Datasheet TPS2376PWRG4, TPS2376 Datasheet (Texas Instruments)

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Page 1

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FEATURES APPLICATIONS

2 3 4

VSS

CLASS UVLO

DET

RTN

VDD

ILIM

2 3 4

VSS

CLASS N/C

DET

RTN

VDD

ILIM

TPS2375/77 (TOP VIEW)

TPS2376

(TOP VIEW)

DESCRIPTION

TPS2375

SMAJ58A

Data to

Ethernet PHY

VDD

VSS

CLASS

DET

RTN

Data to

Ethernet

PHY

4 5

7 8

TO DC/DC

CONVERTER

ILIM

RJ−45

DF01S

2 Places

Note: Class 3 PD Depicted. PG Pullup Resistor Is Optional.

Pair

Spare

Pair

Spare

Pair

Input

Current

RTN

Detect Classify

Power Up & Inrush

Class 3

(PG-RTN)

100

k

100 V

100 F,

(DET)

24.9 k 1 %

(ILIM)

178 k 1 %

(ICLASS)

357  1 %

100 V

0.1F,

10 %

Note: All Voltages With Respect to VSS.

Current

TPS2375 TPS2376 TPS2377

SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004

IEEE 802.3af PoE POWERED DEVICE CONTROLLERS

• VoIP Phones

• Fully Supports IEEE 802.3af Specification

• WLAN Access Points

• Integrated 0.58- Ω , 100-V, Low-Side Switch

• Security Cameras

• 15-kV System Level ESD Capable

• Internet Appliances

• Supports Use of Low-Cost Silicon Rectifiers

• POS Terminals

• Programmable Inrush Current Control

• Fixed 450-mA Current Limit

• Fixed and Adjustable UVLO Options

• Open-Drain, Power-Good Reporting

• Overtemperature Protection

• Industrial Temperature Range: -40 ° C to 85 ° C

• 8-Pin SOIC and TSSOP Packages

These easy-to-use 8-pin integrated circuits contain all of the features needed to develop an IEEE 802.3af compliant powered device (PD). The TPS2375 family is a second generation PDC (PD Controller) featuring 100-V ratings and a true open-drain, power-good function.

In addition to the basic functions of detection, classification and undervoltage lockout (UVLO), these controllers include an adjustable inrush limiting feature. The TPS2375 has 802.3af compliant UVLO limits, the TPS2377 has legacy UVLO limits, and the TPS2376 has a programmable UVLO with a dedicated input pin.

The TPS2375 family specifications incorporate a voltage offset of 1.5 V between its limits and the IEEE 802.3af specifications to accommodate the required input diode bridges used to make the PD polarity insensitive.

Additional resources can be found on the TI Web site www.ti.com.

Figure 1. Typical Application Circuit and Startup Waveforms

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

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AVAILABLE OPTIONS

ABSOLUTE MAXIMUM RATINGS

DISSIPATION RATING TABLE

(1)

TPS2375 TPS2376 TPS2377

SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

UVLO THRESHOLDS (NOMINAL) PACKAGE

(1)

MARKING

TYPE LOW HIGH SO-8 TSSOP-8

802.3af 30.5 V 39.3 V TPS2375D TPS2375PW 2375

-40 ° C to 85 ° C Adjustable 1.93 V 2.49 V TPS2376D TPS2376PW 2376 Legacy 30.5 V 35.1 V TPS2377D TPS2377PW 2377

(1) Add an R suffix to the device type for tape and reel.

over operating free-air temperature range (unless otherwise noted)

(1)

, voltages are referenced to V

(VSS)

TPS237x

VDD, RTN, DET, PG

(2)

-0.3 V to 100 V

Voltage ILIM, UVLO -0.3 V to 10 V

CLASS -0.3 V to 12 V RTN

(3)

0 to 515 mA

Current, sinking PG 0 to 5 mA

DET 0 to 1 mA CLASS 0 to 50 mA

Current, sourcing

ILIM 0 to 1 mA Human body model 2 kV

ESD Charged device model 500 V

System level (contact/air) at RJ-45

(4)

8/15 kV

Maximum junction temperature range Internally limited

stg

Storage temperature range -65 ° C to 150 ° C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds - Green Packages 260 ° C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds - Nongreen Packages 235 ° C

(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

(2) I

(RTN)

= 0

(3) SOA limited to V

(RTN)

= 80 V and I

(RTN)

= 515 mA.

(4) Surges applied to RJ-45 of Figure 1 between pins of RJ-45, and between pins and output voltage rails per EN61000-4-2, 1999.

POWER RATING

θJA(LOW-K) θJA(HIGH-K) (HIGH-K)

PACKAGE

° C/W ° C/W TA= 85 ° C

D (SO-8) 238 150 266

PW (TSSOP-8) 258.5 159 251

(1) Tested per JEDEC JESD51. High-K is a (2 signal – 2 plane) test board and low-K is a double sided

board with minimum pad area and natural convection.

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RECOMMENDED OPERATING CONDITIONS

ELECTRICAL CHARACTERISTICS

TPS2375 TPS2376 TPS2377

SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004

MIN MAX UNIT

VDD, PG, RTN 0 57 V

Input voltage range

UVLO 0 5 V Operating current range (sinking) RTN 0 350 mA Classification resistor

(1)

CLASS 255 4420 Ω

(ILIM)

Inrush limit program resistor

(1)

62.5 500 k Ω

Sinking current PG 0 2 mA

Operating junction temperature -40 125 ° C

Operating free–air temperature -40 85 ° C

(1) Voltage should not be eternally applied to CLASS and ILIM.

(VDD)

= 48 V, R

(DET)

= 24.9 k Ω , R

(CLASS)

= 255 Ω , R

(ILIM)

= 178 k Ω , and –40 ° C ≤ TJ≤ 125 ° C, unless otherwise noted. Positive

currents are into pins. V

(UVLO)

= 0 V for classification and V

(UVLO)

= 5 V otherwise for the TPS2376. Typical values are at 25 ° C.

