VREF Output Voltage - V
TPS51125A
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
TYPICAL CHARACTERISTICS (continued)
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16 Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated
Figure 21. Figure 22.
Figure 23. Figure 24.
Product Folder Links: TPS51125A
Page 17
5-V EFFICIENCY
vs
OUTPUT CURRENT
0
20
40
60
80
100
0.001 0.01 0.1 1 10
I
OUT1
- 5-V Output Current - A
h - Efficiency - %
Auto-skip
PWM Only
OOA
VIN=8V
VIN=12V
VIN=20V
3.3-V EFFICIENCY vs
OUTPUT CURRENT
0
20
40
60
80
100
0.001 0.01 0.1 1 10
I
OUT2
- 3.3-V Output Current - A
h - Efficiency - %
Auto-skip
PWM Only
OOA
5-V Switcher ON
VIN=8V
VIN=12V
VIN=20V
3.3-VOUTPUTVOLTAGE vs
INPUTVOLTAGE
3.240
3.270
3.300
3.330
3.360
6 8 10 12 14 16 18 20 22 24 26
VIN-InputVoltage-V
V
OUT2
- 3.3-V Outp ut Voltage - V
IO=0A
IO=6A
5-VOUTPUTVOLTAGE
vs
INPUTVOLTAGE
4.950
4.975
5.000
5.025
5.050
5.075
6 8 10 12 14 16 18 20 22 24 26
VIN-InputVoltage-V
V
OUT1
- 5-V Out put Voltag e - V
IO=0A
IO=6A
TPS51125A
www.ti.com
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
TYPICAL CHARACTERISTICS (continued)
Figure 25. Figure 26.
Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback 17
Figure 27. Figure 28.
Product Folder Links: TPS51125A
Page 18
ENTRIP1 (2V/div)
V
OUT1
(2V/div)
PGOOD (5V/div)
ENTRIP2 (2V/div)
V
OUT2
(2V/div)
PGOOD (5V/div)
V
OUT1
(100mV/div)
I
IND
(5A/div)
I
OUT1
(5A/div)
V
OUT2
(100mV/div)
I
IND
(5A/div)
I
OUT2
(5A/div)
TPS51125A
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
TYPICAL CHARACTERISTICS (continued)
5-V Load Transient Response 3.3-V Load Transient Response
Figure 29. Figure 30.
5-V Startup Waveforms 3.3-V Startup Waveforms
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Figure 31. Figure 32.
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ENTRIP1 (5V/div)
V
OUT1
(2V/div)
PGOOD (5V/div)
DRVL1 (5V/div)
ENTRIP2 (5V/div)
V
OUT2
(2V/div)
PGOOD (5V/div)
DRVL2 (5V/div)
V
OUT1
(200mV/div)
VREG5 (200mV/div)
V
OUT2
(200mV/div)
VREG3 (200mV/div)
TPS51125A
www.ti.com
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
TYPICAL CHARACTERISTICS (continued)
5-V Switchover Waveforms 3.3-V Switchover Waveforms
Figure 33. Figure 34.
5-V Soft-stop Waveforms 3.3-V Soft-stop Waveforms
Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback 19
Figure 35. Figure 36.
Product Folder Links: TPS51125A
Page 20
TPS51125A
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
www.ti.com

