Datasheet TPCS8211 Datasheet (TOSHIBA)

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

TPCS8211

Lithium Ion Battery Applications

Notebook PC Applications

Portable Machines and Tools

· Small footprint due to small and thin package

· Low drain-source ON resistance: R

DS (ON)

· High forward transfer admittance: |Yfs| = 11 S (typ.)

· Low leakage current: I

· Enhancement-mode: V

= 10 µA (max) (VDS = 20 V)

DSS

= 0.5~1.2 V (VDS = 10 V, ID = 200 µA)

th

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage V

Drain-gate voltage (RGS = 20 kW) V

Gate-source voltage V

Drain current

Drain power dissipation (t = 10 s)

(Note 2a)

Drain power dissipation (t = 10 s)

(Note 2b)

Single pulse avalanche energy (Note 4)

Avalanche current IAR 6 A

Repetitive avalanche energy Single-device value at dual operation

Channel temperature Tch 150 °C

Storage temperature range T

(Ta ==== 25°C)

DC (Note 1) ID 6

Pulse (Note 1) I

Single-device operation (Note 3a)

Single-device value at dual operation (Note 3b)

Single-device operation (Note 3a)

Single-device value at dual operation (Note 3b)

(Note 2a, 3b, 5)

= 16 mΩ (typ.)

20 V

DSS

20 V

DGR

±12 V

GSS

24

DP

P

1.1

D (1)

P

0.75

D (2)

P

0.6

D (1)

0.35

P

D (2)

E

46.8 mJ

AS

E

0.075 mJ

AR

-55~150 °C

stg

A

W

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-3R1E

Weight: 0.035 g (typ.)

Circuit Configuration

8 7 6 5

1 2 3 4

Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

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Thermal Characteristics

Characteristics Symbol Max Unit

TPCS8211

Thermal resistance, channel to ambient (t = 10 s) (Note 2a)

Thermal resistance, channel to ambient (t = 10 s) (Note 2b)

Single-device operation

(Note 3a)

Single-device value at dual operation

(Note 3b)

Single-device operation

(Note 3a)

Single-device value at dual operation

(Note 3b)

R

th (ch-a) (1)

R

th (ch-a) (2)

R

th (ch-a) (1)

R

th (ch-a) (2)

114

°C/W

167

208

°C/W

357

Marking

(Note 6)

Type

S8211

※

Lot No.

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2:

a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 ´ 25.4 ´ 0.8 (Unit: mm)

FR-4

25.4 ´ 25.4 ´ 0.8 (Unit: mm)

(a) (b)

Note 3:

a) The power dissipation and thermal resistance values are shown for a single device

(During single-device operation, power is only applied to one device.).

b) The power dissipation and thermal resistance values are shown for a single device

(During dual operation, power is evenly applied to both devices.).

Note 4: V

= 16 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 W, IAR = 6 A

DD

Note 5: Repetitive rating; pulse width limited by max channel temperature.

Note 6: ○ on lower right of the marking indicates Pin 1.

※ Weekly code: (Three digits)

Week of manufacture (01 for first week of year, continues up to 52 or 53)

Year of manufacture (One low-order digits of calendar year)

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TPCS8211

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Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cut-OFF current I

Drain-source breakdown voltage

Gate threshold voltage Vth VDS = 10 V, ID = 200 mA 0.5 ¾ 1.2 V

Drain-source ON resistance R

Forward transfer admittance |Yfs| VDS = 10 V, ID = 3.0 A 5.5 11 ¾ S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr ¾ 6.4 ¾

Turn-ON time ton ¾ 22 ¾

Switching time

Fall time tf ¾ 10 ¾

Turn-OFF time t

Total gate charge (gate-source plus gate-drain)

Gate-source charge 1 Q

Gate-drain (“miller”) charge Qgd

(Ta ==== 25°C)

VGS = ±10 V, VDS = 0 V ¾ ¾ ±10 mA

GSS

VDS = 20 V, VGS = 0 V ¾ ¾ 10 mA

DSS

V

(BR) DSSID

V

(BR) DSXID

DS (ON)

¾ 1590 ¾

iss

¾ 180 ¾

rss

oss

off

Q

¾ 20 ¾

g

gs1

= 10 mA, VGS = 0 V 20 ¾ ¾

= 10 mA, VGS = -12 V 8 ¾ ¾

VGS = 2.0 V, ID = 4.2 A ¾ 26 45

VGS = 2.5 V, ID = 4.2 A ¾ 21 29

V

= 4.0 V, ID = 4.8 A ¾ 16 24

GS

= 10 V, VGS = 0 V, f = 1 MHz

V

DS

¾ 200 ¾

5 V

V

GS

0 V

1%, tw = 10 ms

Duty

~

V

16 V, V

-

DD

¾ 3.5 ¾

ID = 3 A

4.7 W

~

V

10 V

-

DD

= 5 V, ID = 6 A

GS

V

OUT

= 3.3 W

L

R

¾ 42 ¾

¾ 4.5 ¾

Source-Drain Ratings and Characteristics

(Ta ==== 25°C)

