Datasheet TPCA8023-H Datasheet

TPCA8023-H

A

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)

TPCA8023-H

High-Efficiency DC/DC Converter Applications

Notebook PC Applications

Portable Equipment Applications

• Small footprint due to a small and thin package

• High-speed switching

• Small gate charge: Q

• Low drain-source ON-resistance: R

• High forward transfer admittance: |Y

• Low leakage current: I

• Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings

Characteristic Symbol Rating Unit

Drain-source voltage

Drain-gate voltage (RGS = 20 kΩ)

Gate-source voltage

Drain current

Drain power dissipation (Tc=25℃) PD 30 W

Drain power dissipation (t = 10 s)

(Note 2a)

Drain power dissipation (t = 10 s)

(Note 2b)

Single-pulse avalanche energy

Avalanche current IAR 21 A

Repetitive avalanche energy

(Tc=25℃) (Note 4)

Channel temperature

Storage temperature range

= 5.0 nC (typ.)

SW

DS (ON)

= 10 μA (max) (VDS = 30 V)

DSS

(Ta = 25°C)

DC (Note 1) ID 21

Pulsed (Note 1) I

(Note 3)

= 9.8 mΩ (typ.)

| = 47 S (typ.)

fs

V

30 V

DSS

V

30 V

DGR

V

±20 V

GSS

63

DP

P

2.8 W

D

P

1.6 W

D

57 mJ

E

AS

E

2.9 mJ

AR

T

150 °C

ch

T

−55 to 150 °C

stg

A

Unit: mm

0.5±0.1
8

6.0±0.3

5.0±0.2

1

0.95±0.05

S

1,2,3:SOURCE 4:GATE
5,6,7,8:DRAIN

5.0±0.2

0.05 S

1

0.6±0.1

4.25±0.2

0.05 M

5

0.15±0.05

4

0.595

A

0.166±0.05

1.1±0.2

4

3.5±0.2

58

0.8±0.1

0.4±0.1

1.27

JEDEC ―

JEITA ―

TOSHIBA 2-5Q1A

Weight: 0.069 g (typ.)

Circuit Configuration

8 6

1 2 3

7 5

4

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

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Thermal Characteristics

Characteristic Symbol Max Unit

TPCA8023-H

Thermal resistance, channel to case

(Tc=25℃)

Thermal resistance, channel to ambient

(t = 10 s) (Note 2a)

Thermal resistance, channel to ambient

(t = 10 s) (Note 2b)

R

R

R

4.17 °C/W

th (ch-c)

44.6 °C/W

th (ch-a)

78.1 °C/W

th (ch-a)

Marking

(Note 5)

8023-H

※

Type TPCA

Lot No.

Note 1: The channel temperature should not exceed 150°C during use

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(a)

Note 3: V

= 24 V, Tch = 25°C (initial), L = 100 μH, RG = 25 Ω, IAR = 21 A

DD

Note 4: Repetitive rating: pulse width limited by max. channel temperature

Note 5:

* Weekly code: (Three digits)

Week of manufacture
(01 for first week of year, continuing up to 52 or 53)

Year of manufacture
(The last digit of the calendar year)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(b)

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2007-12-26

TPCA8023-H

<

∼

∼

∼

∼

Electrical Characteristics

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cutoff current I

Drain-source breakdown voltage

Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.5 ⎯ 2.5 V

Drain-source ON-resistance R

Forward transfer admittance |Yfs| VDS = 10 V, ID = 11 A 23.5 47 ⎯ S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Gate resistance Rg VDS = 10 V, VGS = 0 V, f = 5 MHz ⎯ 1.0 1.5 Ω

Rise time tr ⎯ 2.8 ⎯

Turn-on time ton ⎯ 9.3 ⎯

Switching time

Fall time tf ⎯ 3.4 ⎯

Turn-off time t

Total gate charge
(gate-source plus gate-drain)

Gate-source charge 1 Q

Gate-drain (“Miller”) charge Qgd ⎯ 3.0 ⎯

Gate switch charge QSW

(Ta = 25°C)

VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA

GSS

VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA

DSS

V

(BR) DSSID

V

(BR) DSXID

DS (ON)

⎯ 1433 2150

iss

⎯ 83 125

rss

oss

off

Q

g

gs1

= 10 mA, VGS = 0 V 30 ⎯ ⎯

= 10 mA, VGS = −20 V 15 ⎯ ⎯

VGS = 4.5 V, ID = 11 A ⎯ 12.1 15.7

= 10 V, ID = 11 A ⎯ 9.8 12.9

V

GS

V

= 10 V, VGS = 0 V, f = 1 MHz

DS

4.7 Ω

ID = 11 A

V

DD

V

= 1.36Ω

L

R

15 V

OUT

10 V

V

GS

0 V

1%, tw = 10 μs

Duty

V

24 V, VGS = 10 V, ID = 21 A ⎯ 21 ⎯

DD

24 V, VGS = 5 V, ID = 21 A ⎯ 11 ⎯

V

DD

⎯ 4.7 ⎯

V

24 V, VGS = 10 V, ID = 21 A

DD

⎯ 303 ⎯

⎯ 21 ⎯

⎯ 5.0 ⎯

Source-Drain Ratings and Characteristics

(Ta = 25°C)