APPLICATION INFORMATION

PWM Operations

The main control loop of the switch mode power supply (SMPS) is designed as an adaptive on-time pulse width modulation (PWM) controller. It supports a proprietary D-CAP™ mode. D-CAP™ mode does not require external compensation circuit and is suitable for low external component count configuration when used with appropriate amount of ESR at the output capacitor(s).
At the beginning of each cycle, the synchronous top MOSFET is turned on, or becomes ‘ON’ state. This MOSFET is turned off, or becomes ‘OFF’ state, after internal one shot timer expires. This one shot is determined by VINand V
to keep frequency fairly constant over input voltage range, hence it is called adaptive on-time
OUT
control. The MOSFET is turned on again when the feedback point voltage, VFB, decreased to match with internal 2-V reference. The inductor current information is also monitored and should be below the over current threshold to initiate this new cycle. Repeating operation in this manner, the controller regulates the output voltage. The synchronous bottom or the “rectifying” MOSFET is turned on at the beginning of each ‘OFF’ state to keep the conduction loss minimum.The rectifying MOSFET is turned off before the top MOSFET turns on at next switching cycle or when inductor current information detects zero level. In the auto-skip mode or the OOA skip mode, this enables seamless transition to the reduced frequency operation at light load condition so that high efficiency is kept over broad range of load current.

Adaptive On-Time Control and PWM Frequency

TPS51125A does not have a dedicated oscillator on board. However, the part runs with pseudo-constant frequency by feed-forwarding the input and output voltage into the on-time, one-shot timer. The on-time is controlled inverse proportional to the input voltage and proportional to the output voltage so that the duty ratio will be kept as VOUT/VIN technically with the same cycle time. The frequencies are set by TONSEL terminal connection as Table 3.
TONSEL CONNECTION
GND 200 kHz 250 kHz
VREF 245 kHz 305 kHz VREG3 300 kHz 375 kHz VREG5 365 kHz 460 kHz
Table 3. TONSEL Connection and Switching Frequency
SWITCHING FREQUENCY
CH1 CH2
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Page 21
f
SW
0
O
1
f
2 ESR C 4
= £
p ´ ´
ESR
R1
Co
+
2V
+
Lx
R2
Control
logic
&
Driver
RL
VIN
VFB
DRVH
DRVL
PWM
Switching ModulatorVoltage Divider
IoIc
I
L
Vc
Output Capacitor
TPS51125A
www.ti.com
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012

Loop Compensation

From small-signal loop analysis, a buck converter using D-CAPTMmode can be simplified as below.
Figure 37. Simplifying the Modulator
The output voltage is compared with internal reference voltage after divider resistors, R1 and R2. The PWM comparator determines the timing to turn on high-side MOSFET. The gain and speed of the comparator is high enough to keep the voltage at the beginning of each on cycle substantially constant. For the loop stability, the 0dB frequency, f0, defined below need to be lower than 1/4 of the switching frequency.
As f0is determined solely by the output capacitor's characteristics, loop stability of D-CAPTMmode is determined by the capacitor's chemistry. For example, specialty polymer capacitors (SP-CAP) have Co in the order of several 100 μF and ESR in range of 10 m. These will make f0in the order of 100 kHz or less and the loop will be stable. However, ceramic capacitors have f0at more than 700 kHz, which is not suitable for this operational mode.

Ramp Signal

The TPS51125A adds a ramp signal to the 2-V reference in order to improve its jitter performance. As described in the previous section, the feedback voltage is compared with the reference information to keep the output voltage in regulation. By adding a small ramp signal to the reference, the S/N ratio at the onset of a new switching cycle is improved. Therefore the operation becomes less jitter and stable. The ramp signal is controlled to start with -20mV at the beginning of ON-cycle and to become 0 mV at the end of OFF-cycle in steady state. By using this scheme, the TPS51125A improve jitter performance without sacrificing the reference accuracy.
(1)
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( )
f
IN OUT OUT
OUT(LL)
IN
1
I
2 L
V V V
V
´
´ ´
- ´
=
TPS51125A
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
www.ti.com