V

mW

pF

ns

nC

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) I

Forward voltage (diode) V

¾ ¾ ¾ 24 A

DRP

IDR = 6 A, VGS = 0 V ¾ ¾ -1.2 V

DSF

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TPCS8211

5

4, 5

2

4

(A)

D

3

2

Drain current I

1

0

0 0.4 0.8 1.2 1.6 2.0

Drain-source voltage VDS (V)

10

8

(A)

D

6

4

Drain current I

2

100

25

0

0 1 2 3 4 5

Gate-source voltage VGS (V)

100

ï (S)

fs

10

Forward transfer admittance ïY

1

0.1 1 10

Drain current ID (A) Drain current ID (A)

– VDS

I

D

1.7

– VGS

I

D

Ta = -55°C

|Y

fs

Ta = -55°C

| – ID

Common source

Ta = 25°C

Pulse test

VGS = 1.4 V

Common source

VDS = 10 V

Pulse test

25

100

Common source

VDS = 10 V

Pulse test

1.6

1.5

– VDS

I

1.7

D

Common source

Ta = 25°C

Pulse test

1.6

1.5

VGS = 1.4 V

10

(A)

D

Drain current I

4, 5

2

1.8

8

6

4

2

0

0123 4 5

Drain-source voltage VDS (V)

V

– VGS

0.8

0.6

(V)

DS

0.4

0.2

Drain-source voltage V

0

0 2 4 6 8 10

Gate-source voltage VGS (V)

DS

Common source

Ta = 25°C

Pulse test

1.5 3

ID = 12 A

6

DS (ON)

– ID

2.5

2

Common source

Ta = 25°C

Pulse test

100

R

(mW)

10

DS (ON)

R

Drain-source ON resistance

1

0.1 1 10

VGS = 4 V

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TPCS8211

60

Common source

Pulse test

50

40

(mW)

30

DS (ON)

20

R

VGS = 2.5 V VGS = 4 V

Drain-source ON resistance

10

0

-80 -40 0 40 120 160 80

Ambient temperature Ta (°C)

10000

Capacitance – V

1000

100

Capacitance C (pF)

Common source

Ta = 25°C

VGS = 0 V

f = 1 MHz

10

0.1 1 10

Drain-source voltage VDS (V)

1.2

1

(W)

D

0.8

0.6

0.4

0.2

Drain power dissipation P

0

Device mounted on a glass-epoxy board (a)

(1) Single-device operation (Note 3a)

(1)

(2) Single-device value at dual operation (Note 3b)

Device mounted on a glass-epoxy board (b)

(2)

(3)

(4)

(3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b)

50 100 200150

Ambient temperature Ta (°C)

DS (ON)

– Ta

R

ID = 1.5, 3, 6 A

– Ta

P

D

t = 10 s

VGS = 2 V

DS

C

iss

C

oss

C

rss

(Note 2a)

(Note 2b)

100

I

– VDS

10

5

10

3

(A)

5

DR

3

Drain reverse current I

1

0 0.2 0.4 0.6 0.8 1.0 1.2

Drain-source voltage VDS (V)

DR

1

0

VGS = -1 V

Common source

Ta = 25°C

Pulse test

– Ta

V

1.6

(V)

1.2

th

0.8

0.4

Gate threshold voltage V

0

-80 -40 0 40 80 120 160

Ambient temperature Ta (°C)

th

Common source VDS = 10 V ID = 200 mA Pulse test

Dynamic input/output characteristics

20

V

16

(V)

DS

Drain-source voltage V

DS

12

8

4

0

08 24 3216

VDD = 16 V

Total gate charge Qg (nC)

Common source

ID = 6 A

Ta = 25°C

Pulse test

VGS

10

8

6

4

2

0

(V)

GS

Gate-source voltage V

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TPCS8211

100

50

ID max (pulse) *

30

10

5

(A)

3

D

1

0.5

0.3

Drain current I

0.1

* Single pulse Ta = 25°C

0.05

0.03

Curves must be derated linearly with increase in temperature.

0.01

0.01 0.03 0.1 0.3 1 3 10 10030

1000

Device mounted on a glass-epoxy board (a) (Note 2a) ① Single-device operation (Note 3a)

500

② Single-device value at dual operation (Note 3b)

300

Device mounted on a glass-epoxy board (b) (Note 2b) ③ Single-device operation (Note 3a) ④ Single-device value at dual operation (Note 3b)

100

50

30

10

(°C/W)

5

th

r

3

1

0.5

Normalized transient thermal impedance

0.3

0.1

0.001 0.01 0.1 1 10 100 1000

Pulse width tw (S)

Safe operating area

Single-device value at dual

operation (Note 3b)

10 ms *

Drain-source voltage VDS (V)

1 ms *

V

max

DSS

r

th

- tw

(4)

(3)

(2)

(1)

Single pulse

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TPCS8211

A

RESTRICTIONS ON PRODUCT USE

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

000707EA

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