All voltages are with respect to VSS unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

DETECTION

DET open, V

(VDD)

= V

(RTN)

= 1.9 V, measure

Offset current 0.3 3 µA

(VDD)

+ I

(RTN)

DET open, V

(VDD)

= V

(RTN)

= 10.1 V, measure

Sleep current 4 12 µA

(VDD)

+ I

(RTN)

DET leakage current V

(DET)

= V

(VDD)

= 57 V, measure I

(DET)

0.1 5 µA

(RTN)

= V

(VDD)

, V

(VDD)

= 1.4 V 53.7 56 58.3 µA

(DET)

= 24.9 k Ω ,

Detection current

measure I

(VDD)

+ I

(RTN)

(VDD)

= 10.1 V 395 410 417 µA

(DET)

CLASSIFICATION

(CLASS)

= 4420 Ω , 13 ≤ V

(VDD)

≤ 21 V 2.2 2.4 2.8

(CLASS)

= 953 Ω , 13 ≤ V

(VDD)

≤ 21 V 10.3 10.6 11.3

(CLASS)

Classification current

(1)

(CLASS)

= 549 Ω , 13 ≤ V

(VDD)

≤ 21 V 17.7 18.3 19.5 mA

(CLASS)

= 357 Ω , 13 ≤ V

(VDD)

≤ 21 V 27.1 28.0 29.5

(CLASS)

= 255 Ω , 13 ≤ V

(VDD)

≤ 21 V 38.0 39.4 41.2

(CL_ON)

Classification lower threshold Regulator turns on, V

(VDD)

rising 10.2 11.3 13.0 V

(CU_OFF)

Regulator turns off, V

(VDD)

rising 21 21.9 23 V

Classification upper threshold

(CU_H)

Hysteresis 0.5 0.78 1 V

Leakage current V

(CLASS)

= 0 V, V

(VDD)

= 57 V 1 µA

PASS DEVICE

DS(on)

On resistance I

(RTN)

= 300 mA 0.58 1.0 Ω

(VDD)

= V

(RTN)

= 30 V, 15

Leakage current µA

(UVLO)

= 0 V (TPS2376)

Current limit V

(RTN)

= 1 V 405 461 515 mA

(LIM)

Inrush limit V

(RTN)

= 2 V, R

(ILIM)

= 178 k Ω 100 130 180 mA

(RTN)

falling, R

(ILIM)

= 178 k Ω , inrush 85% 91% 100%

Inrush current termination

(2)

state → normal operation R

(ILIM)

= 69.8 k Ω , V

(RTN-VSS)

= 5 V, 15 25

Current rise time into inrush I

(RTN)

= 30 mA → 300 mA, V

(VDD)

increasing µs

past upper UVLO Apply load ∞ Ω → 20 Ω , time measured to 2 2.5

Current limit response time µs

(RTN)

= 45 mA

Leakage current, ILIM V

(VDD)

= 15 V, V

(UVLO)

= 0 V 1 µA

(1) Classification is tested with exact resistor values. A 1% tolerance classification resistor assures compliance with IEEE 802.3af limits. (2) This parameter specifies the RTN current value, as a percentage of the steady state inrush current, below which it must fall to make PG

assert (open-drain).

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TPS2375 TPS2376 TPS2377

SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004

ELECTRICAL CHARACTERISTICS (continued)

(VDD)

= 48 V, R

(DET)

= 24.9 k Ω , R

(CLASS)

= 255 Ω , R

(ILIM)

= 178 k Ω , and –40 ° C ≤ TJ≤ 125 ° C, unless otherwise noted. Positive

currents are into pins. V

(UVLO)

= 0 V for classification and V

(UVLO)

= 5 V otherwise for the TPS2376. Typical values are at 25 ° C.

All voltages are with respect to VSS unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Latchoff voltage threshold rising V

(RTN)

rising 9.5 10.0 10.5 V

PG deglitch Delay rising and falling PG 75 150 225 µs

(PG)

= 2 mA, V

(RTN)

= 34 V, 0.12 0.4

(VDD)

= 38 V, V

(RTN)

falling

Output low voltage

(PG)

= 2 mA, V

(RTN)

= 0 V, V

(VDD)

= 25 V, for 0.12 0.4

TPS2376 V

(UVLO)

= 0 V

Leakage current V

(PG)

= 57 V, V

(RTN)

= 0 V 0.1 1 µA

UVLO

(UVLO_R)

(VDD)

rising 38.4 39.3 40.4

(UVLO_F)

TPS2375 Voltage at VDD V

(VDD)

falling 29.6 30.5 31.5 V Hysteresis 8.3 8.8 9.1 V

(VDD)

rising 2.43 2.49 2.57

TPS2376 Voltage at UVLO V

(VDD)

falling 1.87 1.93 1.98 V Hysteresis 0.53 0.56 0.58 V

(VDD)

rising 34.1 35.1 36.0

TPS2377 Voltage at VDD V

(VDD)

falling 29.7 30.5 31.4 V Hysteresis 4.3 4.5 4.8

TPS2376 Input leakage, UVLO V

(UVLO)

= 0 V to 5 V -1 1 µA

THERMAL SHUTDOWN

Shutdown temperature Temperature rising 135 ° C Hysteresis 20 ° C

BIAS CURRENT

Operating current I

(VDD)

240 450 µA

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DEVICE INFORMATION

−

10 V

Regulator

Thermal Shutdown,

Counter, and Latch

−

12 V

22 V

1.5 V

& 10 V

2.5 V

−

VDD

RTN

45 mV

CLASS

DET

Current

Limit Amp.

UVLO

Comp.

Delay

− +

0 = Inrush

0 = Fault

1 = Limiting

PG Comparator

Detection

Comparator

Classification

Comparator

UVLO

’76 Only

−

2.5 V

ILIM

1:1

VSS

See

Note

Note: For The TPS2376, The UVLO Comparator

Connects To The UVLO Pin And Not The UVLO

Divider.

Current

Mirror

1 kOhms

0.08 Ohms

150 uS

TPS2375 TPS2376 TPS2377

SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004

FUNCTIONAL BLOCK DIAGRAM

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Detailed Pin Description

(LIM)



25000

(ILIM)

(1)

TPS2375 TPS2376 TPS2377

SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004

DEVICE INFORMATION (continued)

TERMINAL FUNCTIONS

PIN NUMBER

PIN NAME I/O DESCRIPTION

TPS2375/77 TPS2376

Connect a resistor from ILIM to VSS to set the start-up inrush current limit.

ILIM 1 1 O The equation for calculating the resistor is shown in the detailed pin

description section for ILIM. Connect a resistor from CLASS to VSS to set the classification of the

CLASS 2 2 O powered device (PD). The IEEE classification levels and corresponding

resistor values are shown in Table 1 . Connect a 24.9-k Ω detection resistor from DET to VDD for a valid PD

DET 3 3 O

detection.

