Datasheet TPCF8102 Datasheet (Toshiba) [ru]

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

TPCF8102

TPCF8102

Notebook PC Applications

Portable Equipment Applications

• Low drain-source ON resistance: R

DS (ON)

• High forward transfer admittance: |Y

• Low leakage current: I

= −10 μA (max) (VDS = −20 V)

DSS

• Enhancement mode: Vth = −0.5 to −1.2 V
(V

= −10 V, ID = −200 μA)

DS

Absolute Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage V

Drain-gate voltage (RGS = 20 kΩ) V

Gate-source voltage V

Drain current

Drain power dissipation (t = 5 s)
(Note 2a)

Drain power dissipation (t = 5 s)
(Note 2b)

Single pulse avalanche energy (Note 3) EAS

Avalanche current IAR

Repetitive avalanche energy (Note 4) EAR

Channel temperature Tch

Storage temperature range T

DC (Note 1)

Pulsed (Note 1)

(Ta = 25°C)

= 24 mΩ (typ.)

| = 14 S (typ.)

fs

DSS

DGR

GSS

I

−6

D

I

−24

DP

P

D

P

D

stg

−20

−20

±8

2.5 W

0.7 W

5.9 mJ

−3 A

0.25

150

−55~150

V

V

V

A

mJ

°C

°C

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-3U1A

Weight: 0.011 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics Circuit Configuration

8 6

Characteristics Symbol Max Unit

Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)

Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)

R

R

50.0 °C/W

th (ch-a)

178.6 °C/W

th (ch-a)

Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

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TPCF8102

<

∼

∼

Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cut-off current I

Drain-source breakdown voltage

Gate threshold voltage Vth VDS = −10 V, ID = −200 μA −0.5 ⎯ −1.2 V

Drain-source ON resistance

Forward transfer admittance |Yfs| VDS = −10 V, ID = −3.0 A 7 14 ⎯ S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr ⎯ 7 ⎯

Turn-on time ton ⎯ 13 ⎯

Switching time

Fall time tf ⎯ 21 ⎯

Turn-off time t

Total gate charge
(gate-source plus gate-drain)

Gate-source charge Qgs ⎯ 14 ⎯

Gate-drain (“miller”) charge Qgd

(Ta = 25°C)

VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±10 μA

GSS

VDS = −20 V, VGS = 0 V ⎯ ⎯ −10 μA

DSS

V

(BR) DSSID

V

(BR) DSXID

R

DS (ON)

R

DS (ON)

R

DS (ON)

⎯ 1550 ⎯

iss

⎯ 215 ⎯

rss

oss

off

⎯ 19 ⎯

Q

g

= −10 mA, VGS = 0 V −20 ⎯ ⎯

= −10 mA, VGS = 8 V −12 ⎯ ⎯

VGS = −1.8 V, ID = −1.5 A ⎯ 67 90

VGS = −2.5 V, ID = −3.0 A ⎯ 36 41

VGS = −4.5 V, ID = −3.0 A ⎯ 24 30

V

= −10 V, VGS = 0 V, f = 1 MHz

DS

0 V

V

GS

−5 V

Duty

1%, tw = 10 μs

−16 V, VGS = −5 V,

V

DD

= −6.0 A

I

D

4.7 Ω

ID = −3.0 A

V

DD

V

= 3.33 Ω

L

R

−10 V

OUT

⎯ 265 ⎯

⎯ 68 ⎯

⎯ 5 ⎯

Source-Drain Ratings and Characteristics

(Ta = 25°C)

V

mΩ

pF

ns

nC

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse
current

Forward voltage (diode) V

Pulse (Note 1) I

DRP

DSF

IDR = −6.0 A, VGS = 0 V ⎯ ⎯ 1.2 V

⎯ ⎯ ⎯ −24 A

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TPCF8102

A

Marking

(or abbreviation code)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

(Note 5)

Part No.

Lot code (month)

F3B

Pin #1 Lot code

(year)

Lot No.

Product-specific code

line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

FR-4

25.4 × 25.4 × 0.8

Unit: (mm)

FR-4

25.4 × 25.4 × 0.8

Unit: (mm)

(a)

Note 3: V

Note 4: Repetitive rating: pulse width limited by maximum channel temperature

Note 5: A dot on the lower left of the marking indicates Pin 1.

