Dual-Synchronous, Step-Down Controller with Out-of-Audio™ Operation
and 100-mA LDOs for Notebook System Power
Check for Samples: TPS51125A
1
FEATURES
2
•Wide Input Voltage Range: 5.5 V to 28 V
•Output Voltage Range: 2 V to 5.5 V•I/O Supplies
•Built-in 100-mA 5-V/3.3-V LDO with Switches•System Power Supplies
•Built-in 1% 2-V Reference Output
•With/Without Out-of-Audio™ Mode Selectable
Light Load and PWM only Operation
•Internal 1.6-ms Voltage Servo Softstart
•Adaptive On-Time Control Architecture with
Four Selectable Frequency Setting
•4500 ppm/°C R
•Built-In Output Discharge
•Power Good Output
•Built-in OVP/UVP/OCP
•Thermal Shutdown (Non-latch)
•QFN24 (RGE)
Current Sensing
DS(on)
APPLICATIONS
•Notebook Computers
DESCRIPTION
The TPS51125A is a cost effective, dual-synchronous
buck controller targeted for notebook system power
supply solutions. It provides 5-V and 3.3-V LDOs and
requires few external components. The 270-kHz
VCLK output can be used to drive an external charge
pump, generating gate drive voltage for the load
switches without reducing the main converter’s
efficiency. The TPS51125A supports high efficiency,
fast transient response and provides a combined
power-good signal. Out-of-Audio™ mode light-load
operation enables low acoustic noise at much higher
efficiency than conventional forced PWM operation.
Adaptiveon-timeD-CAP™controlprovides
convenient and efficient operation. The part operates
with supply input voltages ranging from 5.5 V to 28 V
and supports output voltages from 2 V to 5.5 V. The
TPS51125A is available in a 24-pin QFN package
and is specified from -40°C to 85°C ambient
temperature range.
Table 1. Differences between the TPS51125 and TPS51125A
LDO Output Capacitance Requirement
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2Out-of-Audio, D-CAP are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
(1 µF acceptable at no load)(1 µF acceptable at no load)
TPS51125TPS51125A
VREG5: at least 33 µFVREG5: 10 µF or larger (X5R or X7R)
VREG3: at most 10 µFVREG3: 10 µF or larger (X5R or X7R)
VREF: 0.22 µF to 1 µFVREF: 0.22 µF to 1 µF (X5R or X7R)
Human body model (HBM) QSS 009-105 (JESD22-A114A)2
Charged device model (CDM) QSS 009-147 (JESD22-C101B.01)1.5
Junction temperature range–40125
Storage temperature–55150
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltage values are with respect to the corresponding LLx terminal.
VIN16IHigh voltage power supply input for 5-V/3.3-V LDO.
GND15-Ground.
VREG38O
VREG517O
VREF3O
EN013I/O
ENTRIP11Channel 1 and Channel 2 enable and OCL trip setting pins.Connect resistor from this pin to GND to
ENTRIP26
VO124Output connection to SMPS. These terminals work as fixed voltage inputs and output discharge
VO27
VFB12SMPS feedback inputs. Connect with feedback resistor divider.
VFB25
PGOOD23OPower Good window comparator output for channel 1 and 2. (Logical AND)
SKIPSEL14I
TONSEL4I300 kHz/375 kHz setting : connect to VREG3
DRVL119Low-side N-channel MOSFET driver outputs. GND referenced drivers.
DRVL212
VBST122Supply input for high-side N-channel MOSFET driver (boost terminal).
VBST29
DRVH121High-side N-channel MOSFET driver outputs. LL referenced drivers.
DRVH210
LL120Switch node connections for high-side drivers, current limit and control circuitry.
LL211
VCLK18O270-kHz clock output for 15-V charge pump.
I/ODESCRIPTION
3.3-V power supply output. Connect 10-μF or larger, high-quality X5R or X7R ceramic capacitor to
Power GND near the device. A 1-μF ceramic capacitor is acceptable when not loaded.