VSS 4 4 I Return line on the source side of the TPS2375 from the PSE.

Switched output side return line used as the low-side reference for the

RTN 5 5 O

TPS2375 load.

PG 6 6 O Open-drain, power-good output; active high.

Used only on the TPS2376. Connect a resistor divider from VDD to VSS to

UVLO - 7 I

implement the adjustable UVLO feature of the TPS2376. NC 7 - No connection VDD 8 8 I Positive line from the rectified PSE provided input.

The following descriptions refer to the schematic of Figure 1 and the functional block diagram. ILIM: A resistor from this pin to VSS sets the inrush current limit per Equation 1 :

where ILIM is the desired inrush current value, in amperes, and R

(ILIM)

is the value of the programming resistor

from ILIM to VSS, in ohms. The practical limits on R

(ILIM)

are 62.5 k Ω to 500 k Ω . A value of 178 k Ω is

recommended for compatibility with legacy PSEs. Inrush current limiting prevents current drawn by the bulk capacitor from causing the line voltage to sag below

the lower UVLO threshold. Adjustable inrush current limiting allows the use of arbitrarily large capacitors and also accommodates legacy systems that require low inrush currents.

The ILIM pin must not be left open or shorted to VSS. CLASS: Classification is implemented by means of an external resistor, R

(CLASS)

, connected between CLASS

and VSS. The controller draws current from the input line through R

(CLASS)

when the input voltage lies between 13 V and 21 V. The classification currents specified in the electrical characteristics table include the bias current flowing into VDD and any RTN leakage current.

Table 1. CLASSIFICATION

CLASS PD POWER (W) R

(CLASS)

( Ω ) 802.3af LIMITS (mA) NOTE

0 0.44 – 12.95 4420 ± 1% 0 - 4 Default class 1 0.44 – 3.84 953 ± 1% 9 - 12 2 3.84 – 6.49 549 ± 1% 17 - 20 3 6.49 – 12.95 357 ± 1% 26 - 30 4 - 255 ± 1% 36 - 44 Reserved for future use

The CLASS pin must not be shorted to ground. DET: Connect a resistor, R

(DET)

, between DET and VDD. This resistor should equal 24.9 k Ω , ± 1% for most

applications. R

(DET)

is connected across the input line when V

(VDD)

lies between 1.4 V and 11.3 V, and is disconnected when the line voltage exceeds this range to conserve power. This voltage range has been chosen to allow detection with two silicon rectifiers between the controller and the RJ-45 connector.

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TYPICAL CHARACTERISTICS

11.0

11.1

11.2

11.3

−40 −20 0 20 40 60 80 100 120

Classification Turnon Voltage − V

TA − Free-Air Temperature − °C

0 1 2 3 4 5 6 7 8 9 10 11

TA = 125°C

TA = 25°C

TA = −40°C

(VDD)

− V

Current − Aµ

1 3 5 7 9 11

Specification Limits

(PI)

− V

Resistance − kΩ

TPS2375 TPS2376 TPS2377

SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004

VSS: This is the input supply negative rail that serves as a local ground to the TPS2375. RTN: This pin provides the switched negative power rail used by the downstream circuits. The operational and

inrush current limit control current into the pin. The PG circuit monitors the RTN voltage and also uses it as the return for the PG pin pulldown transistor. The internal MOSFET body diode clamps VSS to RTN when voltage is present between VDD and RTN and the PoE input is not present.

PG: This pin goes to a high resistance state when the internal MOSFET that feeds the RTN pin is enabled, and the device is not in inrush current limiting. In all other states except detection, the PG output is pulled to RTN by the internal open-drain transistor. Performance is assured with at least 4 V between VDD and RTN.

PG is an open-drain output; therefore, it may require a pullup resistor or other interface. UVLO: This pin is specific to the TPS2376; it is not internally connected on the TPS2375 and TPS2377. The

UVLO pin is used with an external resistor divider between VDD and VSS to set the upper and lower UVLO thresholds. The hysteresis, as measured as a percentage of the upper UVLO, is the same as the TPS2375.

The TPS2376 enables the output when V

(UVLO)

exceeds the upper UVLO threshold. When current begins to flow, VDD sags due to cable resistance and the dynamic resistance of the input diodes. The lower UVLO threshold must be below the lowest voltage that the input reaches.

The TPS2376 implements adjustable UVLO thresholds, but is otherwise functionally equivalent to the TPS2375. The TPS2375 offers fixed UVLO thresholds designed to maximize hysteresis while maintaining compatibility with the IEEE 802.3af standard. The TPS2377 offers fixed UVLO thresholds optimized for use with legacy PoE systems.

VDD: This is the positive input supply to the TPS2375, which is also common to downstream load circuits. This pin provides operating power and allows the controller to monitor the line voltage to determine the mode of operation.

Graphs over temperature are interpolations between the marked data points.

(VDD)

+ I

(RTN)

IN DETECTION PD DETECTION RESISTANCE CLASSIFICATION TURNON

vs VOLTAGE

(PI)

TEMPERATURE

Figure 2. Figure 3. Figure 4.

Page 8

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21.90

21.91

21.92

21.93

21.94

−40 −20 0 20 40 60 80 100 120

Classification Turnoff Voltage − V

TA − Free-Air Temperature − °C

0.100

0.150

0.200

0.250

0.300

0.350

22 27 32 37 42 47 52 57

VDD − V

(VDD)

− mA

TA = 125°C

TA = 25°C

TA = −40°C

0.4

0.5

0.6

0.7

0.8

0.9

−40 −20 0 20 40 60 80 100 120

Pass Device Resistance − Ω

TA − Free-Air Temperature − °C

39.2

39.3

39.4

39.5

−40 −20 0 20 40 60 80 100 120

− Free-Air Temperature − °C

VDD − V

2.484

2.485

2.486

2.487

2.488

2.489

−40 −20 0 20 40 60 80 100 120

(UVLO)

TA − Free-Air Temperature − °C

V − V

30.40

30.44

30.48

30.52

30.56

30.60

−40 −20 0 20 40 60 80 100 120

− Free-Air Temperature − °C

VDD − V

TPS2375 TPS2376 TPS2377

SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004

TYPICAL CHARACTERISTICS (continued)

Graphs over temperature are interpolations between the marked data points.