Light Load Condition in Auto-Skip Operation

The TPS51125A automatically reduces switching frequency at light load conditions to maintain high efficiency. This reduction of frequency is achieved smoothly and without increase of V described as follows. As the output current decreases from heavy load condition, the inductor current is also reduced and eventually comes to the point that its ‘valley’ touches zero current, which is the boundary between continuous conduction and discontinuous conduction modes. The rectifying MOSFET is turned off when this zero inductor current is detected. As the load current further decreased, the converter runs in discontinuous conduction mode and it takes longer and longer to discharge the output capacitor to the level that requires next ‘ON’ cycle. The ON time is kept the same as that in the heavy load condition. In reverse, when the output current increase from light load to heavy load, switching frequency increases to the preset value as the inductor current reaches to the continuous conduction. The transition load point to the light load operation I threshold between continuous and discontinuous conduction mode) can be calculated as follows;
where f is the PWM switching frequency. Switching frequency versus output current in the light load condition is a function of L, VINand V
decreases almost proportional to the output current from the I at I
/5 if the frequency setting is 300 kHz.
OUT(LL)
OUT(LL)
given above. For example, it will be 60 kHz
ripple. Detail operation is
OUT
OUT(LL)
(i.e. the
, but it
OUT
(2)
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TPS51125A
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SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012

Out-of-Audio™ Light-Load Operation

Out-of-Audio™ (OOA) light-load mode is a unique control feature that keeps the switching frequency above acoustic audible frequencies toward virtually no load condition while maintaining best of the art high conversion efficiency. When the Out-of-Audio™ operation is selected, OOA control circuit monitors the states of both MOSFET and force to change into the ‘ON’ state if both of MOSFETs are off for more than 32 μs. This means that the top MOSFET is turned on even if the output voltage is higher than the target value so that the output capacitor is tends to be overcharged.
The OOA control circuit detects the over-voltage condition and begins to modulate the on time to keep the output voltage regulated. As a result, the output voltage becomes 0.5% higher than normal light-load operation.

Enable and Soft Start

EN0 is the control pin of VREG5, VREG3 and VREF regulators. Bring this node down to GND disables those three regulators and minimize the shutdown supply current to 10 μA. Pulling this node up to 3.3 V or 5 V will turn the three regulators on to standby mode. The two switch mode power supplies (channel-1, channel-2) become ready to enable at this standby mode. The TPS51125A has an internal, 1.6 ms, voltage servo softstart for each channel. When the ENTRIPx pin becomes higher than the enable threshold voltage, which is typically 430 mV, an internal DAC begins ramping up the reference voltage to the PWM comparator. Smooth control of the output voltage is maintained during start up. As TPS51125A shares one DAC with both channels, if ENTRIPx pin becomes higher than the enable threshold voltage while another channel is starting up, soft start is postponed until another channel soft start has completed. If both of ENTRIP1 and ENTRIP2 become higher than the enable threshold voltage at a same time (within 60 μs), both channels start up at same time.
Table 4. Enabling State
EN0 ENTRIP1 ENTRIP2 VREF VREG5 VREG3 CH1 CH2 VCLK
GND Don’t Care Don’t Care Off Off Off Off Off Off R to GND Off Off On On On Off Off Off R to GND On Off On On On On Off Off R to GND Off On On On On Off On Off R to GND On On On On On On On Off
Open Off Off On On On Off Off Off Open On Off On On On On Off On Open Off On On On On Off On Off Open On On On On On On On On

VREG5/VREG3 Linear Regulators

There are two sets of 100-mA standby linear regulators which outputs 5 V and 3.3 V, respectively. The VREG5 serves as the main power supply for the analog circuitry of the device and provides the current for gate drivers. The VREG3 is intended mainly for auxiliary 3.3-V supply for the notebook system during standby mode.
Add high-quality X5R or X7R ceramic capacitor with a value of 10 μF or larger placed close to the VREG5 and VREG3 pins to stabilize LDOs. For VREG3, a 1-μF ceramic capacitor is acceptable when not loaded.
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TPS51125A
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
www.ti.com

VREG5 Switch Over

When the VO1 voltage becomes higher than 4.7 V AND channel-1 internal powergood flag is generated, internal 5-V LDO regulator is shut off and the VREG5 output is connected to VO1 by internal switch over MOSFET. The 510-μs powergood delay helps a switch over without glitch.