5-V power supply output. Connect 10-μF or larger, high-quality X5R or X7R ceramic capacitor to
Power GND near the device.
2-V reference voltage output. Connect 220-nF to 1-μF, high-quality X5R or X7R ceramic capacitor to
Signal GND near the device.
Master enable input.
Open : LDOs on, and ready to turn on VCLK and switcher channels.
620 kΩ to GND : enable both LDOs, VCLK off and ready to turn on switcher channels. Power
consumption is almost the same as the case of VCLK = ON.
GND : disable all circuit
I/O
I/O
set threshold for synchronous R
inputs. VO1 and VO2 also work as 5 V and 3.3 V switch over return power input respectively.
I
Selection pin for operation mode:
OOA auto skip : Connect to VREG3 or VREG5
Auto skip : Connect to VREF
PWM only : Connect to GND
On-time adjustment pin.
365 kHz/460 kHz setting : connect to VREG5
245 kHz/305 kHz setting : connect to VREF
200 kHz/250 kHz setting : connect to GND
O
I
O
I
sense. Short to ground to shutdown a switcher channel.
The main control loop of the switch mode power supply (SMPS) is designed as an adaptive on-time pulse width
modulation (PWM) controller. It supports a proprietary D-CAP™ mode. D-CAP™ mode does not require external
compensation circuit and is suitable for low external component count configuration when used with appropriate
amount of ESR at the output capacitor(s).
At the beginning of each cycle, the synchronous top MOSFET is turned on, or becomes ‘ON’ state. This
MOSFET is turned off, or becomes ‘OFF’ state, after internal one shot timer expires. This one shot is determined
by VINand V
to keep frequency fairly constant over input voltage range, hence it is called adaptive on-time
OUT
control. The MOSFET is turned on again when the feedback point voltage, VFB, decreased to match with internal
2-V reference. The inductor current information is also monitored and should be below the over current threshold
to initiate this new cycle. Repeating operation in this manner, the controller regulates the output voltage. The
synchronous bottom or the “rectifying” MOSFET is turned on at the beginning of each ‘OFF’ state to keep the
conduction loss minimum.The rectifying MOSFET is turned off before the top MOSFET turns on at next switching
cycle or when inductor current information detects zero level. In the auto-skip mode or the OOA skip mode, this
enables seamless transition to the reduced frequency operation at light load condition so that high efficiency is
kept over broad range of load current.
Adaptive On-Time Control and PWM Frequency
TPS51125A does not have a dedicated oscillator on board. However, the part runs with pseudo-constant
frequency by feed-forwarding the input and output voltage into the on-time, one-shot timer. The on-time is
controlled inverse proportional to the input voltage and proportional to the output voltage so that the duty ratio will
be kept as VOUT/VIN technically with the same cycle time. The frequencies are set by TONSEL terminal
connection as Table 3.
From small-signal loop analysis, a buck converter using D-CAPTMmode can be simplified as below.
Figure 37. Simplifying the Modulator
The output voltage is compared with internal reference voltage after divider resistors, R1 and R2. The PWM
comparator determines the timing to turn on high-side MOSFET. The gain and speed of the comparator is high
enough to keep the voltage at the beginning of each on cycle substantially constant. For the loop stability, the
0dB frequency, f0, defined below need to be lower than 1/4 of the switching frequency.
As f0is determined solely by the output capacitor's characteristics, loop stability of D-CAPTMmode is determined
by the capacitor's chemistry. For example, specialty polymer capacitors (SP-CAP) have Co in the order of
several 100 μF and ESR in range of 10 mΩ. These will make f0in the order of 100 kHz or less and the loop will
be stable. However, ceramic capacitors have f0at more than 700 kHz, which is not suitable for this operational
mode.
Ramp Signal
The TPS51125A adds a ramp signal to the 2-V reference in order to improve its jitter performance. As described
in the previous section, the feedback voltage is compared with the reference information to keep the output
voltage in regulation. By adding a small ramp signal to the reference, the S/N ratio at the onset of a new
switching cycle is improved. Therefore the operation becomes less jitter and stable. The ramp signal is controlled
to start with -20mV at the beginning of ON-cycle and to become 0 mV at the end of OFF-cycle in steady state. By
using this scheme, the TPS51125A improve jitter performance without sacrificing the reference accuracy.