CLASSIFICATION TURNOFF I

(VDD)

CURRENT PASS DEVICE

VOLTAGE vs RESISTANCE

vs VDD vs

TEMPERATURE TEMPERATURE

Figure 5. Figure 6. Figure 7.

TPS2375 TPS2375 TPS2376

UVLO RISING UVLO FALLING UVLO RISING

vs vs vs

TEMPERATURE TEMPERATURE TEMPERATURE

Figure 8. Figure 9. Figure 10.

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30.45

30.50

30.55

30.60

30.65

−40 −20 0 20 40 60 80 100 120

− Free-Air Temperature − °C

VDD − V

34.95

35.00

35.05

35.10

35.15

35.20

−40 −20 0 20 40 60 80 100 120

− Free-Air Temperature − °C

VDD − V

1.923

1.924

1.925

1.926

1.927

1.928

1.929

−40 −20 0 20 40 60 80 100 120

− Free-Air Temperature − °C

(UVLO)

V − V

425

430

435

440

−40 −20 0 20 40 60 80 100 120

− Free-Air Temperature − °C

(RTN)

− mA

90.5

91.0

91.5

92.0

92.5

93.0

93.5

94.0

−40 −20 0 20 40 60 80 100 120

Percent of Inrush Limit Current

TA − Free-Air Temperature − °C

100

125

150

175

200

225

250

275

300

325

350

−40 −20 0 20 40 60 80 100 120

(ILIM)

− mA

TA − Free-Air Temperature − °C

75 kΩ

125 kΩ

178 kΩ

120

140

160

180

−40 −20 0 20 40 60 80 100 120

PG Deglitch Period −

sµ

TA − Free-Air Temperature − °C

TPS2375 TPS2376 TPS2377

SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004

TYPICAL CHARACTERISTICS (continued)

Graphs over temperature are interpolations between the marked data points.

TPS2376 TPS2377 TPS2377

UVLO FALLING UVLO RISING UVLO FALLING

vs vs vs

TEMPERATURE TEMPERATURE TEMPERATURE

Figure 11. Figure 12. Figure 13.

INRUSH STATE TERMINATION INRUSH CURRENT CURRENT LIMIT

THRESHOLD vs vs

vs TEMPERATURE TEMPERATURE

TEMPERATURE

Figure 14. Figure 15. Figure 16.

PG DEGLITCH PERIOD

TEMPERATURE

Figure 17.

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APPLICATION INFORMATION

OVERVIEW

Normal Operation

363020.514.510.12.7

Detection

Lower Limit

Detection

Upper Limit

Classification

Lower Limit

Classification

Upper Limit

Must Turn Off by −

Voltage Falling

Lower Limit −

Proper Operation

Must Turn On by−

Voltage Rising

Maximum Input

Voltage

Detect

Classify

Shut -

down

PI Voltage (V)

INTERNAL THRESHOLDS

TPS2375 TPS2376 TPS2377

SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004

The IEEE 802.3af specification defines a process for safely powering a PD over a cable, and then removing power if a PD is disconnected. The process proceeds through three operational states: detection, classification, and operation. The intent behind the process is to leave an unterminated cable unpowered while the PSE periodically checks for a plugged-in device; this is referred to as detection. The low power levels used during detection are unlikely to cause damage to devices not designed for PoE. If a valid PD signature is present, then the PSE may optionally inquire how much power the PD requires; this is referred to as classification. The PD may return a default full-power signature, or one of four other choices. Knowing the power demand of each PD allows the PSE to intelligently allocate power between PDs, and also to protect itself against overload. The PSE powers up a valid PD, and then monitors its output for overloads. The maintain power signature (MPS) is presented by the powered PD to assure the PSE that it is there. The PSE monitors its output for the MPS to see if the PD is removed, and turns the port off, if it loses the MPS. Loss of MPS returns the PSE to the initial state of detection. Figure 18 shows the operational states as a function of PD input voltage range.

The PD input is typically an RJ-45 (8-pin) connector, referred to as the power interface (PI). PD input requirements differ from PSE output requirements to account for voltage drops in the cable and margin. The specification uses a cable resistance of 20 Ω to derive the voltage limits at the PD from the PSE output requirements. Although the standard specifies an output power of 15.4 W at the PSE output, there is only

12.95 W available at the input of the PD due to the worst case power loss in the cable. The PSE can apply voltage either between the RX and TX pairs, or between the two spare pairs as shown in

Figure 1 . The applied voltage can be of either polarity. The PSE cannot apply voltage to both paths at the same

time. The PD uses input diode bridges to accept power from any of the possible PSE configurations. The voltage drops associated with the input bridges cause a difference between the IEEE 802.3af limits at the PI and the TPS2375 specifications.

The PSE is required to current limit between 350 mA and 400 mA during normal operation, and it must disconnect the PD if it draws this current for more than 75 ms. The PSE may set lower output current limits based on the PD advertised power requirements, as discussed below.

The following discussion is intended as an aid in understanding the operation of the TPS2375, but not as a substitute for the actual IEEE 802.3af standard. Standards change and should always be referenced when making design decisions.

Figure 18. IEEE 802.3 PD Limits

In order to implement the PoE functionality as shown in Figure 18 , the TPS2375 has a number of internal comparators with hysteresis for stable switching between the various states. Figure 19 relates the parameters in the Electrical Characteristics section to the PoE states. The mode labeled idle between classification and detection implies that the DET, CLASS, PG, and RTN pins are all high impedance.

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Operational Mode

Detection

Classification

PD Powered

Idle

1.4V

(CL_ON)

(CU_OFF)

(CU_H)

(UVLO_F)

(UVLO_R)

(VDD)

DETECTION

CLASSIFICATION

TPS2375 TPS2376 TPS2377

SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004

APPLICATION INFORMATION (continued)

Figure 19. Threshold Voltages

This feature of IEEE 802.3af eliminates powering and potentially damaging Ethernet devices not intended for application of 48 V. When a voltage in the range of 2.7 V to 10.1 V is applied to the PI, an incremental resistance of 25 k Ω signals the PSE that the PD is capable of accepting power. A PD that is capable of accepting power, but is not ready, may present an incorrect signature intentionally. The incremental resistance is measured by applying two different voltages to the PI and measuring the current it draws. These two test voltages must be within the specified range and be at least 1 V apart. The incremental resistance equals the difference between the voltages divided by the difference between the currents. The allowed range of resistance is 23.75 k Ω to

26.25 k Ω . The TPS2375 is in detection mode whenever the supply voltage is below the lower classification threshold. The

TPS2375 draws a minimum of bias power in this condition, while PG and RTN are high impedance and the circuits associated with ILIM and CLASS are disabled. The DET pin is pulled to ground during detection. Current flowing through R

(DET)

to VSS (Figure 1 ) produces the detection signature. For most applications, a 24.9-k Ω , 1%,

resistor is recommended. R

(DET)

can be a small, low-power resistor because it only sees a stress of about 5 mW. When the input voltage rises above the 11.3 V lower classification comparator threshold, the DET pin goes to an open-drain condition to conserve power.

