Datasheet TPCS8205 Datasheet (TOSHIBA)

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)

TPCS8205

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PCs

l Small footprint due to small and thin package l Low drain-source ON resistance: R

DS (ON)

l High forward transfer admittance: |Yfs| = 10 S (typ.) l Low leakage current: I l Enhancement-mode: V

= 10 µA (max) (VDS = 20 V)

DSS

= 0.5~1.2 V (VDS = 10 V, ID = 200 µA)

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage V

Drain-gate voltage (RGS = 20kΩ) V

Gate-source voltage V

Drain curren

Drain power dissipation (t = 10s) (Note 2a)

Drain power dissipation (t = 10s) (Note 2b)

Single pulse avalanche energy (Note 4)

Avalanche current I

Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5)

Channel temperature Tch 150 °C

Storage temperature range T

(Ta = 25°C)

D C (Note 1) I

Pulse (Note 1) I

Single-device operation (Note 3a)

Single-device value at dual operation

Single-device operation (Note 3a)

Single-device value at dual operation

(Note 3b)

= 30 mΩ (typ.)

DSS

DGR

GSS

1.1

D (1)

0.5

D(2)

0.6

D (1)

0.35

D (2)

stg

20 V

±12 V

32.5 mJ

5 A

0.05 mJ

−55~150 °C

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-3R1E

Weight: 0.035 g (typ.)

Circuit Configuration

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)

and (Note 5), please refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

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Thermal Characteristics

Characteristics Symbol Max Unit

TPCS8205

Thermal resistance, channel to ambient (t = 10s) (Note 2a)

Thermal resistance, channel to ambient (t = 10s) (Note 2b)

Single-device operation

(Note 3a)

Single-device value at dual operation

(Note 3b)

Single-device operation

(Note 3a)

Single-device value at dual operation

(Note 3b)

th (ch-a) (1)

th (ch-a) (2)

th (ch-a) (1)

th (ch-a) (2)

114

250

°C/W

208

357

Marking

(Note 6)

Type

S8205

※

Lot No.

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2:

a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8 (unit: mm)

FR-4

25.4 × 25.4 × 0.8 (unit: mm)

Note 3:

a) The power dissipation and thermal resistance values are shown for a single device

(During single-device operation, power is only applied to one device.)

b) The power dissipation and thermal resistance values are shown for a single device

(During dual operation, power is evenly applied to both devices.)

Note 4: V

= 16 V, Tch = 25°C (Initiaal), L = 1.0 mH, RG = 25 Ω, IAR = 5.0 A

Note 5: Repetitive rating: pulse width limited by max channel temperature

Note 6: ○ on lower right of the marking indicates Pin 1.

※ Weekly code: (Three digits)

Week of manufacture (01 for first week of year, continues up to 52 or 53)

Year of manufacture (One low-order digits of calendar year)

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TPCS8205

Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cut-OFF current I

Drain-source breakdown voltage

Gate threshold voltage Vth VDS = 10 V, ID = 200 µA 0.5 ¾ 1.2 V

Drain-source ON resistance

Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 5 10 ¾ S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr ¾ 7 ¾

Turn-ON time ton ¾ 13 ¾

Switching time

Fall time tf ¾ 13 ¾

(Ta = 25°C)

(BR) DSSID

(BR) DSXID

DS (ON

DS (ON)

VGS = ±10 V, VDS = 0 V ¾ ¾ ±10 µA

GSS

VDS = 20 V, VGS = 0 V ¾ ¾ 10 µA

DSS

= 10 mA, VGS = 0 V 20 ¾ ¾

= 10 mA, VGS = −12 V 8 ¾ ¾

VGS = 2.0 V, ID = 3.5 A ¾ 60 90

)

VGS = 2.5 V, ID = 3.5 A ¾ 40 60

VGS = 4 V, ID = 4 A ¾ 30 45

¾ 760 ¾ pF

iss

= 10 V, VGS = 0 V, f = 1 MHz

¾ 110 ¾ pF

rss

oss

¾ 130 ¾ pF

mΩ

Turn-OFF time t

Total gate charge (gate-source plus gate-drain)

Gate-source charge Qgs ¾ 8 ¾ nC

Gate-drain (“miller”) charge Qgd

off

¾ 11 ¾ nC

≈ 16 V, VGS = 5 V, ID = 5 A

¾ 49 ¾

¾ 3 ¾ nC

Source-Drain Ratings and Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse current

Forward voltage (diode) V

Pulse (Note 1) I

DRP

DSF

IDR = 5 A, VGS = 0 V — — −1.2 V

(Ta = 25°C)

— — — 20 A

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TPCS8205

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TPCS8205

DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a)

(W)

DRAIN POWER DISSIPATION P

(NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION

1.6

(NOTE 3b)

DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a)

1.2

(1)

(4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b)

0.8

(3)

(2)

0.4 (4)

40 80 200160 120

– Ta

AMBIENT TEMPERATURE Ta (°C)

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TPCS8205

100

(A)

SAFE OPERATING AREA

ID max (PULSE) *

SINGLE-DEVICE VALUE AT

DUAL OPERATION (NOTE 3b)

1 ms *

10 ms *

0.5

0.3

0.1

* SINGLE PULSE

DRAIN CURRENT I

0.05 Ta = 25°C

0.03 Curves must be derated linearly

with increase in temperature.

0.01

0.01 0.03 0.1 0.3 1 3 10 10030

DRAIN-SOURCE VOLTAGE VDS (V)

DSS

max

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TPCS8205

RESTRICTIONS ON PRODUCT USE

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

000707EA

2003-02-20