Datasheet TPC8210 Datasheet (TOSHIBA)

查询TPC8210供应商

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III)

TPC8210

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PC Applications

l Low drain−source ON resistance: R

DS (ON)

l High forward transfer admittance: |Y l Low leakage current: I

= 10 µA (max) (VDS = 30 V)

DSS

l Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage V

Drain-gate voltage (RGS = 20 kΩ) V

Gate-source voltage V

Drain current

Drain power dissipation (t = 10 s) (Note 2a)

Drain power dissipation (t = 10 s) (Note 2b)

Single pulse avalanche energy (Note 4)

Avalanche current I

Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)

Channel temperature Tch 150 °C

Storage temperature range T

(Ta = 25°C)

D C (Note 1) I

Pulse (Note 1) I

Single-device operation (Note 3a)

Single-device value at dual operation

Single-device operation (Note 3a)

Single-device value at dual operation

(Note 3b)

Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please

refer to the next page.

= 11 mΩ (typ.)

| = 13 S (typ.)

fs

DSS

DGR

GSS

D

DP

1.5

P

D (1)

1.1

P

D(2)

0.75

P

D (1)

0.45

P

D (2)

E

AS

AR

E

AR

stg

30 V

±20 V

8

32

83.2 mJ

8 A

0.1 mJ

−55 to 150 °C

A

W

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-6J1E

Weight: 0.08 g (typ.)

Circuit Configuration

8 7 6 5

1 2 3 4

This transistor is an electrostatic sensitive device. Please handle with caution.

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Thermal Characteristics

Characteristics Symbol Max Unit

TPC8210

Thermal resistance, channel to ambient (t = 10 s) (Note 2a)

Thermal resistance, channel to ambient (t = 10 s) (Note 2b)

Single-device operation

(Note 3a)

Single-device value at dual operation

(Note 3b)

Single-device operation

(Note 3a)

Single-device value at dual operation

(Note 3b)

R

th (ch-a) (1)

R

th (ch-a) (2)

R

th (ch-a) (1)

R

th (ch-a) (2)

83.3

114

167

278

Marking (Note 6)

Type TPC8210

※

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2:

Lot No.

°C/W

FR-4

25.4 ´ 25.4 ´ 0.8 (unit: mm)

(a)

FR-4

25.4 ´ 25.4 ´ 0.8 (unit: mm)

(b)

a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)

Note 3:

a) The power dissipation and thermal resistance values are shown for a single device.

(During single-device operation, power is only applied to one device.)

b) The power dissipation and thermal resistance values are shown for a single device.

(During dual operation, power is evenly applied to both devices.)

Note 4: V

= 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 8 A

DD

Note 5: Repetitive rating: pulse width limited by maximum channel temperature

Note 6: · on lower left of the marking indicates Pin 1.

※ Weekly code: (Three digits)

Week of manufacture (01 for first week of year, continues up to 52 or 53)

Year of manufacture (One low-order digits of calendar year)

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TPC8210

<

V

Electrical Characteristics

(Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cut−OFF current I

V

Drain−source breakdown voltage

(BR) DSS

V

(BR) DSS

Gate threshold voltage V

R

Drain−source ON resistance

DS (ON)

R

DS (ON)

GSS

DSS

th

VGS = ±16 V, VDS = 0 V — ― ±10 µA

VDS = 30 V, VGS = 0 V ― ― 10 µA

ID = 10 mA, VGS = 0 V 30 ― ―

ID = 10 mA, VGS = -20 V 15 ¾ ¾

VDS = 10 V, ID = 1 mA 1.3 ― 2.5 V

VGS = 4.5 V, ID = 4 A ¾ 13 20

VGS = 10 V, ID = 4 A ― 11 15

Forward transfer admittance |Yfs| VDS = 10 V, ID = 4 A 6.5 13 ― S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr ― 26 ―

Turn−ON time ton ― 39 ―

Switching time

Fall time tf ― 32 ―

Turn−OFF time t

― 3530 ―

iss

= 10 V, VGS = 0 V, f = 1 MHz

V

― 495 ―

rss

oss

DS

― 580 ―

10

V

GS

0 V

off

Duty

1%, tw = 10 ms

ID = 4 A

V

OUT

= 3.7 W

DD

~

-

L

R

15 V

4.7 W V

― 115 ―

V

mΩ

pF

ns

Total gate charge (Gate−source plus gate−drain)

Gate−source charge Qgs ― 6 ―

Gate−drain (“miller”) charge Qgd

Q

― 75 ―

g

≈ 24 V, VGS = 10 V, ID = 8 A

V

DD

― 19 ―

Source-Drain Ratings and Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse current