VREG3 Switch Over

When the VO2 voltage becomes higher than 3.15 V AND channel-2 internal powergood flag is generated, internal 3.3-V LDO regulator is shut off and the VREG3 output is connected to VO2 by internal switch over MOSFET. The 510-μs powergood delay helps a switch over without glitch.

Powergood

The TPS51125A has one powergood output that indicates 'high' when both switcher outputs are within the targets (AND gated). The powergood function is activated with 2-ms internal delay after ENTRIPx goes high. If the output voltage becomes within +/-5% of the target value, internal comparators detect power good state and the powergood signal becomes high after 510-μs internal delay. Therefore PGOOD goes high around 2.5 ms after ENTRIPx goes high. If the output voltage goes outside of +/-10% of the target value, the powergood signal becomes low after 2-μs internal delay. The powergood output is an open drain output and is needed to be pulled up outside.
Also note that, in the case of Auto-skip or Out-of-Audio™ mode, if the output voltage goes +10% above the target value and the power-good signal flags low, then the loop attempts to correct the output by turning on the low-side driver (forced PWM mode). After the feedback voltage returns to be within +5% of the target value and the power-good signal goes high, the controller returns back to auto-skip mode or Out-of-Audio™ mode.

Output Discharge Control

When ENTRIPx is low, the TPS51125A discharges outputs using internal MOSFET which is connected to VOx and GND. The current capability of these MOSFETs is limited to discharge slowly.

Low-Side Driver

The low-side driver is designed to drive high current low R represented by its internal resistance, which are 4 for VREG5 to DRVLx and 1.5 for DRVLx to GND. A dead time to prevent shoot through is internally generated between top MOSFET off to bottom MOSFET on, and bottom MOSFET off to top MOSFET on. 5-V bias voltage is delivered from VREG5 supply. The instantaneous drive current is supplied by an input capacitor connected between VREG5 and GND. The average drive current is equal to the gate charge at Vgs = 5 V times switching frequency. This gate drive current as well as the high­side gate drive current times 5 V makes the driving power which need to be dissipated from TPS51125A package.
N-channel MOSFET(s). The drive capability is
DS(on)

High-Side Driver

The high-side driver is designed to drive high current, low R floating driver, 5-V bias voltage is delivered from VREG5 supply. The average drive current is also calculated by the gate charge at Vgs = 5 V times switching frequency. The instantaneous drive current is supplied by the flying capacitor between VBSTx and LLx pins. The drive capability is represented by its internal resistance, which are 4 for VBSTx to DRVHx and 1.5for DRVHx to LLx.
N-channel MOSFET(s). When configured as a
DS(on)
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Page 25
18
1uF
100nF
100nF
100nF
PGND PGND PGND
- 15V/10mA
D0 D1
D2
D4
100nF
VO1(5V)
VCLK
13
15
13
15
Control
Input
3.3V
TPS51125ATPS51125A
EN0
GNDGND
EN0
Control
Input
(a) Control by MOSFET Switch (b) Control by Logic
TPS51125A
www.ti.com
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012

VCLK for Charge Pump

270-kHz clock signal can be used for charge pump circuit to generate approximately 15-V dc voltage. The clock signal becomes available when EN0 becomes higher than 2.4 V or open state. Example of control circuit is shown in Figure 38. Note that the clock driver uses VO1 as its power supply. Regardless of enable or disable of VCLK, power consumption of the TPS51125A is almost the same. Therefore even if VCLK is not used, one can let EN0 pin open or supply logic ‘high’, as shown in Figure 38, and let VCLK pin open. This approach further reduces the external part count.
Figure 38. Control Example of EN0 Master Enable
Figure 39. 15-V / 10-mA Charge Pump Configuration
Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback 25
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( ) ( )
( )
f
IN OUT OUT
TRIP RIPPLE TRIP
OCP
IN
DS on DS on
V V V
V I V
1
I
R 2 R 2 L V
- ´
= + = + ´
´ ´
( )
( ) ( )
( )
TRIP TRIP
TRIP
R k I A
V mV 24 mV
9
W ´ m
= -
TPS51125A
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
www.ti.com