The input diode bridge incremental resistance can be hundreds of ohms at the low currents seen at 2.7 V on the PI. The bridge resistance is in series with R

(DET)

and increases the total resistance seen by the PSE. This varys with the type of diode selected by the designer, and it is not usually specified on the diode data sheet. The value of R

(DET)

may be adjusted downwards to accommodate a particular diode type.

Once the PSE has detected a PD, it may optionally classify the PD. This process allows a PSE to determine the PD power requirements in order to allot only as much power as necessary from its fixed input power source. This allows the PSE to power the maximum number of PDs from a particular power budget. This step is optional because some PSEs can afford to allot the full power to every powered port.

The classification process applies a voltage between 14.5 V and 20.5 V to the input of the PD, which in turn draws a fixed current set by R

(CLASS)

. The PSE measures the PD current to determine which of the five available classes (Table 1 ) that the PD is signalling. The total current drawn from the PSE during classification is the sum of bias currents and current through R

(CLASS)

. The TPS2375 disconnects R

(CLASS)

at voltages above the

classification range to avoid excessive power dissipation (Figure 18 and Figure 19 ). The value of R

(CLASS)

should be chosen from the values listed in Table 1 based on the average power requirements of the PD. The power rating of this resistor should be chosen so that it is not overstressed for the required 75-ms classification period, during which 10 V is applied. The PD could be in classification for extended periods during bench test conditions, or if an auxiliary power source with voltage within the classification range is connected to the PD front end. Thermal protection may activate and turn classification off if it continues for more than 75 ms, but the design must not rely on this function to protect the resistor.

Page 12

www.ti.com

UNDERVOLTAGE LOCKOUT (UVLO)

PROGRAMMABLE INRUSH CURRENT LIMIT AND FIXED OPERATIONAL CURRENT LIMIT

TPS2375 TPS2376 TPS2377

SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004

APPLICATION INFORMATION (continued)

The TPS2375 incorporates an undervoltage lockout (UVLO) circuit that monitors line voltage to determine when to apply power to the downstream load and allow the PD to power up. The IEEE 802.3af specification dictates a maximum PD turnon voltage of 42 V and a minimum turnoff voltage of 30 V (Figure 19 ). The IEEE 802.3af standard assumes an 8-V drop in the cabling based on a 20- Ω feed resistance and a 400-mA maximum inrush limit. Because the minimum PSE output voltage is 44 V, the PD must continue to operate properly with input voltages as low as 36 V. The TPS2375 UVLO limits are designed to meet the turnon, turnoff, and hysteresis requirements.

Various legacy PSE systems in the field do not meet the minimum output voltage of 44 V. The TPS2377 UVLO limits are designed to support these systems with a lower turnon voltage and smaller hysteresis. Although the TPS2377 works with compliant PSEs, it could potentially exhibit startup instabilities if the PSE output voltage rises slowly. The TPS2375 is recommended for applications with compliant PSEs.

In order to provide flexibility for noncompliant designs, the TPS2376 allows the designer to program the turnon thresholds with a resistor divider. The hysteresis of the TPS2376, measured as a percentage of the turnon voltage, is similar to that of the TPS2375. To use the TPS2376, connect a resistor divider between VDD and VSS with the tap connected to the UVLO pin. The total divider resistance appears in parallel with the R

(DET)

, and the combination of the two should equal 24.9 k Ω . The divider ratio should be chosen to obtain 2.5 V at the UVLO pin when V

(VDD)

is at the desired turnon voltage.

The TPS2375 uses the UVLO function to control the load through an onboard MOSFET switch. Figure 19 graphically shows the relationships of the UVLO thresholds defined in the Electrical Characteristics section to the TPS2375 operational states.

Inrush limiting is beneficial for a number of reasons. First, it provides a mechanism to keep the inrush current below the 400 mA, 50 ms, maximum inrush allowed by the standard. Second, by reducing the level of the current limit below the PSE operational limit, which can be as low as the classification power divided by the PSE voltage, it allows an arbitrarily large bulk capacitor to be charged. Third, some legacy PSEs may not tolerate large inrush currents while powering their outputs up.

The TPS2375 operational current limit protects the internal power switch from instantaneous output faults and current surges. The minimum operational current limit level of 405 mA is above the maximum PSE output current limit of 400 mA. This current limit allows the PD to draw the maximum available power and also allows the PSE to detect fault conditions.

The TPS2375 incorporates a state machine that controls the inrush and operational current limit states. When V

(VDD)

is below the lower UVLO threshold, the current limit state machine is reset. In this condition, the RTN pin

is high impedance, and at V

(VDD)

once the output capacitor is discharged by the downstream circuits. When

(VDD)

rises above the UVLO turnon threshold, the TPS2375 enables the internal power MOSFET with the current limit set to the programmed inrush value. The load capacitor charges and the RTN pin voltage falls from V

(VDD)

to nearly V

(VSS)

. Once the inrush current falls about 10% below the programmed limit, the current limit switches to the internal 450-mA operational level after a 150- µ s delay. This switchover can be seen in the operation of PG, which goes active (open drain) after inrush terminates as seen in Figure 1 . The internal power MOSFET is disabled if the input voltage drops below the lower UVLO threshold.

When in the operating current-limit state, a fault on the output or a large input transient can cause the internal MOSFET to limit current. The RTN voltage rises above its normal operating level of less than 0.5 V while in current-limit state. If V

(RTN)

rises above 10 V for more than 150 µ s, the MOSFET is latched off. The PD input voltage must drop below the lower UVLO threshold to clear this latch. If the RTN voltage does not exceed 10 V while in current-limit state, but the condition persists long enough to overheat the TPS2375, the thermal limit circuit activates, as described in the thermal protection section.