= −16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −3.0 A

DD

(b)

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TPCF8102

−4

−3

I

D

– VDS

−1.8 −1.9 −2.5

−2

−1.7

−1.6

−1.5

VGS = −1.4 V

Common source
Ta = 25°C Pulse test

−10

−8

(A)

D

−6

−4

Drain current I

−2

0

0 −1 −2 −3 −4 −5

−2−2.5

−3

−4

−5

Drain-source voltage VDS (V)

(A)

D

Drain current I

−5

−4

−3

−2

−1

−5

−4.5

0

0 −0.2 −0.4 −0.6 −0.8 −1.0

Drain-source voltage VDS (V)

I

– VDS

D

Common source
Ta = 25°C Pulse test

−1.9

−1.8

−1.7

−1.6

−1.5

VGS = −1.4 V

−10

(A)

D

Drain current I

Common source

VDS = −10 V

Pulse test

−8

−6

−4

−2

0

0 −0.5 −1.0 −1.5 −2.0 −2.5

Ta = 100°C

Gate-source voltage VGS (V)

I

– VGS

D

Ta = 25°C

−0.5

−0.4

(V)

DS

−0.3

−0.2

Ta = −55°C

−0.1

Drain-source voltage V

0

0 −2 −4 −6 −10

Gate-source voltage VGS (V)

V

DS

– VGS

Common source

Ta = 25°C

Pulse test

ID = −6 A

−3 A

−1.5 A

−8

100

| (S)

fs

Common source

VDS = −10 V

Pulse test

Ta = 25°C

10

1

| – ID

|Y

fs

Ta = −55°C

Ta = 100°C

1000

R

Common source

Ta = 25°C

Pulse test

100

(mΩ)

DS (ON)

R

10

Drain-source on resistance

DS (ON)

−1.8 V

VGS = −4.5 V

– ID

−2.5 V

Forward transfer admittance |Y

0.1

−0.1 −1 −10 −100

Drain current ID (A)

1

−0.1 −1 −10 −100

Drain current ID (A)

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TPCF8102

160

Common source

Pulse test

120

R

DS (ON)

– Ta

−100

(A)

DR

Common source

Ta = 25°C

Pulse test

I

DR

– VDS

(mΩ)

80

VGS = −1.8 V

40

−2.5 V

−4.5 V

0

−80 −40 0 40 80 120 160

Ambient temperature Ta (°C)

Drain-source on resistance

DS (ON)

R

−2.5 A

ID = −1.5 A

ID = −1.5, −2.5 A

ID = −1.5, −2.5, −6 A

−6 A

−2.0 V

−10

−4 V

−1.8 V

−1 V

Drain reverse current I

VGS = 0 V

−1
0

0.4 0.8 1.2 1.6 2

Drain-source voltage VDS (V)

10000

VGS = 0 V

f = 1 MHz

Ta = 25°C

Capacitance – V

1000

DS

C

iss

C

oss

2.0
Common source

VDS = −10 V
ID = −200 μA
Pulse test

(V)

1.5

th

1.0

V

– Ta

th

C

100

Capacitance C (pF)

10

0.1 1.0 10 100

Drain-source voltage VDS (V)

rss

0.5

Gate threshold voltage V

0

−80 −40 0 40 80 120 160

Ambient temperature Ta (°C)

3

(1) t = 5 s

2.5

(W)

D

2

1.5

(1) DC

1

(2) t = 5 s

0.5

Drain power dissipation P

(2) DC

0

0 40 80 120 160

Ambient temperature Ta (°C)

– Ta

P

D

(1) Device mounted on a

glass-epoxy board (a) (Note 2a)

(2) Device mounted on a

glass-epoxy board (b) (Note 2b)

Dynamic input/output characteristics

−20

V

−16

(V)

DS

Drain-source voltage V

DS

−12

−8

−4

0

0 8 16 24 32 40

Total gate charge Qg (nC)

−4 V

−8 V

Common source

ID = −6 A

Ta = 25°C

Pulse test

VGS

VDD = −16 V

−20

−16

−12

−8

−4

0

(V)

GS

Gate-source voltage V

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TPCF8102

1000

Device mounted on a glass-epoxy board (b) (Note 2b)

r

th

– tw

(°C/W)

th

100

10

Device mounted on a glass-epoxy board (a) (Note 2a)

1

Transient thermal impedance r

−100

ID max (pulsed)*

−10

(A)

D

0.1
1 m 10 m 100 m 1 10 100

Safe operating area

1 ms*

10 ms*

Pulse width tw (s)

1000

−1
*: Single pulse

Drain current I

Ta = 25°C

Curves must be derated

linearly with increase in

temperature

−0.1

−0.1 −1 −10 −100

Drain-source voltage VDS (V)

V

max

DSS

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TPCF8102

RESTRICTIONS ON PRODUCT USE

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

20070701-EN

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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