Current Protection

TPS51125A has cycle-by-cycle over current limiting control. The inductor current is monitored during the ‘OFF’ state and the controller keeps the ‘OFF’ state during the inductor current is larger than the over current trip level. In order to provide both good accuracy and cost effective solution, TPS51125A supports temperature compensated MOSFET R setting resistor, R
. ENTRIPx terminal sources I
TRIP
the trip level is set to the OCL trip voltage V internally.
External leakage current to ENTRIPx pin should be minimized to obtain accurate OCL trip voltage. The inductor current is monitored by the voltage between GND pin and LLx pin so that LLx pin should be
connected to the drain terminal of the bottom MOSFET properly. Itrip has 4500 ppm/°C temperature slope to compensate the temperature dependency of the R that GND should be connected to the proper current sensing device, i.e. the source terminal of the bottom MOSFET.
As the comparison is done during the ‘OFF’ state, V current at over current threshold, I
sensing. ENTRIPx pin should be connected to GND through the trip voltage
DS(on)
TRIP
, can be calculated in Equation 4.
OCP
current, which is 10 μA typically at room temperature, and
TRIP
as below. Note that the V
. GND is used as the positive current sensing node so
DS(on)
sets valley level of the inductor current. Thus, the load
TRIP
is limited up to about 205 mV
TRIP
(3)
(4)
In an overcurrent condition, the current to the load exceeds the current to the output capacitor thus the output voltage tends to fall down. Eventually, it ends up with crossing the under voltage protection threshold and shutdown both channels.

Over/Under Voltage Protection

TPS51125A monitors a resistor divided feedback voltage to detect over and under voltage. When the feedback voltage becomes higher than 115% of the target voltage, the OVP comparator output goes high and the circuit latches as the top MOSFET driver OFF and the bottom MOSFET driver ON.
Also, TPS51125A monitors VOx voltage directly and if it becomes greater than 5.75 V the TPS51125A turns off the top MOSFET driver.
When the feedback voltage becomes lower than 60% of the target voltage, the UVP comparator output goes high and an internal UVP delay counter begins counting. After 32 μs, TPS51125A latches OFF both top and bottom MOSFETs drivers, and shut off both drivers of another channel. This function is enabled after 2 ms following ENTRIPx has become high.
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( ) ( )
( )
( )
( )
OUT
RIPPLE
V 20 mV 1 D 20 mV L
ESR
2 V I 2 V
´ ´ - ´ ´
= =
´
f
( )
( )
( )
(
)
( )
f
OUT OUT
IN m ax
TRIP
IND peak
DS on IN m ax
V
1
R L
V V V
I
V´
- ´
= + ´
( )
( )
(
)
( )
( )
( )
(
)
( )
f f
OUT OUT OUT OUT
IN max IN max
IND ripple IN max OUT max IN max
1 3
I I
V V V V V V
L
V V
´
´ ´
- ´ - ´
= = ´
( )
OUT
V 2.0
R1 R2
2.0
-
= ´
TPS51125A
www.ti.com
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012

UVLO Protection

TPS51125A has VREG5 under voltage lock out protection (UVLO). When the VREG5 voltage is lower than UVLO threshold voltage both switch mode power supplies are shut off. This is non-latch protection. When the VREG3 voltage is lower than (VO2 - 1 V), both switch mode power supplies are also shut off.

Thermal Shutdown

TPS51125A monitors the temperature of itself. If the temperature exceeds the threshold value (typically 150°C), TPS51125A is shut off including LDOs. This is non-latch protection.