Practical values of R

(ILIM)

lie between 62.5 k Ω and 500 k Ω . The pin must not be left open. An inrush level of

140 mA, set by an R

(ILIM)

of 178 k Ω , should be used with TPS2377 applications for compatibility with legacy

systems. This same inrush current level suffices for many TPS2375 applications.

Page 13

www.ti.com

MAINTAIN POWER SIGNATURE

POWER GOOD

THERMAL PROTECTION

TPS2375 TPS2376 TPS2377

SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004

APPLICATION INFORMATION (continued)

The inrush limit, the bulk capacitor size, and the downstream dc/dc converter startup method must be chosen so that the converter input current does not exceed the inrush current limit while it is active. This can be achieved by using the PG output to enable the downstream converter after inrush finishes, by delaying the converter startup until inrush finishes, or by increasing the value of the inrush current limit.

Once a valid PD has been detected and powered, the PSE uses the maintain power signature (MPS) to determine when to remove power from the PI. The PSE removes power from that output port if it detects loss of MPS for 300 ms or more. A valid MPS requires the PD to draw at least 10 mA and also have an ac impedance less than 26.25 k Ω in parallel with 0.05 µF. TI's reference designs meet the requirements necessary to maintain power.

The TPS2375 includes a power-good circuit that can be used to signal the PD circuitry that the load capacitor is fully charged. This pin is intended for use as an enable signal for downstream circuitry. If the converter tries to start up while inrush is active, and draws a current equal to the inrush limit, a latchup condition occurs in which the PD never successfully starts. Using the PG pin is the safest way to assure that there are no undesired interactions between the inrush limit, the converter startup characteristic, and the size of the bulk capacitor.

The PG pin goes to an open-drain state approximately 150 µs after the inrush current falls 10% below the regulated value. PG pulldown current is only assured when the voltage difference between VDD and RTN exceeds 4 V. This is not a limiting factor because the dc/dc converter should not be able to run from 4 V. The PG output is pulled to RTN whenever the MOSFET is disabled or is in inrush current limiting.

Referencing PG to RTN simplifies the interface to the downstream dc/dc converter or other circuit because it is referenced to RTN, not VSS. Care must be used in interfacing the PG pin to the downstream circuits. The pullup to VDD shown in Figure 1 may not be appropriate for a particular dc/dc converter interface. The PG pin connects to an internal open-drain, 100-V transistor capable of sinking 2 mA to a voltage below 0.4 V. The PG pin can be left open if it is not used.

The controller may overheat after operation in current-limit state or classification for an extended period of time, or if the ambient temperature becomes excessive. The TPS2375 protects itself by disabling the RTN and CLASS pins when the internal die temperature reaches about 140 ° C. It automatically restarts when the die temperature has fallen approximately 20 ° C. If this cycle occurs eight times, then the device latches off until the supply voltage drops below the lower classification threshold. This feature prevents the part from operating indefinitely in fault, and ensures that the PSE recognizes the fault condition when using dc MPS. Thermal protection is active whenever the TPS2375 is not in detection.

Figure 20 shows how the TPS2375 responds when it is enabled into a short. The TPS2375 starts in the inrush

current-limit state when the input voltage exceeds the upper UVLO limit. A power dissipation of over 5 W heats the die from 25 ° C to 140 ° C in approximately 400 ms. The TPS2375 then shuts down until the die temperature drops to about 120 ° C, which occurs in about 20 ms. This process repeats eight times before the TPS2375 latches off. The PG pin is high because RTN is tied to VDD.

Page 14

www.ti.com

Ch1: VDD @ 50 V/div

CH2: RTN @ 50 V/div

Iin @ 100 mA/div

(PI)

= 44 V , R

(ILIM)

= 178 k

CH3: V

(PG)

@ 50 V/div

POWER SYSTEM DESIGN

AUXILIARY POWER SOURCE ORING

TPS2375 TPS2376 TPS2377

SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004

APPLICATION INFORMATION (continued)

Figure 20. TPS2375 Started Into Short

The PSE is a power and current limited source, which imposes certain constraints on the PD power supply design. DC/DC converters have both a constant input power characteristic that causes them to draw high currents at low voltage, and they tend to go to a full input power mode during start-up that is often 25% or more above their rated power. Improper design of the power system can cause the PD to not start up with all combinations of Ethernet lines and PSE sources.

The following guidelines should be used:

1. Set the TPS2375 inrush to a moderate value as previously discussed.

2. Hold the dc/dc converter off during inrush as previously discussed.

3. The converter should have a softstart that keeps the peak input start-up current below 400 mA, and preferably only a modest amount over the operating current, with a 44-V PSE source and a 20- Ω loop.

4. If step 3 cannot be met, the bulk input capacitor should not discharge more than 8 V during converter start up from a 400-mA limited, 44-V source with a 20- Ω line. Start-up must be completed in less than 50 mS

Step 4 requires a balance between the converter output capacitance, load, and input bulk capacitance. While there are some cases which may not require all these measures, such as a 1-W PD with minimal converter output capacitance, it is always a good practice to follow them.

Many PoE capable devices are designed to operate from either a wall adapter or PoE power. A local power solution adds cost and complexity, but allows a product to be used regardless of PoE availability. Attempting to create solutions where the two power sources coexist in a specific controlled manner results in additional complexity, and is not generally recommended. Figure 21 demonstrates three methods of diode ORing external power into a PD. Option 1 inserts power on the output side of the PoE power conversion. Option 2 inserts power on the TPS2375 output. Option 3 applies power to the TPS2375 input. Each of these options has advantages and disadvantages. The wall adapter must meet a minimum 1500-Vac dielectric withstand test voltage to the ac input power and to ground for options 2 and 3.

Page 15

www.ti.com

TPS237X

SMAJ58A

(DET)

(CLASS)

VDDVSS

CLASS

DET

RTN

Main

DC/DC

Converter

Output

(ILIM)

RJ−45

Option 1

ILIM

DC/DC

Converter

UCC3809

UCC3813

Optional

Regulator

Option 2

Option 3

A Full Wave Bridge Gives Flexibility To Use Supply With Either Polarity

For Option 2, The Capacitor Must Be Right At The Output To Control The Transients.

Auxiliary

Power

Input

Use only

one option

See TI Document SL VR030 For A Typical Application Circuit.