The TPS51125A automatically reduces switching frequency at light load conditions to maintain high efficiency.
This reduction of frequency is achieved smoothly and without increase of V
described as follows. As the output current decreases from heavy load condition, the inductor current is also
reduced and eventually comes to the point that its ‘valley’ touches zero current, which is the boundary between
continuous conduction and discontinuous conduction modes. The rectifying MOSFET is turned off when this zero
inductor current is detected. As the load current further decreased, the converter runs in discontinuous
conduction mode and it takes longer and longer to discharge the output capacitor to the level that requires next
‘ON’ cycle. The ON time is kept the same as that in the heavy load condition. In reverse, when the output current
increase from light load to heavy load, switching frequency increases to the preset value as the inductor current
reaches to the continuous conduction. The transition load point to the light load operation I
threshold between continuous and discontinuous conduction mode) can be calculated as follows;
where f is the PWM switching frequency.
Switching frequency versus output current in the light load condition is a function of L, VINand V
decreases almost proportional to the output current from the I
at I
Out-of-Audio™ (OOA) light-load mode is a unique control feature that keeps the switching frequency above
acoustic audible frequencies toward virtually no load condition while maintaining best of the art high conversion
efficiency. When the Out-of-Audio™ operation is selected, OOA control circuit monitors the states of both
MOSFET and force to change into the ‘ON’ state if both of MOSFETs are off for more than 32 μs. This means
that the top MOSFET is turned on even if the output voltage is higher than the target value so that the output
capacitor is tends to be overcharged.
The OOA control circuit detects the over-voltage condition and begins to modulate the on time to keep the output
voltage regulated. As a result, the output voltage becomes 0.5% higher than normal light-load operation.
Enable and Soft Start
EN0 is the control pin of VREG5, VREG3 and VREF regulators. Bring this node down to GND disables those
three regulators and minimize the shutdown supply current to 10 μA. Pulling this node up to 3.3 V or 5 V will turn
the three regulators on to standby mode. The two switch mode power supplies (channel-1, channel-2) become
ready to enable at this standby mode. The TPS51125A has an internal, 1.6 ms, voltage servo softstart for each
channel. When the ENTRIPx pin becomes higher than the enable threshold voltage, which is typically 430 mV,
an internal DAC begins ramping up the reference voltage to the PWM comparator. Smooth control of the output
voltage is maintained during start up. As TPS51125A shares one DAC with both channels, if ENTRIPx pin
becomes higher than the enable threshold voltage while another channel is starting up, soft start is postponed
until another channel soft start has completed. If both of ENTRIP1 and ENTRIP2 become higher than the enable
threshold voltage at a same time (within 60 μs), both channels start up at same time.
Table 4. Enabling State
EN0ENTRIP1ENTRIP2VREFVREG5VREG3CH1CH2VCLK
GNDDon’t CareDon’t CareOffOffOffOffOffOff
R to GNDOffOffOnOnOnOffOffOff
R to GNDOnOffOnOnOnOnOffOff
R to GNDOffOnOnOnOnOffOnOff
R to GNDOnOnOnOnOnOnOnOff
There are two sets of 100-mA standby linear regulators which outputs 5 V and 3.3 V, respectively. The VREG5
serves as the main power supply for the analog circuitry of the device and provides the current for gate drivers.
The VREG3 is intended mainly for auxiliary 3.3-V supply for the notebook system during standby mode.
Add high-quality X5R or X7R ceramic capacitor with a value of 10 μF or larger placed close to the VREG5 and
VREG3 pins to stabilize LDOs. For VREG3, a 1-μF ceramic capacitor is acceptable when not loaded.
When the VO1 voltage becomes higher than 4.7 V AND channel-1 internal powergood flag is generated, internal
5-V LDO regulator is shut off and the VREG5 output is connected to VO1 by internal switch over MOSFET. The
510-μs powergood delay helps a switch over without glitch.