External Parts Selection

The external components selection is much simple in D-CAP™ Mode.

1. Determine Output Voltage

The output voltage is programmed by the voltage-divider resistor, R1 and R2 shown in Figure 37. R1 is connected between VFBx pin and the output, and R2 is connected betwen the VFBx pin and GND. Recommended R2 value is from 10 kto 20 k. Determine R1 using equation as below.
(5)

2. Choose the Inductor

The inductance value should be determined to give the ripple current of approximately 1/4 to 1/2 of maximum output current. Larger ripple current increases output ripple voltage and improves S/N ratio and helps stable operation.
(6)
The inductor also needs to have low DCR to achieve good efficiency, as well as enough room above peak inductor current before saturation. The peak inductor current can be estimated as follows.
(7)

3. Choose the Output Capacitor(s)

Organic semiconductor capacitor(s) or specialty polymer capacitor(s) are recommended. Determine ESR to meet required ripple voltage. A quick approximation is as shown in Equation 8.
where
D is the duty cycle
the required output ripple slope is approximately 20 mV per TSW(switching period) in terms of VFB terminal voltage (8)

4. Choose the Low-Side MOSFET

It is highly recommended that the low-side MOSFET should have an integrated Schottky barrier diode, or an external Schottky barrier diode in parallel to achieve stable operation.
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TPS51125A
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
www.ti.com