V

mΩ

pF

ns

nC

Characteristic Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) I

Forward voltage (diode) V

⎯ ⎯ ⎯ 63 A

DRP

IDR = 21 A, VGS = 0 V ⎯ ⎯ −1.2 V

DSF

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2007-12-26

TPCA8023-H

=

(A)

D

Drain current I

(A)

D

Drain current I

6 5

8

10

8

6

4

2

0

4

10

4.5

0 0.2 0.4 0.6 0.8

Drain-source voltage VDS (V)

I

– VDS

D

3.2

Common source
Ta = 25°C
Pulse test

VGS = 2.7V

I

– VGS

40

Common source
VDS = 10 V
Pulse test

32

24

16

8

0

0 1 2 3

D

100

Ta = −55°C

25

4 5

Gate-source voltage VGS (V)

3.1

2.9

3.0

6

5

8

20

10

4

16

(A)

D

12

4.5

8

Drain current I

4

0

1

0 0.8 1.6

I

– VDS

D

Common source

3.4

Ta = 25°C
Pulse test

3.3

3.2

3.1

VGS = 2.9V

1.2 0.4

2

Drain-source voltage VDS (V)

V

– V

DS

0.4

(V)

0.3

DS

0.2

0.1

Drain-source voltage V

0

0 2 4 6 8

GS

Common source
Ta = 25℃
Pulse test

ID = 21 A

11

5

10

Gate-source voltage VGS (V)

1000

Common source
V

= 10 V

| (S)

fs

Forward transfer admittance |Y

DS

Pulse test

100

10

1

0.1

0.1 1

⎪Y

⎪ – ID

fs

Ta = −55°C

25

100

10

Drain current ID (A)

100

100

(mΩ)

10

DS (ON)

R

V

Drain-source ON-resistance

1

0.1 1 10

Drain current ID (A)

R

DS (ON)

4.5

GS

10 V

– ID

Common source
Ta = 25 ℃
Pulse test

100

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TPCA8023-H

25

Common source
Pulse test

20

(mΩ)

15

DS (ON)

R

10

Drain-source ON-resistance

5

10000

1000

100

Common source

Capacitance C (pF)

VGS = 0 V
f = 1 MHz
Ta = 25°C

10

0.1

R

VGS = 4.5 V

VGS = 10 V

DS (ON)

– Ta

ID = 5A,11A,21A

ID = 5A,11A,21A

Ambient temperature Ta (°C)

Capacitance – V

1 10

DS

Drain-source voltage VDS (V)

I

– VDS

100

DR

(A)

DR

10

Drain reverse current I

160 −40 0 40 80 120 −80

10

Common source
Ta = 25°C
Pulse test

0 1−0.2

4.5

3

1

VGS = 0 V

−0.6 −0.8 −0.4 −1.2

−1

Drain-source voltage VDS (V)

2.5

2

C

iss

C

oss

C

rss

100

(V)

th

1.5

1

Common source

0.5
VDS = 10 V

ID = 1 mA

Gate threshold voltage V

Pulse test

0

−80 −40 0 40 80 120 160

V

– Ta

th

Ambient temperature Ta (°C)

(V)

Drain-source voltage V

40

DS

50

Common source

ID = 21 A
Ta = 25°C

Pulse test

30

VDS

20

10

0

0

Dynamic input/output

characteristics

VDD = 6 V

12 V

24 V

5

10

15

20

Total gate charge Qg (nC)

25

30

20

16

12

8

4

0

(V)

GS

Gate-source voltage V

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TPCA8023-H

r

– tw

th

1000

Transient thermal impedance r

th

(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc=25℃

100

10

(°C/W)

1

0.1

0.01

0.0001

0.001

0.01 0.1 1 10 100 1000

(2)

(1)

(3)

Single - pulse

Pulse width tw (s)

P

– Ta

3

(1)

2.5

(W)

D

2

(2)

1.5

1

0.5

Drain power dissipation P

0

0 40 80 120

Ambient temperature Ta (°C)

D

(1)Device mounted on a glass-epox y

board(a) (Note 2a)

(2)Device mounted on a glass-epox y

board(b) (Note 2b)

t=10s

160

50

40

(W)

D

30

20

10

Drain power dissipation P

0

0 40 80 120 160

Case temperature TC (°C)

P

D

– Tc

1000

Safe operating area

(A)

D

Drain current I

100

ID max (Pulse) *

10

1

* Single – pulse Ta = 25℃

Curves must be derated
linearly with increase in
temperature.

0.1

0.1

Drain-source voltage VDS (V)

10ms *

1

t =1ms *

V

DSS

10

max

100

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TPCA8023-H

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively “Product”) without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
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equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
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BSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE

• A
FO

R PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.

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