VREG3 Switch Over
When the VO2 voltage becomes higher than 3.15 V AND channel-2 internal powergood flag is generated,
internal 3.3-V LDO regulator is shut off and the VREG3 output is connected to VO2 by internal switch over
MOSFET. The 510-μs powergood delay helps a switch over without glitch.
Powergood
The TPS51125A has one powergood output that indicates 'high' when both switcher outputs are within the
targets (AND gated). The powergood function is activated with 2-ms internal delay after ENTRIPx goes high. If
the output voltage becomes within +/-5% of the target value, internal comparators detect power good state and
the powergood signal becomes high after 510-μs internal delay. Therefore PGOOD goes high around 2.5 ms
after ENTRIPx goes high. If the output voltage goes outside of +/-10% of the target value, the powergood signal
becomes low after 2-μs internal delay. The powergood output is an open drain output and is needed to be pulled
up outside.
Also note that, in the case of Auto-skip or Out-of-Audio™ mode, if the output voltage goes +10% above the
target value and the power-good signal flags low, then the loop attempts to correct the output by turning on the
low-side driver (forced PWM mode). After the feedback voltage returns to be within +5% of the target value and
the power-good signal goes high, the controller returns back to auto-skip mode or Out-of-Audio™ mode.
Output Discharge Control
When ENTRIPx is low, the TPS51125A discharges outputs using internal MOSFET which is connected to VOx
and GND. The current capability of these MOSFETs is limited to discharge slowly.
Low-Side Driver
The low-side driver is designed to drive high current low R
represented by its internal resistance, which are 4 Ω for VREG5 to DRVLx and 1.5 Ω for DRVLx to GND. A dead
time to prevent shoot through is internally generated between top MOSFET off to bottom MOSFET on, and
bottom MOSFET off to top MOSFET on. 5-V bias voltage is delivered from VREG5 supply. The instantaneous
drive current is supplied by an input capacitor connected between VREG5 and GND. The average drive current
is equal to the gate charge at Vgs = 5 V times switching frequency. This gate drive current as well as the highside gate drive current times 5 V makes the driving power which need to be dissipated from TPS51125A
package.
N-channel MOSFET(s). The drive capability is
DS(on)
High-Side Driver
The high-side driver is designed to drive high current, low R
floating driver, 5-V bias voltage is delivered from VREG5 supply. The average drive current is also calculated by
the gate charge at Vgs = 5 V times switching frequency. The instantaneous drive current is supplied by the flying
capacitor between VBSTx and LLx pins. The drive capability is represented by its internal resistance, which are
4 Ω for VBSTx to DRVHx and 1.5Ω for DRVHx to LLx.
270-kHz clock signal can be used for charge pump circuit to generate approximately 15-V dc voltage. The clock
signal becomes available when EN0 becomes higher than 2.4 V or open state. Example of control circuit is
shown in Figure 38. Note that the clock driver uses VO1 as its power supply. Regardless of enable or disable of
VCLK, power consumption of the TPS51125A is almost the same. Therefore even if VCLK is not used, one can
let EN0 pin open or supply logic ‘high’, as shown in Figure 38, and let VCLK pin open. This approach further
reduces the external part count.
TPS51125A has cycle-by-cycle over current limiting control. The inductor current is monitored during the ‘OFF’
state and the controller keeps the ‘OFF’ state during the inductor current is larger than the over current trip level.
In order to provide both good accuracy and cost effective solution, TPS51125A supports temperature
compensated MOSFET R
setting resistor, R
. ENTRIPx terminal sources I
TRIP
the trip level is set to the OCL trip voltage V
internally.
External leakage current to ENTRIPx pin should be minimized to obtain accurate OCL trip voltage.
The inductor current is monitored by the voltage between GND pin and LLx pin so that LLx pin should be
connected to the drain terminal of the bottom MOSFET properly. Itrip has 4500 ppm/°C temperature slope to
compensate the temperature dependency of the R
that GND should be connected to the proper current sensing device, i.e. the source terminal of the bottom
MOSFET.