~ ~

−

~ ~

−

0.1 µF

22 µF

Inserting a Diode in This Location With Option 2, Allows PoE T o Start With Aux Power Present.

TPS2375 TPS2376 TPS2377

SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004

APPLICATION INFORMATION (continued)

Figure 21. Auxiliary Power ORing

Option 1 consists of ORing power to the output of the PoE dc/dc converter. This option is preferred in cases where PoE is added to an existing design that uses a low-voltage wall adapter. The relatively large PD capacitance reduces the potential for harmful transients when the adapter is plugged in. The wall adapter output may be grounded if the PD incorporates an isolated converter. This solution requires two separate regulators, but low-voltage adapters are readily available. The PoE power can be given priority by setting its output voltage above that from the auxiliary source.

Option 2 has the benefits that the adapter voltage may be lower than the TPS2375 UVLO, and that the bulk capacitor shown can control voltage transients caused by plugging an adapter in. The capacitor size and location are chosen to control the amount of ringing that can occur on this node, which can be affected by additional filtering components specific to a dc/dc converter design. The optional diode blocks the adapter voltage from reverse biasing the input, and allows a PoE source to apply power provided that the PSE output voltage is greater than the adapter voltage. The penalty of the diode is an additional power loss when running from PSE power. The PSE may not be able to detect and start powering without the diode. This means that the adapter may continue to power the PD until removed. Auxiliary voltage sources can be selected to be above or below the PoE operational voltage range. If automatic PoE precedence is desired when using the low-voltage auxiliary source option, make sure that the TPS2375 inrush program limit is set higher than the maximum converter input current at its lowest operating voltage. It is difficult to use PG with the low-voltage auxiliary source because the converter must operate during a condition when the TPS2375 would normally disable it. Circuits may be designed to force operation from one source or the other depending on the desired operation and the auxiliary source voltage chosen. However, they are not recommended because they increase complexity and thus cost.

Option 3 inserts the power before the TPS2375. It is necessary for the adapter to meet the TPS2375 UVLO turnon requirement and to limit the maximum voltage to 57 V. This option provides a valid power-good signal and simplifies power priority issues. The disadvantage of this method is that it is the most likely to cause transient voltage problems. Plugging a powered adapter in applies a step input voltage to a node that has little capacitance to control the dv/dt and voltage ringing. If the wall mount supply applies power to the PD before the PSE, it prevents the PSE from detecting the PD. If the PSE is already powering the PD when the auxiliary source is plugged in, priority is given to the higher supply voltage.

Page 16

www.ti.com

ESD

EXTERNAL COMPONENTS

Transformer

Input Diodes or Diode Bridges

Input Capacitor

Load Capacitor

C 

(PD)

 180

10 mA

(2)

TPS2375 TPS2376 TPS2377

SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004

APPLICATION INFORMATION (continued)

The TPS2375 has been tested using the surge of EN61000-4-2 in an evaluation module (EVM) using the circuit in Figure 1 . The levels used were 8-kV contact discharge and 15-kV air discharge. Surges were applied between the RJ-45 and the dc EVM outputs, and between an auxiliary power input jack and the dc outputs. No failures were observed.

ESD requirements for a unit that incorporates the TPS2375 have much broader scope and operational implications than those used in TI’s testing. Unit level requirements should not be confused with EVM testing that only validated the TPS2375.

Nodes on an Ethernet network commonly interface to the outside world via an isolation transformer per IEEE

802.3 requirements, see Figure 1 . For powered devices, the isolation transformer must include a center tap on the media (cable) side. Proper termination is required around the transformer to provide correct impedance matching and to avoid radiated and conducted emissions. Transformers must be specifically rated to work with the Ethernet chipset, and the IEEE 802.3af standard.

The IEEE 802.3af requires the PD to accept power on either set of input pairs in either polarity. This requirement is satisfied by using two full-wave input bridge rectifiers as shown in Figure 1 . Silicon p-n diodes with a 1-A or

1.5-A rating and a minimum breakdown of 100 V are recommended. Diodes exhibit large dynamic resistance under low-current operating conditions such as in detection. The diodes should be tested for their behavior under this condition. The diode forward drops must be less than 1.5 V at 500 µA and at the lowest operating temperature.

The IEEE 802.3af requires a PD input capacitance between 0.05 µF and 0.12 µ F during detection. This capacitor should be located directly adjacent to the TPS2375 as shown in Figure 1 . A 100-V, 10%, X7R ceramic capacitor meets the specification over a wide temperature range.

The IEEE 802.3af specification requires that the PD maintain a minimum load capacitance of 5 µ F. It is permissible to have a much larger load capacitor, and the TPS2375 can charge in excess of 470 µF before thermal issues become a problem. However, if the load capacitor is too large, the PD design may violate IEEE

802.3af requirements. If the load capacitor is too large, there can be a problem with inadvertent power shutdown by the PSE caused by

failure to meet the MPS. This is caused by having a long input current dropout due to a drop in input voltage with a large capacitance-to-load ratio. The standard gives Equation 2 :

where C is the bulk capacitance in µ F and I

(PD)

is the PD load current in mA.

A particular design may have a tendency to cause ringing at the RTN pin during startup, inadvertent hot-plugs of the PoE input, or plugging in a wall adapter. It is recommended that a minimum value of 1 µF be used at the output of the TPS2375 if downstream filtering prevents placing the larger bulk capacitor right on the output. When using ORing option 2, it is recommended that a large capacitor such as a 22 µ F be placed across the TPS2375 output.

Page 17

www.ti.com

Transient Suppressor

Layout

TPS2375 TPS2376 TPS2377

SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004

APPLICATION INFORMATION (continued)

Voltage transients on the TPS2375 can be caused by connecting or disconnecting the PD, or by other environmental conditions like ESD. The TPS2375 is specified to operate with absolute maximum voltages V

(VDD-VSS)

and V

(RTN-VSS)

of 100 V. A transient voltage suppressor, such as the SMAJ58A, should be installed after the bridge and across the TPS2375 input as shown in Figure 1 . Various configurations of output filters and the insertion of local power sources across either the TPS2375 input or output have the potential to cause stresses outside the absolute maximum ratings of the device. Designers should be aware of this possibility and account for it in their circuit designs. For example, use adequate capacitance across the output to limit the magnitude of voltage ringing caused by downstream filters. Plugging an external power source across the output may cause ESD-like events. Some form of protection should be considered based on a study of the specific waveforms seen in an application circuit.