Layout Considerations

Certain points must be considered before starting a layout work using the TPS51125A.
TPS51125A has only one GND pin and special care of GND trace design makes operation stable, especially when both channels operate. Group GND terminals of output voltage divider of both channels and the VREF capacitor as close as possible, connect them to an inner GND plane with PowerPad, overcurrent setting resistor and EN0 pull-down resistor as shown in the thin GND line of Figure 40. This trace is named Signal Ground (SGND). Group ground terminals of VIN capacitor(s), VOUT capacitor(s) and source of low-side MOSFETs as close as possible, and connect them to another GND plane with GND pin of the device, GND terminal of VREG3 and VREG5 capacitors and 15-V charge-pump circuit as shown in the bold GND line of
Figure 40. This trace is named Power Ground (PGND). SGND should be connected to PGND at the middle
point between ground terminal of VOUT capacitors.
Inductor, VOUT capacitor(s), VIN capacitor(s) and MOSFETs are the power components and should be placed on one side of the PCB (solder side). Power components of each channel should be at the same distance from the TPS51125A. Other small signal parts should be placed on another side (component side). Inner GND planes above should shield and isolate the small signal traces from noisy power lines.
PCB trace defined as LLx node, which connects to source of high-side MOSFET, drain of low-side MOSFET and high-voltage side of the inductor, should be as short and wide as possible.
High-quality X5R or X7R ceramic bypass capacitor of following capacitance value should be placed close to the device and traces should be no longer than 10 mm.
VREG5: 10 μF or larger – VREG3: 10 μF or larger (1 μF is acceptable when not loaded.) – VREF: 220 nF to 1 μF
Connect the overcurrent setting resistors from ENTRIPx to SGND and close to the device, right next to the device if possible.
The discharge path (VOx) should have a dedicated trace to the output capacitor; separate from the output voltage sensing trace. When LDO5 is switched over Vo1 trace should be 1.5 mm with no loops. When LDO3 is switched over and loaded Vo2 trace should also be 1.5 mm with no loops. There is no restriction for just monitoring Vox. Make the feedback current setting resistor (the resistor between VFBx to SGND) close to the device. Place on the component side and avoid vias between this resistor and the device.
Connections from the drivers to the respective gate of the high-side or the low-side MOSFET should be as short as possible to reduce stray inductance. Use 0.65-mm (25 mils) or wider trace and via(s) of at least 0.5 mm (20 mils) diameter along this trace.
All sensitive analog traces and components such as VOx, VFBx, VREF, GND, EN0, ENTRIPx, PGOOD, TONSEL and SKIPSEL should be placed away from high-voltage switching nodes such as LLx, DRVLx, DRVHx and VCLK nodes to avoid coupling.
Traces for VFB1 and VFB2 should be short and laid apart each other to avoid channel to channel interference.
In order to effectively remove heat from the package, prepare thermal land and solder to the package’s thermal pad. Three by three or more vias with a 0.33-mm (13 mils) diameter connected from the thermal land to the internal ground plane should be used to help dissipation. This thermal land underneath the package should be connected to SGND, and should NOT be connected to PGND.
28 Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated
Product Folder Links: TPS51125A
Page 29
Driver and switch node traces are shown for CH1 only.
*
Cin
Cin
L
L
Vout1
HS-MOSFET
LS-MOSFET
HS-MOSFET
Vout2
Cout
To CH1 Vout divider
To CH2 Vout divider
To VO2
To VO1
LS-MOSFET
Bottom Layer
VIN
GND
Connection to GND island
Connection to GND
Connection of Vout
Top Layer
TPS51125A
C
VREF
CH1 Vout divider
C
VREG5
DRVH1*
LL1*
DRVL1*
Through hole
CH2 Vout divider
Connection to GND island
GND
Inner Layer
C
VREG3
Cout
GND island
TPS51125A
DRVL1DRVL2
PowerPAD
VFB1VFB2 VREF
GND
VREG5
VREG3
220 nF
SGND
SGND
5 3 2
12 19
15
10 mF
817
10 mF
V
IN
V
IN
V
OUT1
V
OUT2
PGND PGND
Charge
Pump
VCLK
15 V OUT
TPS51125A
www.ti.com
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012
Figure 40. GND system of DC/DC converter using the TPS51125A
Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback 29
Figure 41. PCB Layout Design
Product Folder Links: TPS51125A
Page 30
9
10
11
12
VO1
PGOOD
VO2
VREG3
TPS51125ARGE
(QFN24)
13 14 15 16
VBST1
DRVL1
LL1
DRVH1
VBST2
DRVH2
LL2
DRVL2
17
E
N
0
8
E
N
T
R
I
P
2
7
6
V
F
B
2
5
V
R
E
F
4
T
O
N
S
E
L
3
V
F
B
1
2 1
E
N
T
R
I
P
1
18
S
K
I
P
S
E
L
19
20
G
N
D
21
V
I
N
22
23
24
V
C
L
K
VO1 5V/8A
L2
3.3mH
Q3
IRF7821
VO1_GND
PGND
C9
10mF
C7
0.1mF
VIN
VO2
3.3V/8A
L1
3.3mH
Q1
IRF7821
VO2_GND
C4
0.1mF
VIN
PowerPAD
C11
10mF
V
R
E
G
5
C10
POSCAP
330mF
PGND
R9
5.1W
VIN
5.5 ~ 28V
R7
5.1W
C2
10mF
C1
10mF
PGND
C5
POSCAP
330mF
5V/100mA
PGND
R4
30kW
R2
20kW
R1
13kW
SGND
VREG5
VREG5
R8
100kW
PGND
R3
20kW
C6
0.22mF
PGND
SGND
R6
130kW
SGND
R5
130kW
C16 1uF
C13 100nF
C14 100nF
C15 100nF
PGND
15V/10mA
D1
D2
D3
D4
C12 100nF
C3
10mF
PGND
3.3V/100mA
C8
10mF
VREF
VO1
EN0
PGNDPGND
SGND
VREF
R10 620kW
S1
SGND
Q2
FDS6690AS
Q4
FDS6690AS
TPS51125A
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012