As the comparison is done during the ‘OFF’ state, V
current at over current threshold, I
sensing. ENTRIPx pin should be connected to GND through the trip voltage
DS(on)
TRIP
, can be calculated in Equation 4.
OCP
current, which is 10 μA typically at room temperature, and
TRIP
as below. Note that the V
. GND is used as the positive current sensing node so
DS(on)
sets valley level of the inductor current. Thus, the load
TRIP
is limited up to about 205 mV
TRIP
(3)
(4)
In an overcurrent condition, the current to the load exceeds the current to the output capacitor thus the output
voltage tends to fall down. Eventually, it ends up with crossing the under voltage protection threshold and
shutdown both channels.
Over/Under Voltage Protection
TPS51125A monitors a resistor divided feedback voltage to detect over and under voltage. When the feedback
voltage becomes higher than 115% of the target voltage, the OVP comparator output goes high and the circuit
latches as the top MOSFET driver OFF and the bottom MOSFET driver ON.
Also, TPS51125A monitors VOx voltage directly and if it becomes greater than 5.75 V the TPS51125A turns off
the top MOSFET driver.
When the feedback voltage becomes lower than 60% of the target voltage, the UVP comparator output goes
high and an internal UVP delay counter begins counting. After 32 μs, TPS51125A latches OFF both top and
bottom MOSFETs drivers, and shut off both drivers of another channel. This function is enabled after 2 ms
following ENTRIPx has become high.
TPS51125A has VREG5 under voltage lock out protection (UVLO). When the VREG5 voltage is lower than
UVLO threshold voltage both switch mode power supplies are shut off. This is non-latch protection. When the
VREG3 voltage is lower than (VO2 - 1 V), both switch mode power supplies are also shut off.
Thermal Shutdown
TPS51125A monitors the temperature of itself. If the temperature exceeds the threshold value (typically 150°C),
TPS51125A is shut off including LDOs. This is non-latch protection.
External Parts Selection
The external components selection is much simple in D-CAP™ Mode.
1. Determine Output Voltage
The output voltage is programmed by the voltage-divider resistor, R1 and R2 shown in Figure 37. R1 is
connected between VFBx pin and the output, and R2 is connected betwen the VFBx pin and GND.
Recommended R2 value is from 10 kΩ to 20 kΩ. Determine R1 using equation as below.
(5)
2. Choose the Inductor
The inductance value should be determined to give the ripple current of approximately 1/4 to 1/2 of maximum
output current. Larger ripple current increases output ripple voltage and improves S/N ratio and helps stable
operation.
(6)
The inductor also needs to have low DCR to achieve good efficiency, as well as enough room above peak
inductor current before saturation. The peak inductor current can be estimated as follows.
(7)
3. Choose the Output Capacitor(s)
Organic semiconductor capacitor(s) or specialty polymer capacitor(s) are recommended. Determine ESR to meet
required ripple voltage. A quick approximation is as shown in Equation 8.
where
•D is the duty cycle
•the required output ripple slope is approximately 20 mV per TSW(switching period) in terms of VFB terminal
voltage(8)
4. Choose the Low-Side MOSFET
It is highly recommended that the low-side MOSFET should have an integrated Schottky barrier diode, or an
external Schottky barrier diode in parallel to achieve stable operation.
Certain points must be considered before starting a layout work using the TPS51125A.
•TPS51125A has only one GND pin and special care of GND trace design makes operation stable, especially
when both channels operate. Group GND terminals of output voltage divider of both channels and the VREF
capacitor as close as possible, connect them to an inner GND plane with PowerPad, overcurrent setting
resistor and EN0 pull-down resistor as shown in the thin GND line of Figure 40. This trace is named Signal
Ground (SGND). Group ground terminals of VIN capacitor(s), VOUT capacitor(s) and source of low-side
MOSFETs as close as possible, and connect them to another GND plane with GND pin of the device, GND
terminal of VREG3 and VREG5 capacitors and 15-V charge-pump circuit as shown in the bold GND line of
Figure 40. This trace is named Power Ground (PGND). SGND should be connected to PGND at the middle
point between ground terminal of VOUT capacitors.