Forward voltage (diode) V

Pulse (Note 1) I

DRP

DSF

IDR = 8 A, VGS = 0 V — — −1.2 V

(Ta = 25°C)

— — — 32 A

nC

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TPC8210

10

4 6 8

– VDS

I

D

3

Common source Ta = 25°C Pulse test

2.9

2.8

2.7

2.6

2.5

2.4

VGS = 2.3 V

20

16

(A)

D

12

8

Drain current I

4

0

0 1 2 3 4 5

Drain-source voltage VDS (V)

10

8

10

8

(A)

D

6

4

Drain current I

2

0

00.2

– VDS

I

D

6

Drain-source voltage VDS (V)

2.8

2.9

3

0.4 0.6 0.8 1.0

Common source Ta = 25°C Pulse test

2.7

2.6

2.5

2.4

2.3

VGS = 2.2 V

20

Common source VDS = 10 V Pulse test

16

(A)

D

12

8

Drain current I

4

– VGS

I

D

25

100

Ta = -55°C

V

– VGS

1

0.8

(V)

DS

0.6

0.4

0.2

Drain-source voltage V

DS

Common source Ta = 25°C Pulse test

4

ID = 2A 8

0

1 1.5 4

0.5

Gate-source voltage VGS (V)

23

2.5 2.5

0

048 20

Gate-source voltage VGS (V)

12 16

100

ï (S)

fs

10

25°C

1

Forward transfer admittance ïY

0.1

0.1 1 10

Drain current ID (A)

|Y

| – ID

fs

Tc = 100°C -55°C

Common source VDS = 10 V Pulse test

100

Drain-source ON resistance

DS (ON)

VGS = 10 V

10

– ID

Common source Ta = 25°C Pulse test

100

R

30

VGE = 4.5 V

(mW)

10

DS (ON)

R

3

1

1 3 30 100

Drain current ID (A)

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TPC8210

25

(W)

20

DS (ON)

15

Drain-source ON resistance R

VGS = 4.5 V

10

10 V

5

0

-80 -40 0 40 80 160120

Ambient temperature Ta (°C)

R

DS (ON)

– Ta

ID = 8, 4, 2 A

Common source

Pulse test

(A)

DR

Drain reverse current I

100

10

1

0 -0.4 -0.6 -0.8 -1.2-0.2

– VDS

I

DR

5

3

1

VGS = 0 V

Common source Ta = 25°C Pulse test

Drain-source voltage VDS (V)

-1

10000

1000

Capacitance – V

DS

C

iss

3

2.5

(V)

th

2

V

– Ta

th

C

100

oss

C

rss

Capacitance C (pF)

Common source VGS = 10 V ID = 1 mA Pulse test

10

0.1 1 10

Drain-source voltage VDS (V)

100

1.5

1

Common source

VDS = 10 V

0.5

Gate threshold voltage V

f = 1 mA

Pulse test

0

-80 -40 0 40 80 120 140

Ambient temperature Ta (°C)

2

(W)

(1)

1.5

D

(2)

1.0

(3)

(4)

0.5

– Ta

P

D

(1) Device mounted on a

glass-epoxy board (a) (Note 2a)

(2) Device mounted on a

glass-epoxy board (b) (Note 2b)

t = 10 s

Drain power dissipation P

Dynamic input/output characteristics

30

25

(V)

DS

Drain-source voltage V

VDD = 24 V

20

V

DS

15

12

10

6

5

12

Common source

Ta = 25°C

ID = 8 A Pulse test

6

VDD = 24 V

30

25

20

15

10

5

(V)

GS

Gate-source voltage V

0

50 100 150 200

Ambient temperature Ta (°C)

0

0 20 40 60 80 100

Total gate charge Qg (nC)

0

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TPC8210

1000

Single pulse

100

r

th

- tw

(4)

(3)

(2) (1)

10

(°C/W)

th

r

1

Normalized transient thermal impedance

100

(A)

D

ID max (pluse) *

10

1

0.1

0.001 0.01 0.1 1 10 100 1000

Pulse width tw (S)

Safe operating area

1 ms*

10 ms*

Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s

Drain current I

0.1

* Single pulse

Ta = 25°C Curves must be derated linearly with increase in

temperature.

0.01

0.01 0.1 1 10 100

Drain-source voltage VDS (V)

V

DSS

max

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TPC8210

A

RESTRICTIONS ON PRODUCT USE

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

000707EA

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