Application Circuit

www.ti.com
Figure 42. 5-V/8-A, 3.3-V/8-A Application Circuit (245-kHz/305-kHz Setting)
Table 5. List of Materials for 5-V/8-A, 3.3-V/8-A Application Circuit
SYMBOL SPECIFICATION MANUFACTURER PART NUMBER
3.3 μH, 15.6 A, 5.92 m
30 V, 12 m Fairchild FDS6690AS
C1, C2, C8, C9 10 μ F, 25 V Taiyo Yuden TMK325BJ106MM C3, C11 10 μF, 6.3 V TDK C2012X5R0J106K C5, C10 330 μF, 6.3 V, 25 m Sanyo 6TPE330ML
L1, L2 TOKO FDA1055-3R3M Q1, Q3 30 V, 9.5 m IR IRF7821
(1) Please use MOSFET with integrated Schottky barrier diode (SBD) for low side, or add SBD in parallel
(1)
Q2, Q4
with normal MOSFET.
30 Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated
Product Folder Links: TPS51125A
Page 31
TPS51125A
www.ti.com
SLUS976F –SEPTEMBER 2009–REVISED SEPTEMBER 2012

REVISION HISTORY

Changes from Revision B (September, 2009) to Revision A Page
Added Table 1 ...................................................................................................................................................................... 1
Added Figure 41 ................................................................................................................................................................. 29
Changes from Revision A (January 2010) to Revision B Page
Changed LDO Output Capacitance Requirement table from "at least" to "at most" ............................................................ 1
Changed VIN standby current value from 250 µA to 150 µA. .............................................................................................. 4
Changes from Revision B (September 2009) to Revision C Page
Added note to table ............................................................................................................................................................... 6
Added an updated Switcher Controller Block diagram. ...................................................................................................... 10
Changes from Revision C (April 2011) to Revision D Page
Added an updated Switcher Controller Block diagram. ...................................................................................................... 10
Changed bulletted duty cycle description. .......................................................................................................................... 27
Changes from Revision D (June 2011) to Revision E Page
Added Input voltage range parameter LL1, LL2, pulse width < 20 ns with a value of -5.0 V to 30 V in ABSOLUTE
MAXIMUM RATINGS table ................................................................................................................................................... 2
Changes from Revision E (MARCH 2012) to Revision F Page
Added Electrostatic discharge ratings in ABSOLUTE MAXIMUM RATINGS table .............................................................. 2
Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback 31
Product Folder Links: TPS51125A
Page 32
PACKAGE OPTION ADDENDUM
www.ti.com
PACKAGING INFORMATION
Orderable Device Status
TPS51125ARGER ACTIVE VQFN RGE 24 3000 Green (RoHS
TPS51125ARGET ACTIVE VQFN RGE 24 250 Green (RoHS
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
Package Type Package
(1)
Drawing
Pins Package
Qty
Eco Plan
(2)
& no Sb/Br)
& no Sb/Br)
Lead/Ball Finish
(6)
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 51125A
CU NIPDAU Level-2-260C-1 YEAR -40 to 85 51125A
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
9-Sep-2014
Samples
Addendum-Page 1
Page 33
PACKAGE OPTION ADDENDUM
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
9-Sep-2014
Addendum-Page 2
Page 34
PACKAGE MATERIALS INFORMATION
www.ti.com 12-Aug-2015
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
TPS51125ARGER VQFN RGE 24 3000 330.0 12.4 4.25 4.25 1.15 8.0 12.0 Q2
TPS51125ARGET VQFN RGE 24 250 180.0 12.4 4.25 4.25 1.15 8.0 12.0 Q2
Type
Package
Drawing
Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm)B0(mm)K0(mm)P1(mm)W(mm)
Pin1
Quadrant
Pack Materials-Page 1
Page 35
PACKAGE MATERIALS INFORMATION
www.ti.com 12-Aug-2015
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS51125ARGER VQFN RGE 24 3000 367.0 367.0 35.0
TPS51125ARGET VQFN RGE 24 250 210.0 185.0 35.0
Pack Materials-Page 2
Page 36
Page 37
Page 38
Page 39
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