•Inductor, VOUT capacitor(s), VIN capacitor(s) and MOSFETs are the power components and should be
placed on one side of the PCB (solder side). Power components of each channel should be at the same
distance from the TPS51125A. Other small signal parts should be placed on another side (component side).
Inner GND planes above should shield and isolate the small signal traces from noisy power lines.
•PCB trace defined as LLx node, which connects to source of high-side MOSFET, drain of low-side MOSFET
and high-voltage side of the inductor, should be as short and wide as possible.
•High-quality X5R or X7R ceramic bypass capacitor of following capacitance value should be placed close to
the device and traces should be no longer than 10 mm.
– VREG5: 10 μF or larger
– VREG3: 10 μF or larger (1 μF is acceptable when not loaded.)
– VREF: 220 nF to 1 μF
•Connect the overcurrent setting resistors from ENTRIPx to SGND and close to the device, right next to the
device if possible.
•The discharge path (VOx) should have a dedicated trace to the output capacitor; separate from the output
voltage sensing trace. When LDO5 is switched over Vo1 trace should be 1.5 mm with no loops. When LDO3
is switched over and loaded Vo2 trace should also be 1.5 mm with no loops. There is no restriction for just
monitoring Vox. Make the feedback current setting resistor (the resistor between VFBx to SGND) close to the
device. Place on the component side and avoid vias between this resistor and the device.
•Connections from the drivers to the respective gate of the high-side or the low-side MOSFET should be as
short as possible to reduce stray inductance. Use 0.65-mm (25 mils) or wider trace and via(s) of at least 0.5
mm (20 mils) diameter along this trace.
•All sensitive analog traces and components such as VOx, VFBx, VREF, GND, EN0, ENTRIPx, PGOOD,
TONSEL and SKIPSEL should be placed away from high-voltage switching nodes such as LLx, DRVLx,
DRVHx and VCLK nodes to avoid coupling.
•Traces for VFB1 and VFB2 should be short and laid apart each other to avoid channel to channel
interference.
•In order to effectively remove heat from the package, prepare thermal land and solder to the package’s
thermal pad. Three by three or more vias with a 0.33-mm (13 mils) diameter connected from the thermal land
to the internal ground plane should be used to help dissipation. This thermal land underneath the package
should be connected to SGND, and should NOT be connected to PGND.
Changes from Revision A (January 2010) to Revision BPage
•Changed LDO Output Capacitance Requirement table from "at least" to "at most" ............................................................ 1
•Changed VIN standby current value from 250 µA to 150 µA. .............................................................................................. 4
Changes from Revision B (September 2009) to Revision CPage
•Added note to table ............................................................................................................................................................... 6
•Added an updated Switcher Controller Block diagram. ...................................................................................................... 10
Changes from Revision C (April 2011) to Revision DPage
•Added an updated Switcher Controller Block diagram. ...................................................................................................... 10
Changes from Revision D (June 2011) to Revision EPage
•Added Input voltage range parameter LL1, LL2, pulse width < 20 ns with a value of -5.0 V to 30 V in ABSOLUTE
MAXIMUM RATINGS table ................................................................................................................................................... 2
Changes from Revision E (MARCH 2012) to Revision FPage
•Added Electrostatic discharge ratings in ABSOLUTE MAXIMUM RATINGS table .............................................................. 2
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Package Type Package
(1)
Drawing
Pins Package
Qty
Eco Plan
(2)
& no Sb/Br)
& no Sb/Br)
Lead/Ball Finish
(6)
CU NIPDAULevel-2-260C-1 YEAR-40 to 8551125A
CU NIPDAULevel-2-260C-1 YEAR-40 to 8551125A
MSL Peak Temp
(3)
Op Temp (°C)Device Marking
(4/5)
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
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