The layout of the PoE front end must use good practices for power and EMI/ESD. A basic set of recommendations include:

1. The parts placement must be driven by the power flow in a point-to-point manner such as RJ-45 → Ethernet transformer → diode bridges → TVS and 0.1- µ F capacitor → TPS2375 → output capacitor.

2. There should not be any crossovers of signals from one part of the flow to another.

3. All leads should be as short as possible with wide power traces and paired signal and return.

4. Spacing consistent with safety standards like IEC60950 must be observed between the 48-V input voltage rails and between the input and an isolated converter output.

5. The TPS2375 should be over a local ground plane or fill area referenced to VSS to aid high-speed operation.

6. Large SMT component pads should be used on power dissipating devices such as the diodes and the TPS2375.

Use of added copper on local power and ground to help the PCB spread and dissipate the heat is recommended. Pin 4 of the TPS2375 has the lowest thermal resistance to the die.

Page 18

PACKAGING INFORMATION

Orderable Device Status

(1)

Package

Type

Package

Drawing

Pins Package

Qty

Eco Plan

(2)

Lead/Ball Finish MSL Peak Temp

(3)

TPS2375D ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2375DG4 ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2375DR ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2375DRG4 ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2375PW ACTIVE TSSOP PW 8 150 TBD CU NIPDAU Level-1-220C-UNLIM

TPS2375PWR ACTIVE TSSOP PW 8 2000 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2375PWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2376D ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2376DR ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2376DRG4 ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2376PW ACTIVE TSSOP PW 8 150 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2376PWR ACTIVE TSSOP PW 8 2000 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2376PWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2377D ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2377DR ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2377DRG4 ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2377PW ACTIVE TSSOP PW 8 150 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2377PWR ACTIVE TSSOP PW 8 2000 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2377PWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

(1)

The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in

a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.

(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check

http://www.ti.com/productcontent for the latest availability information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements

PACKAGE OPTION ADDENDUM

www.ti.com

8-Aug-2005

Addendum-Page 1

Page 19

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3)

MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder

temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

PACKAGE OPTION ADDENDUM

www.ti.com

8-Aug-2005

Addendum-Page 2

Page 20

PACKAGING INFORMATION

Orderable Device Status

(1)

Package

Type

Package

Drawing

Pins Package

Qty

Eco Plan

(2)

Lead/Ball Finish MSL Peak Temp

(3)

TPS2375D ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2375DG4 ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2375DR ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2375DRG4 ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2375PW ACTIVE TSSOP PW 8 150 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2375PWG4 ACTIVE TSSOP PW 8 150 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2375PWR ACTIVE TSSOP PW 8 2000 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2375PWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2376D ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2376DG4 ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2376DR ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2376DRG4 ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2376PW ACTIVE TSSOP PW 8 150 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2376PWG4 ACTIVE TSSOP PW 8 150 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2376PWR ACTIVE TSSOP PW 8 2000 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2376PWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2377D ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2377DG4 ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2377DR ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2377DRG4 ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2377PW ACTIVE TSSOP PW 8 150 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2377PWG4 ACTIVE TSSOP PW 8 150 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2377PWR ACTIVE TSSOP PW 8 2000 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS2377PWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

(1)

The marketing status values are defined as follows:

PACKAGE OPTION ADDENDUM

www.ti.com

6-Dec-2006

Addendum-Page 1

Page 21

a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.

(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check

http://www.ti.com/productcontent for the latest availability information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements

for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3)

MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder

temperature.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

PACKAGE OPTION ADDENDUM

www.ti.com

6-Dec-2006

Addendum-Page 2

Page 22

TAPE AND REEL INFORMATION

PACKAGE MATERIALS INFORMATION

www.ti.com

2-Jul-2007

Pack Materials-Page 1

Page 23

Device Package Pins Site Reel

Diameter

(mm)

Reel

Width

(mm)

A0 (mm) B0 (mm) K0 (mm) P1

(mm)W(mm)

Pin1

Quadrant

TPS2375DR D 8 TAI 330 12 6.4 5.2 2.1 8 12 Q1

TPS2375PWR PW 8 MLA 330 12 7.0 3.6 1.6 8 12 Q1

TPS2376DR D 8 TAI 330 12 6.4 5.2 2.1 8 12 Q1

TPS2376PWR PW 8 MLA 330 12 7.0 3.6 1.6 8 12 Q1

TPS2377DR D 8 TAI 330 12 6.4 5.2 2.1 8 12 Q1

TPS2377PWR PW 8 MLA 330 12 7.0 3.6 1.6 8 12 Q1

TAPE AND REEL BOX INFORMATION

Device Package Pins Site Length (mm) Width (mm) Height (mm)

TPS2375DR D 8 TAI 346.0 346.0 29.0

TPS2375PWR PW 8 MLA 346.0 346.0 29.0

TPS2376DR D 8 TAI 346.0 346.0 29.0

TPS2376PWR PW 8 MLA 346.0 346.0 29.0

TPS2377DR D 8 TAI 346.0 346.0 29.0

TPS2377PWR PW 8 MLA 346.0 346.0 29.0

PACKAGE MATERIALS INFORMATION

www.ti.com

2-Jul-2007

Pack Materials-Page 2

Page 24

PACKAGE MATERIALS INFORMATION

www.ti.com

2-Jul-2007

Pack Materials-Page 3

Page 25

Page 26

MECHANICAL DATA

MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

PW (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE

14 PINS SHOWN

0,65

0,10

0,25

0,50

0,75

0,15 NOM

Gage Plane

9,80

9,60

7,90

7,70

2016

6,60

6,40

4040064/F 01/97

0,30

6,60 6,20

0,19

4,30

4,50

0,15

1,20 MAX

5,10

4,90

3,10

2,90

A MAX

A MIN

DIM

PINS **

0,05

4,90

5,10

Seating Plane

0°–8°

NOTES: A. All linear dimensions are in millimeters.

B. This drawing is subject to change without notice. C. Body dimensions do not include mold flash or protrusion not to exceed 0,15. D. Falls within JEDEC MO-153

Page 27

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TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.

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Wireless www.ti.com/wireless

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265

Datasheet TPS2376PWRG4, TPS2376 Datasheet (Texas Instruments)

Specifications and Main Features

Frequently Asked Questions

User Manual